11 results on '"J.-G. Provost"'
Search Results
2. InP-based photonic multiwavelength transmitter with DBR laser array
- Author
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K Katarzyna Lawniczuk, MJ Michael Wale, J.-G. Provost, Pawel Szczepanski, Ryszard Piramidowicz, Xaveer Leijtens, MK Meint Smit, Christophe Kazmierski, and Photonic Integration
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Materials science ,business.industry ,Transmitter ,Photonic integrated circuit ,Physics::Optics ,Optical power ,Multiplexing ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Arrayed waveguide grating ,law.invention ,Optics ,Distributed Bragg reflector laser ,Modulation ,law ,Optoelectronics ,Electrical and Electronic Engineering ,Photonics ,business - Abstract
We demonstrate an InP-based photonic multiwavelength transmitter realized by integrating an array of distributed Bragg reflector lasers with modulators in Mach-Zehnder configuration. An arrayed waveguide grating is used to multiplex the generated signals into a common optical output. The device is designed according to a generic integration concept, using standardized building blocks, and is fabricated in a multiproject wafer run. The device delivers up to 4 dBm of optical power into the fiber with a modulation data rate of 12.5 Gbps per transmission channel. The obtained performance makes it very promising for application in the next generation optical access networks as a key source in the central office part of the telecommunication systems.
- Published
- 2013
3. Amplitude Modulation and Frequency Chirp of an Injection-Locked Quantum Dash Semiconductor Laser
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Benjamin Lingnau, D. Erasmen, Jacky Even, Frédéric Grillot, Philip J. Poole, J.-G. Provost, Kathy Lüdge, Cheng Wang, Mohamed E. Chaibi, HAL, TelecomParis, Télécommunications Optiques (GTO), Laboratoire Traitement et Communication de l'Information (LTCI), Institut Mines-Télécom [Paris] (IMT)-Télécom Paris-Institut Mines-Télécom [Paris] (IMT)-Télécom Paris, Département Communications & Electronique (COMELEC), Télécom ParisTech, and Technische Universität Berlin (TU)
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Pulse-frequency modulation ,Materials science ,[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic ,business.industry ,02 engineering and technology ,Optical modulation amplitude ,Laser ,01 natural sciences ,law.invention ,010309 optics ,Amplitude modulation ,020210 optoelectronics & photonics ,Optics ,Quantum dot laser ,Pulse-amplitude modulation ,law ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Chirp ,[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic ,Optoelectronics ,business ,Phase modulation - Abstract
International audience; Injection-locked quantum dash laser exhibits a different FM-to-AM ratio as compared to the solitary one.Optical injection enhances the FM-AM phase difference. The linewidth enhancement factor can no longer becharacterized by the FM/AM technique.
- Published
- 2014
4. Frequency Chirp Stabilization in Semiconductor Distributed Feedback Lasers With External Control
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Didier Erasme, Frédéric Grillot, B. Thedrez, J.-G. Provost, K. Kechaou, HAL, TelecomParis, Télécommunications Optiques (GTO), Laboratoire Traitement et Communication de l'Information (LTCI), Institut Mines-Télécom [Paris] (IMT)-Télécom Paris-Institut Mines-Télécom [Paris] (IMT)-Télécom Paris, Département Communications & Electronique (COMELEC), and Télécom ParisTech
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Physics ,Optical fiber ,[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic ,business.industry ,Chirp spread spectrum ,Physics::Optics ,02 engineering and technology ,Laser ,01 natural sciences ,law.invention ,Semiconductor laser theory ,010309 optics ,Laser linewidth ,020210 optoelectronics & photonics ,Optics ,law ,0103 physical sciences ,[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic ,0202 electrical engineering, electronic engineering, information engineering ,Chirp ,Optoelectronics ,Physics::Atomic Physics ,business ,Coupling coefficient of resonators ,Quantum well - Abstract
International audience; It is well known that current modulation in diode lasers generates amplitude (AM) and optical frequency (FM) modulations. The frequency chirp under direct current modulation originates from variations in the carrier density and from the finite difference in carrier density between the laser on and off states. Modulation of the carrier density modulates the gain and the optical index causing the resonant mode to shift. This frequency chirp broadens the spectrum, which is a serious limitation for high-speed applications and optical fiber communications. At low frequencies, thermal effects also alter the frequency chirp. The aim of this paper is to show that the laser’s frequency chirp can be modified using an external control technique. The chirp response is evaluated via the determination of the chirp-to-power ratio (CPR) through a Mach-Zehnder interferometer. Experiments demonstrate that when an external optical feedback is properly adjusted, the CPR can be severely decreased over a wide range of modulation frequencies as compared to the free-running case. These preliminary results obtained on quantum well distributed feedback lasers (QW DFB) with low normalized coupling coefficient (L) demonstrate how to stabilize the CPR through the DFB facet phase effects or parameters such as the linewidth enhancement factor. In order to confirm this frequency chirp engineering, self- consistent calculations based on the transfer matrix method are also presented.
