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2 results on '"technological dispersion"'

1. Computationally Efficient Physics-Based Compact CNTFET Model for Circuit Design.

Author

Frégonèse, Sébastien, d'Honincthun, Hugues Cazin, Goguet, Johnny, Maneux, Cristell, Zimmer, Thomas, Bourgoin, Jean-Philippe, Dolifus, Philippe, and Galdin-Retailleau, Sylvie

Subjects
*MONTE Carlo method software, *PARTICLE size determination, *COMPUTER simulation, *CARBON nanotubes, *FIELD-effect transistors, *ELECTRONIC circuit design
Abstract

We present a computationally efficient physics-based compact model designed for the conventional CNTFET featuring a MOSFET-like operation. A large part of its novelty lies on the implementation of a new analytical model of the channel charge. In addition, Boltzmann Monte Carlo (MC) simulation is performed with the challenge to cross-link this simulation technique to the compact modeling formulation. The comparison of the electrical characteristics obtained from the MC simulation and from the compact modeling demonstrates the compact model accuracy within its range of validity. Then, from a study of the CNT diameter dispersion for three technological processes, the compact model allows us to determine the CNTFET threshold voltage distribution and to evaluate the resulting dispersion of the propagation delay from the simulation of a ring oscillator. [ABSTRACT FROM AUTHOR]

Published
2008
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2. Computationally Efficient Physics-Based Compact CNTFET Model for Circuit Design

Author

Thomas Zimmer, Sebastien Fregonese, Cristell Maneux, H. Cazin d'Honincthun, Jean-Philippe Bourgoin, Philippe Dollfus, J. Goguet, S. Galdin-Retailleau, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Département de Recherche sur l'Etat Condensé, les Atomes et les Molécules (DRECAM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-06-NANO-0069,ACCENT,Action Calcul Composants En NanoTubes de carbone : simulation multi-échelle, de l'atomistique au circuit(2006), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), ANR: ACCENT & HF CNTFET,ACCENT & HF CNTFET, and Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1

Subjects
Engineering, Circuit design, Monte Carlo method, technological dispersion, 02 engineering and technology, Ring oscillator, CNTFET, 01 natural sciences, Carbon nanotube, law.invention, law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Monte Carlo simulation, 010302 applied physics, Computer simulation, business.industry, Transistor, Propagation delay, compact modeling, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, Carbon nanotube field-effect transistor, Nanoelectronics, transistor, 0210 nano-technology, business
Abstract

International audience; Abstract—We present a computationally efficient physics-based compact model designed for the conventional CNTFET featuring a MOSFET-like operation. A large part of its novelty lies on the implementation of a new analytical model of the channel charge. In addition, Boltzmann Monte Carlo (MC) simulation is performed with the challenge to cross-link this simulation technique to the compact modeling formulation. The comparison of the electrical characteristics obtained from the MC simulation and from the compact modeling demonstrates the compact model accuracy within its range of validity. Then, from a study of the CNT diameter dispersion for three technological processes, the compact model allows us to determine the CNTFET threshold voltage distribution and to evaluate the resulting dispersion of the propagation delay from the simulation of a ring oscillator.

Published
2008

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