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We study spin-torque induced oscillations of MgO magnetic tunnel junctions in the time domain. By using the Hilbert transform on the time traces, we obtain for the first time a direct experimental measure of the coupling between the power and the phase fluctuations. We deduce the power restoration rate and we obtain low values for the coupling strength, which is consistent with the weak frequency dependence on the applied voltage., 3 pages, 3 figures

We present an experimental study of the power spectrum of current-driven magnetization oscillations in MgO tunnel junctions under low bias. We find the existence of narrow spectral lines, down to 8 MHz in width at a frequency of 10.7 GHz, for small applied fields with clear evidence of an auto-oscillation threshold. Micromagnetics simulations indicate that the excited mode corresponds to an edge mode of the synthetic antiferromagnet.

We propose a write scheme for perpendicular spin-transfer torque magnetoresistive random-access memory that significantly reduces the required tunnel current density and write energy. A sub-nanosecond in-plane polarized spin current pulse is generated using the spin-Hall effect, disturbing the stable magnetic state. Subsequent switching using out-of-plane polarized spin current becomes highly efficient. Through evaluation of the Landau-Lifshitz-Gilbert equation, we quantitatively assess the viability of this write scheme for a wide range of system parameters. A typical example shows an eight-fold reduction in tunnel current density, corresponding to a fifty-fold reduction in write energy, while maintaining a 1 ns write time.