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158 results on '"Centre de Nanosciences et de Nanotechnologies (C2N)"'

1. Material Perspective on HgTe Nanocrystal-Based Short-Wave Infrared Focal Plane Arrays

Author: Huichen Zhang, Rodolphe Alchaar, Yoann Prado, Adrien Khalili, Charlie Gréboval, Mariarosa Cavallo, Erwan Bossavit, Corentin Dabard, Tung Huu Dang, Claire Abadie, Christophe Methivier, David Darson, Victor Parahyba, Pierre Potet, Julien Ramade, Mathieu G. Silly, James K. Utterback, Debora Pierucci, Sandrine Ithurria, Emmanuel Lhuillier, Physico-chimie et dynamique des surfaces (INSP-E6), Institut des Nanosciences de Paris (INSP), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Nanostructures et optique (INSP-E4), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), Laboratoire de Réactivité de Surface (LRS), Institut de Chimie du CNRS (INC)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique de l'ENS - ENS Paris (LPENS), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université Paris Cité (UPCité)-Département de Physique de l'ENS-PSL, École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL), New Imaging Technologies (NIT), Institut Pprime (PPRIME), Université de Poitiers-ENSMA-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique et d'Etude des Matériaux (UMR 8213) (LPEM), Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris (ESPCI Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), ANR-19-CE24-0022,COPIN,Détecteur plasmonique à nanoCristaux colloïdaux: une nouvelle filière pour l'OPtoélectronique INfrarouge(2019), ANR-20-ASTR-0008,NITquantum,Design et fabrication d'un plan focal dans le proche infrarouge à base de nanocrisrtaux(2020), ANR-19-CE09-0017,FRONTAL,Nanocristaux Colloïdaux Dopés Infrarouges(2019), ANR-21-CE09-0029,MixDFerro,Heterostructures à dimensions mixtes sous contrôle ferroélectrique 2D(2021), ANR-19-CE09-0026,GRaSkop,Tuning Giant Rashba Spin-Orbit Coupling in Polar Single Layer Transition Metal Dichalcogenides(2019), ANR-21-CE24-0012,BRIGHT,Diode électroluminescente infrarouge brillante par exaltation du couplage lumière-matière(2021), and European Project: 756225,blackQD
Subjects: nanocrystal, imager, General Chemical Engineering, infrared, aging, Materials Chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, General Chemistry, HgTe
Abstract: International audience; After the use of nanocrystals as light down-converters, infrared sensing appears to be one of the first market applications where they can be used while being both electrically and optically active. Over recent years, tremendous progress has been achieved, leading to an apparent rise in the technological readiness level (TRL). So far, the efforts have been focused on PbS nanocrystals for operation in the near-infrared. Here, we focus on HgTe since its narrower band gap offers more flexibility to explore the extended shortwave and mid-wave infrared. We report a photoconductive strategy fort the design of short wave infrared focal plane array with enhanced image quality. An important aspect often swept under the rug at an early stage is the material stability. It appears that HgTe remains mostly unaffected by oxidation under air operation. The evaporation of Hg, a potentially dramatic aging process, only occurs at temperatures far beyond the focal plane array's standard working temperature. The main bottleneck appears to be the particle sintering resulting from joule heating of focal plane array. This suggests that a cooling system is required, with a first role of preventing the material from sintering even before targeting dark current reduction.
Published: 2022
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2. Critical Role of Water on the Synthesis and Gelling of γ-In2S3 Nanoribbons with a Giant Aspect Ratio

Author: Guillemeney, Lilian, Lermusiaux, Laurent, Davidson, Patrick, Hubley, Austin, Pierini, Stefano, Pierucci, Debora, Patriarche, Gilles, Canut, Bruno, Lhuillier, Emmanuel, Mahler, Benoît, Abécassis, Benjamin, Laboratoire de Chimie - UMR5182 (LC), École normale supérieure de Lyon (ENS de Lyon)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique des Solides (LPS), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Luminescence (LUMINESCENCE), Institut Lumière Matière [Villeurbanne] (ILM), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Department of Science and Technology, Parthenope University of Naples, Naples, Italy, Centre de Nanosciences et de Nanotechnologies (C2N), INL - Matériaux Fonctionnels et Nanostructures (INL - MFN), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Physico-chimie et dynamique des surfaces (INSP-E6), Institut des Nanosciences de Paris (INSP), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), and European Project: 865995,SENECA
Subjects: General Chemical Engineering, Materials Chemistry, [CHIM]Chemical Sciences, General Chemistry
Abstract: International audience
Published: 2022
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3. Self-Deformable Flexible MEMS Tweezer Composed of Poly(Vinylidene Fluoride)/Ionic Liquid Gel for Electrical Measurements and Soft Gripping

Author: Takafumi Yamaguchi, Naoto Usami, Kei Misumi, Atsushi Toyokura, Akio Higo, Shimpei Ono, Gilgueng Hwang, Guilhem Larrieu, Yoshiho Ikeuchi, Agnes Tixier-Mita, Ken Saito, Timothee Levi, Yoshio Mita, Graduate School of Engineering [The Univ of Tokyo] (UTokyo), The University of Tokyo (UTokyo), Central Research Institute of Electric Power Industry, Laboratory for Integrated Micro Mechatronics Systems (LIMMS), The University of Tokyo (UTokyo)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Nihon University, and University of Bordeaux, IMS, CNRS 5218
Subjects: [SPI]Engineering Sciences [physics], Mechanical Engineering, Electrical and Electronic Engineering
Abstract: International audience; We present a self-deformable flexible tweezer capable of simultaneous mechanical handling and electrical measurements. The tweezer has a soft cantilever with the dimensions 2 mm ×8 mm × 75- 100 μm , and undergoes self-deformation. The device is shown to be successfully capable of detecting electrical signals by gently touching the surface and grasping a spherical bead. The device demonstrated the lowest working voltage (1.5 VDC), force suitable for soft gripping, and curvature radius of 2 mm, that was one of the smallest values compared to that of similar state-of-the-art devices. The device was fabricated using a unique and highly reliable process that was specifically developed to produce flexible cantilevers with novel ionic polymer-metal composites (IPMCs). The materials used were poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) and an ionic liquid (IL). The PVDF-TrFE/IL gel was prepared using acetone as the solvent and the gel was coated with silver nanowires as the electrodes. The actuator with a length of 8 mm and containing 50 wt% IL yielded the largest bending displacement of 7 mm and minimum curvature radius of 2 mm at 1.5 VDC. [2022-0026]
Published: 2022
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4. Kardar–Parisi–Zhang universality in a one-dimensional polariton condensate

