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In this study, we present the steep switching characteristics of bendable feedback field-effect transistors (FBFETs) consisting of p(+)-i-n(+) Si nanowires (NWs) and dual-top-gate structures. As a result of a positive feedback loop in the intrinsic channel region, our FBFET features the outstanding switching characteristics of an on/off current ratio of approximately 10(6), and point subthreshold swings (SSs) of 18-19 mV/dec in the n-channel operation mode and of 10-23 mV/dec in the p-channel operation mode. Not only can these devices operate in n- or p-channel modes, their switching characteristics can also be modulated by adjusting the gate biases. Moreover, the device maintains its steep SS characteristics, even when the substrate is bent. This study demonstrates the promising potential of bendable NW FBFETs for use as low-power components in integrated circuits or memory devices.

In this study, we fabricated new spherical silica templates with submicrometer sized solid cores containing an encapsulated Au nanoparticle surrounded by a mesoporous shell structure. Hollow spherical carbon and polymer capsules, containing gold nanoparticles, were synthesized using these silica templates. The resulting carbon capsules inversely replicated the structure of the silica template and contained uniform pores with a narrow pore size distribution centered at 3.8 nm. These carbon capsules exhibited a BET surface area of >1000 m2 g-1 and a total pore volume of >1.0 cm3 g-1. In addition, hollow polymer capsules having a well-defined pore size were fabricated using a similar synthetic procedure.