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Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process.
- Source :
-
Applied Physics Letters . 3/21/2022, Vol. 120 Issue 12, p1-6. 6p. - Publication Year :
- 2022
-
Abstract
- In this work, a deliberate etching-based top-down approach is proposed to fabricate the GaN nanorod (NR) Schottky barrier diode (SBD). As a key step during the fabrication, the impact of the wet-etching process on device performance is systematically studied. By virtue of the reduced surface states at the sidewall, the performance of NR SBD with the wet-etching process is substantially improved, delivering a forward turn-on voltage of 0.65 V, a current density of ∼10 kA/cm2 at 3 V, an ideality factor of 1.03, an ON/OFF current ratio of ∼1010, and no severe current collapse, along with a reverse breakdown voltage of 772 V. [ABSTRACT FROM AUTHOR]
- Subjects :
- *SCHOTTKY barrier diodes
*BREAKDOWN voltage
*SURFACE states
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 120
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 155966301
- Full Text :
- https://doi.org/10.1063/5.0083194