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Occupancy of different structural positions in a crystal lattice often seems to play a key role in material prop-erties. Several experimental techniques have been developed to uncover this issue, all of them being mostly bulk sensitive. However, many materials including topological insulators (TIs), which are among the most intriguing modern materials, are intended to be used in devices as thin films, for which the sublattice occupancy may differ from the bulk. One of the possible approaches to occupancy analysis is X-ray Photoelectron Diffraction (XPD), a structural method in surface science with chemical sensitivity. We applied this method in a case study of Sb2(Te1-xSex)3 mixed crystals, which belong to prototypical TIs. We used high-angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) as a reference method to verify our analysis. We revealed that the XPD data for vacuum cleaved bulk crystals are in excellent agreement with the reference ones. Also, we demonstrate that the anion occupancy near a naturally formed surface can be rather different from that of the bulk. The present results are relevant for a wide range of compositions where the system remains a topological phase, as we ultimately show by probing the transiently occupied topological surface state above the Fermi level by ultrafast photoemission.

Topological phases of matter offer exciting possibilities to realize lossless charge and spin information transport on ultrafast time scales. However, this requires detailed knowledge of their nonequilibrium properties. Here, we employ time-, spin- and angle-resolved photoemission to investigate the ultrafast response of the Sb(111) spin-polarized surface state to femtosecond-laser excitation. The surface state exhibits a giant mass enhancement which is observed as a kink structure in its energy-momentum dispersion above the Fermi level. The kink structure, originating from the direct coupling of the surface state to the bulk continuum, is characterized by an abrupt change in the group velocity by ~70%, in agreement with our GW-based band structure calculations. Our observation of this connectivity in the transiently occupied band structure enables the unambiguous experimental verification of the topological nature of the surface state. The influence of bulk-surface coupling is further confirmed by our measurements of the electron dynamics, which show that bulk and surface states behave as a single thermalizing electronic population with distinct contributions from low-k electron-electron and high-k electron-phonon scatterings. These findings are important for future applications of topological semimetals and their excitations in ultrafast spintronics. Understanding the coupling between spin-polarised topological surface states and the bulk provides insight into ultrafast spin dynamics. Here, this coupling is shown to be accompanied by a large mass enhancement in the Sb(111) surface electronic structure, leading to unusual dynamics.

Finding stimuli capable of driving an imbalance of spin-polarised electrons within a solid is the central challenge in the development of spintronic devices. However, without the aid of magnetism, routes towards this goal are highly constrained with only a few suitable pairings of compounds and driving mechanisms found to date. Here, through spin- and angle-resolved photoemission along with density functional theory, we establish how the $p$-derived bulk valence bands of semiconducting 1T-HfSe$_2$ possess a local, ground-state spin texture spatially confined within each Se-sublayer due to strong sublayer-localised electric dipoles orientated along the $c$-axis. This hidden spin-polarisation manifests in a `coupled spin-orbital texture' with in-equivalent contributions from the constituent $p$-orbitals. While the overall spin-orbital texture for each Se sublayer is in strict adherence to time-reversal symmetry (TRS), spin-orbital mixing terms with net polarisations at time-reversal invariant momenta are locally maintained. These apparent TRS-breaking contributions dominate, and can be selectively tuned between with a choice of linear light polarisation, facilitating the observation of pronounced spin-polarisations at the Brillouin zone centre for all $k_z$. We discuss the implications for the generation of spin-polarised populations from 1T-structured transition metal dichalcogenides using a fixed energy, linearly polarised light source., Comment: 11 pages, 6 figures