- Published
- 2012
5. Temperature dependence of dynamic properties and tolerance to optical feedback of high-speed 1.3-µm DFB quantum-dot lasers
- Author
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K. Merghem, M. Fischer, D.-Y. Cong, Beatrice Dagens, S. Azouigui, F. Gerschutz, Q. Zou, I. Krestnikov, A. Martinez, A. Kovsh, J.-G. Provost, Johannes Koeth, A. Ramdane, Département Electronique et Physique (EPH), Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Services répartis, Architectures, MOdélisation, Validation, Administration des Réseaux (SAMOVAR), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Nanoplus Nanosystems and Technologies GmbH, Nanoplus, and Innolume (Innolume GmbH)
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Semiconductor laser ,02 engineering and technology ,7. Clean energy ,Gallium arsenide ,law.invention ,chemistry.chemical_compound ,020210 optoelectronics & photonics ,Optics ,law ,0202 electrical engineering, electronic engineering, information engineering ,Quantum dot (QD) ,Optical feedback ,Electrical and Electronic Engineering ,Physics ,business.industry ,Relaxation frequency ,020208 electrical & electronic engineering ,Biasing ,Atmospheric temperature range ,Laser ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,chemistry ,Transmission (telecommunications) ,Quantum dot laser ,[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic ,Optoelectronics ,Coherence collapse ,business ,Constant (mathematics) - Abstract
International audience; The temperature dependence of the dynamic performance of p-doped InAs/GaAs quantum-dot distributed feedback (DFB) lasers emitting at 1.3 µm is investigated. A maximum relaxation frequency of ~7 GHz is demonstrated for a constant bias current over the whole 25°C-85°C temperature range. The Henry factor is temperature independent and remains constant at ~2.5. The effect of external optical feedback is assessed on the same device in a 10-Gb/s transmission over 20 km
- Published
- 2011
6. Optical feedback tolerance of quantum dot and quantum dash based semiconductor lasers operating at 1.55µm
- Author
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Slimane Loualiche, Frédéric Grillot, Francois Lelarge, Olivier Dehaese, O. Le Gouezigou, Dalila Make, Kamel Merghem, Anthony Martinez, Beatrice Dagens, Abderrahim Ramdane, Alain Accard, Rozenn Piron, J.-G. Provost, Qin Zou, S. Azouigui, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne, THALES [France]-ALCATEL, Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS)
- Subjects
Materials science ,Differential gain ,Physics::Optics ,02 engineering and technology ,01 natural sciences ,law.invention ,Semiconductor laser theory ,010309 optics ,020210 optoelectronics & photonics ,Optics ,Operating temperature ,law ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Electrical and Electronic Engineering ,semiconductor laser ,business.industry ,quantum dot ,Laser ,Atomic and Molecular Physics, and Optics ,quantum dash ,Quantum dot laser ,Quantum dot ,Optical cavity ,[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic ,Optoelectronics ,Coherence collapse ,business ,optical feedback ,Coherence (physics) - Abstract
International audience; This paper reports on the tolerance of low-dimensional InAs/InP quantum-dash- and quantum-dot-based semiconductor lasers to optical feedback in the 1.55 mum window. For this purpose, the onset of coherence collapse (CC) is experimentally determined and systematically investigated as a function of different laser parameters, such as the injection current, differential gain, temperature, and photon lifetime. It is in particular found that for both material systems the onset of CC increases with the injection current in a similar way to bulk or quantum-well-based devices. Of most importance, we experimentally show that the differential gain plays a key role in the optical feedback tolerance. It is indeed shown to determine not only the range of the onset of CC but also the dependence of this threshold both on the temperature and laser cavity length. Increasing the operating temperature from 25degC to 85degC leads to a decrease of the onset of CC by a factor of only ~3 dB, well accounted for by the variation of the differential gain in this temperature range. We find no difference in the tolerance to external reflections of a truly 3-D confined quantum-dot-based laser and a quantum dash device of the same cavity length, which have similar differential gains. A tentative analysis of our data is finally carried out, based on existing models.
