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We have grown arrays of silver nanowires in pores of anodic alumina membranes (metamaterials with hyperbolic dispersion at λ ≥ 615 nm), spin coated them with the dye-doped polymer (HITC:PMMA), and studied the rates of radiative and nonradiative relaxation as well as the concentration quenching (Förster energy transfer to acceptors). The results were compared to those obtained on top of planar Ag films and glass (control samples). The strong spatial inhomogeneity of emission kinetics recorded in different spots across the sample and strong inhibition of the concentration quenching in arrays of Ag nanowires are among the most significant findings of this study.

Recent advancements in computing technologies coupled with the need to make sense of large amounts of raw data have renewed much interest in data-driven materials design and discovery. Traditional materials science research relies heavily on experimental data to gauge the properties of materials. However, this paradigm is purely based on trial and error and ongoing research can take decades to discover new materials. Data-driven modeling tools such as machine learning and its proven libraries can help speed up the materials' discovery process through the implementation of powerful algorithms on readily available material datasets mined from the ever-increasing private- and government-funded material databases. In this Perspective, we applied various machine learning models on tens of hundreds of thermoelectric compounds obtained from density functional theory calculation results. In our preliminary analysis, we made use of pymatgen and the powerful materials science library matminer to add and explore key material features that have the propensity to accurately predict our achievable target output. We evaluated the accuracy and performance of our models with the coefficient of determination (R2), the root mean square error, and K-fold cross-validation metrics and identified the most important descriptors for our materials. Finally, we reviewed the current state-of-the-art in data-driven thermoelectric materials' design and discovery, its current challenges, and prospects. [ABSTRACT FROM AUTHOR]

Thin-film transparent heaters (TFTHs) are gaining popularity in optoelectronics and a variety of domestic applications, including smart windows, car defrosters, and other devices. The deposition and characterization of TFTHs made of gallium-doped zinc oxide (GZO) are presented in this work. GZO thin films were deposited via pulsed laser deposition on glass substrates with varying oxygen partial pressures from 0 to 10 mTorr during deposition. The samples demonstrated very low sheet resistance values between 5 and 17 Ω/sq from 0 to 10 mTorr, respectively. UV/vis transmission spectra revealed that TFTHs have a high optical transparency above 80%. GZO-based TFTHs demonstrated a consistent and repeatable joule heating effect, with temperatures reaching 76 °C with a low input voltage of 10 V. This research could guide the future use of GZO as a transparent conducting oxide material for many potential cost-effective applications from low-powered electronics to lightweight and wearable devices. [ABSTRACT FROM AUTHOR]

A series of different high κ dielectrics such as HfO2, ZrO2, and Al2O3 thin films were studied as an alternative material for the possible replacement of traditional SiO2. These large areas, as well as conformal dielectrics thin films, were grown by the atomic layer deposition technique on a p-type silicon substrate at two different deposition temperatures (150 and 250 °C). Atomic force microscopic study reveals that the surface of the films is very smooth with a measured rms surface roughness value of less than 0.4 nm in some films. After the deposition of the high κ layer, a top metal electrode was deposited onto it to fabricate metal oxide semiconductor capacitor (MOSCAP) structures. The I–V curve reveals that the sample growth at high temperatures exhibits a high resistance value and lower leakage current densities. Frequency-dependent (100 kHz to 1 MHz) C–V characteristics of the MOSCAPs were studied steadily. Furthermore, we have prepared a metal oxide semiconductor field-effect transistor device with Al-doped ZnO as a channel material, and the electrical characteristic of the device was studied. The effect of growth temperature on the structure, surface morphology, crystallinity, capacitance, and dielectric properties of the high κ dielectrics was thoroughly analyzed through several measurement techniques, such as XRD, atomic force microscopy, semiconductor parameter analysis, and ultraviolet-visible spectroscopy. [ABSTRACT FROM AUTHOR]

