1. Total ionizing dose effects on resistance stability of Pt/HfO2/Al2O3/TiN structure RRAM devices.
- Author
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Luo, Haipeng, Liang, Yifan, Tang, Minghua, Li, Gang, Xiong, Ying, Sun, Yunlong, Liu, Yulin, Ouyang, Sha, Xiao, Yongguang, Yan, Shaoan, Zhang, Wanli, Chen, Qilai, and Li, Zheng
- Subjects
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RESISTANCE to change , *IRRADIATION - Abstract
Total-ionizing dose effects on the resistive switching properties of HfO 2 /Al 2 O 3 bipolar resistive-random-access-memory devices under 60Co γ irradiation were investigated in this study. Insignificant impact was found for 60Co γ irradiation with a dose of 200 krad (Si) but the impact became significant for higher irradiation intensity of 1 Mrad (Si). The experiment results indicated that it is possible for device high resistance off-state or low resistance on-state to change after a total ionizing dose step stress threshold being surpassed. Moreover, it was found that the 60Co γ irradiation of 1 Mrad (Si) caused degradation of device high-resistance state, low-resistance state, set/reset voltages, and endurance characteristics, due to the simultaneous induce of oxygen vacancies and displacement damage. Unlabelled Image [ABSTRACT FROM AUTHOR]
- Published
- 2020
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