The Fermi arcs are signatures of exotic states in solids because they defy conventional concept of Fermi surfaces as closed contours in momentum space. Fermi arcs were first discovered in cuprates, and caused by the pseudogap. Weyl semimetals provided another way to generate Fermi arcs by breaking either the time reversal symmetry (TRS) or inversion symmetry of a 3D Dirac semimetal, which can result in a Weyl semimetal with pairs of Weyl nodes that have opposite chirality. The bulk-boundary correspondence associated with the Chern number leads to the emergence of Fermi arcs on the boundary. Here, we present experimental evidence that pairs of magnetically split hole- and electron-like Fermi arcs emerge below the Neel temperature, in the antiferromagnetic (AFM) state of cubic NdBi due to a novel band splitting effect. Whereas TRS is broken by the AFM order, both inversion and nonsymmorphic TRS are preserved in the bulk, precluding the possibility of a Weyl semimetal. The observed magnetic splitting is highly unusual, as it creates bands of opposing curvature, that changes with temperature and follows the antiferromagnetic order parameter. This is completely different from previously reported cases of magnetic splittings such as traditional Zeeman and Rashba, where the curvature of the bands is preserved. Therefore, our finding represents a new Fermionic state created by new type of magnetic band splitting in the presence of a long-range AFM order that are not readily explained by existing theoretical ideas., 16 pages, 4 figures main text and 20 pages, 12 figures supplement

Ferromagnetic topological insulators exhibit the quantum anomalous Hall effect, which is potentially useful for high-precision metrology, edge channel spintronics, and topological qubits. The stable 2+ state of Mn enables intrinsic magnetic topological insulators. MnBi2Te4 is, however, antiferromagnetic with 25 K Néel temperature and is strongly n-doped. In this work, p-type MnSb2Te4, previously considered topologically trivial, is shown to be a ferromagnetic topological insulator for a few percent Mn excess. i) Ferromagnetic hysteresis with record Curie temperature of 45–50 K, ii) out-of-plane magnetic anisotropy, iii) a 2D Dirac cone with the Dirac point close to the Fermi level, iv) out-of-plane spin polarization as revealed by photoelectron spectroscopy, and v) a magnetically induced bandgap closing at the Curie temperature, demonstrated by scanning tunneling spectroscopy (STS), are shown. Moreover, a critical exponent of the magnetization β ≈ 1 is found, indicating the vicinity of a quantum critical point. Ab initio calculations reveal that Mn–Sb site exchange provides the ferromagnetic interlayer coupling and the slight excess of Mn nearly doubles the Curie temperature. Remaining deviations from the ferromagnetic order open the inverted bulk bandgap and render MnSb2Te4 a robust topological insulator and new benchmark for magnetic topological insulators., The authors thank Ondrej Man for help with lamella preparation for STEM and gratefully acknowledge financial support from the Austrian Science Funds (FWF, I4493-N: P30960-N27), the Impuls- und Vernetzungsfonds der Helmholtz-Gemeinschaft (Grant No. HRSF-0067, Helmholtz-Russia Joint Research Group), the CzechNanoLab project LM2018110 funded by MEYS CR, the CEITEC Nano Research Infrastructure, the Swedish Research Council (Project No. 821-2012-5144), the Swedish Foundation for Strategic Research (Project No. RIF14-0053), the Spanish Ministerio de Ciencia e Innovación (Project No. PID2019-103910GB-I00), Tomsk State University (Project No. 8.1.01.2018), and Saint Petersburg State University (Project No. 73028629). The work was also funded by the Deutsche Forschungsgemeinschaft within SPP1666 Topological Insulators and Germany's Excellence Strategy—Cluster of Excellence Matter and Light for Quantum Computing (ML4Q) EXC 2004/1 — 390534769, and the Graphene Flagship Core 3. G.Bihlmayer gratefully acknowledges computing resources on the supercomputer JURECA at the Jülich Supercomputing Centre., Open access funding enabled and organized by Projekt DEAL.

For hybrid organic-inorganic as well as all-inorganic lead halide perovskites a Rashba effect has been invoked to explain the high efficiency in energy conversion by prohibiting direct recombination. Both a bulk and surface Rashba effect have been predicted. In the valence band of methylammonium (MA) lead bromide a Rashba effect has been reported by angle-resolved photoemission and circular dichroism with giant values of 7-11 eV angstrom. We present band dispersion measurements of MAPbBr(3) and spin-resolved photoemission of CsPbBr3 to show that a large Rashba effect detectable by photoemission or circular dichroism does not exist and cannot be the origin of the high effciency.