Layered structure bismuth telluride and molybdenum disulfide thin films were successfully deposited on different substrates using radio-frequency magnetron sputtering technique. The structural, morphological, and thermoelectric transport properties of bismuth telluride and molybdenum disulfide thin films have been investigated systematically to fabricate high-efficient thermal energy harvesting thermoelectric device. The magnitude of the Seebeck coefficient of bismuth telluride thin films decreases with increase in film thickness. Bismuth telluride grown at 350 °C for 10 min, which is approximately 120 nm, displays a maximum Seebeck coefficient of −126 μV K−1 at 435 K. The performance shows strong temperature dependence when the films were deposited at 300 °C, 350 °C, and 400 °C. The power factor increases from 0.91 × 10−3 W/mK2 at 300 K to about 1.4 × 10−3 W/mK2 at 350 K. Molybdenum disulfide films show the positive Seebeck coefficient values and their Seebeck coefficient increases with film thickness. The AFM images of bismuth telluride thin films display a root-mean-square (rms) roughness of 32.3 nm and molybdenum disulfide thin films show an rms roughness of 6.99 nm when both films were deposited at 350 °C. The open-circuit voltage of the pn-junction thermoelectric generator (TEG) device increases with increase in ΔT to about 130 mV at ΔT = 120 °C. We have demonstrated a highly efficient pn-junction TEG device for waste heat recovery applications. [ABSTRACT FROM AUTHOR]

With their relative ease of production and coupled strong surface functionality and electrical conductivity properties, graphene oxide (GO) and reduced graphene oxide (rGO) are exciting, yet overlooked, graphene-like additive prospects for activated carbon (AC) electrodes in supercapacitors. In this work, we incorporated small amounts of synthesized GO and rGO in AC electrodes via a simple mixing procedure to explore their effects. In addition to materials characterizations, symmetric supercapacitors were made from these electrodes and tested across current densities ranging from 0.1–10 A g−1 and across 10,000 additional charge-discharge cycles at 2 A g−1. Performance measurements indicate that GO and rGO enhance the rate resistance and capacity, respectively, of AC electrodes, but these effects are modest and do not prevent increases in internal resistance over the course of 10,000 cycles. The overall ineffectuality of GO and rGO is reasoned to be due to their isolation and infrequency as a result of the relatively impotent distribution method used. [ABSTRACT FROM AUTHOR]

Vanadium oxide (VO2) thin films have drawn significant research and development interest in recent years because of their intriguing physical origin and wide range of functionalities useful for many potential applications, including infrared imaging, smart windows, and energy and information technologies. However, the growth of highly epitaxial films of VO2, with a sharp and distinct controllable transition, has remained a challenge. Here, we report the structural and electronic properties of high quality and reproducible epitaxial thin films of VO2, grown on c-axis oriented sapphire substrates using pulsed laser deposition at different deposition pressures and temperatures, followed by various annealing schedules. Our results demonstrate that the annealing of epitaxial VO2 films significantly enhances the Semiconductor to Metal Transition (SMT) to that of bulk VO2 transition. The effect of oxygen partial pressure during the growth of VO2 films creates a significant modulation of the SMT from around room temperature to as high as the theoretical value of 68 °C. We obtained a bulk order transition ≥104 while reducing the transition temperature close to 60 °C, which is comparatively less than the theoretical value of 68 °C, demonstrating a clear and drastic improvement in the SMT switching characteristics. The results reported here will open the door to fundamental studies of VO2, along with tuning of the transition temperatures for potential applications for multifunctional devices. [ABSTRACT FROM AUTHOR]

