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Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman spectroscopy Imaging and Photoluminescence Spectroscopy Imaging
- Source :
- Materials Science Forum, Materials Science Forum, Trans Tech Publications Inc., 2003, 433-436, pp. 265-268. ⟨10.4028/www.scientific.net/MSF.433-436.265⟩
- Publication Year :
- 2003
- Publisher :
- HAL CCSD, 2003.
-
Abstract
- International audience; Reflection synchrotron topography, integrated photoluminescence imaging and Raman spectroscopy imaging have been performed on a 4H-SiC slice. The three methods give complementary information on the defects in the crystal. The differences between the observations are discussed.
- Subjects :
- 010302 applied physics
Materials science
Photoluminescence
business.industry
Mechanical Engineering
Synchrotron topography
scanning photoluminescence
[CHIM.MATE]Chemical Sciences/Material chemistry
Condensed Matter Physics
01 natural sciences
Synchrotron
law.invention
010309 optics
symbols.namesake
Mechanics of Materials
law
0103 physical sciences
Raman spectroscopy
symbols
Optoelectronics
General Materials Science
business
Spectroscopy
Subjects
Details
- Language :
- English
- ISSN :
- 02555476 and 16629760
- Database :
- OpenAIRE
- Journal :
- Materials Science Forum, Materials Science Forum, Trans Tech Publications Inc., 2003, 433-436, pp. 265-268. ⟨10.4028/www.scientific.net/MSF.433-436.265⟩
- Accession number :
- edsair.doi.dedup.....07d69bf48761e0f233cc522b165e44fe
- Full Text :
- https://doi.org/10.4028/www.scientific.net/MSF.433-436.265⟩