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The detection of surface electromyography (sEMG) signals on the skin has attracted increasing attention because of its ability to monitor muscle conditions in a noninvasive manner and thus possesses great application potential to assess athletic status and training efficiency in real time or to evaluate postoperative muscle rehabilitation conveniently. Here, a flexible wireless sEMG monitoring system that consists of a stretchable sEMG epidermal patch and a flexible printed circuit board to provide real‐time evaluation of muscle strength and fatigue is reported. The epidermal patch is designed to have good stretchability and permeability and optimized to ensure a low contact impedance with the skin and minimized background noise for sEMG signal acquisition with high fidelity. Six commonly used time‐domain and two frequency‐domain features extracted from sEMG signals are systematically analyzed, and a strategy for feature selection and pattern identification is proposed that eventually enables the real‐time assessment of muscle strength and fatigue by using an integrated system in a wearable form. [ABSTRACT FROM AUTHOR]

The simultaneous extraordinary electrical and mechanical properties of carbon nanotubes (CNTs) make them ideally suitable for flexible electronics, especially high-performance flexible integrated circuits (ICs), which are the core units of electronic systems for information processing. This paper reviews the recent progresses of high-performance flexible ICs based on CNTs, involving the performance boosting CNT-based thin-film transistors, the implementation of complementary metal–oxide–semiconductor (CMOS) circuits, and the realization of medium-to-large scale integrated circuits and monolithic three-dimension integration. Several examples of system-level applications are also presented, including active-matrix backplanes for flexible display and signal manipulating for sensing. The article ends with a perspective on CNT-based flexible electronics. [ABSTRACT FROM AUTHOR]

The piezophototronic effect is known as a three-way coupling between piezoelectric polarization, semiconductor property, and optical excitation in piezoelectric semiconductor materials to modify their energy band structures by strain-induced piezoelectric polarization charges, and thus to tune/control their optoelectronic processes of charge carrier generation, separation, recombination, and transport. In this work, the temperature dependence of the piezophototronic effect in wurtzite-structured CdS nanowires is investigated from 77 to 300 K. The piezophototronic effect is enhanced by over 550% under lower temperature due to the increased effective piezoelectric polarization surface/interface charges resulting from the reduced screening effect by decreased mobile charge carriers in CdS nanowires. Optoelectronic performances of CdS nanowires are systematically investigated under various light illuminations, strains, and temperatures. By analyzing the corresponding band diagrams, the piezophototronic effect is found to dominate the transport and separation processes of charge carriers. This study presents in-depth fundamental understanding about the piezophototronic effect and provides guidance for its future applications in optoelectronic devices. [ABSTRACT FROM AUTHOR]

Single-electrode triboelectric nanogenerators (SETENGs) significantly expand the application of triboelectric nanogenerators in various circumstances, such as touch-pad technologies. In this work, a theoretical model of SETENGs is presented with in-depth interpretation and analysis of their working principle. Electrostatic shield effect from the primary electrode is the main consideration in the design of such SETENGs. On the basis of this analysis, the impacts of two important structural parameters, that is, the electrode gap distance and the area size, on the output performance are theoretically investigated. An optimized electrode gap distance and an optimized area size are observed to provide a maximum transit output power. Parallel connection of multiple SETENGs with micro-scale size and relatively larger spacing should be utilized as the scaling-up strategy. The discussion of the basic working principle and the influence of structural parameters on the whole performance of the device can serve as an important guidance for rational design of the device structure towards the optimum output in specific applications. [ABSTRACT FROM AUTHOR]

A comprehensiveinvestigation was carried out on n-type ZnO nanowiresfor studying the temperature dependence of the piezotronic effectfrom 77 to 300 K. In general, lowering the temperature results ina largely enhanced piezotronic effect. The experimental results showthat the behaviors can be divided into three groups depending on thecarrier doping level or conductivity of the ZnO nanowires. For nanowireswith a low carrier density (<1017/cm3at77 K), the pieozotronic effect is dominant at low temperature fordictating the transport properties of the nanowires; an opposite changeof Schottky barrier heights at the two contacts as a function of temperatureat a fixed strain was observed for the first time. At a moderate doping(between 1017/cm3and 1018/cm3at 77 K), the piezotronic effect is only dominant at onecontact, because the screening effect of the carriers to the positivepiezoelectric polarization charges at the other end (for n-type semiconductors).For nanowires with a high density of carriers (>1018/cm3at 77 K), the piezotronic effect almost vanishes.This studynot only proves the proposed fundamental mechanism of piezotroniceffect, but also provides guidance for fabricating piezotronic devices. [ABSTRACT FROM AUTHOR]

We present that the electroluminescence (EL) propertiesof Mg-doped p-type GaN thin films can be tuned bythe piezo-phototroniceffect via adjusting the minority carrier injection efficiency atthe metal–semiconductor (M–S) interface by strain inducedpolarization charges. The device is a metal–semiconductor–metalstructure of indium tin oxide (ITO)–GaN–ITO. Under differentstraining conditions, the changing trend of the transport propertiesof GaN films can be divided into two types, corresponding to the different c-axis orientations of the films. An extreme value was observedfor the integral EL intensity under certain applied strain due tothe adjusted minority carrier injection efficiency by piezoelectriccharges introduced at the M–S interface. The external quantumefficiency of the blue EL at 430 nm was changed by 5.84% under differentstraining conditions, which is 1 order of magnitude larger than thechange of the green peak at 540 nm. The results indicate that thepiezo-phototronic effect has a larger impact on the shallow acceptorstates related EL process than on the one related to the deep acceptorstates in p-type GaN films. This study has greatsignificance on the practical applications of GaN in optoelectronicdevices under a working environment where mechanical deformation isunavoidable such as for flexible/printable light emitting diodes. [ABSTRACT FROM AUTHOR]

We demonstrate the first electric field induced transverse deflection of a single-crystal, free-standing ZnO microbelt as a result of converse piezoelectric effect. For a microbelt growing along the c-axis, a shear stress in the a-cplane can be induced when an electric field Eis applied along the a-axis of the wurtzite structure. As amplified by the large aspect ratio of the microbelt that grows along the c-axis, the strain localized near the root can be detected via the transverse deflection perpendicular to the ZnO microbelt. After an experimental approach was carefully designed and possible artifacts were ruled out, the experimentally observed degree of deflection of the microbelt agrees well with the theoretically expected result. The device demonstrated has potential applications as transverse actuators/sensors/switches and electric field induced mechanical deflectors. [ABSTRACT FROM AUTHOR]