Vanadium‐doped Bi2–xTe2.4Se0.6 single crystals, with x = 0.015 and 0.03, are grown by the Bridgman method. Bandstructure characterization by angle‐resolved photoemission spectroscopy (ARPES) measurements shows gapless topological surface states for both vanadium concentrations. The Van‐der‐Pauw resistivity, the Hall charge carrier density, and the mobility in the temperature range from 0.3 to 300 K are strongly dependent on vanadium concentration, with carrier densities as low as 1.5 × 1016 cm−3 and mobilities as high as 570 cm2 V−1s−1. As expected for transport in gapless topological surface states, the resistivity, carrier density, and mobility are constant below 10 K. The magnetoresistance shows weak antilocalization for both vanadium concentrations in the same temperature range. The weak antilocalization is analyzed with the Hikami–Larkin–Nagaoka model, which yields phase‐coherence lengths of up to 250 nm for x = 0.015. Deutsche Forschungsgemeinschaft http://dx.doi.org/10.13039/501100001659 Helmholtz-Gemeinschaft http://dx.doi.org/10.13039/501100001656

We show that, although the equilibrium band dispersion of the Shockley-type surface state of two-dimensional Au(111) quantum films grown on W(110) does not deviate from the expected free-electron-like behavior, its nonequilibrium energy-momentum dispersion probed by time- and angle-resolved photoemission exhibits a remarkable kink above the Fermi level due to a significant enhancement of the effective mass. The kink is pronounced for certain thicknesses of the Au quantum well and vanishes in the very thin limit. We identify the kink as induced by the coupling between the Au(111) surface state and emergent quantum-well states which probe directly the buried gold-tungsten interface. The signatures of the coupling are further revealed by our time-resolved measurements which show that surface state and quantum-well states thermalize together behaving as dynamically locked electron populations. In particular, relaxation of hot carriers following laser excitation is similar for both surface state and quantum-well states and much slower than expected for a bulk metallic system. The influence of quantum confinement on the interplay between elementary scattering processes of the electrons at the surface and ultrafast carrier transport in the direction perpendicular to the surface is shown to be the reason for the slow electron dynamics. Nanyang Technological University Published version Financial support from the Impuls-und Vernetzungsfonds der Helmholtz-Gemeinschaft under Grant No. HRSF-0067 (Helmholtz-Russia Joint Research Group) is gratefully acknowledged. M.B. gratefully acknowledges financial support from the Nanyang Technological University, NAP-SUG.

Renewed interest in the ferroelectric semi-conductor germanium telluride was recently triggered by the direct observation of a giant Rashba effect and a 30-year-old dream about a functional spin field-effect transistor. In this respect, all-electrical control of the spin texture in this material in combination with ferroelectric properties at the nanoscale would create advanced functionalities in spintronics and data information processing. Here, we investigate the atomic and electronic properties of GeTe bulk single crystals and their (111) surfaces. We succeeded in growing crystals possessing solely inversion domains of similar to 10 nm thickness parallel to each other. Using HAADF-TEM we observe two types of domain boundaries, one of them being similar in structure to the van der Waals gap in layered materials. This structure is responsible for the formation of surface domains with preferential Te-termination (similar to 68%) as we determined using photoelectron diffraction and XPS. The lateral dimensions of the surface domains are in the range of similar to 10-100 nm, and both Ge- and Te-terminations reveal no reconstruction. Using spin-ARPES we establish an intrinsic quantitative relationship between the spin polarization of pure bulk states and the relative contribution of different terminations, a result that is consistent with a reversal of the spin texture of the bulk Rashba bands for opposite configurations of the ferroelectric polarization within individual nanodomains. Our findings are important for potential applications of ferroelectric Rashba semiconductors in nonvolatile spintronic devices with advanced memory and computing capabilities at the nanoscale.

