17 results on '"Neudeck, P. G."'
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2. Characterization of 4H <000-1> Silicon Carbide Films Grown by Solvent-Laser Heated Floating Zone
3. Atomic Force Microscope Observation of Growth and Defects on As-Grown (111) 3C-SiC Mesa Surfaces
4. Growth Evolution of Gallium Nitride Films on Stepped and Step-Free SiC Surfaces
5. Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications
6. Breakdown Degradation Associated with Elementary Screw Dislocations in 4H-SiC P+N Junction Rectifiers
7. Surface and Interface Study of PdCr/SiC Schottky Diode Gas Sensor Annealed at 425°C
8. Lateral/vertical Homoepitaxial Growth on 4H-SiC Surfaces Controlled by Dislocations
9. Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 °C
10. Simulation of Forescattered Electron Channeling Contrast Imaging of Threading Dislocations Penetrating SiC Surfaces
11. Recent Results From Epitaxial Growth on Step Free 4H-SiC Mesas
12. Accurate Lattice Constant and Mismatch Measurements of SiC Heterostructures by X-Ray Multiple-Order Reflections
13. Confinement of Screw Dislocations to Predetermined Lateral Positions in (0001) 4H-SiC Epilayers Using Homoepitaxial Web Growth
14. Material System for Packaging 500°C SiC Microsystems
15. Investigations of Non-Micropipe X-Ray Imaged Crystal Defects in SiC Devices
16. Silicon Carbide Die Attach Scheme for 500°C Operation
17. Breakdown Degradation Associated with Elementary Screw Dislocations in 4H-SiC P+N Junction Rectifiers.
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