Author: "Jean-Marie Bluet" / Language: english - Searchworks@Jio Institute Digital Library Search Results

Your search keyword '"Jean-Marie Bluet"' showing total 42 results

Start Over Author "Jean-Marie Bluet" Language english

42 results on '"Jean-Marie Bluet"'

1. Efficient Optimization of High‐Quality Epitaxial Lithium Niobate Thin Films by Chemical Beam Vapor Deposition: Impact of Cationic Stoichiometry

Author: Anna L. Pellegrino, Estelle Wagner, Francesca Lo Presti, William Maudez, Simon Kolb, Rashmi Rani, Antoine Bernard, Stephan Guy, Alban Gassenq, Marina Raevskaia, Christian Grillet, Rahma Moalla, Claude Botella, Romain Bachelet, Bruno Masenelli, Jean‐Marie Bluet, Sebastien Cueff, Patrick Chapon, Giacomo Benvenuti, and Graziella Malandrino
Subjects: chemical beam epitaxy, combinatorial, epitaxial films, lithium niobate, optical properties, structural properties, Physics, QC1-999, Technology
Abstract: Abstract Lithium niobate is a material of special interest for its challenging functional properties, which can suit various applications. However, high quality 200‐mm LixNb1‐xO3 thin film grown on sapphire substrate have never been reported so far which limits these potential applications. This paper reports the efficient optimization of high quality LiNbO3 thin film deposition on sapphire (001) substrate through chemical beam vapor deposition in a combinatorial configuration. With this technique, flow ratio of Li/Nb can be tuned from ≈0.25 to ≈2.45 on a single wafer. Various complementary characterizations (by means of diffraction, microscopy and spectroscopy techniques) have been performed at different areas of the film (different cationic ratios) in order to investigate the impact of the cationic stoichiometry deviation on the film properties. Close to cationic stoichiometry (LiNbO3), the epitaxial films are of high quality (single phase in spite of two in‐plane domains, low mosaicity of 0.04°, low surface roughness, refractive index and band gap close to bulk values). Deviating from the stoichiometry conditions, secondary phases are detected (LiNb3O8 for Nb‐rich flow ratios, and Li3NbO4 with partial amorphization for Li‐rich flow ratios). LiNbO3 films are of high interest for various key applications in data communications among others.
Published: 2023
Full Text: View/download PDF

2. Heat dissipation in partially perforated phononic nano-membranes with periodicities below 100 nm

Author: Antonin M. Massoud, Valeria Lacatena, Maciej Haras, Emmanuel Dubois, Stéphane Monfray, Jean-Marie Bluet, Pierre-Olivier Chapuis, and Jean-François Robillard
Subjects: Biotechnology, TP248.13-248.65, Physics, QC1-999
Abstract: Understanding how thermal-phonon paths can be shaped is key for controlling heat dissipation at the nanoscale. Thermophononic crystals are periodic porous nanostructures with thermal conductivity deviating from effective medium theory, which is possible if the characteristic sizes are of the order of phonon mean free paths and/or if phonons are forced to flow in privileged directions. We investigate suspended silicon nanomembranes with a periodic array of partially perforated holes of original paraboloid shape, with all characteristic lengths below 100 nm. Results from scanning thermal microscopy, a thermal sensing technique derived from atomic force microscopy, indicate that partial perforation of the membranes impacts heat conduction moderately, with the holey crystals showing a thermal conductivity reduction by a factor 6 in comparison to the bulk and a factor 2.5 in comparison to the non-perforated membrane. The impact of the phononic shapes is analyzed in light of a complementary Monte Carlo ray-tracing estimate of the effective phonon mean free paths that include multiple phonon reflection and highlights phonon backscattering.
Published: 2022
Full Text: View/download PDF

3. Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

Author: Stefania Castelletto, Abdul Salam Al Atem, Faraz Ahmed Inam, Hans Jürgen von Bardeleben, Sophie Hameau, Ahmed Fahad Almutairi, Gérard Guillot, Shin-ichiro Sato, Alberto Boretti, and Jean Marie Bluet
Subjects: color centers, micropillars, proton irradiation, quantum sensing, silicon carbide, vacancy, Technology, Chemical technology, TP1-1185, Science, Physics, QC1-999
Abstract: We report the enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (VSi), silicon and carbon divacancies (VCVSi), and nitrogen vacancies (NCVSi) in an n-type 4H-SiC array of micropillars. The micropillars have a length of ca. 4.5 μm and a diameter of ca. 740 nm, and were implanted with H+ ions to produce an ensemble of color centers at a depth of approximately 2 μm. The samples were in part annealed at different temperatures (750 and 900 °C) to selectively produce distinct color centers. For all these color centers we saw an enhancement of the photostable fluorescence emission of at least a factor of 6 using micro-photoluminescence systems. Using custom confocal microscopy setups, we characterized the emission of VSi measuring an enhancement by up to a factor of 20, and of NCVSi with an enhancement up to a factor of 7. The experimental results are supported by finite element method simulations. Our study provides the pathway for device design and fabrication with an integrated ultra-bright ensemble of VSi and NCVSi for in vivo imaging and sensing in the infrared.
Published: 2019
Full Text: View/download PDF

4. Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy

Author: Maroun Dagher, Camille Sonneville, Georges Brémond, Dominique Planson, Eric Frayssinet, Yvon Cordier, Helge Haas, Mohammed Reda Iretki, Julien Buckley, Vishwajeet Maurya, Matthew Charles, Jean-Marie Bluet, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Ampère, Département Energie Electrique (EE), Ampère (AMPERE), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), INL - Matériaux Fonctionnels et Nanostructures (INL - MFN), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and GaNeX Labex
Subjects: [PHYS]Physics [physics], Materials Chemistry, Surfaces and Interfaces, Electrical and Electronic Engineering, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials
Abstract: International audience; Schottky barrier diodes on GaN on GaN substrates are fabricated for the purposeof material and technology characterization. The epitaxial layers are grown byMOCVD. I–V measurements as a function of the temperature in the range80–480 K show ideality factor (n) and barrier height (ϕB) variations not following athermionic (TE) model. Consequently, barrier height fluctuations are considered.In the temperature range 280–480 K, an average barrier height of 1.31 eV with arelatively large standard deviation (σ) of 0.15 eV is extracted using this model. Then(T ) variation is also analyzed in order to extract the field sensibility of 1) themean barrier height variation (ρ2 = -0.1) and 2) the barrier height standarddeviation (ρ3 = -15mV). The corrected Richardson plot usingϕB and σ values islinear and gives a Richardson constant of 31.5 A cm² K² close to the theoreticalvalue of 26.4 A cm² K². For a deeper understanding of ϕB fluctuation origins,micro-Raman mapping of the epitaxial layers and deep-level transient spectroscopy(DLTS) are used. μ-RS mappings show compressive strain for diodeshaving suffered electrical breakdown. DLTS analysis shows the presence of ninelevels whose signatures are extracted and nature discussed.
Published: 2023
Full Text: View/download PDF

5. Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

Author: Hans Jürgen von Bardeleben, Abdul Salam Al Atem, Faraz A. Inam, Stefania Castelletto, Sophie Hameau, Jean-Marie Bluet, Shin-ichiro Sato, Alberto Boretti, Ahmed Fahad Almutairi, Gérard Guillot, School of Engineering, RMIT University, Melbourne, Victoria 3001, Australia, Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon, Laboratoire Pierre Aigrain (LPA), Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris), and Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Fabrication, Silicon, Infrared, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, vacancy, lcsh:Chemical technology, lcsh:Technology, 01 natural sciences, Full Research Paper, Ion, chemistry.chemical_compound, color centers, silicon carbide, Vacancy defect, 0103 physical sciences, Silicon carbide, Nanotechnology, lcsh:TP1-1185, General Materials Science, Electrical and Electronic Engineering, quantum sensing, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, lcsh:Science, 010306 general physics, micropillars, lcsh:T, business.industry, Near-infrared spectroscopy, proton irradiation, 021001 nanoscience & nanotechnology, Fluorescence, lcsh:QC1-999, Nanoscience, chemistry, Optoelectronics, lcsh:Q, 0210 nano-technology, business, lcsh:Physics
Abstract: We report the enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (VSi), silicon and carbon divacancies (VCVSi), and nitrogen vacancies (NCVSi) in an n-type 4H-SiC array of micropillars. The micropillars have a length of ca. 4.5 μm and a diameter of ca. 740 nm, and were implanted with H+ ions to produce an ensemble of color centers at a depth of approximately 2 μm. The samples were in part annealed at different temperatures (750 and 900 °C) to selectively produce distinct color centers. For all these color centers we saw an enhancement of the photostable fluorescence emission of at least a factor of 6 using micro-photoluminescence systems. Using custom confocal microscopy setups, we characterized the emission of VSi measuring an enhancement by up to a factor of 20, and of NCVSi with an enhancement up to a factor of 7. The experimental results are supported by finite element method simulations. Our study provides the pathway for device design and fabrication with an integrated ultra-bright ensemble of VSi and NCVSi for in vivo imaging and sensing in the infrared.
Published: 2019
Full Text: View/download PDF

6. Thermal conductivity of irradiated porous silicon down to the oxide limit investigated by Raman thermometry and scanning thermal microscopy

Author: Jean-Marie Bluet, A. M. Massoud, Pierre-Olivier Chapuis, Bruno Canut, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre d'Energétique et de Thermique de Lyon (CETHIL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon
Subjects: 010302 applied physics, Materials science, Silicon, Scanning electron microscope, Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, Scanning thermal microscopy, 021001 nanoscience & nanotechnology, Porous silicon, 01 natural sciences, Amorphous solid, Thermal conductivity, chemistry, Transmission electron microscopy, 0103 physical sciences, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], 0210 nano-technology, Porosity
Abstract: International audience; Irradiating porous silicon is expected to reduce thermal conductivity without altering the porous structure and can be studied by optical techniques provided optical properties can be established reliably. Toward this end, meso-porous silicon (PSi), with a porosity of 56%, was prepared from p + Si wafer (0.01-0.02 .cm-1 resistivity) and was partially amorphized by irradiation in the electronic regime with 129 Xe ions at two different energies (29 MeV and 91 MeV) and five fluences ranging from 10 12 cm-2 to 3.10 13 cm-2. The PSi structure is monitored by scanning electron microscopy. High-resolution transmission electron microscopy shows that the amorphous phase is homogeneous in volume and that there is no formation of amorphous-crystalline core-shell structures. An agreement is found between the thermal conductivity results obtained with micro-Raman thermometry, which is an optical contactless technique heating the sample in the depth, and scanning thermal microscopy, which is an electrical technique heating the sample by contact at the sample surface. A linear relation is established between the effective thermal conductivity and the amorphous fraction, predicting the thermal conductivity of fully-amorphous porous Si below 1 W.m-1 .K-1. The obtained values are comparable to that of SiO2, reduced by a factor 6 in comparison to non-irradiated porous samples (~6.5 W.m-1 .K-1) and smaller than bulk silicon by more than two orders of magnitude.
Published: 2020
Full Text: View/download PDF