Topological insulators constitute a new phase of matter protected by symmetries. Time-reversal symmetry protects strong topological insulators of the Z2 class, which possess an odd number of metallic surface states with dispersion of a Dirac cone. Topological crystalline insulators are merely protected by individual crystal symmetries and exist for an even number of Dirac cones. Here, we demonstrate that Bi-doping of Pb1−xSnxSe (111) epilayers induces a quantum phase transition from a topological crystalline insulator to a Z2 topological insulator. This occurs because Bi-doping lifts the fourfold valley degeneracy and induces a gap at \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\bar \Gamma $$\end{document}Γ¯, while the three Dirac cones at the \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\bar{\rm M}}$$\end{document}M¯ points of the surface Brillouin zone remain intact. We interpret this new phase transition as caused by a lattice distortion. Our findings extend the topological phase diagram enormously and make strong topological insulators switchable by distortions or electric fields., Transitions between topological phases of matter protected by different symmetries remain rare. Here, Mandal et al. report a quantum phase transition from a topological crystalline insulator to a Z2 topological insulator by doping Bi into Pb1-xSnxSe (111) thin films.

SmB6 is predicted to be the first member of the intersection of topological insulators and Kondo insulators, strongly correlated materials in which the Fermi level lies in the gap of a many-body resonance that forms by hybridization between localized and itinerant states. While robust, surface-only conductivity at low temperature and the observation of surface states at the expected high symmetry points appear to confirm this prediction, we find both surface states at the (100) surface to be topologically trivial. We find the \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\bar{\varGamma }}$$\end{document}Γ¯ state to appear Rashba split and explain the prominent \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\bar X$$\end{document}X¯ state by a surface shift of the many-body resonance. We propose that the latter mechanism, which applies to several crystal terminations, can explain the unusual surface conductivity. While additional, as yet unobserved topological surface states cannot be excluded, our results show that a firm connection between the two material classes is still outstanding., Samarium hexahoride is argued to be a topological Kondo insulator, but this claim remains under debate. Here, Hlawenka et al. provide a topologically trivial explanation for the conducting states at the (100) surface of samarium hexaboride; an explanation based on Rashba splitting and a surface shift of the Kondo resonance.

Rapid development of experimental techniques has enabled real time studies of solid gas reactions at the level reaching the atomic scale. In the present paper, we focus on a combination of atomic resolution STEM/EDX, which visualizes the reaction zone, and near ambient pressure (NAP) XPS, which collects information for a surface layer of variable thickness under reaction conditions. We compare the behavior of two affined topological insulators, Bi2Te3 and Sb2Te3. We used a simple reaction with molecular oxygen occurring at 298 K, which is of practical importance to avoid material degradation. Despite certain limitations, a combination of in situ XPS and ex situ cross-sectional STEM/EDX allowed us to obtain a self-consistent picture of the solid gas reaction mechanism for oxidation of Sb2Te3 and Bi2Te3 crystals, which includes component redistribution between the oxide and the subsurface layer and Te segregation with formation of a thin ordered layer at the interface. The process is multistep in case of both compounds. At the very beginning of the oxidation process the reactivity is determined by the energy benefit of the corresponding element oxygen bond formation. Further in the oxidation process, the behavior of these two compounds becomes similar and features component redistribution between the oxide and the subsurface layer.

Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by breaking time-reversal symmetry and to enable novel topological phases. Epitaxial (Bi$_{1-x}$Mn$_{x}$)$_{2}$Se$_{3}$ is a prototypical magnetic topological insulator with a pronounced surface band gap of $\sim100$ meV. We show that this gap is neither due to ferromagnetic order in the bulk or at the surface nor to the local magnetic moment of the Mn, making the system unsuitable for realizing the novel phases. We further show that Mn doping does not affect the inverted bulk band gap and the system remains topologically nontrivial. We suggest that strong resonant scattering processes cause the gap at the Dirac point and support this by the observation of in-gap states using resonant photoemission. Our findings establish a novel mechanism for gap opening in topological surface states which challenges the currently known conditions for topological protection., 26 pages, 7 figures

