Search

In this work, the endurance characteristics of Al-doped HfO2 (HAO)-based metal-ferroelectric-metal (MFM) capacitors (which were annealed at 1000 °C) with various doping concentrations were investigated. The doping concentration was optimized for the high annealing temperature (1000 °C) process. To investigate the impact of cycling pulses on the endurance characteristics of HAO-based MFM capacitor, the rise/fall time (t r/f ) and hold time (th ) for the cycling pulses were varied. Moreover, by adopting the recoverable fatigue process, the endurance characteristics under repetitive wake-up/fatigue processes were studied. The HAO capacitors achieved the remnant polarization (2Pr) of 23.767 μC cm−2 at pristine state under the high annealing temperature. Furthermore, it was demonstrated that the endurance characteristics (∼108 cycles) of the HAO capacitors were comparable to them of other HfO2-based ferroelectric capacitors. Lastly but not least, it turned out that the amount of oxygen and oxygen vacancies in the HAO thin film was dependent of doping concentrations for the film. The impact of oxygen and oxygen vacancies was quantitatively analyzed, in detail, with TEM, XPS and GIXRD analysis.

For a given three different Si doping concentrations at room and high temperatures, the threshold voltage shift (Δ

Thin films of ferroelectric materials are potential candidates to be implemented in the unfolding of a new paradigm in high-density memory devices. As the thickness of these films reaches the sub-10 nm level, the interface properties between the electrode and ferroelectric material undergo significant changes that play a crucial role in governing the ferroelectric behavior. The present state-of-the-art approach presents a detailed investigation of different high pressure annealing (HPA) conditions through simulation studies. The simulation studies were performed using Landau-Khalatnikov equations, with Landau's parameters calculated using the least regression method as described in the Method S1. The extracted coefficients were used to determine various relationships (free energy, ferroelectric potential and negative capacitance) with which to observe the impact of HPA on the negative capacitance (NC) effect on account of the majority ferroelectric phase. To verify the simulation results, pulse transient switching measurements were conducted using Pt/Ti/TiN/Hf

Herein, we introduce an interdigitated horizontal electrode (IHE) structure with a metal-based electron-collecting (or -injecting) electrode and a hole-collecting (or -injecting) electrode composed of a conductive polymeric material that has a nanoscale distance and is horizontally separated. In the IHE, a metal electrode is fabricated on a silicon-oxide substrate, and a self-assembled monolayer (SAM) is selectively bonded to the metal and the oxide to form a conductive polymer electrode by dip coating. Each of the SAM materials is composed of a head part bonded to the substrate surface and a tail part that is hydrophilic or hydrophobic. This inherent property makes the metal electrode hydrophobic and the oxide substrate hydrophilic. Ag is used as a metal electrode material and is combined with alkanethiol SAMs. The alkylsilane SAMs are combined with the silicon oxide substrate to make them hydrophilic, using poly (3, 4-ethylenedioxythiophene)-poly (PEDOT: PSS) as the conductive polymer material. In this study, we have found that there is a difference in the spacing between the two electrodes that depends on the combination of SAM materials. Each interval was spaced from a minimum of 140 nm to a maximum of 385 nm.

Thin films of ferroelectric materials are potential candidates to be implemented in the unfolding of a new paradigm in high-density memory devices. As the thickness of these films reaches the sub-10 nm level, the interface properties between the electrode and ferroelectric material undergo significant changes that play a crucial role in governing the ferroelectric behavior. The present state-of-the-art approach presents a detailed investigation of different high pressure annealing (HPA) conditions through simulation studies. The simulation studies were performed using Landau-Khalatnikov equations, with Landau's parameters calculated using the least regression method as described in the Method S1. The extracted coefficients were used to determine various relationships (free energy, ferroelectric potential and negative capacitance) with which to observe the impact of HPA on the negative capacitance (NC) effect on account of the majority ferroelectric phase. To verify the simulation results, pulse transient switching measurements were conducted using Pt/Ti/TiN/Hf0.5Zr0.5O2/TiN-based metal-ferroelectric-metal (MFM) devices to study the coercive field, interfacial capacitance and load resistance behavior. The results suggest that the non-ferroelectric portion (t-phase) coexists with the ferroelectric (o-phase) within the thin layer of the MFM capacitor adjacent to TiN electrode, which undergoes a phase transformation from the t-phase to the o-phase when exposed to different HPA conditions as well as electric field cycling during PS measurements. The simulation and experimental results confirm that the 550 °C at 50 atm N2 environment provides the best possibility of achieving the highest ferroelectric characteristics with the lowest proportion of the non-ferroelectric phase and thus the maximum NC effect as well.