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A memory Alias Table holds a major role in Register Renaming Unit (RRU), which is responsible for maintaining the translation between logical registers to physical registers under the given instruction(s). This work presents the design of the memory Alias Table based on the SRAM‐based 8T‐Cell with multiport write, read, and content‐address operations for two‐way three operands machine cycle. The design of the memory Alias Table of size 32‐row × 6‐bit has SRAM‐based CAM cell of type 21T‐Cell that comprises four‐read ports, two‐write ports, and two‐content‐address ports. The content‐address examines the register under‐test against all contents of the memory Alias Table in parallel and releases the associated match index address. Results show that the four read ports operate simultaneously within the half‐cycle, while the two write ports operate simultaneously within the other half‐cycle. The operation of the two content‐address ports is managed during the half‐cycle of the read phase. Thus, the three operations occur within a single cycle without latency. HSPICE simulations using 90 nm/1 V CMOS process reveal that the memory Alias Table provides the three operations within a one‐cycle of 1 GHz consuming an average power of 0.13 mW. [ABSTRACT FROM AUTHOR]

A novel high-performance priority encoder design using standard CMOS library cell is proposed. The new encoder design implementation accommodates both high- and low-priority functionalities with scalable design structure through a special prefixing scheme. The prefixing scheme is applied to minimize the entire propagation delay and exploit the shared hardware between the high- and low-priority evaluation logics circuitry. The proposed encoder shows significant improvement in terms of speed, robustness for top-level floor plan routing, and modularity with pattern structure in compared to the existing encoder designs. Simulation results are conducted for different encoder inputs through 0.15-[micro]m TSMC CMOS technology, where 32-bit priority encoder is used as a test vehicle for comparison improvement measurements. The expected results show that the 32-bit encoder is operating at a maximum of 667-MHz operating frequency with total count of 1106 transistors and a maximum power consumption of total 13.8 mW. Index Terms--0.15-[micro]m TSMC CMOS technology, 32-bit encoder, 667 MHz, high- or low-priority encoder, modularity, prefixing scheme.

We present a new FIFO (first‐in first‐out) architecture for both synchronous and asynchronous communication for high‐speed and low‐power operation. Our FIFO design is reconfigurable and scalable using a separate datapath with an 8T‐Cell SRAM and control circuits, which enables specialization for different application requirements. The datapath uses a two‐phase clock system of nonoverlapping signals such that one signal increments the address pointer, while the other signal activates the memory decoder for data reading and writing. This structure halves the critical path delay and simplifies the timing operations between the memory decoder and address pointer while maintaining robustness against process‐voltage‐temperature (PVT) variations. Our design uses two alternative control circuits to manage separate synchronous and asynchronous operations by generating nonoverlapping control signals that drive the datapath circuit. The empty‐full flag circuitry records only the state of the address pointers' rollover independent of the memory size, and, thus, improves scalability and reconfigurability. Compared to prior works, our design is 5X faster with a 2.3X lower power consumption and has a throughput of 1 Giga‐Word/s. For a 64‐bit word size with a free latency cycle. Additionally, our design functions clocklessly with the synthesizable structure for asynchronous communication that leverages Internet of Things (IoT) and Networks on Chip (NoCs) applications. The presented FIFO design is reconfigurable and scalable using separate datapath and synchronous/asynchronous control circuits, which enables specialization for different application requirements. The datapath uses a two‐phase clock system of nonoverlapping signals with 8T‐Cell memory. Our design operates 5X faster with a 2.3X lower total power consumption with a throughput of 1 Giga‐Word/s. For a 64‐bit word size with a free latency cycle for the synchronous communication, and it serves for asynchronous Internet of Things (IoT) and Networks on Chip (NoCs) applications. [ABSTRACT FROM AUTHOR]