Using high-resolution angle-resolved photoemission, we observe a strong spin-dependent renormalization and lifetime broadening of the quasiparticle excitations in the electronic band structure of Ni(111) in an energy window of $\sim$0.3 eV below the Fermi level. We derive a quantitative result for the spin-dependent lifetime broadening by comparing the scattering rates of majority and minority $d$ states, and further show that spin-dependent electron correlations are instead negligible for $sp$ states. From our analysis we experimentally determine the effective on-site Coulomb interaction $U$ caused by Stoner-like interband transitions between majority and minority $d$ states. The present results unambiguously demonstrate the remarkable impact of spin-dependent electron correlation effects originating from single-particle excitations in a prototypical 3$d$ transition metal, paving the way for further refinement of current many-body theoretical approaches., 5 pages, 4 figures, submitted on 24.05.2018

The behavior of ternary mixed crystals or solid solutions and its correlation with the properties of their binary constituents is of fundamental interest. Due to their unique potential for application in future information technology, mixed crystals of topological insulators with the spin-locked, gapless states on their surfaces attract huge attention of physicists, chemists and material scientists. (Bi1−xSbx)2Te3 solid solutions are among the best candidates for spintronic applications since the bulk carrier concentration can be tuned by varying x to obtain truly bulk-insulating samples, where the topological surface states largely contribute to the transport and the realization of the surface quantum Hall effect. As this ternary compound will be evidently used in the form of thin-film devices its chemical stability is an important practical issue. Based on the atomic resolution HAADF-TEM and EDX data together with the XPS results obtained both ex situ and in situ, we propose an atomistic picture of the mixed crystal reactivity compared to that of its binary constituents. We find that the surface reactivity is determined by the probability of oxygen attack on the Te–Sb bonds, which is directly proportional to the number of Te atoms bonded to at least one Sb atom. The oxidation mechanism includes formation of an amorphous antimony oxide at the very surface due to Sb diffusion from the first two quintuple layers, electron tunneling from the Fermi level of the crystal to oxygen, oxygen ion diffusion to the crystal, and finally, slow Te oxidation to the +4 oxidation state. The oxide layer thickness is limited by the electron transport, and the overall process resembles the Cabrera–Mott mechanism in metals. These observations are critical not only for current understanding of the chemical reactivity of complex crystals, but also to improve the performance of future spintronic devices based on topological materials.

Negative longitudinal magnetoresistance (NLMR) is shown to occur in topological materials in the extreme quantum limit, when a magnetic field is applied parallel to the excitation current. We perform pulsed and DC field measurements on Pb1-xSnxSe epilayers where the topological state can be chemically tuned. The NLMR is observed in the topological state, but is suppressed and becomes positive when the system becomes trivial. In a topological material, the lowest N=0 conduction Landau level disperses down in energy as a function of increasing magnetic field, while the N=0 valence Landau level disperses upwards. This anomalous behavior is shown to be responsible for the observed NLMR. Our work provides an explanation of the outstanding question of NLMR in topological insulators and establishes this effect as a possible hallmark of bulk conduction in topological matter., Comment: Accepted in Physical Review Letters

Helically spin-polarized Dirac fermions (HSDF) in protected topological surface states (TSS) are of high interest as a new state of quantum matter. In three-dimensional (3D) materials with TSS, electronic bulk states often mask the transport properties of HSDF. Recently, the high-field Hall resistance and low-field magnetoresistance indicate that the TSS may coexist with a layered two-dimensional electronic system (2DES). Here, we demonstrate quantum oscillations of the Hall resistance at temperatures up to 50 K in nominally undoped bulk Bi2Se3 with a high electron density n of about 2·1019 cm−3. From the angular and temperature dependence of the Hall resistance and the Shubnikov-de Haas oscillations we identify 3D and 2D contributions to transport. Angular resolved photoemission spectroscopy proves the existence of TSS. We present a model for Bi2Se3 and suggest that the coexistence of TSS and 2D layered transport stabilizes the quantum oscillations of the Hall resistance.