Author: Quentin Fontaine, Davide Squizzato, Florent Baboux, Ivan Amelio, Aristide Lemaître, Martina Morassi, Isabelle Sagnes, Luc Le Gratiet, Abdelmounaim Harouri, Michiel Wouters, Iacopo Carusotto, Alberto Amo, Maxime Richard, Anna Minguzzi, Léonie Canet, Sylvain Ravets, Jacqueline Bloch, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique et modélisation des milieux condensés (LPM2C ), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Laboratoire Matériaux et Phénomènes Quantiques (MPQ (UMR_7162)), Centre National de la Recherche Scientifique (CNRS)-Université Paris Cité (UPCité), Università degli Studi di Trento (UNITN), Universiteit Antwerpen = University of Antwerpen [Antwerpen], Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 (PhLAM), Université de Lille-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), ANR-16-IDEX-0004,ULNE,ULNE(2016), and ANR-18-CE92-0019,NEQfluids,Fluides classiques, quantiques et actifs hors de l'équilibre(2018)
Subjects: Multidisciplinary, Physics, Engineering sciences. Technology, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall]
Abstract: Revealing universal behaviours is a hallmark of statistical physics. Phenomena such as the stochastic growth of crystalline surfaces(1) and of interfaces in bacterial colonies(2), and spin transport in quantum magnets(3-6) all belong to the same universality class, despite the great plurality of physical mechanisms they involve at the microscopic level. More specifically, in all these systems, space-time correlations show power-law scalings characterized by universal critical exponents. This universality stems from a common underlying effective dynamics governed by the nonlinear stochastic Kardar-Parisi-Zhang (KPZ) equation(7). Recent theoretical works have suggested that this dynamics also emerges in the phase of out-of-equilibrium systems showing macroscopic spontaneous coherence(8-17). Here we experimentally demonstrate that the evolution of the phase in a driven-dissipative one-dimensional polariton condensate falls in the KPZ universality class. Our demonstration relies on a direct measurement of KPZ space-time scaling laws(18,19), combined with a theoretical analysis that reveals other key signatures of this universality class. Our results highlight fundamental physical differences between out-of-equilibrium condensates and their equilibrium counterparts, and open a paradigm for exploring universal behaviours in driven open quantum systems.
Published: 2022
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5. Defects Characterization of HgCdTe and CdZnTe Compounds by Positron Annihilation Spectroscopy

Author: Valentin Léger, Pierre Desgardin, Vincent Destefanis, Jacques Botsoa, Gilles Patriarche, Marie-France Barthe, Catherine Corbel, Laurent Rubaldo, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Conditions Extrêmes et Matériaux : Haute Température et Irradiation (CEMHTI), Université d'Orléans (UO)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), LYNRED (Veurey-Voroize), Laboratoire des Solides Irradiés (LSI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Nouveaux États Électroniques (NNE), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS)
Subjects: II-VI single crystals, Positron Annihilation Spectroscopy, Epitaxial MCT, Open-volume Defects, Materials Chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, Electrical and Electronic Engineering, Condensed Matter Physics, Bulk CZT, Positron Trapping, Electronic, Optical and Magnetic Materials
Abstract: International audience; Infrared cooled photodetectors must operate at higher temperatures to reduce their size, weight and power consumption (SWaP context). Their stability and image quality are then challenged by extra electrical activity of crystal defects. Knowledge of defect populations is mandatory to improve the material quality of the epitaxial Hg1−xCdxTe (MCT) active layer and the Cd1−xZnxTe (CZT) substrate. Positron annihilation spectroscopy with a slow positron beam was used to study near-surface open-volume defects profiles. Low- and high-momentum fractions (S,W) were used to characterize the Doppler broadening of the 511 keV electron-positron pair annihilation-line as a function of the positron implantation energy E. The results show that three regions can be identified beneath the surface of the as-grown non-optimized MCT layer. The quasi-linear relationship between the annihilation characteristics in the regions suggests that the defect populations mainly correspond to the same open-volume defect in different concentrations. The probed defect is thought to be related to the mercury vacancy. This hypothesis is discussed in an original way with near-surface elemental profiles using scanning transmission electron spectroscopy combined to energy dispersive x-ray spectroscopy (STEM-EDX). Afterwards, this approach is extended to CZT substrates showing that surface and bulk properties of those fabricated by LYNRED tend to match those that are state-of-the-art. A common open-volume defect is probed, in concentration estimated by Hall effect around 1015 cm−3 and thought to be related to the cadmium vacancy.
Published: 2022
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6. Frequency Chirp Characterization of Silicon Ring Resonator Modulators

Author: Erwan Weckenmann, Laurent Bramerie, Mathilde Gay, Diego Perez-Galacho, Frederic Boeuf, Lucas Deniel, Delphine Marris-Morini, Christophe Peucheret, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Universitat Politècnica de València (UPV), STMicroelectronics [Crolles] (ST-CROLLES), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Lannion Trégor Communauté, Région Bretagne, ANR-18-CE39-0009 (OBIWAM), Agence Nationale de la Recherche, and ANR-18-CE39-0009,OBIWAM,Imagerie microonde active instantanée basée sur l'optique(2018)
Subjects: ring resonator modulator, silicon photonics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Physics::Accelerator Physics, Physics::Optics, Physics::Atomic Physics, Electrical and Electronic Engineering, optical communications, Frequency chirp, intensity modulation, phase modulation, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials
Abstract: International audience; The frequency chirping properties of silicon ring resonator modulators (RRMs) are experimentally investigated under sinusoidal modulation. The modulated electric field at the output of an RRM is measured in the time domain thanks to a coherent detection system. The power and phase waveforms are then analyzed in terms of their temporal phase and amplitude for different wavelength detunings between the optical source and the resonance and for different modulation frequencies. The evolution of the frequency chirp, described through a peak-to-peak chirp parameter, is quantified as a function of wavelength detuning and modulation frequency for the first time.
Published: 2022
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7. Extreme Events Prediction from Nonlocal Partial Information in a Spatiotemporally Chaotic Microcavity Laser

Author: V. A. Pammi, M. G. Clerc, S. Coulibaly, S. Barbay, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Universidad de Santiago de Chile [Santiago] (USACH), Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 (PhLAM), and Université de Lille-Centre National de la Recherche Scientifique (CNRS)
Subjects: Physics - Data Analysis, Statistics and Probability, [NLIN.NLIN-CD]Nonlinear Sciences [physics]/Chaotic Dynamics [nlin.CD], FOS: Physical sciences, General Physics and Astronomy, Data Analysis, Statistics and Probability (physics.data-an)
Abstract: The forecasting of high-dimensional, spatiotemporal nonlinear systems has made tremendous progress with the advent of model-free machine learning techniques. However, in real systems it is not always possible to have all the information needed; only partial information is available for learning and forecasting. This can be due to insufficient temporal or spatial samplings, to inaccessible variables or to noisy training data. Here, we show that it is nevertheless possible to forecast extreme events occurrence in incomplete experimental recordings from a spatiotemporally chaotic microcavity laser using reservoir computing. Selecting regions of maximum transfer entropy, we show that it is possible to get higher forecasting accuracy using nonlocal data vs local data thus allowing greater warning times, at least twice the time horizon predicted from the nonlinear local Lyapunov exponent.
Published: 2023
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8. Metal-insulator crossover in monolayer MoS2

