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1. Realization of atomically controlled dopant devices in silicon.

Author

Ruess FJ, Pok W, Reusch TC, Butcher MJ, Goh KE, Oberbeck L, Scappucci G, Hamilton AR, and Simmons MY

Subjects
Carbon chemistry, Crystallization, Electric Conductivity, Electrons, Hydrogen chemistry, Microscopy, Scanning Probe methods, Microscopy, Scanning Tunneling, Nanotechnology methods, Temperature, Time Factors, Metal Nanoparticles chemistry, Nanostructures chemistry, Silicon chemistry
Published
2007
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