Quantum-phase transitions between trivial insulators and topological insulators differ from ordinary metal-insulator transitions in that they arise from the inversion of the bulk band structure due to strong spin–orbit coupling. Such topological phase transitions are unique in nature as they lead to the emergence of topological surface states which are characterized by a peculiar spin texture that is believed to play a central role in the generation and manipulation of dissipationless surface spin currents on ultrafast timescales. Here, we provide a generalized G W +Boltzmann approach for the description of ultrafast dynamics in topological insulators driven by electron–electron and electron–phonon scatterings. Taking the prototypical insulator Bi 2 Te 3 as an example, we test the robustness of our approach by comparing the theoretical prediction to results of time- and angle-resolved photoemission experiments. From this comparison, we are able to demonstrate the crucial role of the excited spin texture in the subpicosecond relaxation of transient electrons, as well as to accurately obtain the magnitude and strength of electron–electron and electron–phonon couplings. Our approach could be used as a generalized theory for three-dimensional topological insulators in the bulk-conducting transport regime, paving the way for the realization of a unified theory of ultrafast dynamics in topological materials.

The existence of ferromagnetic ordering in graphene on cobalt is demonstrated by means of resonant magnetic reflection spectroscopy exploiting the transversal magneto-optical Kerr-effect (T-MOKE). Using linearly polarized synchrotron radiation in the soft x-ray range with energies spanning the carbon 1s edge, the π- and σ- bonds of graphene were excited individually, showing that magnetism in graphene is carried by the π – orbitals. Magnetic signals were detected over a wide energy range from 257 – 340 eV with a T-MOKE peak value of 1.1 % at the π – resonance energy near 285 eV. By comparison with corresponding spectra measured at the 2p edges of the Co substrate, a large induced magnetic moment of 0.14 μB was derived for graphene. Individual hysteresis curves monitored at the Co 2p and C 1s edges show that the carbon magnetism is induced by the Co substrate.

Using time-, spin- and angle-resolved photoemission, we investigate the ultrafast spin dynamics of hot electrons on the surface of the topological insulator Bi$_2$Te$_3$ following optical excitation by fs-infrared pulses. We observe two surface-resonance states above the Fermi level coexisting with a transient population of Dirac fermions that relax in about $\sim$2 ps. One state is located below $\sim$0.4 eV just above the bulk continuum, the other one at $\sim$0.8 eV inside a projected bulk band gap. At the onset of the excitation, both states exhibit a reversed spin texture with respect to that of the transient Dirac bands, in agreement with our one-step photoemission calculations. Our data reveal that the high-energy state undergoes spin relaxation within $\sim$0.5 ps, a process that triggers the subsequent spin dynamics of both the Dirac cone and the low-energy state, which behave as two dynamically-locked electron populations. We discuss the origin of this behavior by comparing the relaxation times observed for electrons with opposite spins to the ones obtained from a microscopic Boltzmann model of ultrafast band cooling introduced into the photoemission calculations. Our results demonstrate that the nonequilibrium surface dynamics is governed by electron-electron rather than electron-phonon scattering, with a characteristic time scale unambiguously determined by the complex spin texture of excited states above the Fermi level. Our findings reveal the critical importance of detecting momentum and energy-resolved spin textures with fs resolution to fully understand the sub-ps dynamics of transient electrons on the surface of topological insulators., 10 pages, 5 figures

We reinvestigate the putative giant spin splitting at the surface of SrTiO3 reported by Santander-Syro et al. [Nature Mat. 13, 1085 (2014)]. Our spin- and angle-resolved photoemission experiments on fractured (001) oriented surfaces supporting a two-dimensional electron liquid with high carrier density show no detectable spin polarization in the photocurrent. We demonstrate that this result excludes a giant spin splitting while it is consistent with the unconventional Rashba-like splitting seen in band structure calculations that reproduce the experimentally observed ladder of quantum confined subbands. Postprint

We perform ultrahigh-resolution angle-resolved photoemission experiments at a temperature $T=0.8$ K on the type-II Weyl semimetal candidate ${\mathrm{WTe}}_{2}$. We find a surface Fermi arc connecting the bulk electron and hole pockets on the (001) surface. Our results show that the surface Fermi arc connectivity to the bulk bands is strongly mediated by distinct surface resonances dispersing near the border of the surface-projected bulk band gap. By comparing the experimental results to first-principles calculations, we argue that the coupling to these surface resonances, which are topologically trivial, is compatible with the classification of ${\mathrm{WTe}}_{2}$ as a type-II Weyl semimetal hosting topological Fermi arcs. We further support our conclusion by a systematic characterization of the bulk and surface character of the different bands and discuss the similarity of our findings to the case of topological insulators.