7. Fluorescent Silicon Carbide Nanoparticles

Author: O. de Vries, Mitchell, Shinichiro, Sato, Takeshi, Ohshima, C. Gibson, Brant, Jean-Marie, Bluet, Castelletto, Stefania, C. Johnson, Brett, and Reineck, Philipp
Abstract: Silicon carbide (SiC) is an indirect wide band gap semiconductor that is utilized in many industrial applications due to its extreme physical properties. SiC nanoparticles (NPs) exhibit a versatile surface chemistry, fluoresce from the ultraviolet to the near-infrared spectral ranges, and their sizes can be tuned from one to hundreds of nanometers. Yet, fluorescent SiC NPs have received far less attention by the scientific community. This review summarizes the state-of-the-art in fluorescent SiC NPs. Nanoparticle fabrication methods, characterization techniques, nanoparticle surface chemistry, and SiC NPs fluorescence properties are assessed in detail. Atomic defects and impurities in the SiC crystal lattice (so-called color centers), surface-induced fluorescence, quantum confinement, and band-edge fluorescence are identified as the main sources of fluorescence in SiC NPs. While many color centers are reported in bulk SiC, only few are identified in SiC NPs and interface-related defects remain poorly understood, creating enormous potential for scientific discovery. Finally, an overview of demonstrated and emerging potential applications of SiC NPs in the areas of bioimaging and quantum sensing is provided.
Published: 2021

8. Combined EPR and photoluminescence study of electron and proton irradiated 3C-SiC

Author: Jeremie Lefevre, Bruno Canut, Victor Bratus, Jean-Marie Bluet, Gérard Guillot, Abdul Salam Al Atem, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Department of Optics and Spectroscopy of Semiconductor and Dielectric Materials (DOS), V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine (NASU)-National Academy of Sciences of Ukraine (NASU), Laboratoire des Solides Irradiés (LSI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-École polytechnique (X), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Photoluminescence, Materials science, Proton, Mechanical Engineering, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 7. Clean energy, 01 natural sciences, Crystallographic defect, Molecular physics, Spectral line, law.invention, [SPI.MAT]Engineering Sciences [physics]/Materials, Mechanics of Materials, law, Vacancy defect, 0103 physical sciences, Electron beam processing, General Materials Science, Dislocation, 010306 general physics, 0210 nano-technology, Electron paramagnetic resonance
Abstract: International audience; In past few years, point defects in silicon carbide (SiC) have been identified as promising for applications in quantum technologies [1]. A variety of point defects in hexagonal SiC [2], including VSi and VSiVC have been optically isolated and used as single defect-based spin qubits with long coherence time [3-5]. All of this, proves that these point defects allow the SiC to be a very favorable candidate for quantum applications especially, solid state quantum bits (Qubits) and single photon source (SPS). Most of these studies were carried out on the hexagonal polytypes 4H-SiC and 6H-SiC, although the 3C-SiC polytype presents the unique advantage of integration possibility on standard Si wafer. This is due to the amount of defects (dislocation mainly) in the 3C-SiC heteroepitaxy on Si which are detrimental for long coherence time considering Qubit application. Consequently, the goal of the present study is the investigation of point defects formation after implantation by proton H + (300 keV) and irradiation by electron e-(0.8 and 2 MeV) in 3C-SiC (respectively 3C-SiC and 3C-SiC) for SPS application purpose. Toward this end, we have combined two characterization techniques, the photoluminescence (PL) and the electron paramagnetic resonance (EPR). PL (12K) and EPR (70-300K) measurements will be presented in order to analyze precisely the signatures of point defects generated after these two types of irradiations. The effects of the thermal annealing (500-1000°C) were also investigated. PL spectra both for 3C-SiC and 3C-SiC are presented in figure 1 for the annealing temperatures giving the highest PL signal (1000°C for 3C-SiC and 750°C for 3C-SiC). We notice first that the whole PL signal is higher for 3C-SiC. In this case the spectrum is dominated by the DI defect line (possibly related to antisite pair [6]) and the E line (attributed to Si vacancy [7, 8]) while in electron irradiated sample the  line (attributed to CSiVC in a 3C-SiC nanocrystal [8]) dominates as previously reported [9]. A strong zero phonon line at 1.6 eV also appears for 3C-SiC with its phonon replica. This line was previously observed also for neutron and proton irradiated 3C-SiC and at present is of unknown origin [10, 11]. In the infrared range, the proton implantation is also more efficient to produce the VcVsi PL line with an optimum luminescence for 750°C annealing. All together, these results show that, even if the energy transferred to the host atoms during electron irradiation is quite above the displacement thresholds for both C and Si, defects involving Si vacancy are more pronounced in 3C-SiC samples. EPR spectra for 3C-SiC for isochronal annealing (30 min.) at different temperatures are presented in figure 2. The spin-three-half negatively-charged Si vacancy (the T1 center) is a dominant defect in 3C-SiC epitaxial layers corresponding to the E line in the PL spectra. Similar to neutron irradiated 3C-SiC crystals the as-implanted not annealed 3C-SiC samples demonstrate an isotropic spectrum with the g-value of 2.0029 and a superhyperfine doublet with a splitting typical to the T1 center
Published: 2018
Full Text: View/download PDF

9. Native-oxide limited cross-plane thermal transport in suspended silicon membranes revealed by scanning thermal microscopy

Author: Pierre-Olivier Chapuis, Jean-Marie Bluet, A.M. Massoud, Valeria Lacatena, Maciej Haras, Jean-François Robillard, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)
Subjects: Scanning thermal microscopy, Materials science, Physics and Astronomy (miscellaneous), Silicon, Thin films, Oxide, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Conductivity, 01 natural sciences, chemistry.chemical_compound, Thermal conductivity, 0103 physical sciences, Thermodynamic states and processes, Composite material, Thermal analysis, Thermal transport, 010302 applied physics, Oxides, 021001 nanoscience & nanotechnology, Thermal conduction, Temperature metrology, Membrane, chemistry, Chemical elements, Contact impedance, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], Nanoparticles, 0210 nano-technology
Abstract: International audience; By thermally characterizing nanometer-thin suspended silicon membranes with various micrometric lengths in ambient conditions, we determine simultaneously the spatial resolution of our Wollaston-probe scanning thermal microscopy experiment, which probes an area of (285 nm)2, and the effective thermal conductivity of the membranes of 40 W.m-1.K-1. This value is smaller thanthe in-plane thermal conductivity measured using other techniques in vacuum (60 W.m-1.K-1), revealing that both cross-plane and in-plane heat conduction are strongly affected by the native oxide in ambient conditions. This work also underlines that high-thermal conductivity samples can be characterized by scanning thermal microscopy when micro-patterned.
Published: 2017
Full Text: View/download PDF

10. Calibration methodologies for scanning thermal microscopy

Author: Jean-Marie Bluet, Eloïse Guen, David Renahy, Mouhannad Massoud, Severine Gomes, Pierre-Olivier Chapuis, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and CETHIL, Laboratoire
Subjects: 010302 applied physics, Microprobe, Materials science, business.industry, Resolution (electron density), Nanoprobe, Nanotechnology, 02 engineering and technology, Scanning thermal microscopy, Surface finish, 021001 nanoscience & nanotechnology, 01 natural sciences, Thermal conductivity, 0103 physical sciences, Heat transfer, Calibration, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], Optoelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, [SPI.MECA.THER] Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph]
Abstract: This work analyses the heat transfer between various scanning thermal microscopy (SThM) probes and samples. In order to perform quantitative measurements with SThM techniques, we have developed well-established and reproducible calibration methodologies. We present here two approaches of the SThM measurement: one to measure thermal conductivity of solid materials with a Wollaston SThM microprobe and a second one to evaluate phase transition temperatures of polymeric materials with a silicon low-doped nanoprobe. Based on the comparison of experimental data and modeling results, we have estimated the local resolution of the microprobe to be associated to a radius of 300 nm. Concerning the nanoprobe, we have demonstrated the strong dependence of measurement on sample topography and roughness.
Published: 2016

11. Intense visible emission from ZnO/PAAX (X = H or Na) nanocomposite synthesized via a simple and scalable sol-gel method

Author: Bruno Masenelli, P. Gautier, Karine Masenelli-Varlot, A. Valette, Jean-Marie Bluet, Thibaut Cornier, L. Omar, Yao Zhu, Stéphane Daniele, Aleksandra Apostoluk, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), IRCELYON-C'Durable (CDURABLE), Institut de recherches sur la catalyse et l'environnement de Lyon (IRCELYON), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Matériaux, ingénierie et science [Villeurbanne] (MATEIS), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Consortium Lyon Saint-Etienne de Microscopie (CLYM), École normale supérieure de Lyon (ENS de Lyon)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Jean Monnet - Saint-Étienne (UJM), Institut de recherches sur la catalyse et l'environnement de Lyon ( IRCELYON ), Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique ( CNRS ), IRCELYON-Ingéniérie, du matériau au réacteur ( ING ), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique ( CNRS ) -Université Claude Bernard Lyon 1 ( UCBL ), IRCELYON-Chimie durable: du fondamental à l'application ( CDFA ), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), École normale supérieure - Lyon (ENS Lyon)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Jean Monnet [Saint-Étienne] (UJM)
Subjects: Materials science, Photoluminescence, Chalcogenide, Quantum yield, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Article, [SPI.MAT]Engineering Sciences [physics]/Materials, chemistry.chemical_compound, [ CHIM.CATA ] Chemical Sciences/Catalysis, [SPI]Engineering Sciences [physics], Sol-gel, Multidisciplinary, Nanocomposite, Heterojunction, [CHIM.CATA]Chemical Sciences/Catalysis, 021001 nanoscience & nanotechnology, [SDE.ES]Environmental Sciences/Environmental and Society, 0104 chemical sciences, Nanocrystal, chemistry, Chemical engineering, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, Luminescence, [ SDE.ES ] Environmental Sciences/Environmental and Society
Abstract: Intense visible nano-emitters are key objects for many technologies such as single photon source, bio-labels or energy convertors. Chalcogenide nanocrystals have ruled this domain for several decades. However, there is a demand for cheaper and less toxic materials. In this scheme, ZnO nanoparticles have appeared as potential candidates. At the nanoscale, they exhibit crystalline defects which can generate intense visible emission. However, even though photoluminescence quantum yields as high as 60% have been reported, it still remains to get quantum yield of that order of magnitude which remains stable over a long period. In this purpose, we present hybrid ZnO/polyacrylic acid (PAAH) nanocomposites, obtained from the hydrolysis of diethylzinc in presence of PAAH, exhibiting quantum yield systematically larger than 20%. By optimizing the nature and properties of the polymeric acid, the quantum yield is increased up to 70% and remains stable over months. This enhancement is explained by a model based on the hybrid type II heterostructure formed by ZnO/PAAH. The addition of PAAX (X = H or Na) during the hydrolysis of ZnEt2 represents a cost effective method to synthesize scalable amounts of highly luminescent ZnO/PAAX nanocomposites.
Published: 2016
Full Text: View/download PDF