Author: Ivanovitch Castillo, Thibault Sohier, Matthieu Paillet, Dilek Cakiroglu, Christophe Consejo, Chengyu Wen, Felipe Wasem Klein, Meng-Qiang Zhao, Abdelkarim Ouerghi, Sylvie Contreras, A T Charlie Johnson, Matthieu Jean Verstraete, Benoit jean-pierre Jouault, Sebastien Nanot, Université de Montpellier, University of Liege, Department of Neuroscience and Biomedical Engineering, University of Pennsylvania, New Jersey Institute of Technology, Université Paris-Saclay, Aalto-yliopisto, Aalto University, Laboratoire Charles Coulomb (L2C), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Q MAT CESAM, Univ Liege, Theoret Mat Phys, Liège, University of Pensylvania, New Jersey Institute of Technology [Newark] (NJIT), Department of Physics and Astronomy, University of Pennsylvania, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), ANR-18-CE24-0004,JJEDi,Jonctions Josephson contrôlées Electrostatiquement dans les Dichalcogénures(2018), European Project: 2020225411,Optospin, and European Project: G.A. 21/25-11,DREAMS
Subjects: metal insulator transition, electronic transport, Mechanics of Materials, Mechanical Engineering, transition metal dichalcogenides, General Materials Science, Bioengineering, General Chemistry, Electrical and Electronic Engineering, MoS2, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall]
Abstract: We report on transport measurements in monolayer MoS2 devices, close to the bottom of the conduction band edge. These devices were annealed in situ before electrical measurements. This allows us to obtain good ohmic contacts at low temperatures, and to measure precisely the conductivity and mobility via four-probe measurements. The measured effective mobility up to μeff = 180 cm2/Vs is among the largest obtained in CVD-grown MoS2 monolayer devices. These measurements show that electronic transport is of the insulating type for σ≤ 1.4e2/h and n ≤ 1.7×1012 cm-2, and a crossover to a metallic regime is observed above those values. In the insulating regime, thermally activated transport dominates at high temperature (T > 100 K). At lower temperatures, conductivity is driven by Efros-Schklovkii variable range hopping in all measured devices, with a universal and constant hopping prefactor, that is a clear indication that hopping is not phonon-mediated. At higher carrier density, and high temperature, the conductivity is well modeled by the Boltzmann equation for a non-interacting Fermi gas, taking into account both phonon and impurity scatterings. Finally, even if this apparent metal-insulator transition can be explained by phonon-related phenomena at high temperature, the possibility of a genuine 2D MIT cannot be ruled out, as we can observe a clear power-law diverging localization length close to the transition, and a one-parameter scaling can be realized.
Published: 2023
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9. Ferroelectric phase transitions in epitaxial antiferroelectric PbZrO3 thin films

Author: Pauline Dufour, Thomas Maroutian, Maxime Vallet, Kinnary Patel, André Chanthbouala, Charlotte Jacquemont, Lluis Yedra, Vincent Humbert, Florian Godel, Bin Xu, Sergey Prosandeev, Laurent Bellaiche, Mojca Otoničar, Stéphane Fusil, Brahim Dkhil, Vincent Garcia, Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), THALES [France]-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratoire Structures, Propriétés et Modélisation des solides (SPMS), Institut de Chimie du CNRS (INC)-CentraleSupélec-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), University of Arkansas [Fayetteville], Soochow University, Jozef Stefan Institute [Ljubljana] (IJS), ANR-21-CE09-0033,TATOO,Contrôle des états topologiques dans les multiferroïques(2021), ANR-17-CE24-0032,EXPAND,Exploration des oxydes antiferroélectritriques comme nouvel brique technologique pour de futurs dispositifs nanoélectroniques(2017), and European Project: 964931,TSAR
Subjects: [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Physics and Astronomy
Abstract: International audience; The archetypical antiferroelectric, PbZrO3, is currently attracting a lot of interest, but no consensus can be clearly established on the nature of its ground state as well as on the influence of external stimuli over its physical properties. Here, the antiferroelectric state of 45-nm-thick epitaxial thin films of PbZrO3 is established by observing the characteristic structural periodicity of antiparallel dipoles at the atomic scale, combined with clear double hysteresis of the polarization-electric field response related to antiferroelectric–to–ferroelectric phase transitions. Surprisingly, while the antiferroelectric state is identified as the ground state, temperature-dependent measurements show that a transition to a ferroelectric-like state appears in a large temperature window (100 K). Atomistic simulations further confirm the existence, and provides the origin, of such ferroelectric state in the films. Electric-field-induced ferroelectric transitions are also detected by the divergence of the piezoresponse force microscopy response. Using this technique, we further reveal the signature of a ferroelectric ground state for 4-nm-thick PbZrO3 films. Compared with bulk crystals, these results suggest a more complex competition between ferroelectric and antiferroelectric phases in epitaxial thin films of PbZrO3.
Published: 2023
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10. Exchange energies in CoFeB/Ru/CoFeB synthetic antiferromagnets

Author: A. Mouhoub, F. Millo, C. Chappert, J.-V. Kim, J. Létang, A. Solignac, T. Devolder, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Service de physique de l'état condensé (SPEC - UMR3680), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratoire Nano-Magnétisme et Oxydes (LNO), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut Rayonnement Matière de Saclay (IRAMIS), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay
Subjects: structural properties, Condensed Matter - Materials Science, magnetic interactions, Physics and Astronomy (miscellaneous), [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], magnetization dynamics, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, General Materials Science, magnetic coupling
Abstract: The interlayer exchange coupling confers specific properties to Synthetic Antiferromagnets that make them suitable for several applications of spintronics. The efficient use of this magnetic configuration requires an in-depth understanding of the magnetic properties and their correlation with the material structure. Here we establish a reliable procedure to quantify the interlayer exchange coupling and the intralayer exchange stiffness in synthetic antiferromagnets; we apply it to the ultrasmooth and amorphous Co$_{40}$Fe$_{40}$B$_{20}$ (5-40 nm)/Ru/ Co$_{40}$Fe$_{40}$B$_{20}$ material platform. The complex interplay between the two exchange interactions results in a gradient of the magnetization orientation across the thickness of the stack which alters the hysteresis and the spin wave eigenmodes of the stack in a non trivial way. We measured the field-dependence of the frequencies of the first four spin waves confined within the thickness of the stack. We modeled these frequencies and the corresponding thickness profiles of these spin waves using micromagnetic simulations. The comparison with the experimental results allows to deduce the magnetic parameters that best account for the sample behavior. The exchange stiffness is established to be 16 $\pm$ 2 pJ/m, independently of the Co$_{40}$Fe$_{40}$B$_{20}$ thickness. The interlayer exchange coupling starts from -1.7 mJ/m$^2$ for the thinnest layers and it can be maintained above -1.3 mJ/m$^2$ for CoFeB layers as thick as 40 nm. The comparison of our method with earlier characterizations using the sole saturation fields argues for a need to revisit the tabulated values of interlayer exchange coupling in thick synthetic antiferromagnets.
Published: 2023
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11. Lasing in a ZnO waveguide: Clear evidence of polaritonic gain obtained by monitoring the continuous exciton screening