Substrate-induced electron energy band alignments of ultrathin molybdenum disulfide (MoS2) films are investigated using photoemission spectroscopy. Thin layer MoS2/Al2O3 and MoS2/ZrO2 interfaces show valence band offset (VBO) values of 3.21 eV and 2.77 eV, respectively. The corresponding conduction-band offset (CBO) values are 3.63 eV and 1.27 eV. Similarly, the calculated VBO and CBO values for an ultrathin layer of MoS2/SiO2 are estimated to be 4.25 and 2.91 eV, respectively. However, a very thick layer of MoS2 on Al2O3 and ZrO2 layers increases the CBO and VBO values by 0.31 eV and 0.2 eV, respectively, due to the shifting of the Mo 4dz2 band toward the Fermi level. The atomic force microscopy images show that the films are atomically smooth and favor the formation of a high-quality interface between the substrate and the film. The investigated luminescence spectra reveal that the MoS2 films show very strong interactions with different high-k surfaces, whereas the Raman spectrum is only weakly influenced by the different dielectric substrates. This interesting finding encourages the application of high-k oxide insulators as gate materials in MoS2-based complementary metal-oxide semiconductors and other electronic devices. [ABSTRACT FROM AUTHOR]

The drawbacks of common anodes in lithium-ion batteries (LIBs) and hybrid supercapacitors (HSCs), such as the high voltage plateau of Li4Ti5O12 (1.55 V vs. Li/Li+) and the moderate capacity of graphite (372 mAh-g-1), have established a need for better materials. Conversion materials, and in particular iron oxide and CaFe2O4 (CFO), have amassed recent attention as potential anode replacements. In this study, we evaluate the material and electrochemical effects of the solution combustion synthesis (SCS) of porous CFO across novel fuel-to-oxidizer ratios and calcination temperatures. We demonstrate that nearly doubling the amount of fuel used during synthesis increases capacities between 120 and 150% at high current densities (~ 1000 mA-g-1) and across 500 additional charging-discharging cycles, an effect brought on in part by enhanced compositional purity in these samples. However, in order to ensure long-term cyclic stability, it is necessary to also calcine porous CFO to 900 °C to enhance crystallite size, particle size and spacing, and compositional purity. [ABSTRACT FROM AUTHOR]

The addition of suitable metallic dopants into the indium or zinc oxide matrix is essential to obtain transparent conducting oxide (TCO) thin films for high-performance optoelectronics devices. However, scarcity of indium is one of the major challenges for the common use of indium doped tin oxide (ITO) as a TCO material for future state-of-the-art devices. To overcome the challenge, doped zinc oxide is used an alternative material for traditional ITO and retains both high transparency and electrical conductivity. One such potential material is gallium-doped zinc oxide (GZO). GZO thin films were deposited onto glass as well as Kapton substrates using the pulsed laser deposition technique. Structural, optical, and electro-thermal properties of these films were studied to assess the performance of the films as thin-film transparent heaters. The samples show a good transmittance value greater than 85% in the visible range of the electromagnetic spectrum. At room temperature, the electrical resistivity of GZO films showed a value of 110.46 × 10−4 Ω cm on glass and 2.90 × 10−4 Ω cm on the Kapton substrate, followed by a Joule heating effect, with temperatures reaching more than 120 °C at an applied voltage of ∼12 V. This high transparency, cost-effectiveness, low sheet resistance, and small surface roughness make GZO a unique and potential candidate for various practical applications not only as a transparent electrode but also as an indium free thin-film transparent heater and an affordable transparent conducting oxide in displays. [ABSTRACT FROM AUTHOR]

With a metal to insulator transition (MIT) temperature of ∼68 °C to 70 °C, which is close to room temperature (RT), vanadium oxide (VO2) has piqued interest in research communities for several applications, such as Mott-transistors and smart windows. This unique characteristic and multi-faceted application of VO2 makes it ideal for several fields, from consumer electronics to defense applications. However, despite this advantage over several other materials, VO2 has some serious shortcomings. In this paper, we attempt to address these issues, such as higher than RT transition temperature, metastability of the material, and its need for a separate heater layer to trigger the MIT, by using a stoichiometrically downgraded multi-layered structure that can both demonstrate the MIT property and serve as an embedded heater layer. This eliminates the need to use a system with a different material such as aluminum-doped zinc oxide. By using the multi-layered structure, we were able to achieve a transition temperature of ∼48 °C, which is ∼22 °C lower than the transition temperature of bulk VO2 films. We also noted a reduction of over 50% in transmission in the infra-red region by application of less than 15 V, as well as an enhancement of ∼10% in the visible region transmission beyond the MIT temperature, which demonstrates the potential of this structure to be used as an energy-efficient smart window device. [ABSTRACT FROM AUTHOR]