Surfaces and interfaces offer new possibilities for tailoring the many-body interactions that dominate the electrical and thermal properties of transition metal oxides1–4. Here, we use the prototypical two-dimensional electron liquid (2DEL) at the SrTiO3(001) surface5–7 to reveal a remarkably complex evolution of electron–phonon coupling with the tunable carrier density of this system. At low density, where superconductivity is found in the analogous 2DEL at the LaAlO3/SrTiO3 interface8–13, our angle-resolved photoemission data show replica bands separated by 100 meV from the main bands. This is a hallmark of a coherent polaronic liquid and implies long-range coupling to a single longitudinal optical phonon branch. In the overdoped regime the preferential coupling to this branch decreases and the 2DEL undergoes a crossover to a more conventional metallic state with weaker short-range electron–phonon interaction. These results place constraints on the theoretical description of superconductivity and allow a unified understanding of the transport properties in SrTiO3-based 2DELs. Postprint

Photoelectron spectroscopy in combination with piezoforce microscopy reveals that the helicity of Rashba bands is coupled to the nonvolatile ferroelectric polarization of GeTe(111). A novel surface Rashba band is found and fingerprints of a bulk Rashba band are identified by comparison with density functional theory calculations.

Rozbíjení inverzní symetrie ve fereeleRashba efekt; Fotoemisse; DFTktrickém polovodiči způsobuje děleni stavů, tzv Rashba efekt. V tomto článku ukazujeme kompletně mapování spinové polarizace těchto Rashba stavů za pomoci spinovo rozlišené fotoemisse. The breaking of bulk inversion symmetry in ferroelectric semiconductors causes a Rashba-type spin splitting of electronic bulk bands. This is shown by a comprehensive mapping of the spin polarization of the electronic bands in ferroelectric α- GeTe(111) films using a time-of-flight momentum microscope equipped with an imaging spin filter that enables a simultaneous measurement of more than 10 000 data points. The experiment reveals an opposite spin helicity of the inner and outer Rashba bands with a different spin polarization in agreement with theoretical predictions, confirming a complex spin texture of bulk Rashba states. The outer band has about twice larger spin polarization than the inner one, giving evidence of a spin-orbit effect being related to the orbital composition of the band states. The switchable inner electric field of GeTe implies new functionalities for spintronic devices.

The interface of graphene with ferromagnets is highly relevant for spintronics, because graphene on Co(0001) shows a largely intact Dirac cone and strong hybridization with Co $3d$ states breaking the sublattice symmetry that had been considered mutually exclusive. Here we show by spin- and angle-resolved photoemission that the Dirac cone and Dirac point are also highly spin polarized $(\ensuremath{\sim}\ensuremath{-}25%)$, which reinforces the puzzling issue of a strong graphene-substrate interaction. The problem is solved by our ab initio calculations which show that (i) the upper and lower halves of the Dirac cone belong to different sublattices and (ii) one half is spin polarized by spin-dependent hybridization because it is situated at the edge of a minority-spin band gap of the Co substrate.

We present an angle-resolved photoemission study of a ternary phase change material, namely Ge2Sb2Te5, epitaxially grown on Si(111) in the metastable cubic phase. The observed upper bulk valence band shows a minimum at Gamma-bar being 0.3 eV below the Fermi level E_F and a circular Fermi contour around Gamma-bar with a dispersing diameter of 0.27-0.36 Anstroms^-1. This is in agreement with density functional theory calculations of the Petrov stacking sequence in the cubic phase which exhibits a topological surface state. The topologically trivial cubic KH stacking shows a valence band maximum at Gamma in line with all previous calculations of the hexagonal stable phase exhibiting the valence band maximum at Gamma for a trivial Z_2 topological invariant nu_0 and away from Gamma for non-trivial nu_0. Scanning tunneling spectroscopy exhibits a band gap of 0.4 eV around E_F.