Author: Geoffrey Kreyder, Léa Hermet, Pierre Disseix, François Médard, Martine Mihailovic, François Réveret, Sophie Bouchoule, Christiane Deparis, Jesús Zuñiga-Pérez, Joël Leymarie, Institut Pascal (IP), Centre National de la Recherche Scientifique (CNRS)-Université Clermont Auvergne (UCA)-Institut national polytechnique Clermont Auvergne (INP Clermont Auvergne), Université Clermont Auvergne (UCA)-Université Clermont Auvergne (UCA), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), MajuLab, and National University of Singapore (NUS)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
Subjects: Condensed Matter - Materials Science, PhotoluminescenceTime-resolved, Wide band gap systems, Polaritons, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, photoluminescence, II-VI semiconductors, Excitons, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Waveguides
Abstract: International audience; The coherent emission of exciton polaritons was proposed as a means of lowering the lasing threshold because it does not require the dissociation of excitons to obtain an electron-hole plasma, as in a classical semiconductor laser based on population inversion. In this work we propose a method to prove clearly the polaritonic nature of lasing by combining experimental measurements with a model accounting for the permittivity change as a function of the carrier density. To do so we use angle resolved photoluminescence to observe the lasing at cryogenic temperature from a polariton mode in a zinc oxide waveguide structure, and to monitor the continuous shift of the polaritonic dispersion towards a photonic dispersion as the optical intensity of the pump is increased (up to 20 times the one at threshold). This shift is reproduced thanks to a model taking into account the reduction of the oscillator strength and the renormalization of the band gap due to the screening of the electrostatic interaction between electrons and holes. Furthermore, the measurement of the carrier lifetime at optical intensities in the order of those at which the polariton lasing occurs enables us to estimate the carrier density, confirming that it is lower than the corresponding Mott density for zinc oxide reported in the literature.
Published: 2023
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12. Photon-number entanglement generated by sequential excitation of a two-level atom

Author: Stephen C. Wein, Juan C. Loredo, Maria Maffei, Paul Hilaire, Abdelmounaim Harouri, Niccolo Somaschi, Aristide Lemaître, Isabelle Sagnes, Loïc Lanco, Olivier Krebs, Alexia Auffèves, Christoph Simon, Pascale Senellart, Carlos Antón-Solanas, University of Calgary, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Quandela SAS, Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), and Université Grenoble Alpes (UGA)
Subjects: Quantum Physics, [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], FOS: Physical sciences, Quantum Physics (quant-ph), ComputingMilieux_MISCELLANEOUS, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials
Abstract: Entanglement and spontaneous emission are fundamental quantum phenomena that drive many applications of quantum physics. During the spontaneous emission of light from an excited two-level atom, the atom briefly becomes entangled with the photonic field. Here, we show that this natural process can be used to produce photon-number entangled states of light distributed in time. By exciting a quantum dot -- an artificial two-level atom -- with two sequential pi pulses, we generate a photon-number Bell state. We characterise this state using time-resolved intensity and phase correlation measurements. Furthermore, we theoretically show that applying longer sequences of pulses to a two-level atom can produce a series of multi-temporal mode entangled states with properties intrinsically related to the Fibonacci sequence. Our work demonstrates that spontaneous emission is a powerful entanglement resource and it can be further exploited to generate new states of quantum light with potential applications in quantum technologies., Main: 7 pages, 3 figures; Supplementary: 11 pages, 5 figures
Published: 2022
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13. Regulated Dynamics with Two Monolayer Steps in Vapor–Solid–Solid Growth of Nanowires

Author: Edith Bellet-Amalric, Federico Panciera, Gilles Patriarche, Laurent Travers, Martien den Hertog, Jean-Christophe Harmand, Frank Glas, Joël Cibert, Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Matériaux, Rayonnements, Structure (MRS), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Matériaux, Rayonnements, Structure (NEEL - MRS), and Nanophysique et Semiconducteurs (NEEL - NPSC)
Subjects: Condensed Matter - Materials Science, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Engineering, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, General Physics and Astronomy, General Materials Science
Abstract: International audience; The growth of ZnTe nanowires and ZnTe-CdTe nanowire heterostructures is studied by \emph{in situ} transmission electron microscopy. We describe the shape, and the change of shape, of the solid gold nanoparticle during vapor-solid-solid growth. We show the balance between one-monolayer and two-monolayer steps which characterizes the vapor-liquid-solid and vapor-solid-solid growth modes of ZnTe. We discuss the likely role of the mismatch strain and lattice coincidence between gold and ZnTe on the predominance of two-monolayer steps during vapor-solid-solid growth, and on the subsequent self-regulation of the step dynamics. Finally, the formation of an interface between CdTe and ZnTe is described.
Published: 2022
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14. Guided-Mode Resonator Coupled with Nanocrystal Intraband Absorption