12. Luminescent point defect formation in 3C-SiC by ion implantation

Author: Nicolas Chauvin, Jean-Marie Bluet, Abdul Salam Al Atem, Lydie Ferrier, Bruno Canut, Gérard Guillot, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and INL - Spectroscopies et Nanomatériaux (INL - S&N)
Subjects: Optical fiber, Photoluminescence, Materials science, Annealing (metallurgy), Nanotechnology, 02 engineering and technology, 01 natural sciences, Ion, law.invention, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, Silicon carbide, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Crystallographic defect, Ion implantation, chemistry, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business, Luminescence
Abstract: Optically active point defects in SiC are attracting a growing interest thanks to their prospect of emission in the near-infrared (NIR) spectral region (application in optical fiber communications and for in vivo imaging) and also thanks to the possibility to control optically their spin. Most of the results have been obtained for the hexagonal SiC polytypes. In this work, we focus on the optical properties of point defects in the 3C-SiC polytype after ion implantation. Different ions, fluences and post-implantation annealing were performed to optimize the defect formation. Photoluminescence results show that the optimal conditions for intense D1 defect related PL emission in the 600-850 nm range are high temperature annealing (up to 1200 °C) and a displacement density not exceeding 1020 cm-3 at the projected range. The creation of Ky5 defect at 1.12 eV has also been demonstrated for lower temperature annealing (800 °C). (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Published: 2016
Full Text: View/download PDF

13. Tunable mid IR plasmon in GZO nanocrystals

Author: Jean-Marie Bluet, O. Boisron, M. Hamza, Bruno Canut, Patrice Mélinon, Karine Masenelli-Varlot, Bruno Masenelli, INL - Spectroscopies et Nanomatériaux ( INL - S&N ), Institut des Nanotechnologies de Lyon ( INL ), École Centrale de Lyon ( ECL ), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique ( CNRS ) -Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -École supérieure de Chimie Physique Electronique de Lyon ( CPE ) -Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-École Centrale de Lyon ( ECL ), Université de Lyon, Matériaux, ingénierie et science [Villeurbanne] ( MATEIS ), Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ), Institut Lumière Matière [Villeurbanne] ( ILM ), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique ( CNRS ), Laboratoire de Physique de la Matière Condensée et Nanostructures ( LPMCN ), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Matériaux, ingénierie et science [Villeurbanne] (MATEIS), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Consortium Lyon Saint-Etienne de Microscopie (CLYM), École normale supérieure - Lyon (ENS Lyon)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Jean Monnet [Saint-Étienne] (UJM), Institut Lumière Matière [Villeurbanne] (ILM), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), École Centrale de Lyon (ECL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), École normale supérieure de Lyon (ENS de Lyon)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Jean Monnet - Saint-Étienne (UJM)
Subjects: Materials science, Dopant, business.industry, Doping, Surface plasmon, [ SPI.MAT ] Engineering Sciences [physics]/Materials, Nanoparticle, Physics::Optics, [SPI.MAT]Engineering Sciences [physics]/Materials, Condensed Matter::Materials Science, Nanocrystal, Physics::Atomic and Molecular Clusters, [ SPI ] Engineering Sciences [physics], Optoelectronics, General Materials Science, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic, Surface plasmon resonance, business, Plasmon, Localized surface plasmon
Abstract: International audience; Degenerate metal oxide nanoparticles are promising systems to expand the significant achievements of plasmonics into the infrared (IR) range. Among the possible candidates, Ga-doped ZnO nanocrystals are particularly suited for mid IR, considering their wide range of possible doping level and thus of plasmon tuning. In the present work, we report on the tunable mid IR plasmon induced in degenerate Ga-doped ZnO nanocrystals. The nanocrystals are produced by a plasma expansion and exhibit unprotected surfaces. Tuning the Ga concentration allows tuning the localized surface plasmon resonance. Moreover, the plasmon resonance is characterized by a large damping. By comparing the plasmon of nanocrystals assemblies to that of nanoparticles dispersed in an alumina matrix, we investigate the possible origins of such damping. We demonstrate that it partially results from the self-organization of the naked particles but also from intrinsic inhomogeneity of dopants.
Published: 2015
Full Text: View/download PDF

14. Damage creation in porous silicon irradiated by swift heavy ions

Author: Bruno Canut, Jean-Marie Bluet, Vladimir Lysenko, Mouhannad Massoud, Luc G. Fréchette, Pascal Newby, I. Monnet, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Centre de Recherche en Nanofabrication et Nanocaractérisation (CRN2), Université de Sherbrooke (UdeS), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), and Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Nuclear and High Energy Physics, Materials science, Silicon, Analytical chemistry, chemistry.chemical_element, [CHIM.MATE]Chemical Sciences/Material chemistry, Stopping power, Porous silicon, Ion, symbols.namesake, Crystallography, Damage, chemistry, High energy, symbols, Irradiation, Crystallite, Raman spectroscopy, Porosity, Instrumentation, [CHIM.RADIO]Chemical Sciences/Radiochemistry
Abstract: International audience; Mesoporous silicon (PS) samples were processed by anodising p+ Si wafers in (1:1) HF–ethanol solution. Different current densities were used to obtain three different porosities (41%, 56% and 75%). In all cases the morphology of the PS layer is columnar with a mean crystallite size between 12 nm (75% porosity) and 19 nm (41% porosity). These targets were irradiated at the GANIL accelerator, using different projectiles (130Xe ions of 91 MeV and 29 MeV, 238U ions of 110 MeV and 850 MeV) in order to vary the incident electronic stopping power Se. The fluences ranged between 1011 and 7 × 1013 cm−2. Raman spectroscopy and cross sectional SEM observations evidenced damage creation in the irradiated nanocrystallites, without any degradation of the PS layer morphology at fluences below 3 × 1012 cm−2. For higher doses, the columnar morphology transforms into a spongy-like structure. The damage cross sections, extracted from Raman results, increase with the electronic stopping power and with the sample porosity. At the highest Se (>10 keV nm−1) and the highest porosity (75%), the track diameter coincides with the crystallite diameter, indicating that a single projectile impact induces the crystallite amorphization along the major part of the ion path. These results were interpreted in the framework of the thermal spike model, taking into account the low thermal conductivity of the PS samples in comparison with that of bulk silicon.
Published: 2014
Full Text: View/download PDF

15. Porous silicon irradiated in the electronic regime: Modelling the damage cross-section

Author: Bruno Canut, Jean-Marie Bluet, Massoud, M., Pascal Newby, Vladimir Lysenko, isabelle monnet, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre de Recherche en Nanofabrication et Nanocaractérisation (CRN2), Université de Sherbrooke (UdeS), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), and Inl, Laboratoire INL UMR5270
Subjects: [SPI]Engineering Sciences [physics], [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI] Engineering Sciences [physics], [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract: May 26-30/2014; International audience; no abstract
Published: 2014

16. Swift heavy ion irradiation reduces porous silicon thermal conductivity

Author: Pierre-Olivier Chapuis, Bruno Canut, Luc G. Fréchette, Jean-Marie Bluet, Pascal Newby, Mouhannad Massoud, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Centre de Recherche en Nanofabrication et Nanocaractérisation (CRN2), and Université de Sherbrooke (UdeS)
Subjects: 010302 applied physics, Nuclear and High Energy Physics, Silicon, Nanoporous, business.industry, Doping, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Scanning thermal microscopy, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, Thermal conductivity, Semiconductor, Swift heavy ion, chemistry, 0103 physical sciences, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], Irradiation, 0210 nano-technology, business, Instrumentation
Abstract: While the electrical conductivity of semiconductors can be easily changed over order of magnitudes (8 in silicon) by playing on the doping, the thermal conductivity (TC) control is a challenging issue. Nevertheless, numerous applications require TC control in Si down to 1 W m −1 K −1 . Among them, there are thermal insulation requirements in MEMS, thermal management issues in 3D packaging or TC reduction for thermoelectric applications. Towards this end, the formation of nanoporous Si by electrochemical anodisation is efficient. Nevertheless, in this case the material is too fragile for MEMS application or even to withstand CMOS technological processes. In this work, we show that ion irradiation in the electronic regime is efficient for reducing TC in meso-porous Si (PSi), which is more mechanically robust than the nanoporous PSi. We have studied three different mass to energy ratios ( 238 U at 110 MeV and 130 Xe at 91 MeV and 29 MeV) with fluences ranging from 10 12 cm −2 to 7 × 10 13 cm −2 . The sample properties, after irradiation, have been measured by infrared spectroscopy, Raman spectroscopy and scanning electron microscopy. The TC has been measured using scanning thermal microscopy. Although, bulk Si is insensitive to ion interaction in the electronic regime, we have observed the amorphisation of the PSi resulting in a TC reduction even for the low dose and energy. For the highest irradiation dose a very important reduction factor of four was obtained.
Published: 2014
Full Text: View/download PDF

17. Characterization of the thermal conductivity of insulating thin films by Scanning Thermal Microscopy

Author: Vincent Aimez, Bruno Canut, Pascal Newby, Luc G. Fréchette, Jean-Marie Bluet, Patrice Chantrenne, Severine Gomes, Olivier Marty, Vladimir Lysenko, Konstantinos Termentzidis, Centre de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre de Recherche en Nanofabrication et Nanocaractérisation (CRN2), and Université de Sherbrooke (UdeS)
Subjects: 010302 applied physics, Materials science, Silicon, business.industry, General Engineering, chemistry.chemical_element, 02 engineering and technology, Scanning thermal microscopy, 021001 nanoscience & nanotechnology, 01 natural sciences, Thermal conductivity, Swift heavy ion, chemistry, 0103 physical sciences, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], [PHYS.MECA.THER]Physics [physics]/Mechanics [physics]/Thermics [physics.class-ph], Optoelectronics, Microelectronics, Wafer, Irradiation, Thin film, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract: This paper reports on the abilities of a Scanning Thermal Microscopy (SThM) method to characterize the thermal conductivity of insulating materials and thin films used in microelectronics and microsystems. It gives a review of the previous works on the subject and gives new results allowing showing the performance of a new method proposed for reducing the thermal conductivity of meso-porous silicon by swift heavy ion irradiation. Meso-porous silicon samples were prepared by anodisation of silicon wafers and underwent irradiation by 845MeV ^2^0^8Pb ions, with fluences of 4x10^1^1 and 7x10^1^1cm^-^2. Thermal measurements show that irradiation reduced thermal conductivity by a factor of up to 2.
Published: 2013
Full Text: View/download PDF

