151. A Gate Driver of SiC MOSFET for Suppressing the Negative Voltage Spikes in a Bridge Circuit.
- Author
-
Gao, Feng, Zhou, Qi, Wang, Panrui, and Zhang, Chenghui
- Subjects
- *
METAL oxide semiconductor field-effect transistors , *VOLTAGE spikes , *BRIDGE circuits , *SILICON carbide , *POWER density , *TRANSIENT analysis - Abstract
SiC
mosfet has low on-state resistance and can work on high switching frequency, high voltage, and some other tough conditions with less temperature drift, which could provide the significant improvement of power density in power converters. However, for the bridge circuit in an actual converter, high dv/dt during fast switching transient of onemosfet will amplify the negative influence of parasitic components and produce the significant negative voltage spikes on the complementarymosfet , which will threaten its safe operation. This paper proposes a new gate driver circuit for SiCmosfet to attenuate the negative voltage spikes in a bridge circuit. The proposed gate driver adopts a simple voltage dividing circuit to generate a negative gate-source voltage as traditional and a passive triggered transistor with a series-connected capacitor to suppress the negative voltage spikes, which could satisfy the stringent requirements of fast switching SiCmosfet s under the high dc voltage condition with low cost and less complexity. An analysis is presented in this paper based on the simulation and experimental results with the performance comparison evaluated. [ABSTRACT FROM AUTHOR]- Published
- 2018
- Full Text
- View/download PDF