The spin-orbit splitting of grapheneπ states can be strongly enhanced by external influences such as corrugation or proximity to heavier atoms. Here we investigate experimentally and theoretically whether such strong enhancement is possible for graphene on SiC(0001). By spinand angle-resolved photoemission we found for two independently grown samples no resolvable spin-orbit splitting with an upper limit of our analysis of 20 meV. Our ab initio calculations predict a low spin-orbit splitting of 0.05 meV with small anisotropy but a local tenfold enhancement where hybridization with SiC substrate bands occurs.

The appearance of massless Dirac fermions in graphene requires two equivalent carbon sublattices of trigonal shape. While the generation of an effective mass and a band gap at the Dirac point remains an unresolved problem for freestanding extended graphene, it is well established by breaking translational symmetry by confinement and by breaking sublattice symmetry by interaction with a substrate. One of the strongest sublattice symmetry breaking interactions with predicted and measured band gaps ranging from 400 meV to more than 3 eV has been attributed to the interfaces of graphene with Ni and Co, which are also promising spin filter interfaces. Here, we apply angle resolved photoemission to epitaxial graphene on Ni 111 and Co 0001 to show the presence of intact Dirac cones 2.8 eV below the Fermi level. Our results challenge the common belief that the breaking of sublattice symmetry by a substrate and the opening of the band gap at the Dirac energy are in a straightforward relation. A simple effective model of a biased bilayer structure composed of graphene and a sublattice symmetry broken layer, corroborated by densityfunctional theory calculations, demonstrates the general validity of our conclusions

We have investigated the spin-dependent quasiparticle lifetimes and the strength of electron correlation effects in the ferromagnetic 3$d$ transition metals Fe, Co, and Ni by means of spin- and angle-resolved photoemission spectroscopy. The experimental data are accompanied by state-of-the-art many-body calculations within the dynamical mean-field theory and the three-body scattering approximation, including fully relativistic calculations of the photoemission process within the one-step model. Our quantitative analysis reveals that inclusion of local many-body Coulomb interactions are of ultimate importance for a realistic description of correlation effects in ferromagnetic 3$d$ transition metals. However, we found that more sophisticated many-body calculations with larger modifications in the case of Fe and Co are still needed to improve the quantitative agreement between experiment and theory. In general, it turned out that not only the dispersion behavior of energetic structures should be affected by nonlocal correlations but also the line widths of most of the photoemission peaks are underestimated by the current theoretical approaches. The increasing values of the on-site Coulomb interaction parameter $U$ and the band narrowing of majority spin states obtained when moving from Fe to Ni indicate that the effect of nonlocal correlations becomes weaker with increasing atomic number, whereas correlation effects tend to be stronger.

We report on a quantitative investigation of the spin-dependent quasiparticle lifetimes and electron correlation effects in ferromagnetic hcp Co(0001) by means of spin- and angle-resolved photoemission spectroscopies. The experimental spectra are compared in detail to state-of-the-art many-body calculations within the dynamical mean-field theory and the three-body scattering approximation, including a full calculation of the one-step photoemission process. From this comparison we conclude that although strong local many-body Coulomb interactions are of major importance for the qualitative description of correlation effects in Co, more sophisticated many-body calculations are needed in order to improve the quantitative agreement between theory and experiment, in particular, concerning the linewidths. The quality of the overall agreement obtained for Co indicates that the effect of nonlocal correlations becomes weaker with increasing atomic number.

Epitaxial growth of topological insulator bismuth telluride by molecular beam epitaxy onto BaF2 (111) substrates is studied using Bi2Te3 and Te as source materials. By changing the beam flux composition, different stoichiometric phases are obtained, resulting in high quality Bi2Te3 and Bi1Te1 epilayers as shown by Raman spectroscopy and high-resolution X-ray diffraction. From X-ray reciprocal space mapping, the residual strain, as well as size of coherently scattering domains are deduced. The Raman modes for the two different phases are identified and the dielectric functions derived from spectroscopic ellipsometry investigations. Angular resolved photoemission reveals topologically protected surface states of the Bi2Te3 epilayers. Thus, BaF2 is a perfectly suited substrate material for the bismuth telluride compounds.