18. Fluorescent (Au@SiO2)SiC Nanohybrids: Influence of Gold Nanoparticle Diameter and SiC Nanoparticle Surface Density

Author: Yann Chevolot, Virginie Monnier, Yuriy Zakharko, Eliane Souteyrand, Sergei Alekseev, Ning Sui, Vladimir Lysenko, Jean-Marie Bluet, INL - Chimie et Nanobiotechnologies (INL - C&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Spectroscopies et Nanomatériaux (INL - S&N), and Taras Shevchenko National University of Kyiv
Subjects: Materials science, [SDV.BIO]Life Sciences [q-bio]/Biotechnology, Biophysics, Nanoparticle, Nanotechnology, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, 7. Clean energy, Biochemistry, Colloid, chemistry.chemical_compound, stomatognathic system, Silicon carbide, Absorption (electromagnetic radiation), Plasmon, Quenching (fluorescence), [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, 0104 chemical sciences, chemistry, Chemical engineering, Surface modification, 0210 nano-technology, Dispersion (chemistry), Biotechnology
Abstract: International audience; Gold@silica core–shell nanoparticles were prepared with various gold core diameters (ranging from 20 to 150 nm) and silica thicknesses (ranging from 10 to 30 nm). When the gold diameter is increased, the size dispersion became larger, leading to a broader plasmon band. Then, silicon carbide (SiC) nanoparticles were covalently immobilized onto silica to obtain hybrid (Au@SiO 2) SiC nanoparticles. The absorption properties of these hybrid nanoparticles showed that an excess of SiC nanoparticles in the dispersion can be identified by a strong absorption in the UV region. Compared to SiC reference samples, a blue shift of the fluorescence emission, from 582 to 523 nm, was observed, which was previously attributed to the strong surface modification of SiC when immobilized onto silica. Finally, the influence of several elaboration parameters (gold diameter, silica thickness, SiC concentration) on fluorescence enhancement was investigated. It showed that the highest enhancements were obtained with 10 nm silica thickness, low concentration of SiC nano-particles, and surprisingly, with a 20-nm gold core diameter. This last result could be attributed to the broad plasmon band of big gold colloids. In this case, SiC emission strongly overlapped gold absorption, leading to possible quenching of SiC fluorescence by energy transfer.
Published: 2013
Full Text: View/download PDF

19. Amorphization and reduction of thermal conductivity in porous silicon by irradiation with swift heavy ions

Author: Patrice Chantrenne, Severine Gomes, R. M. Burbelo, Pascal Newby, Mykola Isaiev, Vladimir Lysenko, Bruno Canut, Konstantinos Termentzidis, Jean-Marie Bluet, Luc G. Fréchette, Laboratoire Nanotechnologies Nanosystèmes ( LN2 ), Université de Sherbrooke [Sherbrooke]-École Centrale de Lyon ( ECL ), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon ( CPE ) -Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ) -Université Grenoble Alpes ( UGA ), INL - Spectroscopies et Nanomatériaux ( INL - S&N ), Institut des Nanotechnologies de Lyon ( INL ), École Centrale de Lyon ( ECL ), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon ( CPE ) -Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ) -École Centrale de Lyon ( ECL ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), Centre de Thermique de Lyon ( CETHIL ), Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Taras Shevchenko National University of Kyiv, Laboratoire d'Energétique et de Mécanique Théorique Appliquée ( LEMTA ), Université de Lorraine ( UL ) -Centre National de la Recherche Scientifique ( CNRS ), Matériaux, ingénierie et science [Villeurbanne] ( MATEIS ), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique ( CNRS ) -Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ), NSERC, NanoQuébec, and the Rhône-Alpes region for financial support, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Laboratoire Énergies et Mécanique Théorique et Appliquée (LEMTA ), Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Matériaux, ingénierie et science [Villeurbanne] (MATEIS), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, Materials science, Silicon, Nanocrystalline silicon, [ PHYS.COND.CM-MS ] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, Scanning thermal microscopy, 021001 nanoscience & nanotechnology, Porous silicon, 01 natural sciences, Thermal conductivity, Swift heavy ion, chemistry, 0103 physical sciences, [ PHYS.MECA.THER ] Physics [physics]/Mechanics [physics]/Thermics [physics.class-ph], [PHYS.MECA.THER]Physics [physics]/Mechanics [physics]/Thermics [physics.class-ph], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Crystalline silicon, Composite material, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology, Porous medium, [ PHYS.COND ] Physics [physics]/Condensed Matter [cond-mat]
Abstract: International audience; In this article, we demonstrate that the thermal conductivity of nanostructured porous silicon is reduced by amorphization and also that this amorphous phase in porous silicon can be created by swift (high-energy) heavy ion irradiation. Porous silicon samples with 41%-75% porosity are irradiated with 110 MeV uranium ions at six different fluences. Structural characterisation by micro-Raman spectroscopy and SEM imaging show that swift heavy ion irradiation causes the creation of an amorphous phase in porous Si but without suppressing its porous structure. We demonstrate that the amorphization of porous silicon is caused by electronic-regime interactions, which is the first time such an effect is obtained in crystalline silicon with single-ion species. Furthermore, the impact on the thermal conductivity of porous silicon is studied by micro-Raman spectroscopy and scanning thermal microscopy. The creation of an amorphous phase in porous silicon leads to a reduction of its thermal conductivity, up to a factor of 3 compared to the non-irradiated sample. Therefore, this technique could be used to enhance the thermal insulation properties of porous Si. Finally, we show that this treatment can be combined with pre-oxidation at 300 °C, which is known to lower the thermal conductivity of porous Si, in order to obtain an even greater reduction.
Published: 2013
Full Text: View/download PDF

20. Elaboration and characterization of boron doping during SiC growth by VLS mechanism

Author: Maher Soueidan, Michel Kazan, Nada Habka, Gabriel Ferro, Mohamad Roumie, Veronique Soulière, Jean-Marie Bluet, Bilal Nsouli, Lebanese Atomic Energy Comission [CNRS-L] (LAEC-CNRS), National Council for Scientific Research = Conseil national de la recherche scientifique du Liban [Lebanon] (CNRS-L), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Laboratoire des Multimatériaux et Interfaces (LMI), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Department of Physics, and American University of Beirut [Beyrouth] (AUB)
Subjects: Semiconducting silicon compounds, Materials science, Photoluminescence, Silicon, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Optical microscopy, Inorganic Chemistry, symbols.namesake, Materials Chemistry, Doping, [CHIM.CRIS]Chemical Sciences/Cristallography, [CHIM]Chemical Sciences, Vapor–liquid–solid method, Boron, Liquid phase epitaxy, 020502 materials, [CHIM.MATE]Chemical Sciences/Material chemistry, Atmospheric temperature range, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Secondary ion mass spectrometry, 0205 materials engineering, chemistry, symbols, 0210 nano-technology, Raman spectroscopy
Abstract: VLS mechanism was used for growing boron doped homoepitaxial SiC layers on 4H-SiC(0 0 0 1) 8° off substrate. Si-based melts were fed by propane in the temperature range 1450–1500 °C. Two main approaches were studied to incorporate boron during growth: (1) adding elemental B in the initial melt, with two different compositions: Si 90 B 10 and Si 27 Ge 68 B 5 ; the growth was performed at 1500 °C; (2) adding B 2 H 6 to the gas phase during growth with a melt composition of Si 25 Ge 75 ; the growth was performed at 1450 °C. In most cases, the growth time was limited by liquid loss. The longest growth duration (1 h) was obtained when adding B 2 H 6 to the gas phase. In the case of Si 90 B 10 melt, the surface morphology exhibits large and parallel terraces whereas the step front is more undulated when adding Ge. Raman and photoluminescence characterizations performed on these layers confirmed the 4H polytype of the layers in addition to the presence of B, which results in a strong B–N donor–acceptor band. The thickness and the growth rate were determined by micro-Infrared spectroscopy. Particle Induced γ-ray Emission (PIGE) was tentatively used to detect B incorporation inside the grown layers. These results were compared to SIMS measurements from which B concentration was found to vary from 10 18 to 10 19 at cm −3 .
Published: 2011
Full Text: View/download PDF

21. Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

Author: W. Chikhaoui, Catherine Bru-Chevallier, Christian Dua, Jean-Marie Bluet, N. Sarazin, M.-A. Poisson, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Thales Research and Technology [Palaiseau], THALES, Alcatel-Thalès, Marcoussis (91), Alcatel-Thalès III-V lab (III-V Lab), and THALES-ALCATEL
Subjects: 010302 applied physics, Materials science, Deep-level transient spectroscopy, Physics and Astronomy (miscellaneous), business.industry, Wide-bandgap semiconductor, Schottky diode, 02 engineering and technology, Atmospheric temperature range, 021001 nanoscience & nanotechnology, 01 natural sciences, Fourier transform spectroscopy, Barrier layer, [SPI]Engineering Sciences [physics], 0103 physical sciences, Optoelectronics, Metalorganic vapour phase epitaxy, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Leakage (electronics)
Abstract: In order to assess possible mechanisms of gate reverse-bias leakage current in AlInN/GaN high electron mobility transistors (HEMTs) grown by metalorganic chemical-vapor deposition on SiC substrates, temperature-dependent current-voltage measurements combined with Fourier transform current deep level transient spectroscopy (FT-CDLTS) are performed in the temperature range of 200–400 K. In this range of temperature reverse-bias leakage current flow is found to be dominated by Poole–Frenkel emission. Based on CDLTS measurements, a model of leakage current transport via a trap state located at the AlInN/metal interface with an activation energy of 0.37 eV is suggested. The trap nature is shown to be an extended trap, most probably associated with dislocations in the AlInN barrier layer.
Published: 2010
Full Text: View/download PDF

22. Temperature dependent degradation modes in AlGaN/GaN HEMTs

Author: Douvry, Y., Hoel, V., Jaeger, J. -C, Defrance, N., Sury, C., Malbert, N., Labat, N., Curutchet, A., Dua, C., Oualli, M., Piazza, M., Jean-Marie bluet, Chikhaoui, W., Bru-Chevallier, C., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Published: 2010

23. Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs

Author: Nathalie Malbert, M. Oualli, Christian Dua, Catherine Bru-Chevallier, J.-C. De Jaeger, Y. Douvry, Nathalie Labat, Virginie Hoel, C. Sury, W. Chikhaoui, M. Piazza, Arnaud Curutchet, Nicolas Defrance, Jean-Marie Bluet, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: 010302 applied physics, Materials science, Wide-bandgap semiconductor, Gallium nitride, 02 engineering and technology, Activation energy, 021001 nanoscience & nanotechnology, 01 natural sciences, Noise (electronics), Temperature measurement, chemistry.chemical_compound, Reliability (semiconductor), chemistry, 0103 physical sciences, Electronic engineering, Degradation (geology), Composite material, 0210 nano-technology, Order of magnitude
Abstract: This study reports on a reliability investigation of AlGaN/GaN HEMTs submitted to life tests in High Temperature Operating (HTO) conditions at 150°C, 175°C, 275°C and 320°C. These life tests showed two different degradation steps of the drain current. One is occurring in the first tens of hour of the life test and characterized by a decrease of the drain current. The evolution of the electrical characteristics during ageing does not depend on the bias conditions but rather on the channel temperature. This degradation mode is characterized by a high activation energy of 1.2eV. The small changes of electrical characteristics observed during the life tests results from a combination of trap-related effects before stabilization sets in. The second failure mechanism observed during the HTO tests at 275°C and 320°C results in a higher drain current decrease. Moreover, no stabilization of the parameter drifts was observed before the end of the tests. Pulsed I-V measurements show a large evolution of gate lag and drain lag rates after HTOT275 and HTOT320 life tests. LF 1/f noise after the life tests at high temperature drastically increased by more than two orders of magnitude while it hardly changed after 2000 hours of life test at 150°C and 175°C. It results that the temperature is considered as an acceleration factor of the degradation affecting the conduction channel. TEM observations revealed similar damages in the gate finger cross-section of aged devices after the HTOT275 and HTOT320 life tests. These results could point out a degradation mechanism associated with the inverse piezoelectric effect.
Published: 2010
Full Text: View/download PDF

24. Deep levels investigation of AlGaN/GaN heterostructure transistors

Author: P. Girard, Raphaël Aubry, Georges Bremond, Jean-Marie Bluet, Christian Dua, Catherine Bru-Chevallier, W. Chikhaoui, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Plateforme Technologique Nanolyon (INL - Nanolyon), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Thales Research and Technology [Palaiseau], and THALES
Subjects: 010302 applied physics, Materials science, Deep-level transient spectroscopy, Condensed matter physics, Schottky barrier, Gallium nitride, Heterojunction, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Poole–Frenkel effect, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, Surface coating, [SPI]Engineering Sciences [physics], chemistry, Depletion region, 0103 physical sciences, Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract: In this work we investigate AlGaN/GaN HEMTs structures grown by metalorganic chemical-vapor deposition on SiC substrates. They consist of a 22 nm thick undoped AlGaN barrier with Al mole fraction x=0.24 on top of a 1.7 μm unintentionally doped GaN buffer layer. Structures with large gate are analyzed by Fourier transform deep level transient spectroscopy (FT-DLTS) between 100 and 450 K. The dominant traps are found to be electron traps with activation energies of 0.12, 0.15, 0.21, 0.40, 0.49 and 0.94 eV. The detailed analysis of DLTS spectra shows a strong dependence on the electric-field in the space charge region of the Schottky contact. Poole–Frenkel mechanism is observed and confirmed by the reverse current characteristic analysis. The nature of the deep traps is also discussed.
Published: 2009
Full Text: View/download PDF

25. PL characterization of GaN scintillator for radioluminescence-based dosimetry

Author: Patrick Pittet, Guo-Neng Lu, Jacques Balosso, Jean-Marc Galvan, Ismail Anas, Jean-Marie Bluet, J.-Y. Giraud, INL - Conception de Systèmes Hétérogènes (INL - CSH), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique de la matière (LPM), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Département de cancérologie et radiothérapie, CHU Grenoble, Rayonnement Synchrotron et Recherche Medicale (RSRM), and Université Joseph Fourier - Grenoble 1 (UJF)-European Synchrotron Radiation Facility (ESRF)-Institut National de la Santé et de la Recherche Médicale (INSERM)
Subjects: Photoluminescence, Materials science, Exciton, 02 engineering and technology, Scintillator, 01 natural sciences, Inorganic Chemistry, symbols.namesake, [SPI]Engineering Sciences [physics], Vacancy defect, 0103 physical sciences, Electrical and Electronic Engineering, Physical and Theoretical Chemistry, Spectroscopy, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, Organic Chemistry, Fermi level, Radioluminescence, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Wavelength, symbols, Optoelectronics, 0210 nano-technology, Luminescence, business
Abstract: Via photoluminescence (PL) measurements, we have investigated GaN (which is a widely employed material in optoelectronics) to be used as scintillator for developing implantable dosimetric probes. The studied Si-doped n-type GaN samples have common dominant band-edge emission at room temperature, with a strong doping-dependence on their PL spectra. Si-doped GaN with 1018 cm−3 concentration exhibits a non-negligible yellow luminescence (YL) or red luminescence broad band contribution, which is probably due to Ga vacancy native defect. However, heavily-doped GaN (∼1.5 × 1019 cm−3) has much more intense band-edge emission, with no significant contributions of lower-energy bands. The dominant band-edge emission peak remains unchanged at 3.4 eV for both concentrations, and may be accounted for by considering combined effects of band-gap narrowing and Fermi level rising. It has also been demonstrated by back-side PL collection that, due to bulk self-absorption, the dominant peak is shifted to 3.25 eV DAP (donor–acceptor-pair) or e–A (conduction-band-to-acceptor) band. At low temperatures (up to 200 K), PL intensity of heavily-doped GaN is dominated by a DBE (donor-bound exciton) line (D0XA at 3.467 eV for T = 10 K). When further increasing the temperature, band-to-band recombination becomes dominant with red-shift of the emission peak in connection with gap narrowing. The shift in peak wavelength from 10 K to room temperature is about 5 nm, while the corresponding PL integrated intensity is decreased only by 30%. Irradiating samples at room temperature to a 200 Gy dose with 6 MeV photon and electron beams causes a slight increase on defect-related DAP or e–A line and YL broad band, but the effect is not noticeable for heavily-doped GaN.
Published: 2009
Full Text: View/download PDF

26. Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs

Author: W. Chikhaoui, Catherine Bru-Chevallier, M. Oualli, Nathalie Labat, J.-C. De Jaeger, Nathalie Malbert, Y. Douvry, Virginie Hoel, C. Sury, Nicolas Defrance, Jean-Marie Bluet, Christian Dua, Arnaud Curutchet, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1, ANR-06-BLAN-0118,CARDYNAL,CARactérisation électrique et Modélisation physique des DYsfonctionnements des HEMTs à base de Nitrure de gALlium(2006), Labat, Nathalie, and Programme 'blanc' - CARactérisation électrique et Modélisation physique des DYsfonctionnements des HEMTs à base de Nitrure de gALlium - - CARDYNAL2006 - ANR-06-BLAN-0118 - BLANC - VALID
Subjects: Materials science, Schottky barrier, Lag, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 02 engineering and technology, High-electron-mobility transistor, Activation energy, Low frequency, 01 natural sciences, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Safety, Risk, Reliability and Quality, Saturation (magnetic), ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, 020208 electrical & electronic engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics, Ageing, Optoelectronics, business, Voltage
Abstract: International audience; This work is a study of the degradations of AlGaN/GaN HEMTs induced by 2000 h of ageing tests. The methodology is based on cross-characterisation analysis.The life tests (HTO 150 °C, HTO 175 °C and HTRB 175 °C and Idq 90 °C) have mainly induced a decrease of the saturation drain current, occurring during the first 50 h, followed by a stabilisation. There is a shift of the pinch-off voltage in the range of 0.1–0.2 V while the Schottky contact is rather stable after ageing. The evolution of the electrical characteristics after ageing does not depend on the bias conditions but rather more on the channel temperature. It seems to be neither field nor current driven. Low frequency drain current noise demonstrates that there is no trap creation and the weak evolution of the 1/f noise confirms that there is no degradation in the channel. Moreover, pulsed I–V measurements show a weak evolution of gate lag and drain lag rates after ageing. The same degradation mode is demonstrated for all life tests with rather high activation energy of 1.6 eV. The weak evolution of electrical characteristics observed during the life tests cannot be obviously explained by a single physical mechanism and results from a combination of trap-related effects before stabilisation.
Published: 2009
Full Text: View/download PDF

27. Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate

Author: Christophe Gaquiere, Gérard Guillot, M. Gassoumi, Jean-Marie Bluet, Hassen Maaref, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: 010302 applied physics, Deep-level transient spectroscopy, Materials science, business.industry, Aluminium nitride, General Engineering, Gallium nitride, 02 engineering and technology, High-electron-mobility transistor, Substrate (electronics), 021001 nanoscience & nanotechnology, 01 natural sciences, Threshold voltage, chemistry.chemical_compound, Hysteresis, chemistry, 0103 physical sciences, Electronic engineering, Silicon carbide, Optoelectronics, 0210 nano-technology, business
Abstract: Deep levels in AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrate are known to be responsible for trapping processes like: threshold voltage shift, leakage current, degradation current, kink effect and hysteresis effect. The related deep levels are directly characterized by conductance deep level transient spectroscopy (CDLTS) method. Hereby, we have detected five carrier traps with activation energy ranging from 0.84 to 0.07eV. In this study, we have revealed the presence of two hole-like traps (HL1 and HL2) observed for the first time by CDLTS with activations energy of 0.40 and 0.84eV. The localisation and the identification of these traps are presented. Finally, the correlation between the anomalies observed on output and defects is discussed.
Published: 2009
Full Text: View/download PDF

28. UV photoreflectance spectroscopy in strained silicon on insulator structures

Author: Catherine Bru-Chevallier, Houssam Chouaib, Jean-Marie Bluet, Georges Bremond, Jacobo Munguia, BRU CHEVALLIER, Catherine, Laboratoire de physique de la matière (LPM), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Band gap, [SPI] Engineering Sciences [physics], [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Analytical chemistry, Silicon on insulator, Insulator (electricity), 02 engineering and technology, 01 natural sciences, symbols.namesake, [SPI]Engineering Sciences [physics], 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, Spectroscopy, ComputingMilieux_MISCELLANEOUS, Chemistry, Strained silicon, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Redshift, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, symbols, Direct and indirect band gaps, 0210 nano-technology, Raman spectroscopy
Abstract: The optical modulation technique of photoreflectance (PR) is applied on tensely-strained silicon on insulator (sSOI) substrates in order to determine the deformation potential in the strained silicon direct band gap. Raman spectroscopy is used for strain determination. A redshift of the Si direct band gap transition is observed as the strain induced in the layer is increased. We report a band gap shrinkage at Γ-point down to 60 ± 6 meV, 120 ± 15 meV and 127 ± 13 meV for 0.77 ± 0.02%, 1.22 ± 0.02% and 1.40 ± 0.03% of strain, respectively. The obtained deformation potential in the direct band gap (a=―0.55 eV and b =―2.45 eV) are in good agreement with previously reported results for bulk material.
Published: 2009

