20 results on '"Hua, Mengyuan"'
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2. Complex Ga2O3 polymorphs explored by accurate and general-purpose machine-learning interatomic potentials
3. Point-defect-driven flattened polar phonon bands in fluorite ferroelectrics
4. SPICE Modelling-Assisted evaluation of dynamic on-resistance characterization in Schottky p-GaN HEMTs amid synchronous buck transient instabilities
5. Atomic-scale smoothing of semiconducting oxides via plasma-enabled atomic-scale reconstruction
6. Bridging the gap between atomically thin semiconductors and metal leads
7. Enhancement of vacancy diffusion by C and N interstitials in the equiatomic FeMnNiCoCr high entropy alloy
8. Complex Ga2O3 polymorphs explored by accurate and general-purpose machine-learning interatomic potentials.
9. Forecasting household electric appliances consumption and peak demand based on hybrid machine learning approach
10. Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p -Gan Gate HEMTs.
11. Hole-Induced Degradation in E-Mode GaN MIS-FETs: Impact of Substrate Terminations.
12. Investigation of Dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ Under Switching Operation in Schottky-Type p-GaN Gate HEMTs.
13. Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor With Interdigital Built-in Schottky Barrier Diode.
14. Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET.
15. Performance and VTH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs With LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack.
16. Revealing the Nitridation Effects on GaN Surface by First-Principles Calculation and X-Ray/Ultraviolet Photoemission Spectroscopy.
17. Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs.
18. Investigation of Electrical Contacts to p-Grid in SiC Power Devices Based on Charge Storage Effect and Dynamic Degradation.
19. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.
20. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.
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