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1. Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT

Author: Ali Ammar, Mihai Lazar, Bertr Vergne, Sigo Scharnholz, Luong Viet Phung, Camille Sonneville, Christophe Raynaud, Herve Morel, Dominique Planson, Marcin Zielinski, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Lumière, nanomatériaux et nanotechnologies (L2n), Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS), Institut franco-allemand de recherches de Saint-Louis (ISL), DGA-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), NOVASIC, NOVASiC, and ANR-18-CE05-0020,HV-PhotoSw,Interrupteurs à haute tension à commande optique(2018)
Subjects: I-V characteristics, blocking voltage, 4H-SiC BJT, TCAD modeling, Bipolar Devices, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract: International audience; In this article, a high power 4H-SiC NPN BJT is demonstrated with a blocking voltage greater than 10 kV when its theoretical value is around 13 kV. The device design was extracted from a previous reported model and a fabrication process with eleven mask levels was performed. The maximum recorded common-emitter current gain is 20 at a current density 178 A/cm 2 .
Published: 2022
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2. CVD Growth of Graphene on SiC (0001): Influence of Substrate Offcut

Author: Adrien Michon, Maxime Bayle, Benoit Jouault, Matthieu Paillet, L. Nguyen, Marcin Zielinski, Yvon Cordier, Roy Dagher, Marc Portail, Thierry Chassagne, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), NOVASiC, and NOVASiC, Savoie Technolac
Subjects: Materials science, Nanotechnology, 02 engineering and technology, Substrate (electronics), Chemical vapor deposition, 01 natural sciences, law.invention, symbols.namesake, chemistry.chemical_compound, law, 0103 physical sciences, Silicon carbide, General Materials Science, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS, Graphene oxide paper, 010302 applied physics, Graphene, Atomic force microscopy, Mechanical Engineering, 021001 nanoscience & nanotechnology, Condensed Matter Physics, chemistry, Mechanics of Materials, symbols, 0210 nano-technology, Raman spectroscopy, Graphene nanoribbons
Abstract: In this study we report the growth of graphene on different silicon carbide substrates by chemical vapor deposition (CVD) in order to understand the influence of the substrate offcut on the graphene layers. For this purpose, graphene was grown on substrates with different offcuts, under hydrogen-argon atmosphere, and analyzed using AFM, LEED and Raman spectroscopy. We discuss the morphology and strain in graphene, and finally the ideal offcut for graphene growth.
Published: 2017
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3. Influence of Growth Temperature on Site Competition Effects During Chemical Vapor Deposition of 4H-SiC Layers

Author: Hervé Peyre, Marc Portail, Roxana Arvinte, Thierry Chassagne, Adrien Michon, Marcin Zielinski, Sylvie Contreras, Sandrine Juillaguet, NOVASiC, NOVASiC, Savoie Technolac, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Semi-conducteurs: Graphène, Grand gap & Photovoltaïque (SMC), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, media_common.quotation_subject, education, chemistry.chemical_element, 02 engineering and technology, Chemical vapor deposition, Epitaxy, 01 natural sciences, Competition (biology), stomatognathic system, Aluminium, 0103 physical sciences, Thermal, General Materials Science, P type doping, health care economics and organizations, media_common, 010302 applied physics, Dopant, Mechanical Engineering, technology, industry, and agriculture, 021001 nanoscience & nanotechnology, Condensed Matter Physics, chemistry, Chemical engineering, Mechanics of Materials, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology, Carbon
Abstract: After presenting an exhaustive experimental study of aluminum incorporation in epitaxial 4H-SiC and 3CSiC films grown by chemical vapor deposition (CVD), we focalize once more on what is called site competition effects. We observed that the influence of C/Si ratio on dopant (Al, N) incorporation in SiC was qualitatively different depending on whether the growth experiments were performed in “low temperature” (LT) or “high temperature” (HT) regime. Partial explanation of observed phenomena basing on thermal evolution of carbon coverage of SiC surface is proposed.
Published: 2016

4. Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates

Author: sylvie contreras, Leszek Konczewicz, Roxana Arvinte, Herve Peyre, Thierry Chassagne, Marcin Zielinski, Sandrine Juillaguet, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Semi-conducteurs: Graphène, Grand gap & Photovoltaïque (SMC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), NOVASiC, Savoie Technolac, and NOVASiC
Subjects: [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Abstract: International audience; Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates
Published: 2016

5. Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers

Author: Thierry Chassagne, Adrien Michon, Pawel Kwasnicki, Roxana Arvinte, Marcin Zielinski, Hervé Peyre, Marc Portail, Sandrine Juillaguet, NOVASiC, Savoie Technolac, NOVASiC, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Semi-conducteurs: Graphène, Grand gap & Photovoltaïque (SMC), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, Growth pressure, Materials science, Dopant, Mechanical Engineering, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Chemical vapor deposition, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, Volumetric flow rate, Secondary ion mass spectrometry, chemistry, Mechanics of Materials, Aluminium, 0103 physical sciences, General Materials Science, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology
Abstract: In the present contribution, the trends in voluntary incorporation of aluminum in 4H-SiC homoepitaxial films are investigated. The films were grown on Si-and C-face 4H-SiC 8°off substrates by chemical vapor deposition (CVD) in a horizontal, hot wall CVD reactor. Secondary Ion Mass Spectrometry (SIMS) and capacitance-voltage (C-V) measurements were used to determine the Al incorporation in the samples. The influence of Trimethylaluminum (TMA) flow rate, growth temperature, growth pressure and C/Si ratio on the dopant incorporation was studied.
Published: 2013
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6. Original 3C-SiC micro-structure on a 3C-SiC pseudo-substrate

Author: Marc Portail, M. Zielinski, Daniel Alquier, Jean-François Michaud, T. Chassagne, GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), NOVASiC, Savoie Technolac, NOVASiC, Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS), GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) ( GREMAN - UMR 7347 ), Université de Tours-Institut National des Sciences Appliquées - Centre Val de Loire ( INSA CVL ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), Centre de recherche sur l'hétéroepitaxie et ses applications ( CRHEA ), Université Nice Sophia Antipolis ( UNS ), and Université Côte d'Azur ( UCA ) -Université Côte d'Azur ( UCA ) -Centre National de la Recherche Scientifique ( CNRS )
Subjects: Materials science, Silicon, LPCVD, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Chemical vapor deposition, Substrate (electronics), 01 natural sciences, Monocrystalline silicon, chemistry.chemical_compound, Etching (microfabrication), 0103 physical sciences, Silicon carbide, Electrical and Electronic Engineering, Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, business.industry, Membrane, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Micromachining, Surface micromachining, chemistry, 3C–SiC, Optoelectronics, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, Micro-structure
Abstract: International audience; Among the different silicon carbide polytypes, 3C–SiC is very interesting for Micro-Electro-MechanicalSystems (MEMS) applications. This interest could beneﬁt from the development of multi stacked Si/SiC heterostructures as illustrated by the achievement of a continuous silicon monocrystalline thin ﬁlm on 3C–SiC epilayers deposited on (1 0 0) silicon substrates. Based on this recent result, an original monocrystalline 3C–SiC/Si/3C-SiC/Si hetero-structure has been developed by Low Pressure Chemical Vapor Deposition with a two-step process. This kind of structure allows the selective etching of the silicon epilayer in order to deﬁne an original 3C–SiC micro-structure. By wet etching, the remaining silicon ﬁlm, used as a sacriﬁcial layer, can be then etched, resulting in a monocrystalline 3C-SiC membrane on a 3C-SiC pseudosubstrate. This new and original approach opens the ﬁeld for future MEMS devices.
Published: 2013
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7. Aluminum nitride homoepitaxial growth on polar and non-polar AlN PVT substrates by high temperature CVD (HTCVD)