Author: Khalili, Adrien, Weis, Mateusz, Mizrahi, Simon Gwénaël, Chu, Audrey, Dang, Tung Huu, Abadie, Claire, Gréboval, Charlie, Dabard, Corentin, Prado, Yoann, Xu, Xiang Zhen, Péronne, Emmanuel, Livache, Clément, Ithurria, Sandrine, Patriarche, Gilles, Ramade, Julien, Vincent, Grégory, Boschetto, Davide, Lhuillier, Emmanuel, Physico-chimie et dynamique des surfaces (INSP-E6), Institut des Nanosciences de Paris (INSP), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'optique appliquée (LOA), École Nationale Supérieure de Techniques Avancées (ENSTA Paris)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), DOTA, ONERA, Université Paris Saclay [Palaiseau], ONERA-Université Paris-Saclay, Laboratoire de Physique et d'Etude des Matériaux (UMR 8213) (LPEM), Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris (ESPCI Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Nanostructures et optique (INSP-E4), Los Alamos National Laboratory (LANL), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Physique et Propriétés des Nanostructures PPNa (PPNa), Département Physique et Mécanique des Matériaux (Département Physique et Mécanique des Matériaux), Institut Pprime (PPRIME), Université de Poitiers-ENSMA-Centre National de la Recherche Scientifique (CNRS)-Université de Poitiers-ENSMA-Centre National de la Recherche Scientifique (CNRS)-Institut Pprime (PPRIME), Université de Poitiers-ENSMA-Centre National de la Recherche Scientifique (CNRS)-Université de Poitiers-ENSMA-Centre National de la Recherche Scientifique (CNRS), ANR-19-CE24-0022,COPIN,Détecteur plasmonique à nanoCristaux colloïdaux: une nouvelle filière pour l'OPtoélectronique INfrarouge(2019), ANR-19-CE09-0017,FRONTAL,Nanocristaux Colloïdaux Dopés Infrarouges(2019), ANR-19-CE09-0026,GRaSkop,Tuning Giant Rashba Spin-Orbit Coupling in Polar Single Layer Transition Metal Dichalcogenides(2019), ANR-18-CE30-0023,IPER-Nano2,Nanocristaux de perovskite inorganique pour la nanophotonique(2018), ANR-21-CE24-0012,BRIGHT,Diode électroluminescente infrarouge brillante par exaltation du couplage lumière-matière(2021), ANR-21-CE09-0029,MixDFerro,Heterostructures à dimensions mixtes sous contrôle ferroélectrique 2D(2021), ANR-20-ASTR-0008,NITquantum,Design et fabrication d'un plan focal dans le proche infrarouge à base de nanocrisrtaux(2020), European Project: 756225,blackQD, and European Project: 853049,ne2dem
Subjects: intraband absorption, optical resonator, mid-infrared, mercury chalcogenides, [CHIM.MATE]Chemical Sciences/Material chemistry, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Electrical and Electronic Engineering, doped nanocrystals, Atomic and Molecular Physics, and Optics, Biotechnology, Electronic, Optical and Magnetic Materials
Abstract: International audience; Intraband absorption in doped nanocrystals offers an interesting alternative to narrow band gap materials to explore mid infrared optoelectronic device designs. However, the performance of such device clearly lags behind the ones relying on intrinsic materials. Livache et al. have proposed a dye sensitized approach to overcome the limitations observed from intraband materials (high dark current, slow response, low activation energy), where the intraband absorber is coupled to an undoped material which takes care of the charge conduction. Here, we unveil the coupling between both materials using mid-infrared transient reflectivity (TR) measurement. We show that hybrid material displays a unique feature in the TR signal that we attribute to a charge transfer and for which the dynamic matches the hopping time. We then developed a strategy to enhance the photodetection performances of the hybrid material by coupling for the first time intraband absorption to a light resonator. The latter is used to enhance the absorption by a factor 4 and enables an increase of the operating temperature by 80 K compared to the reference device. The obtained device matches the performance of best devices relying on intraband absorption.
Published: 2022
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15. Ferromagnetism and Rashba Spin–Orbit Coupling in the Two-Dimensional (V,Pt)Se2 Alloy

Author: Emilio Vélez-Fort, Ali Hallal, Roberto Sant, Thomas Guillet, Khasan Abdukayumov, Alain Marty, Céline Vergnaud, Jean-François Jacquot, Denis Jalabert, Jun Fujii, Ivana Vobornik, Julien Rault, Nicholas B. Brookes, Danilo Longo, Philippe Ohresser, Abdelkarim Ouerghi, Jean-Yves Veuillen, Pierre Mallet, Hervé Boukari, Hanako Okuno, Mairbek Chshiev, Frédéric Bonell, Matthieu Jamet, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), European Synchrotron Radiation Facility (ESRF), Conception d’Architectures Moléculaires et Processus Electroniques (CAMPE ), SYstèmes Moléculaires et nanoMatériaux pour l’Energie et la Santé (SYMMES), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Département Interfaces pour l'énergie, la Santé et l'Environnement (DIESE), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Laboratorio TASC (IOM CNR), National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), CNR Istituto Officina dei Materiali (IOM), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Nano-Electronique Quantique et Spectroscopie (NEEL - QuNES), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Universitaire de France (IUF), Ministère de l'Education nationale, de l’Enseignement supérieur et de la Recherche (M.E.N.E.S.R.), ANR-18-CE24-0007,MAGICVALLEY,Polarisation de vallée induite par couplage d'échange magnétique dans les matériaux 2D à grande échelle(2018), ANR-10-LABX-0051,LANEF,Laboratory of Alliances on Nanosciences - Energy for the Future(2010), and European Project: 785219,H2020,GrapheneCore2(2018)
Subjects: Condensed Matter::Materials Science, Materials Chemistry, Electrochemistry, Condensed Matter::Strongly Correlated Electrons, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Electronic, Optical and Magnetic Materials
Abstract: 5 pages, 5 figures; International audience; We report on a two-dimensional (2D) V1–xPtxSe2 alloy that exhibits ferromagnetic order and Rashba spin–orbit coupling. Although ferromagnetism is absent in 1T-VSe2 because of the competition with the charge density wave phase, we demonstrate theoretically and experimentally that the substitution of vanadium by platinum in VSe2 (10–50%) to form a homogeneous 2D alloy restores ferromagnetic order down to one monolayer of V0.65Pt0.35Se2. Moreover, the presence of platinum atoms gives rise to Rashba spin–orbit coupling in (V,Pt)Se2, providing an original platform to study the interplay between ferromagnetism and spin–orbit coupling in the 2D limit.
Published: 2022
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16. Control of domain wall and pinning disorder interaction by light He$^+$ ion irradiation in Pt/Co/AlOx ultrathin films

Author: Balan, Cristina, van der Jagt, Johannes W., Garcia, Jose Peña, Vogel, Jan, Ranno, Laurent, Bonfim, Marlio, Ravelosona, Dafiné, Pizzini, Stefania, Jeudy, Vincent, Micro et NanoMagnétisme (NEEL - MNM), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Spin-Ion Technologies, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Universidade Federal do Paraná (UFPR), Laboratoire de Physique des Solides (LPS), ANR-17-CE24-0025,TOPSKY,Propriétés topologiques des skyrmions magnétiques et opportunitiés pour le dévelopement de nouveaux dispositifs spintroniques(2017), ANR-10-LABX-0051,LANEF,Laboratory of Alliances on Nanosciences - Energy for the Future(2010), and European Project: 'Magnetism and the effect of Electric Field' (MagnEFi)
Subjects: [PHYS]Physics [physics], Condensed Matter - Mesoscale and Nanoscale Physics, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), FOS: Physical sciences
Abstract: We have studied the effect of He$^+$ irradiation on the dynamics of chiral domain walls in Pt/Co/AlOx trilayers in the creep regime. The irradiation leads to a strong decrease of the depinning field and a non-monotonous change of the effective pinning barriers. The variations of domain wall dynamics result essentially from the strong decrease of the effective anisotropy constant, which increases the domain wall width. The latter is found to present a perfect scaling with the length-scale of the interaction between domain wall and disorder, $\xi$. On the other hand, the strength of the domain wall-disorder interaction, $f_{pin}$, is weakly impacted by the irradiation, suggesting that the length-scales of the disorder fluctuation remain smaller than the domain wall width., Comment: 5 pages, 3 figures
Published: 2023
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17. Electroluminescence from nanocrystals above 2 µm