- Published
- 2009
7. Electroabsorption modulator laser for cost-effective 40 Gbit/s networks with low drive voltage, chirp and temperature dependence
- Author
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Alexandre Garreau, J.-G. Provost, Palle Jeppesen, Fabrice Blache, Christophe Kazmierski, Jorge Seoane, Michael Stübert Berger, Guy Aubin, Christophe Jany, Christoffer Felix Jespersen, and Kamel Merghem
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Materials science ,business.industry ,Single-mode optical fiber ,Laser ,law.invention ,Semiconductor laser theory ,Compensation (engineering) ,Optics ,Transmission (telecommunications) ,law ,Chirp ,Electrical and Electronic Engineering ,business ,Low voltage ,Voltage - Abstract
The performances of a novel low-chirp electroabsorption modulator laser module are presented. Transmission is analysed in standard singlermode fibre at 40 Gbit/s. Propagation without chromatic dispersion compensation up to 2 km exhibits a low penalty variation over a wide temperature range. A propagation scheme with compensation leads to negligible impairment at 88 km.
- Published
- 2009
8. Stable Above-Threshold Linewidth Enhancement Factor in a 1.52μm InAs/InP (311B) Quantum Dot Laser
- Author
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Frédéric Grillot, Slimane Loualiche, A. Martinez, Kamel Merghem, Luke F. Lester, F. Alexandre, J.-G. Provost, Rozenn Piron, Olivier Dehaese, A. Ramdane, GRILLOT, Frédéric, Center for High Technology Materials (CHTM), The University of New Mexico [Albuquerque], Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Alcatel Lucent Bell Labs, ALCATEL, Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS)
- Subjects
[PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics] ,[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics] ,Materials science ,[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic ,business.industry ,Low gain ,020208 electrical & electronic engineering ,02 engineering and technology ,Laser ,3. Good health ,law.invention ,Gallium arsenide ,chemistry.chemical_compound ,Laser linewidth ,020210 optoelectronics & photonics ,chemistry ,Quantum dot laser ,law ,0202 electrical engineering, electronic engineering, information engineering ,Indium phosphide ,[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic ,Optoelectronics ,business - Abstract
The alphaH-factor behavior with current is investigated in a 1.52 mum InAs/InP (311B) QD laser. It is shown that due to low gain compression effects, no divergence of the alphaH-factor occurs unlike 1.3 mum InAs/GaAs QD lasers.
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- 2008
9. Floor free 10-Gb/s transmission with directly modulated GaInNAs-GaAs 1.35-μm laser for metropolitan applications.
- Author
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B. Dagens, A. Martinez, D. Make, O. Le Gouezigou, J.-G. Provost, V. Sallet, K. Merghem, J.-C. Harmand, A. Ramdane, and B. Thedrez
- Abstract
Among the new semiconductor materials for telecom devices, the GaInNAs-GaAs structure presents interesting properties for low-cost applications, like high differential gain and high T0. Another key aspect of the performance is the behavior of the GaInNAs-GaAs based lasers under high bit rate direct modulation. Here, we demonstrate the dynamic capabilities of GaInNAs-GaAs three-quantum-well ridge structure through 2.5-Gb/s directly modulated laser emission and transmission on standard fiber, in the temperature range 25°C-85°C. Besides transmission is demonstrated up to 10 Gb/s at 25°C on the same fiber, without penalty and bit-error-rate floor. [ABSTRACT FROM PUBLISHER]
- Published
- 2005
- Full Text
- View/download PDF
10. Phase correlation between longitudinal modes in semiconductor self-pulsating DBR lasers.
- Author
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J. Renaudier, G.-H. Duan, J.-G. Provost, H. Debregeas-Sillard, and P. Gallion
- Abstract
Phase correlation leading to self-pulsation (SP) in semiconductor distributed Bragg reflector (DBR) lasers is investigated experimentally and theoretically. Under proper biasing conditions, the laser oscillates with three main modes and we observe that each two-modes beating provides SP with identical spectral linewidth. Under the same operating conditions, the measured spectral linewidths of the beating modes are much larger than the linewidth of the self-pulsating signal. These results demonstrate the natural occurrence of passive mode-locking (PML) and phase correlation in semiconductor DBR lasers. A model based on multimode coupled-wave rate equations, including four-wave mixing (FWM), is developed to describe PML and SP in the gain region of the laser cavity. This model demonstrates that the existence of phase correlation between longitudinal modes is due to FWM. [ABSTRACT FROM PUBLISHER]
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- 2005
- Full Text
- View/download PDF
11. AM and RIN of a tunable optically pumped 1.6-μm VCSEL.
- Author
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H. Halbritter, F. Riemenschneider, J. Jacquet, J.-G. Provost, I. Sagnes, and P. Meissner
- Abstract
This letter presents for the first time the dynamic characteristics of a tunable optically pumped 1.6-μm vertical-cavity surface-emitting laser (VCSEL) based on micromechanic wavelength tuning. The study includes analysis of the small-signal amplitude modulation response, the relative intensity noise, and the influence of different pump lasers on the VCSEL noise. From the measurements, characteristic semiconductor parameters have been derived and are presented. [ABSTRACT FROM PUBLISHER]
- Published
- 2004
- Full Text
- View/download PDF
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