1. Preparation of type-II MoS2 film by chemical bath deposition onto Si coated with electrolessly Ni
- Author
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Wei, Ronghui, Yang, Haibin, Du, Kai, Fu, Wuyou, Li, Minghui, Yu, Qingjiang, Chang, Lianxia, Zeng, Yi, Sui, Yongming, Zhu, Hongyang, and Zou, Guangtian
- Subjects
- *
MOLYBDENUM compounds , *SEDIMENTATION & deposition , *X-ray diffraction , *RAMAN spectroscopy - Abstract
Abstract: MoS2 films were prepared by chemical bath deposition using Ni interlayer, which was deposited electrolessly on Si substrates. The combined techniques of X-ray diffraction, field emission scanning electron microscope (FESEM), Raman spectroscopy and optical reflective spectra were used for characterization of MoS2 films at different conditions. Results indicated that the type-II MoS2 films oriented with their c axis perpendicular to the plane of Si substrates were obtained at annealing temperature greater than 800°C. The effect of nickel on the orientation of 2H–MoS2 crystallites can be explained on the basis of binary Ni–S phase diagram. The thin films have a direct optical bandgap of 1.87eV as a result of optical reflective spectra. This article offers an easy way to prepare type-II MoS2 film of better crystallite. [Copyright &y& Elsevier]
- Published
- 2007
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