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Information about several papers discussed at Burn-in and Test Socket (BiTS) workshop on problems affecting the use of sockets held in March 8-11, 2009 in Mesa, Arizona in exercise is presented. Topics include the analysis on the impact of C res degradation to the life of a test socket, the appropriate standard for sockets, and the need of complete requirements in working with test sockets. The workshop featured several semiconductor industry experts including Nick Langston and Valts Treiberg.

Information about several papers discussed at a symposium held February 27 to March 23, 2011 concerning extreme ultraviolet (EUV) lithography is presented. Topics include Extreme Ultraviolet Lithography System Development Association's (EUVA) effort to develop a Sn-droplet laser-produced plasma (LPP) source, collector optics and EUV sources. The symposium featured keynote speakers Hakaru Mizoguchi, Xavier Bozec, and Giovanni Bianucci.

Focuses on some of the reticle enhancement technologies presented at the 20th annual BACUS Symposium on Photomask Technology which was held in September 2000 in Monterey, California. Information on Samsung Electronics' application of KrF lithography; Topic of the papers presented at the event; Details on the ArF lithography of Hyundai Electronics Industries. INSET: A new strong-PSM paradigm: Phase Phirst!.

Information on the Institute of Electrical & Electronics Engineers Inc. (IEEE) International Solid-State Circuits Conference (ISSCC) 2010 held on February 7-11, 2010 in San Franscisco, California is presented. The conference centered on three-dimensional (3D) integration technologies such as system-in-package, through-silicon via (TSV) and contactless chip-to-chip communication. In addition, Intel Corp. also presented papers on 32 nanometers "Westmere" processors.

Information about several papers discussed at the 2007 International Electron Devices Meeting (IEDM) held in Washington, D.C. is presented. The event was attended by 1600 technologists to explore a wide range of innovation ideas. Kaizad Mistry, vice president of Intel, presented and disclosed some real details of the company's latest 45 nanometer (nm) process technology featuring HK+MG.

The article offers discusses the papers on the thermo-compression bonding (TCB) from semiconductor manufacturing company Intel and semiconductor packaging equipment supplier ASM that was featured in the Electronic Components and Technology Conference (ECTC). It offers information on the Intel thermo-compression bonding process with the use of substrate and pre-applied flux. Also discusses the examination of liquid phase contact (LPC) on the thermo-compression bonding process from ASM.

Presents information on the 1999 Annual BACUS Symposium on Photomask Technology and Management. Organizations that are committed to global assessment of the economic implications of the increased research and development; Presentation that won the best paper award at Photomask Japan; Requirement for meeting the demands of reticle fabrication for 130 nm production.

Features the 1997 annual BACUS Symposium on Photomask Technology and Management in Redwood City, California. Keynote speakers; Technical papers presented in the symposium; Semiconductor products introduced.

Information about several papers discussed at a forum held in 2010 sponsored by the Microelectronics Packaging and Test Engineering Council (MEPTEC) on the status of semiconductor packaging is presented. Topics include the forecast of emerging semiconductor devices and materials . The symposium featured several chief executive officers including Bill Bottoms.

The article reports on the new polarization problem introduced by immersion lithography due to contrast difference for transverse magnetic (TM) and transverse electric (TE) modes of light exposure. A paper presented by the Rochester Institute of Technology (RIT) at the SPIE Advanced Lithography conference suggests possibility of turning defect into double patterning with frequency doubling imaging. RIT researchers also suggest the use of multilayer resist stack to perform double exposure.

Information about several papers discussed at a symposium on yield productivity in the industry sponsored by the International SEMATECH Manufacturing Initiative (ISMI), an alliance of semiconductor producer, is presented. Discussions on how to clean safely wafer chuck without solvents and on detecting and preventing discharge events. Moreover, a debate on whether the industry should shift to 450 millimeter wafers also transpired at the event.

Information about several papers discussed at a symposium on very large scale integration is presented. Intel Corp. has presented a high-performance Tri-Gate transistor. International Business Machines Corp. identified the integration issues of fin field effect transistors for the 32 nm technology node and beyond. Freescale Semiconductor Inc. and Soitec SA presented a biaxial-uniaxial hybridized strained complementary metal oxide semiconductor technology.

Reports that a call for papers has been issued for the Conference on Lithography for Semiconductor Manufacturing, scheduled to be held in Edinburg, Scotland.