Author: Junling Qu, Mateusz Weis, Eva Izquierdo, Simon Gwénaël Mizrahi, Audrey Chu, Corentin Dabard, Charlie Gréboval, Erwan Bossavit, Yoann Prado, Emmanuel Péronne, Sandrine Ithurria, Gilles Patriarche, Mathieu G. Silly, Grégory Vincent, Davide Boschetto, Emmanuel Lhuillier, Physico-chimie et dynamique des surfaces (INSP-E6), Institut des Nanosciences de Paris (INSP), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'optique appliquée (LOA), École Nationale Supérieure de Techniques Avancées (ENSTA Paris)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique et d'Etude des Matériaux (UMR 8213) (LPEM), Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris (ESPCI Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Nanostructures et optique (INSP-E4), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), DOTA, ONERA, Université Paris Saclay [Palaiseau], ONERA-Université Paris-Saclay, École Nationale Supérieure de Techniques Avancées (ENSTA Paris), ANR-21-CE24-0012,BRIGHT,Diode électroluminescente infrarouge brillante par exaltation du couplage lumière-matière(2021), ANR-19-CE24-0022,COPIN,Détecteur plasmonique à nanoCristaux colloïdaux: une nouvelle filière pour l'OPtoélectronique INfrarouge(2019), ANR-19-CE09-0017,FRONTAL,Nanocristaux Colloïdaux Dopés Infrarouges(2019), ANR-18-CE30-0023,IPER-Nano2,Nanocristaux de perovskite inorganique pour la nanophotonique(2018), ANR-19-CE09-0026,GRaSkop,Tuning Giant Rashba Spin-Orbit Coupling in Polar Single Layer Transition Metal Dichalcogenides(2019), ANR-20-ASTR-0008,NITquantum,Design et fabrication d'un plan focal dans le proche infrarouge à base de nanocrisrtaux(2020), European Project: 756225,blackQD, and European Project: 853049,ne2dem
Subjects: narrow band-gap nanocrystals, [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, HgTe, 7. Clean energy, 01 natural sciences, Atomic and Molecular Physics, and Optics, electroluminescence, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology, ComputingMilieux_MISCELLANEOUS, short wave infrared
Abstract: International audience; Visible nanocrystal-based light-emitting diodes (LEDs) are about to become commercially available. However, their infrared counterparts suffer from two key limitations. First, III–V semiconductor technologies are strong competitors. Second, their potential for operation beyond 1.7 µm remains unexplored. The range from 1.5 to 4 µm corresponds to a technological gap in which the efficiency of interband quantum-well-based devices vanishes and quantum cascade lasers are not efficient enough. Powerful infrared LEDs in this range are needed for applications such as active imaging, organic molecule sensing and airfield lighting. Here we report the design of a HgTe nanocrystal-based LED with luminescence between 2 and 2.3 µm. With an external quantum efficiency of 0.3% and radiance up to 3 W Sr−1 m−2, these HgTe LEDs already present a competitive performance for emission above 2 µm.
Published: 2021
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18. Broadband behavior of quadratic metalenses with a wide field of view

Author: Yang Liu, Jianhao Zhang, Xavier Le Roux, Eric Cassan, Delphine Marris-Morini, Laurent Vivien, Carlos Alonso-Ramos, Daniele Melati, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), ANR-22-ERCS-0007,BEAMS,Plateforme d'intégration photonique multicouche pour l'optique en espace libre(2022), and European Project: 101041131,ERC BEAMS
Subjects: [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, FOS: Physical sciences, Atomic and Molecular Physics, and Optics, Physics - Optics, Optics (physics.optics)
Abstract: International audience; Metalenses are attracting a large interest for the implementation of complex optical functionalities in planar and compact devices. However, chromatic and off-axis aberrations remain standing challenges. Here, we experimentally investigate the broadband behavior of metalenses based on quadratic phase profiles. We show that these metalenses do not only guarantee an arbitrarily large field of view but are also inherently tolerant to longitudinal and transverse chromatic aberrations. As such, we demonstrate a single-layer, silicon metalens with a field of view of 86° and a bandwidth up to 140 nm operating at both 1300 nm and 1550 nm telecommunication wavelength bands.
Published: 2022
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19. Helmholtz Resonator Applied to Nanocrystal-Based Infrared Sensing

Author: Claire Abadie, Laura Paggi, Alice Fabas, Adrien Khalili, Tung Huu Dang, Corentin Dabard, Mariarosa Cavallo, Rodolphe Alchaar, Huichen Zhang, Yoann Prado, Nathalie Bardou, Christophe Dupuis, Xiang Zhen Xu, Sandrine Ithurria, Debora Pierucci, James K. Utterback, Baptiste Fix, Grégory Vincent, Patrick Bouchon, Emmanuel Lhuillier, Physico-chimie et dynamique des surfaces (INSP-E6), Institut des Nanosciences de Paris (INSP), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), DOTA, ONERA, Université Paris Saclay [Palaiseau], ONERA-Université Paris-Saclay, Laboratoire de Physique et d'Etude des Matériaux (UMR 8213) (LPEM), Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris (ESPCI Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Nanostructures et optique (INSP-E4), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), ANR-19-CE24-0022,COPIN,Détecteur plasmonique à nanoCristaux colloïdaux: une nouvelle filière pour l'OPtoélectronique INfrarouge(2019), ANR-19-CE09-0017,FRONTAL,Nanocristaux Colloïdaux Dopés Infrarouges(2019), ANR-21-CE24-0012,BRIGHT,Diode électroluminescente infrarouge brillante par exaltation du couplage lumière-matière(2021), ANR-21-CE09-0029,MixDFerro,Heterostructures à dimensions mixtes sous contrôle ferroélectrique 2D(2021), ANR-18-CE30-0023,IPER-Nano2,Nanocristaux de perovskite inorganique pour la nanophotonique(2018), ANR-19-CE09-0026,GRaSkop,Tuning Giant Rashba Spin-Orbit Coupling in Polar Single Layer Transition Metal Dichalcogenides(2019), and European Project: 756225,blackQD
Subjects: nanocrystal, Mechanical Engineering, Helmholtz resonator, infrared, General Materials Science, Bioengineering, photoconduction, General Chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Condensed Matter Physics, photonic cavity
Abstract: International audience; While the integration of nanocrystals as an active medium for optoelectronic devices progresses, light management strategies become required. Over recent years, several photonic structures (plasmons, cavities, mirrors, etc.) have been coupled to nanocrystal films to shape the absorption spectrum, tune the directionality, and so on. Here, we explore a photonic equivalent of the acoustic Helmholtz resonator and propose a design that can easily be fabricated. This geometry combines a strong electromagnetic field magnification and a narrow channel width compatible with efficient charge conduction in spite of hopping conduction. At 80 K, the device reaches a responsivity above 1 A•W-1 and detectivity above 10 11 Jones (3 µm cutoff) while offering a significantly faster time-response than vertical geometry diodes.
Published: 2022
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20. Quantum tailoring of electronic properties in covalently functionalized graphene: application to ammonia gas detection

