47 results on '"Dell, A. M."'
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2. HgCdTe technology in Australia.
3. 1/f noise in HgCdTe infrared gated photodiodes.
4. Extending the tuning range of SWIR microspectrometers.
5. Fabry-Perot MEMS microspectrometers spanning the SWIR and MWIR.
6. Micro-electromechanical systems-based microspectrometers covering wavelengths from 1500nm to 5000nm.
7. Mechanical characteristics of filter structures for MEMS adaptive infrared detectors.
8. Crystallization and compositional changes in amorphous PECVD SiNx thin films.
9. Carrier transport characterization of high-density plasma-induced p-to-n type converted MWIR HgCdTe material.
10. Resonant-cavity-enhanced HgCdTe photodetectors.
11. Adaptive focal plane array (AFPA) technologies for integrated infrared microsystems.
12. SWIR hyperspectral detection with integrated HgCdTe detector and tunable MEMS filter.
13. A monolithically integrated HgCdTe SWIR photodetector and tunable MEMS-based optical filter.
14. Determination of mechanical properties of silicon nitride thin films using nanoindentation.
15. MEMS based tunable infrared sensors (Invited Paper).
16. Magnetoresistance characteristics of gamma-irradiated Al0.35 Ga0.65 N/GaN HFETs.
17. Characterization of crosstalk in HgCdTe n-on-p photovoltaic infrared arrays.
18. Accurate determination of composition profiles in abrupt MBE-grown HgCdTe heterostructures.
19. Chemical structure of low-temperature plasma-deposited silicon nitride thin films.
20. Determination of residual stress in low-temperature PECVD silicon nitride thin films.
21. The effects of vacuum baking on the I-V characteristics of LWIR HgCdTe photodiodes.
22. Refractive index engineering for a distributed Bragg reflector for a resonant-cavity-enhanced detector.
23. Lidar system for depolarization ratio measurements: development and preliminary results.
24. Minority carrier lifetime in abrupt MBE grown HgCdTe heterostructures.
25. HgCdTe long-wavelength infrared photovoltaic detectors formed by reactive ion etching.
26. Towards MEMS-based infrared tunable microspectrometers.
27. RIE-induced n-on-p junction HgCdTe photodiodes: effects of passivant technology on bake stability.
28. 60Co gamma-irradiation-induced defects in MOCVD n-GaN.
29. Mobility spectrum techniques for characterizing multilayer semiconductor structures.
30. Tunable Fabry-Perot cavities.
31. Transferable silicon nitride microcavities.
32. Excess noise in MWIR photovoltaic detectors fabricated using a new junction formation technology.
33. Laser-beam-induced current technique as a quantitative tool for HgCdTe photodiode characterization.
34. Anomalous drain current-voltage characteristics in AlGaN/GaN MODFETs at low temperatures.
35. Isothermal vapor phase epitaxy as a versatile technology for infrared photodetectors.
36. Status of MWIR HgCdTe photovoltaic detector technology in Australia.
37. Long-wavelength infrared photoconductor technology based on epitaxially grown Hg1-xCdxTe.
38. Erasure of poling-induced second-order optical nonlinearities in silica by UV exposure.
39. An optically resonant position read-out system for MEMS gas sensors
40. Long-wavelength infrared Fabry-Perot etalon for multi-spectral thermal imaging
41. Targeted sacrificial layer etching for MEMS release using microfluidic channels
42. A versatile instrumentation system for MEMS-based device optical characterization
43. Optical actuation of silicon cantilevers: modelling and experimental investigation
44. Recent advances in SWIR MEMS-based tunable Fabry-Pérot microspectrometers
45. Vertical transport in InAs/GaSb type-II strained layer superlattices for infrared focal plane array applications
46. On the accuracy of decay constant measurement by swept-cavity heterodyne cavity ringdown spectroscopy
47. Recent developments towards low-cost MEMS spectrometers
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