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Electronic devices made of organic materials are critical for sustainable technology and the reduction of electronic waste. In this paper, we report on the resistive switching (RS) behavior of an organic full cream cow milk-based film placed between two electrodes. The switching properties of the milk film were investigated for use in RS memory (ReRAM), a new type of memory device. Two devices were created: one with electrodes made of silver (Ag) and indium doped tin oxide (ITO) (Ag/cow milk/ITO) and the other with electrodes made of Ag and tungsten (W) (Ag/cow milk/W). The study is unique in two ways: (1) the use of the spin coat method, which allowed us to deposit 15 nm thin milk films, and (2) the use of ITO and W bottom electrodes, which allowed us to compare the results. Our findings show that both ITO- and W-based devices exhibit RS properties with "S-type" bipolar behavior. The ITO-based device exhibited switching at 0.77 V and an ION/IOFF ratio of ∼ 2. The memory behavior of this device lasted ∼7 write/erase cycles, indicating the possibility of nonvolatile memory application. In contrast, the switching in the W-based device was characterized by low (0.1 V) voltage, and it lasted for only one cycle. Increasing the compliance current to 0.5 A improved the ON/OFF ratio to 102, but the device could not repeat the same hysteresis behavior. The analysis of the conduction and switching mechanisms in both devices revealed a conductive bridge mechanism attributed to the metalization of metal ions naturally found in milk. Overall, our findings show that the thickness of the milk film influences both conduction and switching mechanisms and that the (milk film)/ITO and (milk film)/W interfaces influence the conductance of full cream cow milk-based ReRAM devices. [ABSTRACT FROM AUTHOR]

Four types of resistive random access memory structures with an active layer comprising: (1) MoS2 (device A), (2) PVP (device B), (3) PVP and MoS2 bilayer (device C), and (4) PVP + MoS2 nanocomposites with 10 (device D), 20 (device E), 30 (device F) and 40 wt% (device G) MoS2, have been fabricated with Al and Ag as bottom and top electrodes, respectively. A study of resistive switching and electrical conduction mechanisms of these resistive random access memory modules revealed that devices A and B did not exhibit switching characteristics. Device C showed a combination of bipolar and threshold switching with a low switching voltage of 0:40 V. Device G portrayed bipolar switching at 0:56 V. In device C, space charge-limited conduction with a transition voltage Vtr = 0:24 V was observed, whereas in device G, Ohmic behaviour between 0.0 and 0.22 V, followed by trapping of charge in the 0.22-0.56 V regime before switching, was noticed. Both devices C and G showed a reasonable (≥ 10²) ON/OFF ratio. In nanocomposite devices, an increase in MoS2 content resulted in an increase in electrical conductivity in the Ohmic region, leading to threshold switching at 30 wt% (device F) and ultimately bipolar switching at 40 wt% (device G). These studies have shown that both switching and conduction mechanisms are sensitive to the type and composition of the active layer in the devices studied. [ABSTRACT FROM AUTHOR]