Author: A. Dammak, F. Raouafi, A. Cavanna, P. Rudolf, D. di Caprio, V. Sallet, A. Madouri, J. M. Jancu, Université de Carthage - University of Carthage, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Zernike Institute for Advanced Materials Groningen, University of Groningen [Groningen], Institut de Recherche de Chimie Paris (IRCP), Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Ministère de la Culture (MC), Institut de Chimie du CNRS (INC), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: [CHIM.THEO]Chemical Sciences/Theoretical and/or physical chemistry, [CHIM.ANAL]Chemical Sciences/Analytical chemistry, General Chemical Engineering, [CHIM.MATE]Chemical Sciences/Material chemistry, General Chemistry
Abstract: International audience; Functionalized graphene offers great potential in the field of rapid detection of gases at room temperature. We performed first-principles calculations to study the suitability of 4-sulfobenzenediazonium salts (4SBD) as bandgap modifier in graphene. The signature of unpaired spins is evidenced near the Fermi level owing to the symmetry breaking of graphene sublattices. 4SBD-chemisorbed on graphene is found to be electronically sensitive to the presence of ammonia NH 3 with increasing gas concentration.
Published: 2022
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21. Relaxation mechanism of GaP grown on 001 Si substrates: influence of defects on the growth of AlGaP layers on GaP/Si templates

Author: M. Bailly, Grégoire Beaudoin, Ludovic Largeau, A. Grisard, Isabelle Sagnes, D. Dolfi, K. Pantzas, A. Martin, Olivia Mauguin, Gilles Patriarche, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Thales Research and Technologies [Orsay] (TRT), and THALES
Subjects: 010302 applied physics, Condensed Matter - Materials Science, Materials science, business.industry, Relaxation (NMR), Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, Template, Mechanical stability, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Metalorganic vapour phase epitaxy, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, Deposition (law)
Abstract: The mechanical stability of commercial GaP/Si templates during thermal an-nealing and subsequent MOCVD growth of GaP and AlGaP is investigated.Although the GaP layer of the template originally presents an excellent surfacemorphology, annealing at high enough temperatures to remove the native oxideprior to growth leads to plastic relaxation, accompanied by a variety of defects,including a dense grid of micro-twins. These micro-twins detrimentally affectGaP and AlGaP layers grown subsequently on the template., Comment: 6 figures
Published: 2021
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22. États originaux de la lumière par structuration 3D de l’émission D’un laser à Métasurface

Author: Konstantinos Pantzas, Alaeddine Abbes, L. Legratiet, Baptiste Chomet, Isabelle Sagnes, Mikhael Myara, Philippe Lalanne, Arnaud Garnache, Mohamed Seghilani, Stéphane Denet, Nathan Vigne, Stéphane Blin, Grégoire Beaudoin, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Photonique et Térahertz (PhoTéra), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)
Subjects: [SPI]Engineering Sciences [physics]
Abstract: International audience; La génération d’états de photon cohérents puissants dans le proche-IR et THz, présentant une structuration 3D spatio-temporelle, représente un défi physique et technologique. Elle est d’intérêt pour les applications : pinces optiques, capteurs, microscopie, LIDAR, télécoms, spectroscopie… Ces états originaux sont ici générés en exploitant les nanotechnologies à semi-conducteur III-V et les lasers à cavité externe verticale intégrant une métasurface : lumière VORTEX, bi-fréquences pour le THz, ou sans mode.
Published: 2021
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23. Optical simulations and optimization of perovskite/CI(G)S tandem solar cells using the transfer matrix method

Author: Aleksandra Bojar, Daniel Micha, Maxime Giteau, Marco A Ruiz-Preciado, Ulrich W Paetzold, Marcel Simor, Veronique S Gevaerts, Romain Carron, Karim Medjoubi, Stéphane Collin, Negar Naghavi, Jean-François Guillemoles, Philip Schulz, Institut Photovoltaïque d’Ile-de-France (UMR) (IPVF), École polytechnique (X)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-TOTAL FINA ELF-EDF (EDF)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF)-Air Liquide [Siège Social], Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Karlsruhe Institute of Technology (KIT), Swiss Federal Laboratories for Materials Science and Technology [Dübendorf] (EMPA), ANR-17-MPGA-0012,InHyMat-PV,Interfaces and Hybrid Materials for Photovoltaics(2017), and European Project: 850937,PERCISTAND
Subjects: General Energy, transfer matrix method, Materials Science (miscellaneous), [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Materials Chemistry, optical simulations, ddc:620, Engineering & allied operations, perovskite/CIGS tandem solar cells
Abstract: In this work we employ the transfer matrix method for the analysis of optical materials properties to simulate and optimize monolithic tandem solar cell devices based on CuIn1−x Ga x Se2, CI(G)S, and perovskite (PVK) absorbers. By finding models that fit well the experimental data of the CI(G)S solar cell, the semitransparent perovskite solar cell (PSC) and the PVK/CI(G)S monolithic tandem solar cell, we were able to perform a detailed optical loss analysis that allowed us to determine sources of parasitic absorption. We found better substitute materials for the transport layers to increase the power conversion efficiency and, in case of semitransparent PSCs, sub-bandgap transmittance. Our results set guidelines for the monolithic PVK/CI(G)S tandem solar cells development, predicting an achievable efficiency of 30%.
Published: 2023
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24. Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell

Author: W Khelifi, C Coinon, M Berthe, D Troadec, G Patriarche, X Wallart, B Grandidier, L Desplanque, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Physique - IEMN (PHYSIQUE - IEMN), This study was financially supported by the French National Research agency (INSPIRING project ANR-21-CE09-0026-01), the IEMN PCMP-PCP and CMNF platforms of the French Technological Network RENATECH, and the Région Hauts de France., PCMP PCP, CMNF, Renatech Network, and ANR-21-CE09-0026,Inspiring,Nanofils coeur-coquille planaires à fort couplage spin-orbite pour composants mesoscopiques intégrés(2021)
Subjects: [PHYS]Physics [physics], [SPI]Engineering Sciences [physics], Mechanics of Materials, Mechanical Engineering, General Materials Science, Bioengineering, General Chemistry, Electrical and Electronic Engineering
Abstract: The nanoscale intrinsic electrical properties of in-plane InAs nanowires grown by selective area epitaxy are investigated using a process-free method involving a multi-probe scanning tunneling microscope. The resistance of oxide-free InAs nanowires grown on an InP(111)B substrate and the resistance of InAs/GaSb core–shell nanowires grown on an InP(001) substrate are measured using a collinear four-point probe arrangement in ultrahigh vacuum. They are compared with the resistance of two-dimensional electron gas reference samples measured using the same method and with the Van der Pauw geometry for validation. A significant improvement of the conductance is achieved when the InAs nanowires are fully embedded in GaSb, exhibiting an intrinsic sheet conductance close to the one of the quantum well counterpart.
Published: 2023
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25. Synthesis of ZnO sol–gel thin-films CMOS-Compatible

