155 results on '"Delabie, Annelies"'
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2. Probing the spatial dimensions of nanoscale patterns with Rutherford backscattering spectrometry
3. Quantification of area-selective deposition on nanometer-scale patterns using Rutherford backscattering spectrometry
4. Impact of open‐air processing on atmospheric pressure plasma deposition of poly(ethylene oxide) coatings for antifouling applications.
5. Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask
6. Selectivity and Growth Rate Modulations for Ruthenium Area‐selective Deposition by Co‐Reagent and Nanopattern Design.
7. Chemical Vapor Deposition of a Single-Crystalline MoS2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface.
8. Quantified Uniformity and Selectivity of TiO2 Films in 45‐nm Half Pitch Patterns Using Area‐Selective Deposition Supercycles.
9. A First-Principles Investigation of the Driving Forces Defining the Selectivity of TiO2 Atomic Layer Deposition.
10. Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry
11. Two-dimensional WS2 crystals at predetermined locations by anisotropic growth during atomic layer deposition.
12. Chemical vapor deposition processes for the fabrication of epitaxial Si-O superlattices
13. Aminosilane small molecule inhibitors for area-selective deposition: Study of substrate-inhibitor interfacial interactions.
14. In situ analysis of nucleation reactions during TiCl4/H2O atomic layer deposition on SiO2 and H-terminated Si surfaces treated with a silane small molecule inhibitor.
15. Enhancing Performance and Function of Polymethacrylate Extreme Ultraviolet Resists Using Area-Selective Deposition.
16. Nucleation and growth mechanism for atomic layer deposition of Al2O3 on two-dimensional WS2 monolayer.
17. Interfaces of high- k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper)
18. Mechanisms for undesired nucleation on H-terminated Si and dimethylamino-trimethylsilane passivated SiO2 during TiO2 area-selective atomic layer deposition.
19. Ruthenocene and cyclopentadienyl pyrrolyl ruthenium as precursors for ruthenium atomic layer deposition: a comparative study of dissociation enthalpies
20. High Mobility Channel Materials and Novel Devices for Scaling of Nanoeelectronics beyond the Si Roadmap
21. Study of the reliability impact of chlorine precursor residues in thin atomic-layer-deposited Hf[O.sub.2] layers
22. Grazing Incidence-X-ray Fluorescence Spectrometry for the Compositional Analysis of Nanometer-Thin High-κDielectric HfO2 Layers
23. Estimation of fixed charge densities in hafnium-silicate gate dielectrics
24. Electrical characteristics of 8 Angstrom EOT Hf[O.sub.2]/TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions
25. Atomic layer deposition of hafnium oxide on germanium substrates
26. Observation and characterization of defects in HfO 2 high- K gate dielectric layers
27. Selectivity Enhancement for Ruthenium Atomic Layer Deposition in Sub‐50 nm Nanopatterns by Diffusion and Size‐Dependent Reactivity.
28. A chemisorbed interfacial layer for seeding atomic layer deposition on graphite.
29. ALD of Al2O3 for Carbon Nanotube vertical interconnect and its impact on the electrical properties
30. Surface Preparation Techniques for the Atomic Layer Deposition of Hafnium Oxide
31. Highly Scalable ALD-deposited Hafnium Silicate Gate Stacks for Low Standby Power Applications
32. Screening the High-k Layer Quality by Means of Open Circuit Potential Analysis and Wet Chemical Etching
33. ALD HfO2 surface preparation study
34. Area-Selective Deposition of Ruthenium by Area-Dependent Surface Diffusion.
35. Study of the coordination of Cu 2+ in zeolite Y: Interaction with water and ammonia
36. (Invited) Ru Selective Metal Deposition for Hybrid Metallization in Nano-Interconnect Applications.
37. Impact of SiO2 surface composition on trimethylsilane passivation for area-selective deposition.
38. Atomic imaging of nucleation of trimethylaluminum on clean and H2O functionalized Ge(100) surfaces.
39. Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy.
40. Preface: Atomic Layer Deposition Applications 11
41. Two-Dimensional Crystal Grain Size Tuning in WS2 Atomic Layer Deposition: An Insight in the Nucleation Mechanism.
42. The reaction of Cu(I)(1S and 3D) with N2O: an ab initio study
43. Evaluating the activation barriers for transition metal N2O reactions
44. Preface
45. Formation mechanism of 2D SnS2 and SnS by chemical vapor deposition using SnCl4 and H2S.
46. Area-Selective Atomic Layer Deposition of TiN, TiO2, and HfO2 on Silicon Nitride with inhibition on Amorphous Carbon.
47. The conversion mechanism of amorphous silicon to stoichiometric WS2.
48. Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates.
49. Study of Electron Traps Associated With Oxygen Superlattices in n-Type Silicon.
50. Preface: Atomic Layer Deposition Applications 8
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