With the development of electronic devices towards miniaturization, light weight and integration, dielectric thin film-capacitors for recoverable energy storage applications have attracted ever-growing interests owing to their fast charging and discharging rate. In continuation to our investigations for achieving high energy density, we have grown lead free BaZr0.2Ti0.8O3 (BZT)/Ba0.7Ca0.3TiO3 (BCT) heterostructures and studied the structural, dielectric, ferroelectric and energy density characteristics. The BZT/BCT bilayer epitaxial heterostructures were grown on La0.67Sr0.33MnO3 (LSMO) buffered LaAlO3 (LAO) single crystal substrate by optimized pulsed laser deposition technique. The ferroelectric phase transition has been probed above room temperature with relaxor behavior. These nanostructures show high discharge and charge energy densities of 9.74 and 26.55 J/cm3, respectively. These heterostructures show high dielectric permittivity, large polarization and high energy density characteristics well above room temperature which may be useful for both high power and energy density device applications. [ABSTRACT FROM AUTHOR]

High quality ultrathin transition-metal dichalcogenide films and their Vander Waals heterostructures are very promising for fabrication of optoelectronic devices for their superior photovoltaic performance, extreme flexibility and long lifetime due to suitable band gap and excellent light absorption capability. Designing the appropriate and suitable band structures of these materials is crucial for its promising applications. Especially, thin molybdenum disulfide (MoS 2 ) film is further attractive as compare to its monolayer counterpart for broad-spectral photo-detectors and photovoltaic application. However, very little understanding regarding the underlying physics behind the photo-response behavior of thin MoS 2 films is known. Here, we demonstrate a large photovoltaic response in thin MoS 2 films which produces an enormous photo-generated carrier and enhance the photocurrent by forming a heterojunction with p-type Si substrate. MoS 2 based photovoltaic devices efficiently produce high short-circuit photocurrent values of 18 mA/cm 2 and reasonably high power-conversion efficiency up to 4.5%. The present work will provide valuable scientific input of layered MoS 2 films for other emerging optoelectronic applications. [ABSTRACT FROM AUTHOR]

Comprehensive and systematic electrical studies were performed on fabrication of high quality SiO2 thin films MOS capacitor using the robust, novel, and simple atomic layer deposition (ALD) technique using highly reactive ozone and tris (dimethylamino) silane (TDMAS) precursors. Ideal capacitance-voltage curve exhibits a very small frequency dispersion and hysteresis behavior of the SiO2 MOS capacitor grown at 1s TDMAS pulse, suggesting excellent interfacial quality and purity of the film as probed using x-ray photoelectron studies. The flat-band voltage of the device shifted from negative toward positive voltage axis with increase of TDMAS pulses from 0.2 to 2 s. Based on an equivalent oxide thickness point of view, all SiO2 films have gate leakage current density of (5.18 × 10-8 A/cm²) as well as high dielectric break down fields of more than (~10 MV/cm), which is better and comparable to that of thermally grown SiO2 at temperatures above 800°C. These appealing electrical properties of ALD grown SiO2 thin films enable its potential applications such as high-quality gate insulators for thin film MOS transistors, as well as insulators for sensor and nanostructures on nonsilicon substrates. [ABSTRACT FROM AUTHOR]

