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A hybrid MPI+OpenMP parallelization strategy has been implemented into the density functional theory code FLEUR. Based on the full-potential linearized augmented plane-wave (FLAPW) method, FLEUR is a well-established all-electron code specialized on the simulation of materials properties of crystalline bulk solids and surfaces with significant electronic and magnetic complexity. Developed in over 30 years the Fortran implementation included two layers of MPI-based distributed memory parallelization that serves as a reference for our work. The revised code version shows superior performance, improved scalability and thereby opens the path to exploit current and future high performance computing architectures efficiently. Multiple threads per MPI process can be utilized by interfacing with optimized linear algebra subroutines from the BLAS and LAPACK libraries as well as in code sections with explicit OpenMP statements. We demonstrate that the additional multithreading helps to avoid the communication induced scalability limit of the pure-MPI version and simultaneously boosts the single node-performance on current multi-core systems. This enables FLEUR calculations for unit cells with over 1000 atoms to simulate extended defects, surfaces and disordered solids.

We demonstrate that topological invariants of band insulators can be derived efficiently from the eigenvalues of the local-orbital (LO) based embedding potential, called also the contact (lead) self-energy. The LO based embedding potential is a bulk quantity. Given the tight-binding Hamiltonian describing the bulk valence and conduction bands, it is constructed straightforwardly from the bulk wave functions satisfying the generalized Bloch condition. When the one-electron energy ɛ is located within a projected bulk band gap at a given planar wave vector k, the embedding potential becomes Hermitian. Its real eigenvalues exhibit distinctly different behavior depending on the topological properties of the valence bands, thus enabling unambiguous identification of bulk topological invariants. We consider the Bernevig-Hughes-Zhang model as an example of a time-reversal invariant topological insulator and tin telluride (SnTe) crystallized in a rock-salt structure as an example of a topological crystalline insulator

The search for new large band gap quantum spin Hall (QSH) and quantum anomalous Hall (QAH) insulators is critical for their realistic applications at room temperature. Here we predict, based on first principles calculations, that the band gap of QSH and QAH states can be as large as 1.01 eV and 0.35 eV in an H-decorated Bi(111) film. The origin of this giant band gap lies both in the large spin-orbit interaction of Bi and the H-mediated exceptional electronic and structural properties. Moreover, we find that the QAH state also possesses the properties of quantum valley Hall state, thus intrinsically realising the so-called valley-polarized QAH effect. We further investigate the realization of large gap QSH and QAH states in an H-decorated Bi(\={1}10) film and X-decorated (X=F, Cl, Br, and I) Bi(111) films., submitted to Physical Reveiw Letters on 25th of September 2014

Different from the two-dimensional (2D) topological insulator, the 2D topological crystalline insulator (TCI) phase disappears when the mirror symmetry is broken, e.g., upon placing on a substrate. Here, based on a new family of 2D TCIs - SnTe and PbTe monolayers - we theoretically predict the realization of the quantum anomalous Hall effect with Chern number C = 2 even when the mirror symmetry is broken. Remarkably, we also demonstrate that the considered materials retain their large-gap topological properties in quantum well structures obtained by sandwiching the monolayers between NaCl layers. Our results demonstrate that the TCIs can serve as a seed for observing robust topologically non-trivial phases., 5 pages, submitted on 27th Feb 2015

The fundamental aspects of spin-dependent transport processes and their interplay with temperature gradients, as given by the spin Seebeck coefficient, are still largely unexplored and a multitude of contributing factors must be considered. We used density functional theory together with a Monte-Carlo-based statistical method to simulate simple nanostructures, such as Co nanowires and films embedded in a Cu host or in vacuum, and investigated the influence of spin-disorder scattering on electron transport at elevated temperatures. While we show that the spin-dependent scattering of electrons due to temperature induced disorder of the local magnetic moments contributes significantly to the resistance, thermoelectric and spin-caloric transport coefficients, we also conclude that the actual magnitude of these effects cannot be predicted, quantitatively or qualitatively, without such detailed calculations., 10 pages, 6 figures