Author: Hugues Mank, Elisabeth Blanquet, Michel Pons, A. Claudel, Sorana Luca, G. Berthomé, D. Pique, Raphaël Boichot, Yann Chowanek, Alexandre Crisci, Didier Chaussende, Advanced CERamics Deposition (ACERDE), Institut Polytechnique de Grenoble - Grenoble Institute of Technology-ACERDE, Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), NOVASIC, NOVASiC, Institut de biologie et chimie des protéines [Lyon] (IBCP), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), and Champion, Yannick
Subjects: 010302 applied physics, [CHIM.MATE] Chemical Sciences/Material chemistry, Materials science, Band gap, business.industry, 02 engineering and technology, [CHIM.MATE]Chemical Sciences/Material chemistry, Nitride, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, 7. Clean energy, law.invention, Thermal conductivity, Semiconductor, law, Electrical resistivity and conductivity, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Deposition (law), ComputingMilieux_MISCELLANEOUS, Light-emitting diode
Abstract: Due to its wide bandgap (6.2 eV), its high thermal conductivity (3.3 WK-1cm-1) and high electrical resistivity (1013 Ωcm), AlN is a very expected III-N semiconductor for applications in high power electronics (HEMTs) and optoelectronics (UV LEDs). In this work, the homoepitaxial growth of aluminum nitride on polar and non-polar AlN PVT seeds by HTCVD is studied. From our knowledge, the AlN homoepitaxial growth by HVPE or HTCVD on polar and non-polar bulk AlN substrates has not been reported. The potential of investigation in this new range of experiments conditions, i.e. high temperature and high growth rate, as well as the deposition of non-polar AlN crystals (Paskova, Phys. Status Solidi B 245(6), 1011 (2008) and Schwarz and Kneissl, Phys. Status Solidi RRL 1(3), A44 (2007) [1, 2]) is very promising for epitaxial growth and could extend the field of applications (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Published: 2011

8. Quantum dot to quantum wire transition of m-plane GaN islands

Author: Julien Renard, Catherine Bougerol, B. Amstatt, Bruno Gayral, Bruno Daudin, Edith Bellet-Amalric, Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), NOVASIC, NOVASiC, Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF), Nanophysique et Semiconducteurs (NEEL - NPSC), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Condensed matter physics, Superlattice, Quantum wire, Quantum point contact, Elastic energy, Nanowire, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 01 natural sciences, Electronic, Optical and Magnetic Materials, Quantum dot laser, Quantum dot, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 68.55.ag, 81.15.Hi, 010306 general physics, 0210 nano-technology, Quantum
Abstract: International audience; Structural studies of m-plane GaN quantum dots and quantum wires are presented. A shape transition responsible for the evolution of quantum dots into quantum wires is put in evidence and shown to depend on the amount of material deposited. In addition, it is established that vertical correlation of successive nanostructure planes may also induce the dot-wire shape transition. Consistent with theoretical predictions, it is proposed that the shape transition results from an elastic energy minimization process made possible by an easy adatom diffusion along [11-20] direction.
Published: 2009
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9. Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor

Author: Marc Portail, Thierry Chassagne, Marcin Zielinski, Sandrine Juillaguet, Hervé Peyre, NOVASiC, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), NOVASIC, Groupe d'étude des semiconducteurs (GES), and Centre National de la Recherche Scientifique (CNRS)-Université Montpellier 2 - Sciences et Techniques (UM2)
Subjects: SIC FILMS, STRAIN, Silicon, Analytical chemistry, INFRARED REFLECTANCE, chemistry.chemical_element, Mineralogy, chemical vapor deposition processes, 02 engineering and technology, Chemical vapor deposition, doping, Epitaxy, 01 natural sciences, LAYERS, Inorganic Chemistry, stresses, silicon carbide, 0103 physical sciences, Materials Chemistry, SILICON-CARBIDE, Wafer, Thin film, 010302 applied physics, Crystallography, Dopant, Chemistry, Doping, HOMOEPITAXIAL GROWTH, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Nitrogen, CRYSTALS, Keywords-Plus = CHEMICAL-VAPOR-DEPOSITION, EPITAXIAL-GROWTH, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], hot wall epitaxy, 0210 nano-technology, 3C
Abstract: International audience; The 3C-SiC heteroepitaxial layers, voluntary doped with nitrogen, were grown by hot-wall chemical vapor deposition (CVD) on (111) and (10 0) oriented silicon substrates. The dependence of dopant incorporation on nitrogen flow rate, C/Si ratio, growth rate, growth temperature and reactor pressure has been investigated. The site competition between nitrogen and carbon and the doping efficiency in (111) and (100) oriented layers has been thoroughly studied. The reduction of the band gap energy as well as the modification of the infrared reflectivity has been observed at high doping level. Both effects confirm the substitutional character of nitrogen incorporation. Finally, a reduction of the tensile curvature of the wafer with increasing nitrogen doping has been stated. (C) 2008 Elsevier B.V. All rights reserved.
Published: 2008
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10. Croissance de semi-conducteurs à grand gap

Author: Dedulle, Jean-Marc, CHAUSSENDE, D., Madar, R., Pons, M., BLANQUET, E., BAILLET, F., Chichignoud, G., Ucar-Morais, M., Claudel, A., Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG), NOVASIC, NOVASiC, Association Française de Mécanique, and Service irevues, irevues
Subjects: PVT / CVD, Modélisation, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, Croissance SiC / AlN, [PHYS.MECA]Physics [physics]/Mechanics [physics], [CHIM.MATE]Chemical Sciences/Material chemistry, [PHYS.MECA] Physics [physics]/Mechanics [physics]
Abstract: Colloque avec actes et comité de lecture. Internationale.; International audience; La modélisation et la simulation des procédés de croissance tel que le transport physique en phase vapeur (PVT), le dépôt chimique en phase vapeur (CVD ou HTCVD) et les techniques hybrides (CFPVT), sont suffisamment au point pour être utilisées comme des outils de compréhension des phénomènes physiques couplés et comme des outils de conception de nouveaux procédés et d'optimisation de procédés existants. La modélisation des procédés d'élaboration rassemble plusieurs voies physico-chimiques de complexité variable, depuis des études thermodynamiques et/ou cinétiques jusqu'aux transferts simultanés de matière et de chaleur couplées avec les bases de données et propriétés thermodynamiques et/ou cinétiques et de transport. Différentes voies de modélisation sont utilisées, thermodynamiques, cinétique ou transfert de masse, de façon couplée ou découplée, permettant de visualiser l'évolution de la croissance et ainsi comprendre le rôle complexe et fortement couplé des phénomènes.
Published: 2007

11. Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding

Author: Michel Pons, Catherine Moisson, Michel Mermoux, Elisabeth Blanquet, Jean-Marie Bluet, Fabrice Letertre, Guy Chichignoud, Patrick Chaudouët, Roland Madar, M Anikin, Laurent Auvray, Etienne Pernot, Laboratoire de thermodynamique et physico-chimie métallurgiques (LTPCM), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG), Laboratoire de physique de la matière (LPM), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Electrochimie et de Physico-chimie des Matériaux et des Interfaces (LEPMI ), Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Joseph Fourier - Grenoble 1 (UJF)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), NOVASIC, NOVASiC, and SOITEC
Subjects: Materials science, Silicon, Wafer bonding, chemistry.chemical_element, Polishing, bulk crystal growth, 02 engineering and technology, Surface finish, 010402 general chemistry, 01 natural sciences, chemistry.chemical_compound, Silicon carbide, Surface roughness, General Materials Science, Wafer, Ceramic, Composite material, Mechanical Engineering, [CHIM.MATE]Chemical Sciences/Material chemistry, Polycrystalline SiC, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 0104 chemical sciences, Crystallography, chemistry, Mechanics of Materials, visual_art, wafer-bonding, visual_art.visual_art_medium, 0210 nano-technology
Abstract: International audience; The transfer by wafer-bonding of single-crystalline SiC thin films to a polycrystalline SiC support to obtain a “quasi-wafer” is an attractive way for lowering the cost of silicon carbide wafers. Such a process needs high quality polycrystalline substrates, with controlled and high-level bulk properties (thermal conductivity, electrical resistivity) and with very low surface roughness and surface bowing. Currently, polycrystalline SiC wafers which are available are siliconized SiC or CVD processed SiC wafers. Siliconized ceramic wafers are very heterogeneous (mixture of 3C, 6H, 15R and silicon), while CVD ones are of better quality (homogeneous and textured 3C). However neither the siliconized SiC nor the CVD SiC can be CMP polished with low roughness over large dimension. In this paper, wafers with large and textured grains (&gt ;1cm) are processed and characterized. The polishing of such structures is studied and optimized to obtain low surface roughness. To meet these requirements high temperature processes used for single crystal growth were selected. Structural investigations performed on the grown ingots showed an important influence of the used seed since no preferential crystallographic orientation was observed during the growth. The final polishing quality was of high level but step heights were observed between grains.
Published: 2006
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12. Optical mapping of aluminum doped p-type SiC wafers

Author: Laurent Auvray, Peter J. Wellmann, Thomas Straubinger, Sakwe Aloysius Sakwe, Aurelie Thuaire, Ralf R. Muller, Ulrike Künecke, Alexandre Crisci, Jean Camassel, Michel Pons, Michel Mermoux, Department of Materials Science 6, Friedrich-Alexander Universität Erlangen-Nürnberg (FAU), Laboratoire de thermodynamique et physico-chimie métallurgiques (LTPCM), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG), Laboratoire d'Electrochimie et de Physico-chimie des Matériaux et des Interfaces (LEPMI ), Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Joseph Fourier - Grenoble 1 (UJF)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), NOVASIC, NOVASiC, Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Groupe d'étude des semiconducteurs (GES), and Centre National de la Recherche Scientifique (CNRS)-Université Montpellier 2 - Sciences et Techniques (UM2)
Subjects: Materials science, Opacity, Analytical chemistry, chemistry.chemical_element, Physics::Optics, 02 engineering and technology, symbols.namesake, Condensed Matter::Materials Science, Aluminium, Homogeneity (physics), Materials Chemistry, Wafer, Electrical and Electronic Engineering, Birefringence, business.industry, 020502 materials, Doping, Surfaces and Interfaces, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, 0205 materials engineering, chemistry, symbols, Optoelectronics, Charge carrier, 0210 nano-technology, business, Raman spectroscopy
Abstract: International audience; We discuss the application of optical techniques to address the spatial distribution of electronic properties of highly aluminum doped p-type SiC wafers; optical techniques are superior over their electrical counterparts in a sense that they are non-destructive. While absorption and birefringence mapping are powerful tools to determine the homogeneity of charge carrier concentration and defects in n-type SiC, respectively, the same methods fail in highly p-type doped SiC due to the opaque nature of the latter. Therefore reflective methods like Raman spectroscopy and low temperature photoluminescence have to be applied in order to address electronic properties by optical techniques.
Published: 2005
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13. ZnO homoepitaxy on the O polar face of hydrothermal & melt-grown substrates by pulsed laser deposition

Author: Rogers, David J., Ferecteh Hosseini-Teherani, Alain Largeteau, Gérard Demazeau, Moisson, C., Daniel Turover, Nause, J., Garry, G., Kling, R., Gruber, T., Waag, A., Jonard, F., Pierre Galtier, Lusson, A., Monteiro, T., Soares, M., Neves, A., Carmo, M. C., Gilles Lerondel, Christophe Hubert, VU VAN, Jean-Baptiste, Nanovation SARL, Laboratoire de Nanotechnologie et d'Instrumentation Optique (LNIO), Institut Charles Delaunay (ICD), Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS), Institut de Chimie de la Matière Condensée de Bordeaux (ICMCB), Université de Bordeaux (UB)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Chimie du Solide, Université de Bordeaux (UB)-Centre National de la Recherche Scientifique (CNRS), NOVASIC, NOVASiC, SILSEF SAS, Cermet Inc., Thales Research and Technologies [Orsay] (TRT), THALES [France], Department of Semiconductor Physics, Universität Ulm - Ulm University [Ulm, Allemagne], Technische Universität Braunschweig = Technical University of Braunschweig [Braunschweig], Agrosphere Inst., IBG-3, Inst. of Bio-geosciences, Forschungszentrum Jülich GmbH | Centre de recherche de Juliers, Helmholtz-Gemeinschaft = Helmholtz Association-Helmholtz-Gemeinschaft = Helmholtz Association, Unité de recherche Pharmacologie-Toxicologie (UPT), Institut National de la Recherche Agronomique (INRA), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université de Bordeaux (UB), and THALES
Subjects: [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2005