29. Application of 3C-SiC quantum dots for living cell imaging

Author: J. Botsoa, Vladimir Lysenko, Alain Géloën, Gérard Guillot, Jean-Marie Bluet, Olivier Marty, Conditions Extrêmes et Matériaux : Haute Température et Irradiation (CEMHTI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon, Cardiovasculaire, métabolisme, diabétologie et nutrition (CarMeN), Institut National de la Recherche Agronomique (INRA)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Hospices Civils de Lyon (HCL)-Institut National de la Santé et de la Recherche Médicale (INSERM), Université d'Orléans (UO)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Hospices Civils de Lyon (HCL)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon-Institut National de la Recherche Agronomique (INRA)
Subjects: Fluorescence-lifetime imaging microscopy, Materials science, Physics and Astronomy (miscellaneous), technology, industry, and agriculture, Nanotechnology, 02 engineering and technology, Living cell, equipment and supplies, 010402 general chemistry, 021001 nanoscience & nanotechnology, Biocompatible material, 01 natural sciences, Fluorescence, 0104 chemical sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI]Engineering Sciences [physics], stomatognathic system, Semiconductor quantum dots, Quantum dot, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, Luminescence, ComputingMilieux_MISCELLANEOUS, Cellular biophysics
Abstract: Highly luminescent, stable, and biocompatible 3C-SiC quantum dots (QDs) with no protective shells have been applied for fluorescence imaging of biological living cells. Structural and luminescent properties of the 3C-SiC QDs are described. Marking of the living cells with such QDs highlights the penetration, accumulation, and heterogeneous distribution of the QDs inside the intracellular space.
Published: 2008
Full Text: View/download PDF

30. Characterization of deep levels in high electron mobility transistor by conductance deep level transient spectroscopy

Author: Christophe Gaquiere, M. Gassoumi, Hassen Maaref, Jean-Marie Bluet, Gérard Guillot, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: 010302 applied physics, Deep-level transient spectroscopy, Materials science, Silicon, business.industry, Induced high electron mobility transistor, Conductance, chemistry.chemical_element, Bioengineering, 02 engineering and technology, Substrate (electronics), High-electron-mobility transistor, Atmospheric temperature range, 021001 nanoscience & nanotechnology, 01 natural sciences, Biomaterials, chemistry, Mechanics of Materials, 0103 physical sciences, Optoelectronics, Transient (oscillation), 0210 nano-technology, business
Abstract: The influence of a substrate voltage on the dc characteristics of an AlGaN/GaN high electron mobility transistor (HEMT) on silicon (111) substrate is profited to investigate traps that are located between the substrate and the two-dimensional electron gas (2DEG) channel. The transient of the drain current after applying a negative substrate voltage is evaluated in the temperature range from 77 to 600 K. With this method, known as Conductance Deep Level Transient Spectroscopy (CDLTS), majority deep levels with activation energy of 61 meV as well as minority carrier traps at 74 meV and capture cross-section respectively 2.56 × 10 − 15 cm 2 , 2.1 × 10 − 15 cm 2 are identified. Finally, the correlation between the anomalies observed on the output characteristics and defects is discussed.
Published: 2008
Full Text: View/download PDF

31. Barrier height homogeneity for 4.5 kV 4H-SiC Schottky diodes

Author: Philippe Godignon, Josep Montserrat, Gérard Guillot, D. Ziane, Pierre Brosselard, Jean-Marie Bluet, Dominique Tournier, Laboratoire de physique de la matière (LPM), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), and Centro Nacional de Microelectronica [Spain] (CNM)
Subjects: 010302 applied physics, SiC, Materials science, Condensed matter physics, business.industry, Semiconductor materials, Schottky barrier, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Schottky diode, Thermionic emission, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Standard deviation, barrier height, 0103 physical sciences, Homogeneity (physics), Optoelectronics, General Materials Science, Electrical and Electronic Engineering, 0210 nano-technology, business, Diode
Abstract: 4.5 kV SiC Schottky diodes have been fabricated using Ni as the Schottky contact. A manufacturing yield of 40% is reached for the bigger area diodes (1.6×1.6 mm2) and of 70% for the smaller ones (0.4×0.4 mm2). The measured variations of barrier height and ideality factor with temperature do not agree with the thermionic model. This has been interpreted in terms of barrier height inhomogeneities using the Werner model. We extracted an average barrier height ϕ b ¯ = 1 eV and its standard deviation ( σ = 90 mV ) . These two parameters are almost independent of the diode size. The variation of the barrier height distribution with field has also been investigated and shows a dependence similar to that of Schottky diodes realized from other semiconductor materials.
Published: 2006
Full Text: View/download PDF

32. Ni-Al ohmic contact to p-type 4H-SiC

Author: Heu Vang, Dominique Planson, Christophe Raynaud, J. L. Leclercq, Jean-Marie Bluet, Pierre Cremillieu, M. Lazar, Sigo Scharnholz, Pierre Brosselard, Ampère, Publications, Centre de génie électrique de Lyon (CEGELY), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Plateforme Technologique Nanolyon (INL - Nanolyon), Institut des Nanotechnologies de Lyon (INL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), INL - Nanophotonique (INL - Photonique), Institut franco-allemand de recherches de Saint-Louis (ISL), DGA-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Planson, Dominique, Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon, Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), DGA-Matériaux et nanosciences d'Alsace (FMNGE), Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS), Ampère (AMPERE), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Laboratoire de physique de la matière (LPM), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Ampère, Département Energie Electrique (EE), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL)
Subjects: SiC, AL/TI CONTACTS, Materials science, Annealing (metallurgy), Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, P-type 4H-SiC, chemistry.chemical_compound, silicon carbide, 0103 physical sciences, Silicon carbide, General Materials Science, Electrical and Electronic Engineering, Rapid thermal annealing, specific resistance, Ohmic contact, 010302 applied physics, Contact resistance, Doping, [SPI.NRJ]Engineering Sciences [physics]/Electric power, p-type, ohmic contact, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Ion implantation, chemistry, TITANIUM, Ohmic contact resistance, 0210 nano-technology, Titanium, Ni/Al, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract: International audience; Investigations on Ni-Al alloys to form ohmic contacts on p-type 4H-SiC are presented in this paper. Several ratios of the Ni/Al contact were examined. Rapid thermal annealing was performed in Argon atmosphere at 400°C during 1 minute, followed by an annealing at 1000°C during 2 minutes. In order to extract the specific contact resistance, transmission line method (TLM) test-structures were fabricated. A specific contact resistance of 3×10-5 Ω.cm2 was obtained reproducibly on p-type layers, with a doping of NA = 1×1019 cm-3 performed by Al2+ ion implantation. The lowest specific contact resistance value measured was 8×10-6 Ω.cm2.
Published: 2006
Full Text: View/download PDF

33. Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates

Author: Noureddine Yacoubi, Jean-Marie Bluet, Gérard Guillot, N. Sghaier, Christophe Gaquiere, J.C. Dejaeger, M. Trabelsi, Abdelkader Souifi, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: 010302 applied physics, Materials science, Condensed matter physics, Silicon, business.industry, Transistor, General Engineering, Electrical engineering, Conductance, chemistry.chemical_element, 02 engineering and technology, Trapping, High-electron-mobility transistor, 021001 nanoscience & nanotechnology, 01 natural sciences, Capacitance, law.invention, Stress (mechanics), chemistry, law, 0103 physical sciences, Sapphire, 0210 nano-technology, business
Abstract: AlGaN/GaN high electron mobility transistors (HEMTs) with Si and Al 2 O 3 substrates reveals anomalies on I ds – V ds – T and I gs – V gs – T characteristics (degradation in drain current, kink effect, barrier height fluctuations, etc.). Stress and random telegraph signal (RTS) measurements prove the presence of trap centers responsible for drain current degradation. An explanation of the trapping mechanism responsible for current instabilities is proposed. Deep defects analysis performed by capacitance transient spectroscopy ( C -DLTS), frequency dispersion of the output conductance ( G ds ( f )), respectively, on gate/source and drain/source contacts and RTS prove the presence of deep defects localized, respectively, in the gate and in the channel regions. Defects detected by C -DLTS and G ds ( f ) are strongly correlated, respectively, to barrier height inhomogeneities and kink anomalies. Gate current analysis confirms the presence of ( G – R ) centers acting like traps at the interface GaN/AlGaN. Finally, the localization of these traps defects is proposed.
Published: 2006

34. Investigation of traps in AlGaN/GaN HEMTs by current transient spectroscopy

Author: Hassen Maaref, I. Dermoul, Christophe Gaquiere, Virginie Hoel, Gérard Guillot, M. Gassoumi, Jean-Marie Bluet, F. Chekir, A. Minko, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: 010302 applied physics, Deep-level transient spectroscopy, Materials science, Analytical chemistry, Conductance, Bioengineering, Heterojunction, 02 engineering and technology, Trapping, Activation energy, Substrate (electronics), 021001 nanoscience & nanotechnology, 01 natural sciences, Threshold voltage, Biomaterials, Mechanics of Materials, Saturation current, 0103 physical sciences, 0210 nano-technology
Abstract: Deep levels in AlGaN/GaN HEMTs on Si substrate are known to be responsible for trapping processes like: threshold voltage shift, leakage current, degradation in saturation current and hysteresis effect. The related deep levels are directly characterized by Conductance Deep Level Transient Spectroscopy (CDLTS) method. Hereby we have detected four carrier traps with activation energy of 0.83, 0.50, 0.20 and 0.07 eV and capture cross-section respectively of σ = 3.14 × 10 − 14 cm 2 , σ = 2.57 × 10 − 15 cm 2 , σ = 3.03 × 10 − 17 cm 2 and σ = 2.65 × 10 − 15 cm 2 . All these traps are located between the substrate and the two-dimensional electron gas (2DEG) channel.
Published: 2006

35. Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding

Author: Michel Pons, Catherine Moisson, Michel Mermoux, Elisabeth Blanquet, Jean-Marie Bluet, Fabrice Letertre, Guy Chichignoud, Patrick Chaudouët, Roland Madar, M Anikin, Laurent Auvray, Etienne Pernot, Laboratoire de thermodynamique et physico-chimie métallurgiques (LTPCM), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG), Laboratoire de physique de la matière (LPM), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Electrochimie et de Physico-chimie des Matériaux et des Interfaces (LEPMI ), Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Joseph Fourier - Grenoble 1 (UJF)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), NOVASIC, NOVASiC, and SOITEC
Subjects: Materials science, Silicon, Wafer bonding, chemistry.chemical_element, Polishing, bulk crystal growth, 02 engineering and technology, Surface finish, 010402 general chemistry, 01 natural sciences, chemistry.chemical_compound, Silicon carbide, Surface roughness, General Materials Science, Wafer, Ceramic, Composite material, Mechanical Engineering, [CHIM.MATE]Chemical Sciences/Material chemistry, Polycrystalline SiC, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 0104 chemical sciences, Crystallography, chemistry, Mechanics of Materials, visual_art, wafer-bonding, visual_art.visual_art_medium, 0210 nano-technology
Abstract: International audience; The transfer by wafer-bonding of single-crystalline SiC thin films to a polycrystalline SiC support to obtain a “quasi-wafer” is an attractive way for lowering the cost of silicon carbide wafers. Such a process needs high quality polycrystalline substrates, with controlled and high-level bulk properties (thermal conductivity, electrical resistivity) and with very low surface roughness and surface bowing. Currently, polycrystalline SiC wafers which are available are siliconized SiC or CVD processed SiC wafers. Siliconized ceramic wafers are very heterogeneous (mixture of 3C, 6H, 15R and silicon), while CVD ones are of better quality (homogeneous and textured 3C). However neither the siliconized SiC nor the CVD SiC can be CMP polished with low roughness over large dimension. In this paper, wafers with large and textured grains (&gt ;1cm) are processed and characterized. The polishing of such structures is studied and optimized to obtain low surface roughness. To meet these requirements high temperature processes used for single crystal growth were selected. Structural investigations performed on the grown ingots showed an important influence of the used seed since no preferential crystallographic orientation was observed during the growth. The final polishing quality was of high level but step heights were observed between grains.
Published: 2006
Full Text: View/download PDF

36. Optical Characterization of Full SiC Wafer

Author: Francis Baillet, Gérard Guillot, I. El Harrouni, D. Ziane, Michel Mermoux, Jean-Marie Bluet, Laboratoire de physique de la matière (LPM), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Electrochimie et de Physico-chimie des Matériaux et des Interfaces (LEPMI ), Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Joseph Fourier - Grenoble 1 (UJF)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Laboratoire de thermodynamique et physico-chimie métallurgiques (LTPCM), and Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)
Subjects: Materials science, 02 engineering and technology, 01 natural sciences, Domain (software engineering), 0103 physical sciences, General Materials Science, Wafer, mapping, 010302 applied physics, lifetime, business.industry, Mechanical Engineering, Doping, Carrier lifetime, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Free carrier, mobility, Characterization (materials science), Mechanics of Materials, Raman spectroscopy, Optoelectronics, 0210 nano-technology, business, Scanning photoluminescence, Intensity (heat transfer)
Abstract: International audience; Different optical characterization tool for mapping of SiC electrical properties (mobility, free carrier concentration, doping, minority carrier effective lifetime) are reviewed. For each technique, advantages and drawbacks are discussed and the domain of use is presented. An original approach to determine the minority carrier lifetime from room temperature PL intensity is more particularly developed.
Published: 2004
Full Text: View/download PDF

37. Characterizations of SiC/SiO2 Interface Quality Toward High Power MOSFETs Realization

Author: Ziane, D., Jean-Marie bluet, Guillot, G., Godignon, P., Monserrat, J., Ciechonski, R., Syväjärvi, M., Yakimova, R., Chen, L., Mawby, P., Laboratoire de physique de la matière (LPM), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA), Centro Nacional de Microelectronica [Spain] (CNM), Department of Physics, Chemistry and Biology, Linköping University, and University of Wales Swansea
Subjects: [SPI]Engineering Sciences [physics], G-V, C-V, Sublimation epitaxy, Interface states, MOS
Abstract: International audience; The low channel mobility in N-MOS 4H-SiC transistor is a major key issue for the development of power devices with satisfactory on state characteristics. Previous works have demonstrated that this low channel mobility is due to high interface state density (Dit) near the conduction band edge. Furthermore, the realization of SiC MOSFETs sustaining high reverse field necessitates thick epitaxial layer growth. An important thickness (> 30 µm) unfortunately involves important surface roughness which may result in a high interface trap density (Dit) and surface potential fluctuation (σ s) at the SiC/SiO 2 interface. In this study, we focus on SiO 2 /SiC MOS interface quality characterization as a function of process conditions and material properties (dopant type, thick layer growth technique). Investigations of the oxide quality on thick layers grown by CVD and PVT has been realized using CV under UV lightening and GV techniques. We evidenced that the Dit value (between 10 10 cm-2 .eV-1 and 9×10 10 cm-2 .eV-1 from 0.9 Ev to 0.2 eV below Ec) and σ s value (60 mV) were slightly lower for thick PVT layers. A discrepancy in the Dit values obtained from C-V and G-V measurements is attributed to the large surface potential standard deviation. Results from an original oxide growth process using a deposited sacrificial silicon layer under UHV conditions are also presented.
Published: 2003
Full Text: View/download PDF

38. Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman spectroscopy Imaging and Photoluminescence Spectroscopy Imaging

Author: Michel Pons, Michel Mermoux, Roland Madar, Jean-Marie Bluet, M Anikin, Etienne Pernot, Didier Chaussende, I. El Harrouni, Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique de la matière (LPM), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Electrochimie et de Physico-chimie des Matériaux et des Interfaces (LEPMI ), Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Joseph Fourier - Grenoble 1 (UJF)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), NOVASIC, NOVASiC, Laboratoire de thermodynamique et physico-chimie métallurgiques (LTPCM), and Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)
Subjects: 010302 applied physics, Materials science, Photoluminescence, business.industry, Mechanical Engineering, Synchrotron topography, scanning photoluminescence, [CHIM.MATE]Chemical Sciences/Material chemistry, Condensed Matter Physics, 01 natural sciences, Synchrotron, law.invention, 010309 optics, symbols.namesake, Mechanics of Materials, law, 0103 physical sciences, Raman spectroscopy, symbols, Optoelectronics, General Materials Science, business, Spectroscopy
Abstract: International audience; Reflection synchrotron topography, integrated photoluminescence imaging and Raman spectroscopy imaging have been performed on a 4H-SiC slice. The three methods give complementary information on the defects in the crystal. The differences between the observations are discussed.
Published: 2003
Full Text: View/download PDF

39. Luminescence nanothermometry with alkyl-capped silicon nanoparticles dispersed in nonpolar liquids

Author: Philippe Vergne, Virginie Monnier, Gérard Guillot, Georges Bremond, Nicholas Blanchard, Michel Querry, Yann Chevolot, Sergey Alekseev, David Philippon, Jean-Marie Bluet, Hamza Hajjaji, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon, Faculty of Chemistry, Taras Shevchenko National University of Kyiv, Institut de Recherche en Informatique Fondamentale (IRIF (UMR_8243)), Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), Institut Lumière Matière [Villeurbanne] (ILM), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), INL - Chimie et Nanobiotechnologies (INL - C&N), Laboratoire de Mécanique des Contacts et des Structures [Villeurbanne] (LaMCoS), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon, and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Photoluminescence, [SDV.BIO]Life Sciences [q-bio]/Biotechnology, Silicon, Low-polarity liquids, Nanoparticle, Nanochemistry, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, 7. Clean energy, Materials Science(all), General Materials Science, Functionalization, Alkyl, chemistry.chemical_classification, Potential well, Nano Express, [CHIM.MATE]Chemical Sciences/Material chemistry, Temperature sensing, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 0104 chemical sciences, Silicon nanoparticles, chemistry, Chemical engineering, Surface modification, 0210 nano-technology, Luminescence
Abstract: International audience; Silicon nanoparticles (Si NPs) with a diameter size ranging from 4 to 8 nm were successfully fabricated. They exhibit a visible photoluminescence (PL) due to the quantum confinement effect. Chemical functionalization of these Si NPs with alkyl groups allowed to homogeneously disperse them in nonpolar liquids (NPLs). In comparison to most of literature results for Si NPs, an important PL peak position variation with temperature (almost 1 meV/K) was obtained from 303 to 390 K. The influence of the liquid viscosity on the peak positions is also presented. These variations are discussed considering energy transfer between nanoparticles. The high PL thermal sensitivity of the alkyl-capped Si NPs paves the way for their future application as nanothermometers.
Full Text: View/download PDF

