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Light-emitting electrochemical cells (LECs) based on cyanine molecules were prepared. High photoluminescence quantum yields were obtained for host-guest films using two cyanine dyes, reaching 27%. Sandwiching these films in between two electrodes allows for very stable near-infrared emission with a maximum radiant flux of 1.7 W m-2 at an external quantum efficiency of 0.44%. [ABSTRACT FROM AUTHOR]

In conventional light-emitting electrochemical cells (LECs), an off-centered p–n junction is one of the major drawbacks, as it leads to exciton quenching at one of the charge-injecting electrodes and results in performance instability. To combat this problem, we have developed a new device configuration, the double-gate light-emitting electrochemical transistor (DG-LECT), in which the location of the light-emitting p–n junction can be precisely defined via the position of the two gate terminals. Based on a planar LEC structure, two gate electrodes made from an electrochemically active conducting polymer are employed to predefine the p- and n-doped area of the light-emitting polymer. Thus, a p–n junction is formed in between the p-doped and n-doped regions. We demonstrate a homogeneous and centered p–n junction as well as other predefined junction patterns in these DG-LECT devices. Additionally, we report an electrical model that explains the operation of the DG-LECTs. The DG-LECT device provides a new tool to study the fundamental physics of LECs, as it dissects the key working process of LEC into decoupled p-doping, n-doping, and electroluminescence. [ABSTRACT FROM AUTHOR]

Two types of light-emitting electrochemical cells (LECs) are commonly distinguished, the polymer-based LEC (p-LEC) and the ionic transition metal complex-based LEC (iTMC-LEC). Apart from marked differences in the active layer constituents, these LEC types typically show operational time scales that can differ by many orders of magnitude at room temperature. Here, we demonstrate that despite these differences p-LECs and iTMC-LECs show current, light output, and efficacy transients that follow a universal shape. Moreover, we conclude that the turn-on time of both LEC types is dominated by the ion conductivity because the turn-on time exhibits the same activation energy as the ion conductivity in the off-state. These results demonstrate that both types of LECs are really two extremes of one class of electroluminescent devices. They also implicate that no fundamental difference exists between charge transport in small molecular weight or polymeric mixed ionic and electronic conductive materials. Additionally, it follows that the ionic conductivity is responsible for the dynamic properties of devices and systems using them. This likely extends to mixed ionic and electronic conductive materials used in organic solar cells and in a variety of biological systems. [ABSTRACT FROM AUTHOR]

We present a solution-processed trilayer light-emitting device architecture, comprising two hydrophobic and mobile-ion-containing “transport layers” sandwiching a hydrophilic and ion-free “intermediate layer”, which allows for lowered self-absorption, minimized electrode quenching, and tunable light emission. Our results reveal that the transport layers can be doped in situ when a voltage is applied, that the intermediate layer as desired can contribute significantly to the light emission, and that the key to a successful operation is the employment of a porous and (~5-10 nm) thin intermediate layer allowing for facile ion transport. We report that such a solution-processed device, comprising a thick trilayer material (~250 nm) and air-stable electrodes, emits blue light (λpeak = 450, 484 nm) with high efficiency (5.3 cd/A) at a low drive voltage of 5 V. [ABSTRACT FROM AUTHOR]

Low-voltage-operating organic electrochemical light-emitting cells (LECs) and transistors (OECTs) can be realized in robust device architectures, thus enabling easy manufacturing of light sources using printing tools. In an LEC, the p-n junction, located within the organic semiconductor channel, constitutes the active light-emitting element. It is established and fixated through electrochemical p- and n-doping, which are governed by charge injection from the anode and cathode, respectively. In an OECT, the electrochemical doping level along the organic semiconducting channel is controlled via the gate electrode. Here we report the merger of these two devices: the light-emitting electrochemical transistor, in which the location of the emitting p-n junction and the current level between the anode and cathode are modulated via a gate electrode. Light emission occurs at 4 V, and the emission zone can be repeatedly moved back and forth within an interelectrode gap of 500 μm by application of a 4 V gate bias. In transistor operation, the estimated on/off ratio ranges from 10 to 100 with a gate threshold voltage of -2.3 V and transconductance value between 1.4 and 3 μS. This device structure opens for new experiments tunable light sources and LECs with added electronic functionality. [ABSTRACT FROM AUTHOR]

Synthetic control of the mutual arrangement of the cyclometalated ligands (C^N) in Ir(III) dimers, [Ir(C^N)2Cl]2, and cationic bis-cyclometalated Ir(III) complexes, [Ir(C^N)2(L^L)]+ (L^L = neutral ligand), is described for the first time. Using 1-benzyl-4-(2,4-difluorophenyl)-1H-1,2,3-triazole (HdfptrBz) as a cyclometalating ligand, two different Ir(III) dimers, [Ir(dfptrBz)2Cl]2, are synthesized depending on the reaction conditions. At 80 °C, the dimer with an unusual mutual cis-C,C and cis-N,N configuration of the C^N ligands is isolated. In contrast, at higher temperature (140 °C), the geometrical isomer with the common cis-C,C and trans-N,N arrangement of the C^N ligand is obtained. In both cases, an asymmetric bridge, formed by a chloro ligand and two adjacent nitrogens of the triazole ring of one of the cyclometalated ligands, is observed. The dimers are cleaved in coordinating solvents to give the solvento complexes [Ir(dfptrBz)2Cl(S)] (S = DMSO or acetonitrile), which maintain the C^N arrangement of the parent dimers. Controlling the C^N ligand arrangement in the dimers allows for the preparation of the first example of geometrical isomers of a cationic bis-cyclometalated Ir(III) complex. Thus, N,N-trans-[Ir(dfptrBz)2(dmbpy)]+ (dmbpy = 4,4'-dimethyl-2,2'-bipyridine), with cis-C,C and trans-N,N arrangement of the C^N ligands, as well as N,N-cis-[Ir(dfptrBz)2(dmbpy)]+, with cis-C,C and cis-N,N C^N ligand orientation, are synthesized and characterized. Interestingly, both isomers show significantly different photophysical and electroluminescent properties, depending on the mutual arrangement of the C^N ligands. Furthermore, quantum chemical calculations give insight into the observed photophysical experimental data. [ABSTRACT FROM AUTHOR]

A vast array of semiconductor applications relies on the ability to dope the materials by the controlled introduction of impurities in order to achieve desired charge carrier concentration and conduction type. In this way, various functional metal/semiconductor or semiconductor/semiconductor junctions can be constructed for device applications. Conjugated polymers are organic semiconductors that can be electrochemically doped to form a dynamic p-n junction. The electronic structure and even the existence of such a polymer p-n junction had been the subject of intense scrutiny and debate. In this work, the formation of the world's largest frozen polymer p-n junction and its light-emission are visualized. With a pair of micromanipulated probes, we mapped the potential distribution of the p-n junction under bias across the entire interelectrode gap of over 10 mm. Site-selective current-voltage measurements reveal that the polymer junction is a graded p-n junction, with a much more conductive p region than n region. [ABSTRACT FROM AUTHOR]