14. Characterization of thick 2-inch 4H-SiC layers grown by the Continuous Feed - Physical Vapor Transport method

Author: Chaussende, Didier, Balloud, Carole, Auvray, Laurent, Baillet, Francis, Zielinski, Marcin, Juillaguet, Sandrine, Mermoux, Michel, Pernot, Etienne, Camassel, Jean, Pons, Michel, Madar, Roland, NOVASIC, NOVASiC, Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Groupe d'étude des semiconducteurs (GES), Centre National de la Recherche Scientifique (CNRS)-Université Montpellier 2 - Sciences et Techniques (UM2), Laboratoire de thermodynamique et physico-chimie métallurgiques (LTPCM), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG), Laboratoire d'Electrochimie et de Physico-chimie des Matériaux et des Interfaces (LEPMI ), and Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Joseph Fourier - Grenoble 1 (UJF)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)
Subjects: PVT, 4H-SiC, Thick layers, SWBXT, [CHIM.MATE]Chemical Sciences/Material chemistry, SIMS, Photoluminescence
Abstract: International audience; We present the first investigation of 2 inch diameter 0.5 mm thick 4H-SiC layers grown by the CF-PVT (Continuous Feed-Physical Vapor Transport) method. From Synchrotron White Beam X-Ray Topography we show that no new defect is generated in the CF-PVT material with respect to the 4H-SiC seed. We also show that a large strain takes place at the layer to seed interface which probably comes from the difference in doping level and thus in lattice parameter between the layer and the seed. From Raman experiments we demonstrate a high structural uniformity and low residual doping level. This is a surprising result which comes despite the lack of sophisticated purification procedure. To get confirmation, we have performed SIMS and LTPL investigations.
Published: 2004
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15. Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman spectroscopy Imaging and Photoluminescence Spectroscopy Imaging

Author: Michel Pons, Michel Mermoux, Roland Madar, Jean-Marie Bluet, M Anikin, Etienne Pernot, Didier Chaussende, I. El Harrouni, Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique de la matière (LPM), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Electrochimie et de Physico-chimie des Matériaux et des Interfaces (LEPMI ), Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Joseph Fourier - Grenoble 1 (UJF)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), NOVASIC, NOVASiC, Laboratoire de thermodynamique et physico-chimie métallurgiques (LTPCM), and Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)
Subjects: 010302 applied physics, Materials science, Photoluminescence, business.industry, Mechanical Engineering, Synchrotron topography, scanning photoluminescence, [CHIM.MATE]Chemical Sciences/Material chemistry, Condensed Matter Physics, 01 natural sciences, Synchrotron, law.invention, 010309 optics, symbols.namesake, Mechanics of Materials, law, 0103 physical sciences, Raman spectroscopy, symbols, Optoelectronics, General Materials Science, business, Spectroscopy
Abstract: International audience; Reflection synchrotron topography, integrated photoluminescence imaging and Raman spectroscopy imaging have been performed on a 4H-SiC slice. The three methods give complementary information on the defects in the crystal. The differences between the observations are discussed.
Published: 2003
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16. Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

Author: Chassagne, T. [NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac (France)]
Published: 2013
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17. Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

Author: Chassagne, T [NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac (France)]
Published: 2010
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18. Advantages and challenges of Plasma Immersion Ion Implantation for Power devices manufacturing on Si, SiC and GaN using PULSION ® tool

Author: Laurent Roux, Philippe Godignon, Moriz Jelinek, Marcin Zielinski, Yohann Spiegel, Frank Torregrosa, Gael Borvon, Werner Schustereder, Thomas Wuebben, Guillaume Sempere, Frederic Morancho, Ion Beam Services (IBS), Infineon Technologies AG [München], Centro Nacional de Microelectronica [Spain] (CNM), NOVASiC, Équipe Intégration de Systèmes de Gestion de l'Énergie (LAAS-ISGE), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Ion Beam Services, industriel, Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées
Subjects: Materials science, Silicon, Plasma Immersion Ion Implantation, chemistry.chemical_element, Gallium nitride, 02 engineering and technology, High-electron-mobility transistor, 01 natural sciences, chemistry.chemical_compound, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Silicon carbide, Hardware_INTEGRATEDCIRCUITS, 010302 applied physics, business.industry, 020208 electrical & electronic engineering, Doping, Wide-bandgap semiconductor, Ion Implantation, Plasma Doping, Plasma-immersion ion implantation, Power devices, [SPI.TRON]Engineering Sciences [physics]/Electronics, Ion implantation, chemistry, Optoelectronics, business
Abstract: International audience; Thanks to its high throughput and low cost of ownership Plasma Immersion Ion Implantation (or Plasma Doping) has been widely used for Memory device fabrication. Its ability to implant very high doses in shallow layers, makes it a perfect tool for new material modification applications needed for advanced logic devices. Nevertheless, few works are reported for its uses in power device fabrication. The aim of this paper is to present several application cases where we studied the use of our PULSION® PIII tool for implantation in Silicon, Silicon Carbide and Gallium Nitride power devices. Benefits of PIII and challenges to overcome will be discussed for the following applications in silicon devices: High dose phosphorus and boron implantation for polysilicon gate doping and low dose doping of deep trench superjunction applications, contact plug doping for Silicon SFET devices and wall doping of deep shallow trenches for IGBTs. In addition possible applications for wide band gap materials will be discussed with an example of doping application for GaN HEMT, where PIII allowed to make the first demonstration of a normally-off device. Finally some doping and material modification applications on SiC are presented.
Published: 2018
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19. Influence of Aluminum Incorporation on Mechanical Properties of 3C-SiC Epilayers

Author: Marc Portail, Thierry Chassagne, Jaweb Ben Messaoud, Jean-François Michaud, Marcin Zielinski, Daniel Alquier, GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS), NOVASiC, Savoie Technolac, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, Cantilever, Materials science, Mechanical Engineering, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, [PHYS.MECA.ACOU]Physics [physics]/Mechanics [physics]/Acoustics [physics.class-ph], chemistry, Mechanics of Materials, Aluminium, Deflection (engineering), 0103 physical sciences, General Materials Science, P type doping, Composite material, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract: The silicon carbide cubic polytype (3C-SiC) is perfectly appropriate to fabricate microelectromechanical systems. However, for such applications, the stress can largely influence both the fabrication of 3C‑SiC‑based microsystems and their related mechanical properties. Accordingly, in this study, we investigated the influence of strong aluminum incorporation towards the mechanical properties of 3C-SiC epilayers grown on silicon substrates.
Published: 2017
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20. Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC( 001)

Author: Marc Portail, Thierry Chassagne, Philippe Vennéguès, Rami Khazaka, Jean-François Michaud, Marcin Zielinski, Daniel Alquier, Marius Grundmann, Université François Rabelais, GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Institut für Experimentelle Physik II, Universität Leipzig [Leipzig], NOVASiC, Savoie Technolac, and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Physics and Astronomy (miscellaneous), 02 engineering and technology, Substrate (electronics), Surface finish, Chemical vapor deposition, Epitaxy, 01 natural sciences, Atomic force microscopy, 0103 physical sciences, Surface roughness, Thin film growth, ddc:530, Single domain, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, Condensed matter physics, Heterojunction, 021001 nanoscience & nanotechnology, Crystallography, Mirrors, Calabi Yau theory, Calabi Yau theory, Atomic force microscopy, Mirrors, Heterojunctions, Group theory, Carbides, 0210 nano-technology, Surface morphology, Layer (electronics)
Abstract: International audience; Structural and morphological characterization of a Si(110) film heteroepitaxied on 3C-SiC(001)/Si(001) on-axis template by chemical vapor deposition has been performed. An antiphase domain (APD) free 3C-SiC layer was used showing a roughness limited to 1 nm. This leads to a smooth Si film with a roughness of only 3 nm for a film thickness of 400 nm. The number of rotation domains in the Si(110) epilayer was found to be two on this APD-free 3C-SiC surface. This is attributed to the in-plane azimuthal misalignment of the mirror planes between the two involved materials. We prove that fundamentally no further reduction of the number of domains can be expected for the given substrate. We suggest the necessity to use off-axis substrates to eventually favor a single domain growth.
Published: 2016
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21. Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

