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The rich physical properties unveiled in a plethora of transition and rare-earth metal oxides have been attributed to the intricate interplays between the orbital, charge, and spin degrees of freedom. Among them, rare-earth manganites (RMnO3) have been attracting tremendous attention owing to the ionic size-induced lattice distortion dictated by the Goldschmidt tolerance factor and the substantial Jahn–Teller distortion unique to Mn3+ ions, which evidently have resulted in a variety of emergent characteristics in electronic, magnetic, and orbital ordering. In this work, we deliberately engineered the orientation of a series of orthorhombic YMnO3 (o-YMO) films grown on SrTiO3(100) [STO(100)] and SrTiO3(110) [STO(110)] substrates by means of pulsed laser deposition. The x-ray diffraction (XRD) and reciprocal space mapping revealed that o-YMO/STO(100) is c-axis-oriented and o-YMO/STO(110) is a-axis-oriented, respectively. The XRD ϕ-scans further indicate that both films have excellent in-plane crystallinity, allowing the exploration of anisotropies along the respective crystallographic orientations. Indeed, the x-ray absorption linear dichroism spectroscopy taken along the respective crystallographic orientations evidently exhibited substantial anisotropy. Theoretical fitting with configuration interaction cluster calculations suggests that the d 3 z 2 − r 2 orbitals are parallel to YMO[001]/(100), leading to stronger electron scattering along the c-axis. Independent polarization-dependent Δ R/R spectra obtained using the femtosecond pump–probe method exhibited substantial anisotropic behaviors in carrier relaxation dynamics when probing along different crystallographic orientations, presumably due to orbital ordering anisotropies. [ABSTRACT FROM AUTHOR]

New synthetic routes were devised for total synthesis of Fe3+‐bound (ferri−) salmycin B (Sal B) (1), glycan‐based Sal analogues 2–5 and their Fe3+‐unbound (desferri−) counterparts 1′–5′ for the structure to activity relationship (SAR) study. The results of SAR study reveal the effective structure of 1 and its desferri‐counterpart 1′ that are responsible for the observed inhibitory activity against Staphylococcus aureus (S. aureus). Among the analogues 2–5 and 2′–5′, glucose‐based analogue 2 and its desferri‐counterpart 2′ exhibited inhibitory potency comparable to 1 and 1′. Chemical modification of 2′ for further antibacterial study enabled us to discover desferri‐Sal analogue 7′ that endowed with a simpler pharmacophore structure but significantly higher antibacterial potency against methicillin‐sensitive and resistant S. aureus than the natural product 1′ and even the clinical vancomycin. Together with a better hydrolytic stability and shorter synthetic route, the analogue 7′ represents an attractive antibiotic lead for further exploration. [ABSTRACT FROM AUTHOR]

Background: The design and synthesis of hybrid molecules will explore finding new drugs. Objectives: The synthesized hybrid molecules to evaluate their biological properties. Methods: Apply click chemistry to tether flavonols and benzenesulfonamide. Results: Two drug candidates show potential against lung cancer. Conclusions: Two drug candidates did not affect the normal cells and provided a new drug design route. [ABSTRACT FROM AUTHOR]

This work reports molecular beam epitaxy (MBE) of two-dimensional (2D) GaSe1−xTex ternary alloys that have recently attracted a lot of interest in physics for prospective electronics and optoelectronics even though they face crucial challenges in their epitaxial technology. Disregarding a distinction in crystal phase symmetry of two end-terminals, i.e., hexagonal-GaSe (h-GaSe) and monoclinic-GaTe (m-GaTe), the majority of hexagonal-GaSe1−xTex (h-GaSe1−xTex) phase on a GaN/sapphire platform is guaranteed under our specific growth conditions without a visible sign of phase transition. We have also proposed extracting the Te composition of the ternary alloy via the experimental in-plane lattice constant, which is consistent with those indicated from energy dispersion X-ray data. Fascinatingly, the experimental and predictable band emission versus Te content displays a continuous redshift from 1.78 eV (h-GaSe) to 1.25 eV (h-GaSe0.4Te0.6) then a reversible blueshift to 1.46 eV (h-GaTe). Importantly, benefiting from the presence of Te incorporated atoms, the photoresponse performance of the hexagonal ternary alloy has greatly enhanced in comparison to the h-GaSe binary in terms of photocurrent density (up to 1250 nA cm−2 for h-GaSe0.65Te0.35 at only 300 mV bias). Overall, the results pave a way for phase/physical engineering of the alloys through the MBE process and realizing self-powered wafer-scale photodetectors based on 2D Ga-based monochalcogenide epitaxial thin films. [ABSTRACT FROM AUTHOR]

