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2 results on '"G. Salace"'

1. Inelastic tunneling spectra of an alkyl self-assembled monolayer using a MOS tunnel junction as a test-bed

Author

C. Petit, Dominique Vuillaume, Stéphane Lenfant, G. Salace, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Mathematics::Dynamical Systems, Analytical chemistry, 02 engineering and technology, Electron, Inelastic scattering, 01 natural sciences, Molecular physics, Tunnel effect, Tunnel junction, Condensed Matter::Superconductivity, 0103 physical sciences, Electrical and Electronic Engineering, 010306 general physics, Alkyl, Quantum tunnelling, chemistry.chemical_classification, Molecular electronics, Self-assembled monolayer, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, 0210 nano-technology
Abstract

IETS (Inelastic Electron Tunnelling Spectroscopy) technique was used in Metal-Oxide-Silicon (MOS) tunnel junctions to provide information concerning the vibrational and excitational modes. In this work, we use the IETS method to investigate electron-molecular vibration coupling in SAMs (Self Assembled Monolayer) using the MOS tunnel junctions as a test-bed.

Published
2005
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2. Role of interfaces on the direct tunneling and the inelastic tunneling behaviors through metal/alkylsilane/silicon junctions

Author

C. Petit, J. V. Yakhmi, G. Salace, Stéphane Lenfant, David Guerin, Dominique Vuillaume, Dinesh K. Aswal, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Silicon, Chemistry, Inelastic electron tunneling spectroscopy, Analytical chemistry, chemistry.chemical_element, Self-assembled monolayer, 02 engineering and technology, Surfaces and Interfaces, 010402 general chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Effective mass (solid-state physics), Covalent bond, Monolayer, Materials Chemistry, Molecule, Physical chemistry, Electrical and Electronic Engineering, 0210 nano-technology, Quantum tunnelling
Abstract

We studied the influence of the end group of the alkylsilane molecule used in Self Assembled Monolayer (SAM) in Silicon/SAM/Metal junctions. By Inelastic Electron Tunneling spectroscopy (IETS), we showed the formation of a covalent bond between the molecules and the gold electrode in the case of a thiol terminated alkylsilane. By electrical characterizations, we demonstrated that the thiol group at the interface avoids diffusion of gold into the molecule even for a 3 carbons chain. For this short molecule, we observed pure tunnel conduction with barrier height at the monolayer/Si and monolayer/Au interfaces found to be respectively 2.14 and 2.56 eV. These values were obtained using Simmons equation with an effective mass parameter m* = 0.16m e (m e = mass of the electron).This extends the demonstration of the excellent tunnel dielectric behavior of these organic monolayers down to 3 carbon atoms with a thiol/Au bond at the interface.

Published
2005

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