Author: Roxana Arvinte, Sandrine Juillaguet, Konstantinos Zekentes, Thierry Chassagne, Maria Kayambaki, Leszek Konczewicz, Hervé Peyre, Pawel Kwasnicki, Marcin Zielinski, Sylvie Contreras, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Semi-conducteurs: Graphène, Grand gap & Photovoltaïque (SMC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and NOVASiC
Subjects: 010302 applied physics, Electron mobility, Range (particle radiation), Materials science, Mechanical Engineering, Doping, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 7. Clean energy, 01 natural sciences, Secondary Ion Mass Spectroscopy, chemistry, Electrical transport, Mechanics of Materials, Aluminium, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Materials Science, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology
Abstract: In the range 80 K-900 K, we have investigated the electrical properties of heavily aluminum in-situ doped, 4H-SiC samples. The temperature dependence of the hole concentration and Hall mobility was analyzed in the model taking into account heavy and light holes. The modelisation parameters were compared with experimental values of Secondary Ion Mass Spectroscopy (SIMS) and Capacitance-Voltage (CV) measurements.
Published: 2015
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22. Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

Author: W. Poirier, Marc Portail, Marcin Zielinski, Thierry Chassagne, Dimitrios Kazazis, F. Lafont, Félicien Schopfer, C. Consejo, O. Couturaud, Adrien Michon, Rebeca Ribeiro-Palau, Benoit Jouault, Laboratoire National de Métrologie et d'Essais [Trappes] (LNE ), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, Paul Scherrer Institute (PSI), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and NOVASiC, Savoie Technolac
Subjects: Length scale, Materials science, Fabrication, General Physics and Astronomy, FOS: Physical sciences, Nanotechnology, 02 engineering and technology, Chemical vapor deposition, Quantum Hall effect, 7. Clean energy, 01 natural sciences, Article, General Biochemistry, Genetics and Molecular Biology, law.invention, chemistry.chemical_compound, law, 0103 physical sciences, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Silicon carbide, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, Multidisciplinary, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, Graphene, General Chemistry, 021001 nanoscience & nanotechnology, Magnetic field, chemistry, Optoelectronics, Sublimation (phase transition), 0210 nano-technology, business
Abstract: Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within $10^{-9}$ in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by sublimation of Si, under higher magnetic fields. Here, we report on a device made of graphene grown by chemical vapour deposition on SiC which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron density devices., Comment: 12 pages, 8 figures
Published: 2015
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23. Comparative Study of n-Type 4H-SiC: Raman vs Photoluminescence Spectroscopy

Author: Roxana Arvinte, Sandrine Juillaguet, Pawel Kwasnicki, Hervé Peyre, Marcin Zielinski, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Semi-conducteurs: Graphène, Grand gap & Photovoltaïque (SMC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), and NOVASiC
Subjects: Low temperature photoluminescence, Materials science, Photoluminescence, Dopant, Mechanical Engineering, Nitrogen doping, Analytical chemistry, Infrared spectroscopy, Condensed Matter Physics, 3. Good health, symbols.namesake, Mechanics of Materials, symbols, General Materials Science, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Spectroscopy, Raman spectroscopy
Abstract: This paper presents a comparative optical and vibrational spectroscopy study of diversely n-type 4H-SiC epilayers. It is shown that in order to determine the nitrogen doping in a wide range (1016up to few 1019cm-3) the two techniques are complementary. Moreover only the LTPL provides the information about the compensation and nature of the dopant species.
Published: 2014
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24. Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition

Author: Roxana Arvinte, Veronique Soulière, Heiko B. Weber, Pawel Kwasnicki, Sandrine Juillaguet, Kassem Alassaad, Michael Krieger, Svetlana Beljakowa, Tomasz Sledziewski, Marcin Zielinski, Gabriel Ferro, Lehrstuhl für Theoretische Festkörperphysik, Friedrich-Alexander Universität Erlangen-Nürnberg (FAU), Laboratoire des Multimatériaux et Interfaces (LMI), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Groupe d'étude des semiconducteurs (GES), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), and NOVASiC
Subjects: Free electron model, Materials science, Deep-level transient spectroscopy, Analytical chemistry, chemistry.chemical_element, Germanium, 02 engineering and technology, Chemical vapor deposition, Conductivity, 01 natural sciences, Impurity, Hall effect, 0103 physical sciences, General Materials Science, 010302 applied physics, DLTS, Mechanical Engineering, Doping, technology, industry, and agriculture, 021001 nanoscience & nanotechnology, Condensed Matter Physics, admittance spectroscopy, Ge-doping, chemistry, Mechanics of Materials, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology, Hall mobility
Abstract: We have investigated the electrical properties of n-type 4H-SiC in-situ germanium-doped homoepitaxial layers grown by chemical vapor deposition. Germanium is an isoelectronic impurity and, therefore, not expected to contribute to the conductivity. However, Hall effect measurements taken on samples with and without germanium revealed an enhanced mobility by a factor of ≈2 at T ≈ 55 K in the germanium-doped sample despite equal free electron concentration and equal compensation. Deep level transient spectroscopy (DLTS) measurements taken on germanium-doped samples reveal negative peaks indicating the presence of charged extended defects.
Published: 2014
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25. Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy

Author: L. Bernardi, Franck Bocquet, R. Boubekri, David Martrou, Sai Jiao, Daniel Alquier, Laurent Nony, L. Couraud, Christian Loppacher, Sebastien Gauthier, Jean-François Michaud, J. Bouloc, Thierry Chassagne, Edmond Cambril, Marcin Zielinski, Marc Portail, Ali Madouri, Catherine Moisson, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), NOVASiC, Savoie Technolac, GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Université de Tours (UT)-Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Groupe NanoSciences (CEMES-GNS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), ANR-08-NANO-0017,NANOSENS,Cantilevers en carbure de silicium à piézorésistivité métallique pour microscopie à force atomique en mode dynamique à très haute fréquence(2008), Université Nice Sophia Antipolis (... - 2019) (UNS), Université de Tours-Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, Cantilever, Materials science, business.industry, Oscillation, Wide-bandgap semiconductor, General Physics and Astronomy, Nanotechnology, 02 engineering and technology, Chemical vapor deposition, 021001 nanoscience & nanotechnology, 01 natural sciences, Piezoresistive effect, Surface coating, 0103 physical sciences, Microscopy, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, Non-contact atomic force microscopy
Abstract: International audience; Cantilevers with resonance frequency ranging from 1 MHz to 100 MHz have been developed for dynamic atomic force microscopy. These sensors are fabricated from 3C-SiC epilayers grown on Si(100) substrates by low pressure chemical vapor deposition. They use an on-chip method both for driving and sensing the displacement of the cantilever. A first gold metallic loop deposited on top of the cantilever is used to drive its oscillation by electrothermal actuation. The sensing of this oscillation is performed by monitoring the resistance of a second Au loop. This metallic piezoresistive detection method has distinct advantages relative to more common semiconductor-based schemes. The optimization, design, fabrication, and characteristics of these cantilevers are discussed.
Published: 2014
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26. Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD

Author: Leszek Konczewicz, Pawel Kwasnicki, Roxana Arvinte, Sandrine Juillaguet, Jean Camassel, Marcin Zielinski, Sylvie Contreras, Hervé Peyre, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Semi-conducteurs: Graphène, Grand gap & Photovoltaïque (SMC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), and NOVASiC
Subjects: 010302 applied physics, Materials science, Phonon, Mechanical Engineering, Doping, Analytical chemistry, 02 engineering and technology, Low frequency, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Molecular physics, Secondary ion mass spectrometry, symbols.namesake, Mechanics of Materials, Atomic electron transition, 0103 physical sciences, symbols, General Materials Science, Wafer, Coherent anti-Stokes Raman spectroscopy, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology, Raman spectroscopy
Abstract: In this work, we focus on heavily aluminum (Al) doped 4H-SiC samples. We compare the effect of the Al concentration and Hall carrier concentration on the Raman spectra in a large frequency range. The Al concentration measured by Secondary Ion Mass Spectrometry ranged from 2×1016to 8.4×1019cm-3while the electrical measurement give a carrier concentration up to 5×1019Al×cm-3. On the Raman spectra, three different frequency domains have been analysed: i) at high frequency where we consider the change in longitudinal optical phonon-plasmon coupled mode; ii°) at low frequency where we consider the continuum of electronic transitions and iii°) finally, considering the Fano interference effect between the continuum of electronic transitions and the Folded Transverse Acoustic phonon modes. This analysis is applied to comment a Raman spectra mapping collected on a 4H-SiC 2 inch wafer.
Published: 2013
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27. A New Approach for AFM Cantilever Elaboration with 3C-SiC

Author: Thierry Chassagne, Marcin Zielinski, Daniel Alquier, Jean-François Michaud, Sai Jiao, Marc Portail, Ali Madouri, GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) ( GREMAN - UMR 7347 ), Université de Tours-Institut National des Sciences Appliquées - Centre Val de Loire ( INSA CVL ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), Centre de recherche sur l'hétéroepitaxie et ses applications ( CRHEA ), Université Nice Sophia Antipolis ( UNS ), Université Côte d'Azur ( UCA ) -Université Côte d'Azur ( UCA ) -Centre National de la Recherche Scientifique ( CNRS ), NOVASiC, Savoie Technolac, GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Cantilever, Materials science, Silicon, LPCVD, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, 01 natural sciences, Monocrystalline silicon, 0103 physical sciences, General Materials Science, Reactive-ion etching, Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 3C-SiC, 010302 applied physics, Microelectromechanical systems, Plasma etching, business.industry, Mechanical Engineering, 021001 nanoscience & nanotechnology, Condensed Matter Physics, chemistry, Mechanics of Materials, Tip, Optoelectronics, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Dry etching, AFM, 0210 nano-technology, business
Abstract: International audience; The recent achievement of a continuous silicon monocrystalline thin ﬁlm on 3C-SiC epilayers deposited on silicon substrates has opened the ﬁeld for new microstructures. In this work, this original hetero-structure is the basis for the elaboration of an entire cantilever for atomic force microscopy. The hetero-epitaxially grown silicon layer is used to deﬁne the tip of the cantilever fabricated from the 3C-SiC epilayer deposited on silicon. The complete cantilever is elaborated by plasma etching using a nickel mask. The use of a full dry etching process is very promising as it is independent of the crystalline orientation of the silicon epilayer contrary to process based on wet etching solutions. Moreover, based on such hetero-structure, new MEMS devices can be considered.
Published: 2012
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28. Experimental Observation and Analytical Model of the Stress Gradient Inversion in 3C-SiC Layers on Silicon

Author: Anne Elisabeth Bazin, Daniel Alquier, Marcin Zielinski, Thierry Chassagne, Marc Portail, Sai Jiao, Jean-François Michaud, Adrien Michon, GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) ( GREMAN - UMR 7347 ), Université de Tours-Institut National des Sciences Appliquées - Centre Val de Loire ( INSA CVL ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), NOVASiC, Savoie Technolac, STMicroelectronics [Tours] ( ST-TOURS ), Centre de recherche sur l'hétéroepitaxie et ses applications ( CRHEA ), Université Nice Sophia Antipolis ( UNS ), Université Côte d'Azur ( UCA ) -Université Côte d'Azur ( UCA ) -Centre National de la Recherche Scientifique ( CNRS ), GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Tours] (ST-TOURS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS)
Subjects: Silicon, Materials science, Bending, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, Epitaxy, 01 natural sciences, Stress (mechanics), Biaxial deformation, 0103 physical sciences, Stress relaxation, Thin film growth, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Composite material, 010302 applied physics, Stress strain relations, Deformation (mechanics), business.industry, Biaxial tensile test, Creep, 021001 nanoscience & nanotechnology, Semiconductor, chemistry, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, Thin film structure
Abstract: International audience; A detailed study of the static bending of micro-cantilevers has been performed for structures created from thin 3C-SiC films grown on (100) and (111) oriented silicon substrates. The biaxial stress distribution in the direction of the film normal has been evaluated based on analysis of the deformation profiles of clamped-free 3C-SiC beams of various thicknesses. Surprisingly, the obtained results clearly indicate that for as-grown samples of both studied orientations, the absolute value of the intrinsic stress increases from the interface to the surface of the film. We propose a simple analytical model of a relaxation process that explains in a quantitative way this unexpected phenomenon of stress gradient inversion.
Published: 2012
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29. Epitaxial graphene on cubic SiC'111.../Si'111... substrate

Author: Marc Portail, Abhay Shukla, Marcin Zielinski, Jacques Gierak, Jose Penuelas, A. Kahouli, P. Jegou, Abdelkarim Ouerghi, Laurent Travers, D. Lucot, Thierry Chassagne, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Service de Chimie Moléculaire (SCM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Institut de minéralogie et de physique des milieux condensés (IMPMC), Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Institut de Physique du Globe de Paris (IPG Paris)-Centre National de la Recherche Scientifique (CNRS), NOVASiC, Savoie Technolac, Université Nice Sophia Antipolis (... - 2019) (UNS), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université Pierre et Marie Curie - Paris 6 (UPMC)-IPG PARIS-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Physics and Astronomy (miscellaneous), Silicon, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Substrate (electronics), Epitaxy, 01 natural sciences, law.invention, chemistry.chemical_compound, symbols.namesake, X-ray photoelectron spectroscopy, [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], law, 0103 physical sciences, Silicon carbide, 010302 applied physics, Graphene, 021001 nanoscience & nanotechnology, Structural, Mechanical, Thermodynamic, and Optical Properties of Condensed Matter, chemistry, symbols, 0210 nano-technology, Raman spectroscopy, Graphene nanoribbons
Abstract: International audience; Epitaxial graphene films grown on silicon carbide SiC substrate by solid state graphitization is of great interest for electronic and optoelectronic applications. In this paper, we explore the properties of epitaxial graphene films on 3C-SiC 111 /Si 111 substrate. X-ray photoelectron spectroscopy and scanning tunneling microscopy were extensively used to characterize the quality of the few-layer graphene FLG surface. The Raman spectroscopy studies were useful in confirming the graphitic composition and measuring the thickness of the FLG samples
Published: 2010
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30. ZnO homoepitaxy on the O polar face of hydrothermal and melt-growth substrates by pulsed laser deposition

