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Your search keyword '"Pierreux, D."' showing total 7 results
Start Over Author "Pierreux, D." Journal microelectronic engineering
7 results on '"Pierreux, D."'

1. High- k dielectrics for future generation memory devices (Invited Paper)

Author

Kittl, J.A., Opsomer, K., Popovici, M., Menou, N., Kaczer, B., Wang, X.P., Adelmann, C., Pawlak, M.A., Tomida, K., Rothschild, A., Govoreanu, B., Degraeve, R., Schaekers, M., Zahid, M., Delabie, A., Meersschaut, J., Polspoel, W., Clima, S., Pourtois, G., Knaepen, W., Detavernier, C., Afanas’ev, V.V., Blomberg, T., Pierreux, D., Swerts, J., Fischer, P., Maes, J.W., Manger, D., Vandervorst, W., Conard, T., Franquet, A., Favia, P., Bender, H., Brijs, B., Van Elshocht, S., Jurczak, M., Van Houdt, J., and Wouters, D.J.

Published
2009
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6. Electron spin resonance study of the effect of applied stress during thermal oxidation of (1 1 1)Si on inherent Pb interface defects

Author

Pierreux, D., Stesmans, A., Jaccodine, R.J., Lin, M.-T., and Delph, T.J.

Subjects
*ELECTRONS, *RESONANCE, *OXIDATION, *ELECTRIC action of points
Abstract

An electron spin resonance study has been carried out on the effect of in situ applied in-plane stress to (1 1 1)Si substrates during oxidation on the formation of inherent Pb (Si3&z.tbnd6;Si⋅; Si dangling bond) interface defects in (1 1 1)Si/SiO2. Analysis for various, both compressive and tensile, stress levels reveals the properties of these electrically active point defects to be significantly affected, in particular their incorporated inherent density and signal shape. Interestingly, the inherent Pb density is reduced by applied tensile stress, with an opposite result for compressive. The data support the commonly accepted relationship between inherent incorporation of the Pb defects and Si/SiO2 interface mismatch. [Copyright &y& Elsevier]

Published
2004
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7. Sr excess accommodation in ALD grown SrTiO3 and its impact on the dielectric response

Author

Clima, S., Pourtois, G., Menou, N., Popovici, M., Rothschild, A., Kaczer, B., Van Elshocht, S., Wang, X.P., Swerts, J., Pierreux, D., De Gendt, S., Wouters, D.J., and Kittl, J.A.

Subjects
*ELECTRIC properties of metals, *STRONTIUM compounds, *EPITAXY, *DIELECTRICS, *CAPACITORS, *METAL-insulator transitions, *BAND gaps, *DENSITY functionals
Abstract

Abstract: A first-principles Density Functional Theory (DFT) approach was employed to predict the effective charges, phonon modes, band-gap and dielectric constant of a series of Sr-rich SrTiO3. The fabricated MIM capacitors confirm the theoretical trends obtained for the dielectric constants, the later showing a possible upper limit of the dielectric response. [Copyright &y& Elsevier]

Published
2009
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