Electrons mediate many of the interactions between atoms in a solid. Their propagation in a material determines its thermal, electrical, optical, magnetic and transport properties. Therefore, the constant energy contours characterizing the electrons, in particular the Fermi surface, have a prime impact on the behavior of materials. If anisotropic, the contours induce strong directional dependence at the nanoscale in the Friedel oscillations surrounding impurities. Here we report on giant anisotropic charge density oscillations focused along specific directions with strong spin-filtering after scattering at an oxygen impurity embedded in the surface of a ferromagnetic thin film of Fe grown on W(001). Utilizing density functional theory, we demonstrate that by changing the thickness of the Fe films, we control quantum well states confined to two dimensions that manifest as multiple flat energy contours, impinging and tuning the strength of the induced charge oscillations which allow to detect the oxygen impurity at large distances ($\approx$ 50nm)., Comment: This paper has an explanatory supplement

A half-metal has been defined as a material with propagating electron states at the Fermi energy only for one of the two possible spin projections, and as such has been promoted as an interesting research direction for spin electronics. This review details recent advances on manganite thin film research within the field of spintronics, before presenting the structural, electronic and spin-polarized solid-state tunnelling transport studies that we have performed on heterostructures involving La(2/3)Sr(1/3)MnO(3) thin films separated by SrTiO(3) barriers. These experiments demonstrate that, with a polarization of spin [Formula: see text] electrons at the Fermi level that can reach 99%, the La(2/3)Sr(1/3)MnO(3)/SrTiO(3) interface for all practical purposes exhibits half-metallic behaviour. We offer insight into the electronic structure of the interface, including the electronic symmetry of any remaining spin [Formula: see text] states at the Fermi level. Finally, we present experiments that use the experimental half-metallic property of manganites as tools to reveal novel features of spintronics.

By combining first-principles calculations with transport theory we investigate the origin of the magnetoresistance of a magnetic tunnel junction consisting of a ferromagnetic and an antiferromagnetic lead. The (001) oriented Fe/vacuum/Cr planar junction serves as model junction. Even though the conduction electrons of antiferromagnetic Cr are spin-degenerate, it is possible to observe magnetoresistance due to two mechanisms: Firstly, the surface magnetism of Cr creates a spin-dependent potential barrier, and secondly, exchange-split surface states and resonances result in a tunneling conductance which depends on the relative orientation of the Fe and Cr magnetizations. Spin-dependent tunneling between a ferromagnet and an antiferromagnet happens frequently in tunneling setups such as in spin-polarized scanning tunneling microscopy or magnetic tunnel junctions for magnetic random access memory.

Results are presented of a first-principles calculation of the spin-polarized field emission from ferromagnetic Ni(111) and Ni(001) surfaces. The electronic structure of both surfaces exposed to an external field is determined by combining the surface-embedded Green function approach and the full-potential linearized augmented plane-wave (FLAPW) method within the local spin density approximation. We discuss the contributions of different states to the field-emission current. In particular, we show that delocalized states make similar contributions to that obtained at jellium surfaces while localized Ni d states contribute mostly through surface states and resonances. These contributions dominate in the minority spin and lead to a negative spin polarization of the emitted current.

We present an efficient method for calculating the conductance of ballistic electrons through an interface from first principles using the embedding approach of Inglesfield. In our method the Landauer-B\"uttiker formula for ballistic transport is expressed in terms of two quantities that are available in the embedded Green-function formalism without additional calculations. One is the embedding potential of bulk crystals on both sides of the interface and the other is the Green function in the interface region. As a proof of principle we calculate on the basis of the density-functional theory the spin-resolved electron transmission through a model system of ferromagnetic Co monolayers sandwiched between bulk Cu crystals. The relationship between our formulation and the Green-function formulation of Baranger and Stone is discussed.

The spin-polarized scanning tunneling microscope (SP-STM) operated in the constant current mode is proposed as a powerful tool to investigate complex atomic-scale magnetic structures of otherwise chemically equivalent atoms. The potential of this approach is demonstrated by successfully resolving the magnetic structure of Cr/Ag(111), which is predicted on the basis of ab initio vector spin-density calculations to be a coplanar noncollinear periodic 120\ifmmode^\circ\else\textdegree\fi{} N\'eel structure. Different operating modes of the SP-STM are discussed on the basis of the model of Tersoff and Hamann.