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Thin polysilicon (poly-Si)-based passivating contacts can reduce parasitic absorption and the cost of n-TOPCon solar cells. Herein, n+-poly-Si layers with thicknesses of 30~100 nm were fabricated by low-pressure chemical vapor deposition (LPCVD) to create passivating contacts. We investigated the effect of n+-poly-Si layer thickness on the microstructure of the metallization contact formation, passivation, and electronic performance of n-TOPCon solar cells. The thickness of the poly-Si layer significantly affected the passivation of metallization-induced recombination under the metal contact (J0,metal) and the contact resistivity (ρc) of the cells. However, it had a minimal impact on the short-circuit current density (Jsc), which was primarily associated with corroded silver (Ag) at depths of the n+-poly-Si layer exceeding 40 nm. We introduced a thin n+-poly-Si layer with a thickness of 70 nm and a surface concentration of 5 × 1020 atoms/cm3. This layer can meet the requirements for low J0,metal and ρc values, leading to an increase in conversion efficiency of 25.65%. This optimized process of depositing a phosphorus-doped poly-Si layer can be commercially applied in photovoltaics to reduce processing times and lower costs. [ABSTRACT FROM AUTHOR]

At the initial rolling temperature of 400 °C, ZK60 magnesium alloy was hot rolled by three different rolling paths with different roll speed ratios (RSR) of 1:1.15, 1:1.2, and 1:1.5, respectively. The effects of different rolling processes on the microstructure and mechanical properties of the alloy were studied. The microstructure, plasticity, strength, hardness, and texture intensity of rolled samples were analyzed in this work. The results show that the microstructure uniformity of the alloy under multi-path asynchronous rolling (MAR) is significantly improved, which improves the mechanical properties of the material to a certain extent, and effectively weakens the texture intensity of the basal plane and reduces the anisotropy. The amount of randomly oriented grains of ZK60 magnesium alloy rolled by the C-1.5 (path C combined with the RSR of 1:1.5) process are significantly increased, which significantly weakens the basal texture and improves the ductility of the alloy, greatly enhancing the processing and formability of ZK60 magnesium alloy. [ABSTRACT FROM AUTHOR]

To improve the efficiency of polycrystalline silicon solar cells, process optimization is a key technology in the photovoltaic industry. Despite the efficiency of this technique to be reproducible, economic, and simple, it presents a major inconvenience to have a heavily doped region near the surface which induces a high minority carrier recombination. To limit this effect, an optimization of diffused phosphorous profiles is required. A "low-high-low" temperature step of the POCl3 diffusion process was developed to improve the efficiency of industrial-type polycrystalline silicon solar cells. The low surface concentration of phosphorus doping of 4.54 × 1020 atoms/cm3 and junction depth of 0.31 μm at a dopant concentration of N = 1017 atoms/cm3 were obtained. The open-circuit voltage and fill factor of solar cells increased up to 1 mV and 0.30%, compared with the online low-temperature diffusion process, respectively. The efficiency of solar cells and the power of PV cells were increased by 0.1% and 1 W, respectively. This POCl3 diffusion process effectively improved the overall efficiency of industrial-type polycrystalline silicon solar cells in this solar field. [ABSTRACT FROM AUTHOR]