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Amaranth is rich in betalain. Both betalain metabolites and plant growth are affected by external factors. However, studies of amaranth seedling growth and betalain metabolism are limited by a lack of appropriate reference genes for qRT-PCR analyses. We selected 13 candidate reference genes from the amaranth transcriptome database and tested their expression stability under various environmental conditions and plant growth regulators. Five methods were used for the analysis: geNorm, NormFinder, BestKeeper, ΔCt, and RefFinder. The most stable reference genes were SAND and RAN1 for light quality, SAND and EIF5a for photoperiod, Actin-7 and TuA for temperature, SAND and Actin-7 for different tissue, SAND and EIF5a for NaCl, SAND and 60S RPL for GA3, 28S rRNA and 18S rRNA for 6-BA, 18S rRNA and 60S RPL for 2,4-D, EIF5a and 28S rRNA for ABA, Actin-11 and SKIP35 for SA, 28S rRNA and Actin-7 for MeJA, SAND and EIF5a for all samples. To further verify the reliability of the reference genes identified in this study, the expression levels of CYP76AD1 were studied in amaranth. This is the first systematic analysis aimed at the selection of reference genes for qRT-PCR in A. tricolor under different culture conditions. [ABSTRACT FROM AUTHOR]

In this paper, an experimental investigation of current-induced noise in current perpendicular-to-plane spin-valve heads is reported. It is found that the sense current yields excitations of coherent spin waves as well as substantial 1/f-like noise when current exceeds a critical value. The noise is magnetic in nature. The criticality and current directional dependence of the noise excitation clearly show that the spin transfer is the cause. Index Terms--Current perpendicular-to-plane (CPP) spin-valve read heads, spin transfer, 1/f noise.

In this paper, we present a quantitative micromagnetic modeling analysis of head stability in in-stack biased current perpendicular to plane (CPP) spin valve (SV) heads at deep submicron track widths. It is found that sufficient pinning on the in-stack bias layer is the key for stability. The narrower track-width heads have better stability. For in-stack biased bottom SV heads, the conventional structure has serious stability problem due to weakened or reversed bias field at free layer track edge. Controlling CPP edge profile is crucial for stability. We also studied the effect of current field on head performance. Depending on the current direction, current field can either induce instability or assist head stability. Index Terms--CPP spin valve read heads, in-stack longitudinal bias, stability.

In this paper, we present the vertical magnetoresistive random access memory (VMRAM) design based on micromagnetic simulation analysis. The design utilizes the vertical giant magnetoresistive effect of the magnetic multilayer. By making the memory element into a ring-shaped magnetic multilayer stack with orthogonal paired word lines, magnetic switching of the memory device becomes very robust. The design also adopts the readback scheme in pseudo spin valve MRAM so that only one transistor is needed for each bit line which can connect hundreds of memory elements, yielding a very high area density. It is estimated that the ultimate area density for the VMRAM is 400 Gbits/in.2. It is suggested that this memory design has the potential to not only replace the present semiconductor memory devices, such as FLASH, but also the potential to replace DRAM, SRAM, and even disk drives. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Presents a study on the micromagnetics of exchange biased Permalloy films. Use of combined magnetic force microscopy and micromagnetic modeling simulation; Lithographical patterning of bilayer films.

Investigates the effect of crystalline orientation and grain size on the switching behavior for patterned face-centered-cubic cobalt film elements. Correlation between film microstructure and magnetic switching properties; Model and energy analysis; Results and discussion.

Presents a micromagnetic study of magnetic switching properties on submicron scale single layer and multilayer thin film elements. Description of model and computation used; Co single layer film elements.

Presents a micromagnetic study of synthetic antiferromagnet (SAF) biased spin valve heads. Stabilization of the SAF biased spin valve heads; Details on the micromagnetic model used in the study; Results and discussions.

Focuses on a study which analyzed the spin valve memory element biased with a pair of antiparallel (AP) coupled ferromagnetic layer and modeled via micromagnetic simulation. Effects of submicrometer scale conventional spin valve memory element; Information on AP structure with two identical ferromagnetic layers under a uniform magnetic field; Development of a micromagnetic model using Landau-Lifshitz-Gilbert equations.

Presents the micromagnetic modeling of submicron size pseudo spin valve memory elements. Most critical aspects in magnetic-random access memory (MRAM) design; Operation scheme of pseudo spin valve structure MRAM; Results and discussion; Conclusion.

Presents a systematic micromagnetic analysis on spin valves giant magnetoresistive memory elements. Hysteresis loop for a 1.0 mum x 0.5 mum simple structure memory cell; Magnetization configurations of the pinned layer and the free layer; Effect of element width with same aspect ratio.