In this paper, we propose a novel sorting algorithm that sorts input data integer elements on-the-fly without any comparison operations between the data—comparison-free sorting. We present a complete hardware structure, associated timing diagrams, and a formal mathematical proof, which show an overall sorting time, in terms of clock cycles, that is linearly proportional to the number of inputs, giving a speed complexity on the order of O(N). Our hardware-based sorting algorithm precludes the need for SRAM-based memory or complex circuitry, such as pipelining structures, but rather uses simple registers to hold the binary elements and the elements’ associated number of occurrences in the input set, and uses matrix-mapping operations to perform the sorting process. Thus, the total transistor count complexity is on the order of O(N). We evaluate an application-specified integrated circuit design of our sorting algorithm for a sample sorting of N = 1024 elements of size K = 10-bit using 90-nm Taiwan Semiconductor Manufacturing Company (TSMC) technology with a 1 V power supply. Results verify that our sorting requires approximately 4– 6~\mu \texts to sort the 1024 elements with a clock cycle time of 0.5 GHz, consumes 1.6 mW of power, and has a total transistor count of less than 750 000. [ABSTRACT FROM PUBLISHER]

We present a new comparator design featuring wide-range and high-speed operation using only conventional digital CMOS cells. Our comparator exploits a novel scalable parallel prefix structure that leverages the comparison outcome of the most significant bit, proceeding bitwise toward the least significant bit only when the compared bits are equal. This method reduces dynamic power dissipation by eliminating unnecessary transitions in a parallel prefix structure that generates the N-bit comparison result after \lceil\log4N\rceil+\lceil\log16N\rceil+4 CMOS gate delays. Our comparator is composed of locally interconnected CMOS gates with a maximum fan-in and fan-out of five and four, respectively, independent of the comparator bitwidth. The main advantages of our design are high speed and power efficiency, maintained over a wide range. Additionally, our design uses a regular reconfigurable VLSI topology, which allows analytical derivation of the input-output delay as a function of bitwidth. HSPICE simulation for a 64-b comparator shows a worst case input-output delay of 0.86 ns and a maximum power dissipation of 7.7 mW using 0.15-\mum TSMC technology at 1 GHz. [ABSTRACT FROM AUTHOR]

We present a high-speed wide-range parallel counter that achieves high operating frequencies through a novel pipeline partitioning methodology (a counting path and state look-ahead path), using only three simple repeated CMOS-logic module types: an initial module generates anticipated counting states for higher significant bit modules through the state look-ahead path, simple D-type flip-flops, and 2-bit counters. The state look-ahead path prepares the counting path's next counter state prior to the clock edge such that the clock edge triggers all modules simultaneously, thus concurrently updating the count state with a uniform delay at all counting path modules/stages with respect to the clock edge. The structure is scalable to arbitrary N-bit counter widths (2-to-2N range) using only the three module types and no fan-in or fan-out increase. The counter's delay is comprised of the initial module access time (a simple 2-bit counting stage), one three-input and-gate delay, and a D-type flip-flop setup-hold time. We implemented our proposed counter using a 0.15-\mum TSMC digital cell library and verified maximum operating speeds of 2 and 1.8 GHz for 8- and 17-bit counters, respectively. Finally, the area of a sample 8-bit counter was 78 125 \mum^2 (510 transistors) and consumed 13.89 mW at 2 GHz. [ABSTRACT FROM AUTHOR]

Embedded SRAM design with high noise margin between read and write, low power, low supply voltages, and high speed become essential features in VLSI embedded applications. The complete embedded SRAM design of self-timing synchronization is proposed based on the CMOS eight-transistor (8T-Cell) memory cell circuit. The cell is based on the traditional six-transistor (6T-Cell) cross-coupled invertors with the addition of two NMOS transistors for separate read buffer circuit. The read buffer structure is based on pre-charging the read bit-line during the low value of read clock and evaluating the read bit-line during the high value of read clock, thereby maintaining one active line per column and eliminating the use of traditional sense amplifier with all its synchronization schemes. The simulation results show that the embedded SRAM of size 128-bit × 128-bit is operating at a maximum frequency of 200 MHz for Write and Read clock cycles with 1.62 V power supply, and measures a total average power consumption of 22.60 mW. All simulation results were conducted on 0.18 μm TSMC single poly and three layers of metals measuring a cell area of 2.2 × 3.0 μm2. The circuit is not meant to replace the SRAM with 6T-Cell transistor structure; however, it is attractive for applications related to high density with automation road-map design, such as graphic and network processor chips. In these applications, memory sizes are introduced in many different irregular geometries and uses all over the chip with storage sizes less than 20 k-bit, in addition, it is susceptible to large substrate noise as well as large coupling wire routing. [ABSTRACT FROM AUTHOR]