The magneto-structural coupling of BiFeO3 (BFO)–CoFe2O4 (CFO)/LaAlO3 (LAO) heteroepitaxy with various lateral sizes of CFO pillars embedded in a BFO matrix was investigated. A structural phase transformation of the BFO matrix was observed when the pillar size of CFO was increased to exceed 200 nm. Such structural transformation led to modification of magneto-elastic coupling behavior and magnetic anisotropy in the BFO–CFO/LAO system. The flexibility of tuning the pillar size of CFO, and hence, the strain and interfacial effect on the multiferroic system have significant application implications in these functional oxide nanocomposites. [ABSTRACT FROM AUTHOR]

Interest in bringing p- and n-type monolayer semiconducting transition metal dichalcogenides (TMD) into contact to form rectifying pn diode has thrived since it is crucial to control the electrical properties in two-dimensional (2D) electronic and optoelectronic devices. Usually this involves vertically stacking different TMDs with pn heterojunction or, laterally manipulating carrier density by gate biasing. Here, by utilizing a locally reversed ferroelectric polarization, we laterally manipulate the carrier density and created a WSe2 pn homojunction on the supporting ferroelectric BiFeO3 substrate. This non-volatile WSe2 pn homojunction is demonstrated with optical and scanning probe methods and scanning photoelectron micro-spectroscopy. A homo-interface is a direct manifestation of our WSe2 pn diode, which can be quantitatively understood as a clear rectifying behavior. The non-volatile confinement of carriers and associated gate-free pn homojunction can be an addition to the 2D electron-photon toolbox and pave the way to develop laterally 2D electronics and photonics. Bringing together p- and n-type monolayers of semiconducting transition metal dichalcogenides results in the formation of atomically thin pn junctions. Here, the authors laterally manipulate carrier density to create a WSe2 pn homojunction on a supporting ferroelectric BiFeO3 substrate. [ABSTRACT FROM AUTHOR]

The role of additives in facilitating the growth of conventional semiconducting thin films is well-established. Apparently, their presence is also decisive in the growth of two-dimensional transition metal dichalcogenides (TMDs), yet their role remains ambiguous. In this work, we show that the use of sodium bromide enables synthesis of TMD monolayers via a surfactant-mediated growth mechanism, without introducing liquefaction of metal oxide precursors. We discovered that sodium ions provided by sodium bromide chemically passivate edges of growing molybdenum disulfide crystals, relaxing in-plane strains to suppress 3D islanding and promote monolayer growth. To exploit this growth model, molybdenum disulfide monolayers were directly grown into desired patterns using predeposited sodium bromide as a removable template. The surfactant-mediated growth not only extends the families of metal oxide precursors but also offers a way for lithography-free patterning of TMD monolayers on various surfaces to facilitate fabrication of atomically thin electronic devices.

Interest in bringing p- and n-type monolayer semiconducting transition metal dichalcogenides (TMD) into contact to form rectifying pn diode has thrived since it is crucial to control the electrical properties in two-dimensional (2D) electronic and optoelectronic devices. Usually this involves vertically stacking different TMDs with pn heterojunction or, laterally manipulating carrier density by gate biasing. Here, by utilizing a locally reversed ferroelectric polarization, we laterally manipulate the carrier density and created a WSe 2 pn homojunction on the supporting ferroelectric BiFeO 3 substrate. This non-volatile WSe 2 pn homojunction is demonstrated with optical and scanning probe methods and scanning photoelectron micro-spectroscopy. A homo-interface is a direct manifestation of our WSe 2 pn diode, which can be quantitatively understood as a clear rectifying behavior. The non-volatile confinement of carriers and associated gate-free pn homojunction can be an addition to the 2D electron-photon toolbox and pave the way to develop laterally 2D electronics and photonics.