40. Caractérisation expérimentale du transfère thermique dans les matériaux nanostructurés à base de silicium

Author: Massoud, Mouhannad, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université de Lyon, Jean-Marie Bluet, Pierre-Olivier Chapuis, INL - Spectroscopies et Nanomatériaux ( INL - S&N ), Institut des Nanotechnologies de Lyon ( INL ), École Centrale de Lyon ( ECL ), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon ( CPE ) -Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ) -École Centrale de Lyon ( ECL ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), and STAR, ABES
Subjects: Phonon coherence, Nanothermomètrie, Transfert thermique, [ SPI.MAT ] Engineering Sciences [physics]/Materials, Heavy ion irradiation, Nanothermometry, Suspended membrane, [SPI.MAT] Engineering Sciences [physics]/Materials, Silicium amorphe, Amorphous Silicon, Irradiation aux ions lourds, [SPI.MAT]Engineering Sciences [physics]/Materials, Micro-Raman thermometry, Heat transfer, Cohérence phonique, Phonon, Régime électronique, Superlattice, Super-Réseau, Membrane suspensue, Thermométrie micro-Raman, Membrane phonique, Silicium mésoporeux, Microscopie à sonde thermique locale, Thermal conductivity, Conductivité thermique, Phononic membrane, Electronic regime, Scanning Thermal Microscopy
Abstract: This PhD thesis deals with the experimental characterization of heat transfer at the nanoscale in materials compatible with microelectronic processes. Two characterization techniques are applied to two different systems, irradiated mesoporous silicon and suspended silicon membranes. The first characterization technique is micro-Raman thermometry. The laser power heats up the exposed sample. The determination of the thermal conductivity requires the modeling of the heat source using finite element simulations. The modeling of the heat source relies on different parameters that should be carefully determined. The second characterization technique is Scanning Thermal Microscopy (SThM), an Atomic Force Microscopy (AFM)-based technique. Operated in its active mode, the AFM probe is replaced by a resistive Wollaston probe that is heated by Joule heating. Used in AFM contact mode, this technique allows a local thermal excitation of the studied material. The determination of the thermal conductivity requires the analysis of the thermal response of the probe using calibration samples and modeling when dealing with complicated geometries. The effect of the tip position on heat transfer between the tip and the sample is studied. A new method decoupling the heat transfer between the tip and the sample, at the contact and through air, is proposed for determining the thermal conductivity of complicated geometries. The results obtained from the two techniques on irradiated mesoporous silicon samples using heavy ions in the electronic regime are in good agreement. They show a degradation of the thermal conductivity of mesoporous silicon due to the increase in the amorphous phase while increasing the ion fluence. The results obtained on suspended silicon membrane strips show a decrease in the thermal conductivity of more than 50 % in comparison to bulk silicon. When perforated into a phononic structure of sub-100 nm period, the membrane thermal conductivity is about one order of magnitude lower than the bulk. A chapter introducing a promising silicon-based material for the evidence of phonon coherence concludes the manuscript., Ce mémoire de thèse aborde la caractérisation expérimentale du transfert thermique à l’échelle nanométrique dans des matériaux compatibles avec les procédés de la micro-électronique. Pour cela deux techniques de caractérisation sont appliquées chacune à deux différents systèmes, le silicium mésoporeux irradié et les membranes de silicium suspendues. La première technique de caractérisation est la thermométrie micro-Raman. La puissance du laser chauffe l'échantillon exposé. La détermination de la conductivité thermique nécessite la modélisation de la source de chaleur par la méthode des éléments finis. Dans les cas considérés la modélisation de la source de chaleur repose sur différents paramètres qui doivent être soigneusement déterminés. La seconde technique de caractérisation est la microscopie à sonde locale (d’acronyme anglais SThM), basée sur le principe de la microscopie à force atomique (d’acronyme anglais AFM). Utilisée en mode actif, la sonde AFM est remplacée par une sonde résistive de type Wollaston qui est chauffée par effet Joule. Utilisée en mode AFM contact, cette technique permet une excitation thermique locale du matériau étudié. La détermination de la conductivité thermique nécessite l'analyse de la réponse thermique de la sonde au moyen d'échantillons d'étalonnage et également via la modélisation dans le cas des géométries complexes. L'effet de la position de la pointe sur le transfert de chaleur entre la pointe et l'échantillon est étudié. Une nouvelle méthode de découplage entre le transfert de chaleur entre la pointe et l'échantillon, respectivement à travers l'air et au contact, est proposée pour la détermination de la conductivité thermique des géométries complexes. Les résultats obtenus avec les deux techniques pour les échantillons de silicium mésoporeux irradiés à l’aide d’ions lourds dans le régime électronique sont en bon accord. Ils montrent la dégradation de la conductivité thermique du silicium mésoporeux suite à une augmentation dans la phase d’amorphe lorsque la dose d’irradiation croît. Les résultats obtenus sur les membranes de silicium suspendues montrent une réduction de la conductivité thermique de plus de 50 % par rapport au silicium massif. Lorsque la membrane est perforée périodiquement afin de réaliser une structure phononique de période inférieure à 100 nm, cette réduction est approximativement d’un ordre de grandeur. Un chapitre introduisant un matériau prometteur à base de silicium pour observer des effets de cohérence phononique conclut le manuscrit.
Published: 2016

41. Contacts boîtes quantiques photoluminescentes de CdSe/CdS/ZnS pour la mesure de la température et de la pressure dans les contacts elastohydrodynamiques

Author: Albahrani , Sayed Mohamed Baqer, STAR, ABES, Laboratoire de Mécanique des Contacts et des Structures [Villeurbanne] ( LaMCoS ), Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), Université de Lyon, Jean-Marie Bluet, Philippe Vergne, Laboratoire de Mécanique des Contacts et des Structures [Villeurbanne] (LaMCoS), Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: [ SPI.MECA ] Engineering Sciences [physics]/Mechanics [physics.med-ph], Quantum dots, Lubricant, Boite quantique InAs/InP, Elasto-Hydrodynamic lubrication, Mécanique, [SPI.MECA]Engineering Sciences [physics]/Mechanics [physics.med-ph], Mechanical, Température, [SPI.MECA] Engineering Sciences [physics]/Mechanics [physics.med-ph], Lubrification EHD, Rhéologie, Contact mechanics, Mécanique des contacts, Lubrification, Pressure, Pression, Lubrification élastohydrodynamique, Lubrifiant, Ehd, Rheology, Photoluminescence
Abstract: Temperature and pressure are two relevant parameters for the optimization of lubrication performance in the elastohydrodynamic lubrication (EHL) regime. To date, various experimental methods have been developed to measure these two parameters with more or less success. In a continuation of these efforts, some investigations are presented in the current work in view of developing a new in situ technique allowing for local measurements of these two parameters throughout elastohydrodynamic (EHD) contacts. This technique exploits the photoluminescence (PL) sensitivity of CdSe/CdS/ZnS quantum dots (QDs) to changes in temperature and pressure. In this respect, calibrations have been carried out in order to establish the sensitivity of these QDs to the two parameters. Moreover, the versatility of these QDs for sensing applications have been examined by testing two different lubricants, namely squalane and a mixture of squalane and cyclopentane. Some measurements were also conducted under dynamic conditions, in order to study (i) the influence of the QDs presence on the lubricant rheology and (ii) the influence of shear rate on the PL of QDs. Although these different tests demonstrated the potential of CdSe/CdS/ZnS QDs, they revealed the existence of other parameters that affect, in addition to temperature and pressure, their response. A comprehensive study was thus conducted in order to elucidate the mechanisms behind these findings. More importantly, a methodology was defined in order to minimize these undesired influences and, in fine, enable these QDs to be used as reliable nanosensors., La température et la pression sont deux paramètres particulièrement importants pour l’optimisation des performances du régime de lubrification élastohydrodynamique (EHL). A ce jour, différentes méthodes expérimentales ont été développées, avec plus ou moins du succès, pour la mesure de ces deux paramètres. Ce travail présente, en continuité de ces approches, des investigations visant à développer une nouvelle technique in situ permettant de mesurer localement ces deux grandeurs dans les contacts élastohydrodynamiques (EHD). Cette technique exploite la sensibilité en photoluminescence (PL) des boîtes quantiques (ou en anglais « quantum dots (QDs)) de CdSe/CdS/ZnS aux variations de température et de pression. A cet égard, des calibrations ont été réalisées afin d’évaluer la sensibilité de ces QDs aux deux paramètres. De plus, la versatilité de ces QDs comme nanosondes a été examinée en testant deux lubrifiants différents : le squalane et un mélange de squalane et de cyclopentane. Des mesures ont été également effectuées sous conditions dynamiques afin d’étudier (i) l’influence de la présence des QDs sur la rhéologie du lubrifiant et (ii) l’influence du taux de cisaillement sur la PL des QDs. Bien que ces différents tests aient prouvé le potentiel des QDs de CdSe/CdS/ZnS, ils ont révélé l’existence d’autres paramètres qui peuvent, tout comme la température et la pression, en modifier la réponse. L’étude a été menée afin d’approfondir la compréhension des mécanismes responsables de tels effets. Plus important encore, une méthodologie a été définie pour minimiser ces effets indésirables, et pour in fine, permettre l’usage de ces QDs en tant que nanosondes fiables.
Published: 2016

42. Initialisation et propriétés optiques des plasmons améliorés des carbures de silicium nanostructurés

Author: Zakharko , Yuriy, STAR, ABES, INL - Spectroscopies et Nanomatériaux ( INL - S&N ), Institut des Nanotechnologies de Lyon ( INL ), École Centrale de Lyon ( ECL ), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon ( CPE ) -Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ) -École Centrale de Lyon ( ECL ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), INSA de Lyon, Jean-Marie Bluet, Volodymyr Lysenko, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: [SPI.OTHER]Engineering Sciences [physics]/Other, Nanostructure, [ SPI.OTHER ] Engineering Sciences [physics]/Other, Silicon Carbide, [SPI.OTHER] Engineering Sciences [physics]/Other, Nonlinear optical response, Plasmon enhancement, Exaltation plasmonique, Confinement quantique, Biological marker, Marquage biologique, Quantum Confinement, Réponse optique non linéaire, Photoluminescence, Carbure de silicium
Abstract: Nanostructured silicon carbide (SiC) is considered today as a good alternative to the conventional materials for various multidisciplinary applications. In this thesis, SiC nanostructures were elaborated by means of electrochemical etching and laser ablation techniques. The first part of the thesis clarifies size-dependence of optical properties as well as importance of local-field effects onto the photoinduced electronic transitions of SiC nanostructures. In the second part of the thesis strong 15-fold photoluminescence enhancement of SiC nanoparticles is ensured by their near-field interactions with multipolar localized plasmons. Further, 287-fold and 72-fold plasmon-induced enhancement factors of two-photon excited luminescence and second harmonic generation is achieved, respectively. The main physical mechanisms responsible for the observed effects were described by three-dimensional finite-difference time domain simulations. Finally, the coupling effect of luminescent SiC nanoparticles to plasmonic nanostructures is used in the enhanced labelling of biological cells on the planar structures. As a perspective, colloidal plasmonic (Au@SiO2)SiC nanohybrids were elaborated and characterized., Le carbure de silicium (SiC) nanostructuré est considéré aujourd'hui comme une bonne alternative aux matériaux traditionnels pour diverses applications multidisciplinaires. Dans cette thèse, des nanostructures de SiC ont été élaborées par gravure électrochimique et par ablation laser. La première partie de cette thèse décrit et explique la dépendance en taille des propriétés optiques ainsi que l'importance des effets de champ local sur les transitions électroniques photo-induites des nanostructures de SiC. Dans la seconde partie, il est démontré une amplification d’un facteur 15 de l’intensité de photoluminescence des nanoparticules de SiC par leurs interactions en champ proche avec les plasmons multipolaires localisées. En outre, un facteur 287 et un facteur 72, induits par le couplage plasmonique, sont obtenus respectivement pour les signaux de luminescence à deux photons et de génération de seconde harmonique. Les principaux mécanismes physiques responsables des effets observés ont été décrits par des simulations de type différences finies dans le domaine temporel en trois dimensions. Enfin, l'effet de couplage de nanoparticules de SiC luminescentes à des nanostructures plasmoniques en structures planes est utilisé pour améliorer le marquage de cellules biologiques. Une perspective est ouverte sur la réalisation et les premières caractérisations de suspension colloïdales de nanohybrides plasmonique (Au@SiO2)SiC.
Published: 2012

Catalog

Books, media, physical & digital resources

See catalog results

Searchworks

Select search scope, currently: Articles Catalog books, media & more in Jio Institute collections Articles journal articles & other e-resources

Search

Search Constraints

Refine your results

Search Limiters

Topic

Publication Year Range

Publication Type

Journal

Database

Publisher

42 results on '"Jean-Marie Bluet"'

Search Results

Catalog

Select search scope, currently: Articles

Catalog

books, media & more in Jio Institute collections

Articles

journal articles & other e-resources