Author: Gilles Lerondel, Daniel Turover, A.J. Neves, F. Hosseini Teherani, Teresa Monteiro, R. Kling, Andreas Waag, François Jomard, D. J. Rogers, Alain Largeteau, G. Garry, M. C. Carmo, Marco Peres, J. Nause, Pierre Galtier, Christophe Hubert, Th. Gruber, M.J. Soares, C. Moisson, Alain Lusson, Gérard Demazeau, Nanovation SARL, Laboratoire de Nanotechnologie et d'Instrumentation Optique (LNIO), Institut Charles Delaunay (ICD), Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS), Institut de Chimie de la Matière Condensée de Bordeaux (ICMCB), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université de Bordeaux (UB), NOVASiC, Cermet Inc., Thales Research, Department of Semiconductor Physics, Universität Ulm - Ulm University [Ulm, Allemagne], Institute of Semiconductor Technology, Technische Universität Braunschweig = Technical University of Braunschweig [Braunschweig], Laboratoire de physique des solides et de cristallogénèse (LPSC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Physics Department, Universidade de Aveiro, and Université de Bordeaux (UB)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Photoluminescence, Materials science, Homoepitaxy ZnO, Analytical chemistry, 02 engineering and technology, Substrate (electronics), 01 natural sciences, Hydrothermal circulation, Pulsed laser deposition, structural and optical properties, Pulse laser deposition, Crystal, Chemical-mechanical planarization, 0103 physical sciences, Hydrothermal synthesis, Melt growth, General Materials Science, Films, 010302 applied physics, PACS: 81.10.h, 68.55.-a, 81.15.Fg, 78.20.-e, 61.82.Fk, 61.10.Nz, 68.37.Ps, Hydrothermal crystal growth, General Chemistry, ZnO films grown by PLD, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Full width at half maximum, Hydrothermal and melt-grown ZnO crystals, ZnO, 0210 nano-technology
Abstract: 2 cm diameter hydrothermal ZnO crystals were grown and then made into substrates using both mechanical and chemical-mechanical polishing (CMP). CMP polishing showed superior results with an (0002) Ω scan full width half maximum (FWHM) of 67 arcsec and an root mean square (RMS) roughness of 2 A. In comparison, commercial melt-grown substrates exhibited broader X-ray diffraction (XRD) linewidths with evidence of sub-surface crystal damage due to polishing, including a downward shift of c-lattice parameter. Secondary ion mass spectroscopy revealed strong Li, Fe, Co, Al and Si contamination in the hydrothermal crystals as opposed to the melt-grown substrates, for which glow discharge mass spectroscopy studies had reported high levels of Pb, Fe, Cd and Si. Low temperature photoluminescence (PL) studies indicated that the hydrothermal crystal had high defect and/or impurity concentrations compared with the melt-grown substrate. The dominant bound exciton for the melt-grown substrate was indexed to Al. ZnO films were grown using pulsed laser deposition. The melt-grown substrates gave superior results with XRD (0002) Ω and 2θ/Ω WHM of 124 and 34 arcsec, respectively. Atomic force microscope measurements indicated a low RMS roughness (1.9 nm) as confirmed by fringes in the XRD 2θ/Ω scan. It was suggested that the improvement in XRD response relative to the substrate might be due to “healing” of sub-surface polishing damage due to the elevated Ts used for the growth. Indeed the c-lattice parameter for the homoepitaxial layer on the melt-grown substrate had become that which would be expected for strain-free ZnO. Furthermore, the stability of the PL peak positions relative to bulk ZnO, confirmed that the films appear practically strain free.
Published: 2007
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31. Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization

Author: L Di Coccio, G. Feuillet, Th Billon, Elisabeth Blanquet, Francis Baillet, Etienne Pernot, Pierre Ferret, C Faure, Didier Chaussende, Roland Madar, Michel Mermoux, Michel Pons, Laboratoire de thermodynamique et physico-chimie métallurgiques (LTPCM), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), NOVASiC, Laboratoire d'Electrochimie et de Physico-chimie des Matériaux et des Interfaces (LEPMI ), Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Joseph Fourier - Grenoble 1 (UJF)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Fabrication, Process modeling, General Physics and Astronomy, Mineralogy, Silicon carbide, 010402 general chemistry, Epitaxy, 01 natural sciences, Modeling and simulation, chemistry.chemical_compound, 0103 physical sciences, Thin film, 010302 applied physics, Modeling, Surfaces and Interfaces, General Chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, 81.10.Bk Growth from vapor, 81.15.Gh Chemical vapor deposition, 47.70.Fw Chemically reactive flows, Condensed Matter Physics, Engineering physics, 0104 chemical sciences, Surfaces, Coatings and Films, Characterization (materials science), Bulk growth, chemistry, Heat transfer
Abstract: International audience; High temperature epitaxial growth processes for SiC bulk and thin films are reviewed from an academic point of view using heat and mass transfer modeling and simulation. The objective is to show that this modeling approach could provide further information to fabrication and characterization for the improvement of the knowledge of the growth history and to quantify the different phenomena leading to growth. Recent results of our integrated research program on SiC taking into account the fabrication, process modeling and characterization will be presented.
Published: 2003
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32. SiC Homoepitaxial Growth at Low Temperature by Vapor-Liquid-Solid Mechanism in Al-Si Melt

Author: François Cauwet, Gabriel Ferro, Christophe Jacquier, Yves Monteil, Didier Chaussende, Laboratoire des Multimatériaux et Interfaces (LMI), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and NOVASiC
Subjects: 010302 applied physics, Materials science, Silicon, Analytical chemistry, Mineralogy, chemistry.chemical_element, 02 engineering and technology, General Chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, Carbide, chemistry.chemical_compound, Temperature gradient, chemistry, Aluminium, Propane, 0103 physical sciences, General Materials Science, Vapor liquid, Vapor–liquid–solid method, 0210 nano-technology
Abstract: Homoepitaxial growth of SiC was successfully performed at a temperature as low as 1100 °C via a vapor-liquid-solid (VLS) mechanism where propane feeds an Al-Si droplet. This approach has several advantages compared to the conventional liquid-phase epitaxy (LPE) such as an easier mastering of the growth as no thermal gradient (vertical or radial) needs to be controlled. We observed however the formation at the surface of small crystals during the cooling. Some small nonwetted zones are also seen, but they occupy less than 1% of the sample area. Both defects were also present in LPE configuration.
Published: 2003
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33. Single atomic steps on SiC polished surfaces

Author: Didier Chaussende, Patrice Vicente, NOVASiC, and Chaussende, Didier
Subjects: 010302 applied physics, [CHIM.MATE] Chemical Sciences/Material chemistry, Materials science, business.industry, Nanotechnology, 02 engineering and technology, Substrate (electronics), [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, 7. Clean energy, Lattice mismatch, Thermal conductivity, 0103 physical sciences, Sapphire, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract: On-axis 4H-SiC and 6H-SiC are very promising material for respectively electronics and optoelectronics applications. Compared to GaN and sapphire, the reduced lattice mismatch between GaN and SiC combined with a high thermal conductivity makes 6H-SiC a good substrate for the growth of Group III-nitride epitaxial layers [1].
Published: 2002

34. Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si Heteroepitaxy.