All-solid-state batteries (ASSBs) are gaining traction in the arena of energy storage due to their promising results in producing high energy density and long cycle life coupled with their capability of being safe. The key challenges facing ASSBs are low conductivity and slow charge transfer kinetics at the interface between the electrode and the solid electrolyte. Garnet solid-state electrolyte has shown promising results in improving the ion conductivity but still suffers from poor capacity retention and rate performance due to the interfacial resistance between the electrodes. To improve the interfacial resistance, we prepared a composite consisting of Li7La2.75Ca0.25Zr1.75Nb0.25O12 (LLCZN) garnet material as the ceramic, polyethylene oxide (PEO) as the polymer, and lithium hexafluorophosphate (LiPF6) as the salt. These compounds are mixed in a stoichiometric ratio and developed into a very thin disc-shaped solid electrolyte. The LLCZN provides a lithium-ion transport path to enhance the lithium-ion conduction during charging and discharging cycles, while the LiPF6 contributes more lithium ions via the transport path. The PEO matrix in the composite material aids in bonding the compounds together and creating a large contact area, thereby reducing the issue of large interfacial resistance. FESEM images show the porous nature of the electrolyte which promotes the movement of lithium ions through the electrolyte. The fabricated LLCZN/PEO/LiPF6 solid-state electrolyte shows outstanding electrochemical stability that remains at 130 mAh g−1 up to 150 charging and discharging cycles at 0.05 mA cm−2 current. All the specific capacities were calculated based on the mass of the cathode material (LiCoO2). In addition, the coin cell retains 85% discharge capacity up to 150 cycles with a Coulombic efficiency of approximately 98% and energy efficiency of 90% during the entire cycling process. [ABSTRACT FROM AUTHOR]

Artificial and engineered nanostructures expand the degrees of freedom with which one can manipulate the intricate interplay of light and matter. Certain nanostructural arrangements in the excited state enable the efficient electromagnetic coupling of propagating light with localized fields. Here, we demonstrate that light transmitted through a nanostructured metal thin film without any apertures can be significantly enhanced. Distinct asymmetric Fano resonances are observed in the zero-order transmission spectra using an incoherent light source. The transmission efficiency surpasses that of a metal thin film with the same area and thickness at the resonance maxima. The transmission minima and the sharp resonance maxima bear a strong resemblance to the extraordinary optical transmission observed in sub-wavelength nanohole array structures The resonance wavelength closely matches the nanostructural periodicity. The sensitivity of the resonances to the surrounding medium and the transmission efficiency demonstrate the potential for use in energy harvesting, imaging, optical processing and sensing applications. [ABSTRACT FROM AUTHOR]

We have demonstrated a novel platform of quantum dots (QDs) core-shell conjugated graphene oxide (GO) biosensor for effective protein detection. The advantage in making core shell nanostructure allows preserving stable QDs, by improving quantum yield, and lowering the toxicity of the core. Both QDs and GO are efficient nanoparticle systems that can potentially be used for drug delivery, diagnosis, and biosensors scaffolds. However, our study indicates that the conjugation between these two nanoparticle systems makes their properties even more effective. The change in fluorescent intensity through fluorescence resonance energy transfer from quantum dots to GO produced a novel method for detection of the target and allows for the optimization of the recognition limit of Bovine serum albumin (BSA) due to efficient fluorescence resonance energy transfer as observed through time resolved relaxation spectroscopy. It is observed that the quenching of photoluminescence peak of QDs due to GO shell produced an applicable strategy and could be conveniently extended for detection of other biomolecules. We obtained significantly enhanced spectral signal through successful conjugation of GO with CdSe/CdS core shell, which can potentially be used for the detection of biomolecules with high sensitivity and selectivity. Our study underlines the efficiency of QD conjugated GO core shell in spectral detection of proteins even at very low concentration (0.25 mmol).

We fabricated one-dimensional periodic multilayered metamaterial structures consisting of Ag and SiO₂alternating layers. Optical responses, such as transmission and absorption, are consistent well within finite difference time domain (FDTD) simulations. Angle dependent real and imaginary dielectric permittivity reflection spectra demonstrate their operational capability in the visible wavelength region. This multilayer metamaterial can be converted into a photonic crystal by manipulating the thickness of SiO₂ and we demonstrate that proper filling of SiO₂/Ag layers the operating wavelength can be tuned to higher wavelength region. However, absolute value of transmission reduces with increasing number of multilayer pairs due to metal absorption.