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3. High In content nitride sub-micrometer platelet arrays for long wavelength optical applications.

4. Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process.

5. Ohmic Contact to p -Type GaN Enabled by Post-Growth Diffusion of Magnesium.

6. Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach.

7. Non-polar true-lateral GaN power diodes on foreign substrates.

9. Simultaneous Growth of Various InGaN/GaN Core‐Shell Microstructures for Color Tunable Device Applications.

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