Author: Scuderi V, Zielinski M, and La Via F
Abstract: In this paper, we used micro-Raman spectroscopy in cross-section to investigate the effect of different doping on the distribution of stress in the silicon substrate and the grown 3C-SiC film. The 3C-SiC films with a thickness up to 10 μm were grown on Si (100) substrates in a horizontal hot-wall chemical vapor deposition (CVD) reactor. To quantify the influence of doping on the stress distribution, samples were non-intentionally doped (NID, dopant incorporation below 10 16 cm -3 ), strongly n-type doped ([N] > 10 19 cm -3 ), or strongly p-type doped ([Al] > 10 19 cm -3 ). Sample NID was also grown on Si (111). In silicon (100), we observed that the stress at the interface is always compressive. In 3C-SiC, instead, we observed that the stress at the interface is always tensile and remains so in the first 4 µm. In the remaining 6 µm, the type of stress varies according to the doping. In particular, for 10 μm thick samples, the presence of an n-doped layer at the interface maximizes the stress in the silicon (~700 MPa) and in the 3C-SiC film (~250 MPa). In the presence of films grown on Si(111), 3C-SiC shows a compressive stress at the interface and then immediately becomes tensile following an oscillating trend with an average value of 412 MPa.
Published: 2023
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35. New Approaches and Understandings in the Growth of Cubic Silicon Carbide.

Author: La Via F, Zimbone M, Bongiorno C, La Magna A, Fisicaro G, Deretzis I, Scuderi V, Calabretta C, Giannazzo F, Zielinski M, Anzalone R, Mauceri M, Crippa D, Scalise E, Marzegalli A, Sarikov A, Miglio L, Jokubavicius V, Syväjärvi M, Yakimova R, Schuh P, Schöler M, Kollmuss M, and Wellmann P
Abstract: In this review paper, several new approaches about the 3C-SiC growth are been presented. In fact, despite the long research activity on 3C-SiC, no devices with good electrical characteristics have been obtained due to the high defect density and high level of stress. To overcome these problems, two different approaches have been used in the last years. From one side, several compliance substrates have been used to try to reduce both the defects and stress, while from another side, the first bulk growth has been performed to try to improve the quality of this material with respect to the heteroepitaxial one. From all these studies, a new understanding of the material defects has been obtained, as well as regarding all the interactions between defects and several growth parameters. This new knowledge will be the basis to solve the main issue of the 3C-SiC growth and reach the goal to obtain a material with low defects and low stress that would allow for realizing devices with extremely interesting characteristics.
Published: 2021
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36. Measurement of Residual Stress and Young's Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> and <100> Silicon.

Author: Sapienza S, Ferri M, Belsito L, Marini D, Zielinski M, La Via F, and Roncaglia A
Abstract: 3C-SiC is an emerging material for MEMS systems thanks to its outstanding mechanical properties (high Young's modulus and low density) that allow the device to be operated for a given geometry at higher frequency. The mechanical properties of this material depend strongly on the material quality, the defect density, and the stress. For this reason, the use of SiC in Si-based microelectromechanical system (MEMS) fabrication techniques has been very limited. In this work, the complete characterization of Young's modulus and residual stress of monocrystalline 3C-SiC layers with different doping types grown on <100> and <111> oriented silicon substrates is reported, using a combination of resonance frequency of double clamped beams and strain gauge. In this way, both the residual stress and the residual strain can be measured independently, and Young's modulus can be obtained by Hooke's law. From these measurements, it has been observed that Young's modulus depends on the thickness of the layer, the orientation, the doping, and the stress. Very good values of Young's modulus were obtained in this work, even for very thin layers (thinner than 1 μm), and this can give the opportunity to realize very sensitive strain sensors.
Published: 2021
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37. Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks.

Author: Schuh P, Steiner J, La Via F, Mauceri M, Zielinski M, and Wellmann PJ
Abstract: The growth of 3C-SiC shows technological challenges, such as high supersaturation, a silicon-rich gas phase and a high vertical temperature gradient. We have developed a transfer method creating high-quality 3C-SiC-on-SiC (100) seeding stacks, suitable for use in sublimation "sandwich" epitaxy (SE). This work presents simulation data on the change of supersaturation and the temperature gradient between source and seed for the bulk growth. A series of growth runs on increased source to seed distances was characterized by XRD and Raman spectroscopy. Results show a decrease in quality in terms of single-crystallinity with a decrease in supersaturation. Morphology analysis of as-grown material indicates an increasing protrusion dimension with increasing thickness. This effect limits the achievable maximal thickness. Additional polytype inclusions were observed, which began to occur with low supersaturation (S ≤ 0.06) and prolonged growth (increase of carbon gas-species).
Published: 2019
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38. Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth.

Author: Schuh P, la Via F, Mauceri M, Zielinski M, and Wellmann PJ
Abstract: We report on the reproducible growth of two inch 3C-SiC crystals using the transfer of chemical vapor deposition (CVD)-grown (100) oriented epitaxial layers. Additional experiments, in which the diameter of the free-standing layers is increased, are presented, indicating the upscale potential of this process. The nucleation and growth of cubic silicon carbide is supported by XRD and Raman measurements. The rocking curve data yield a full-width-at-half-maximum (FWHM) between 138 to 140 arc sec for such grown material. Analysis of the inbuilt stress of the bulk-like material shows no indications of any residual stress., Competing Interests: The authors declare no conflict of interest.
Published: 2019
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39. Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide.

Author: Lafont F, Ribeiro-Palau R, Kazazis D, Michon A, Couturaud O, Consejo C, Chassagne T, Zielinski M, Portail M, Jouault B, Schopfer F, and Poirier W
Abstract: Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10(-9) in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by Si sublimation, under higher magnetic fields. Here, we report on a graphene device grown by chemical vapour deposition on SiC, which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron-density devices.
Published: 2015
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40. Treatment of plantar warts with ultrasound.

Author: NOVASIC T
Subjects: Humans, Foot, Foot Diseases, Neoplasms, Papilloma therapy, Ultrasonic Therapy, Ultrasonics therapy, Warts
Published: 1960
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