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Titanium has been incorporated into the copper gallium disulfide (CuGaS 2 ) thin film by sulfurizing Cu-Ga-Ti precursor, which has been obtained through magnetron co-sputtering. The structure, chemical composition and optical property of the Ti-doped CuGaS 2 film were analyzed by Energy Dispersive X-ray Analysis (EDAX), field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), and ultraviolet–visible spectrophotometer. The results indicated that the Ti element has doped into CuGaS 2 thin film successfully. The crystal structure of Ti-doped CuGaS 2 thin films was single-phase chalcopyrite structure. By doping Ti element, the (112) diffraction peaks shift slightly. The optical band gap values of Ti-doped CuGaS 2 thin films were 2.30 eV and 1.92 eV with different Ti concentrations of 0.53 at% and 0.82 at%. [ABSTRACT FROM AUTHOR]

A novel intermediate band (IB) material of Zn incorporation in Ti-doped CuGaS 2 thin films has been successfully fabricated via a facile non vacuum method including ball milling, spin-coating and annealing. Experimental results have shown that the IB position of Ti-doped CuGaS 2 thin films can be adjusted by Zn incorporation. In this study, the optical band gap has a shortening of 0.19 eV when 0.6% Zn is added to the 1.5% Ti-doped CuGaS 2 . Due to the Zn addition, the grains grow larger, which is observable from the surface morphology of the thin films using scanning electron microscope (SEM). The energy dispersive X-ray analysis (EDAX) spectrum demonstrates that ball milling can effectively make Ti and Zn elements co-coped evenly into CuGaS 2 thin films. Moreover, the improved optical property of the Ti-doped CuGaS 2 thin films due to the Zn incorporation also sheds lights in developing new material that could be a potential light absorption layers candidate of high efficiency solar cells. [ABSTRACT FROM AUTHOR]