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Start Over Author "van Grunsven, E." Journal solid state technology

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1. System-in-package integration of passives using 3D through-silicon vias.

Author

Roozeboom, F., Dekkers, W., Làmy, Y., Klootwijk, J. H., van Grunsven, E., and Kim, H.-D.

Subjects
*ELECTRIC equipment, *SURFACE chemistry, *SEMICONDUCTOR industry, *SEMICONDUCTOR industrial equipment industry, *TECHNOLOGICAL innovations
Abstract

The article offers analyses on few technology options in 3D passive integration, as well as the in through-silicon via (TSV) technology. Si-integrated trench capacitors was created through a passive integration in order to composed a triple metal"insulator"metal (MIM) layer stacks. As a result, the use of TSB technology shows a very fine and high aspect of ratio, which can be wet-etched thru a conventional reactive ion etching (RIE).

Published
2008

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