198 results on '"Ang, Kah-Wee"'
Search Results
2. Recent Advances in In-Memory Computing: Exploring Memristor and Memtransistor Arrays with 2D Materials
3. Author Correction: The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 heterojunction: a first-principles study
4. The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 heterojunction: a first-principles study
5. Switching Dynamics in Anti‐Ferroelectric Transistor for Multimodal Reservoir Computing.
6. Direct Observation of Semimetal Contact Induced Charge Doping and Strain Effect in CVD‐Grown Monolayer MoS2 Transistors.
7. Behaviour of induced states of substitutional and adatom impurity doping on electronic transport properties of single-layer black phosphorus
8. Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries
9. A new carbon allotrope: T5-carbon
10. Ultrasensitive and robust two-dimensional indium selenide flexible electronics and sensors for human motion detection
11. An Atomically Resolved Schottky Barrier Height Approach for Bridging the Gap between Theory and Experiment at Metal–Semiconductor Heterojunctions.
12. Coupled Ferroelectric‐Photonic Memory in a Retinomorphic Hardware for In‐Sensor Computing.
13. Technology and Integration Roadmap for Optoelectronic Memristor.
14. Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing
15. 2D photonic memristor beyond graphene: progress and prospects
16. Fabry-Perot cavity enhanced light-matter interactions in two-dimensional van der Waals heterostructure
17. High‐Performance Memristors Based on Few‐Layer Manganese Phosphorus Trisulfide for Neuromorphic Computing.
18. Reliable Memristor Crossbar Array Based on 2D Layered Nickel Phosphorus Trisulfide for Energy‐Efficient Neuromorphic Hardware.
19. A Dynamic Memory for Reservoir Computing Utilizing Ion Migration in CuInP2S6.
20. Zero-bias mid-infrared graphene photodetectors with bulk photoresponse and calibration-free polarization detection
21. Band alignment of atomic layer deposited TiO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy
22. High temperature study on the thermal properties of few-layer Mo0.5W0.5S2 and effects of capping layers
23. Enhancing Memory Window Efficiency of Ferroelectric Transistor for Neuromorphic Computing via Two‐Dimensional Materials Integration.
24. Attack Resilient True Random Number Generators Using Ferroelectric‐Enhanced Stochasticity in 2D Transistor.
25. Band alignment of atomic layer deposited high-k Al2O3/multilayer MoS2 interface determined by X-ray photoelectron spectroscopy
26. Dynamic Ferroelectric Transistor‐Based Reservoir Computing for Spatiotemporal Information Processing.
27. Design‐Dependent Switching Mechanisms of Schottky‐Barrier‐Modulated Memristors based on 2D Semiconductor.
28. Anomalously enhanced thermal stability of phosphorene via metal adatom doping: An experimental and first-principles study
29. Van der Waals Layer Transfer of 2D Materials for Monolithic 3D Electronic System Integration: Review and Outlook.
30. A MoS2 Hafnium Oxide Based Ferroelectric Encoder for Temporal‐Efficient Spiking Neural Network.
31. MoS2‑on-GaN Plasmonic Photodetector Using a Bowtie Striped Antenna Structure.
32. Nonvolatile Logic‐in‐Memory Computing based on Solution‐Processed CuI Memristor.
33. Recent progress on 2D materials-based artificial synapses.
34. A surface potential based compact model for two-dimensional field effect transistors with disorders induced transition behaviors.
35. Application of 2D Materials in Hardware Security for Internet‐of‐Things: Progress and Perspective.
36. Interface‐Modulated Resistive Switching in Mo‐Irradiated ReS2 for Neuromorphic Computing.
37. In‐Memory Computing using Memristor Arrays with Ultrathin 2D PdSeOx/PdSe2 Heterostructure.
38. Gate‐Defined Quantum Confinement in CVD 2D WS2.
39. Wafer‐Scale 2D Hafnium Diselenide Based Memristor Crossbar Array for Energy‐Efficient Neural Network Hardware.
40. Chapter 9 - Recent advances in black phosphorus and transition metal dichalcogenide–based electronic and optoelectronics devices
41. A potential superhard carbon allotrope: T5-carbon
42. Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon–carbon source/drain regions
43. Integrated process of photoresist trimming and dielectric hard mask etching for sub-50 nm gate patterning
44. Si charge avalanche enhances APD sensitivity beyond 100 GHz: made with readily available group IV germanium and silicon materials, a CMOS-compatible waveguide-integrated avalanche photodiode offers a gain-bandwidth of 105 GHz, extending Ge/Si APDs to high-bandwidth chip-to-chip interconnects and high-sensitivity fiber-optic communications
45. Suspended MoS2 Photodetector Using Patterned Sapphire Substrate.
46. Charge Carrier Mobility and Series Resistance Extraction in 2D Field‐Effect Transistors: Toward the Universal Technique.
47. Improvement of β-Ga2O3 MIS-SBD Interface Using Al-Reacted Interfacial Layer.
48. Volatile Organic Compound Sensors Based on 2D Materials.
49. An Analytical Method for Parameter Extraction in Oxide Semiconductor Field-Effect Transistors.
50. Strain-Transfer Structure Beneath the Transistor Channel for Increasing the Strain Effects of Lattice-Mismatched Source and Drain Stressors
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.