Author: Julien Chaste, Nizar Ben Moussa, Fabien Bayle, Radouane Chtourou, Nessrine Jebari, Etienne Herth, Mohamed Lajnef, Ali Madouri, Cedric Villebasse, Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)
Subjects: [PHYS]Physics [physics], 010302 applied physics, Spin coating, Materials science, Silicon, business.industry, Band gap, Annealing (metallurgy), General Chemical Engineering, chemistry.chemical_element, 02 engineering and technology, General Chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, Semiconductor, chemistry, 0103 physical sciences, Optoelectronics, Direct and indirect band gaps, Thin film, 0210 nano-technology, business, Sol-gel
Abstract: Zinc oxide (ZnO) is a II–VI group semiconductor with a wide direct bandgap and is an important material for various fields of industry and high-technological applications. The effects of thickness, annealing process in N2 and air, optical properties, and morphology of ZnO thin-films are studied. A low-cost sol–gel spin-coating technique is used in this study for the simple synthesis of eco-friendly ZnO multilayer films deposited on (100)-oriented silicon substrates ranging from 150 to 600 nm by adjusting the spin coating rate. The ZnO sol–gel thin-films using precursor solutions of molarity 0.75 M exhibit an average optical transparency above 98%, with an optical band gap energy of 3.42 eV. The c-axis (002) orientation of the ZnO thin-films annealed at 400 °C were mainly influenced by the thickness of the multilayer, which is of interest for piezoelectric applications. These results demonstrate that a low-temperature method can be used to produce an eco-friendly, cost-effective ZnO sol–gel that is compatible with a complementary metal-oxide-semiconductor (CMOS) and integrated-circuits (IC).
Published: 2021
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26. Engineering a Robust Flat Band in III–V Semiconductor Heterostructures

Author: Xavier Wallart, Daniel Vanmaekelbergh, Gilles Patriarche, David Troadec, Guillaume Fleury, Bruno Grandidier, Christophe Delerue, Nathali Alexandra Franchina Vergel, Maxime Berthe, Ludovic Desplanque, C. Coinon, Yannick Lambert, Tao Xu, François Vaurette, Davide Sciacca, Dmitri A. Yarekha, L. Christiaan Post, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Debye Institute for Nanomaterials Science, Utrecht University [Utrecht], Laboratoire de Chimie des Polymères Organiques (LCPO), Université de Bordeaux (UB)-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Team 4 LCPO : Polymer Materials for Electronic, Energy, Information and Communication Technologies, Université de Bordeaux (UB)-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Bordeaux (UB)-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Sino-European School of Technology, University of Shanghai [Shanghai], Physique - IEMN (PHYSIQUE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), Dutch Research Council (NWO Chemistry - Toppunt 'Superficial superstructures'), Natural Science Foundation of Shanghai (19ZR1419500), Renatech Network, PCMP PCP, ANR-16-CE24-0007,Dirac-III-V,Super-réseau d'antipoints de Dirac pour les électrons dans les semiconducteurs III-V(2016), ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), ANR-17-CE09-0021,GERMANENE,Croissance de germanene sur substrats à bande interdite(2017), European Project: FIRST STEP, Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Université de Bordeaux (UB)-Institut de Chimie du CNRS (INC), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Université de Bordeaux (UB)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Université de Bordeaux (UB)-Institut de Chimie du CNRS (INC), Physique-IEMN (PHYSIQUE-IEMN), and Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN)
Subjects: Materials science, tight binding calculations, quantum well, flat band, Scanning tunneling spectroscopy, band engineering, Bioengineering, 02 engineering and technology, Electron, Lattice constant, General Materials Science, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Electronic band structure, Lithography, ComputingMilieux_MISCELLANEOUS, Quantum well, block copolymer lithography, business.industry, Mechanical Engineering, Heterojunction, disorder, General Chemistry, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Two-dimensional lattice, Quantum dot, scanning tunneling spectroscopy, Optoelectronics, III−V semiconductor, 0210 nano-technology, business
Abstract: Electron states in semiconductor materials can be modified by quantum confinement. Adding to semiconductor heterostructures the concept of lateral geometry offers the possibility to further tailor the electronic band structure with the creation of unique flat bands. Using block copolymer lithography, we describe the design, fabrication, and characterization of multiorbital bands in a honeycomb In0.53Ga0.47As/InP heterostructure quantum well with a lattice constant of 21 nm. Thanks to an optimized surface quality, scanning tunnelling spectroscopy reveals the existence of a strong resonance localized between the lattice sites, signature of a p-orbital flat band. Together with theoretical computations, the impact of the nanopatterning imperfections on the band structure is examined. We show that the flat band is protected against the lateral and vertical disorder, making this industry-standard system particularly attractive for the study of exotic phases of matter.
Published: 2020
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27. Full-Band Quantum Transport of Heterojunction Electron Devices With Empirical Pseudopotentials

Author: David Esseni, Marco G. Pala, Adel M'foukh, Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)
Subjects: heterojunctions, Materials science, Semiconductor device modeling, Non-equilibrium thermodynamics, Electron, 01 natural sciences, Quantum transport, Empirical pseudopotential, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, quantum transport, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], Quantum tunnelling, Diode, 010302 applied physics, business.industry, NEGF, Heterojunction, Electronic devices, empirical pseudopotential, nonequilibrium Green's function (NEGF), Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Electronic, Optical and Magnetic Materials, Semiconductor, electronic devices, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, business
Abstract: International audience; This paper presents the methodology, implementation and application of a full-band quantum transport model based on the non-equilibrium Green's function formalism and the empirical pseudopotentials. In particular the paper reports the treatment of heterojunctions between lattice matched semiconductors, comprising a gradual transition region described according to a virtual crystal approximation. Our approach entails several numerical techniques to make the full-band quantum transport method computationally affordable, and thus enable robust and efficient self-consistent device simulations. Then we employ our simulation scheme for the analysis of some exemplary devices based on quantum tunnelling, such as an Esaki tunnelling diode, as well as n-and p-type heterojunction Tunnel FETs. In particular we investigate the influence on the current-voltage characteristics of the width of the heterojunction transition region. We observe that a gradual transition region mainly affects the device characteristics by lengthening the tunnelling path at the heterojunction, which has a different impact on device current depending on the external bias conditions.
Published: 2020
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28. A Millimeter-Wave Substrate Integrated Waveguide Filter in Si-BCB Technology

Author: Corsi, Jordan, Acri, Giuseppe, Moulin, Maxime, Zerounian, Nicolas, Grimault-Jacquin, Anne-Sophie, Vincent, Loïc, Ducournau, Guillaume, Aniel, Frédéric, Podevin, Florence, Ferrari, Philippe, Pistono, Emmanuel, Reliable RF and Mixed-signal Systems (TIMA-RMS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), This work has received support under the ANR TERAPACIPODE project, grant ANR-16-CE24-0031-01 of the French Agence Nationale de la Recherche. The samples preparation is performed in the Technology Facility of the Center for Nanoscience and Nanotechnology in the FrenchRenatech network., EuMIC/EuMC/EuMW, and ANR-16-CE24-0031,Terapacipode,Démonstration de circuits passifs sur Polymère dans la gamme THz(2016)
Subjects: [SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract: International audience; In this paper the design, measurements and retro-simulations of a 110-GHz 5th-order Chebyshev filter, based on substrate integrated waveguide in a 30−μm thick BenzoCycloButene (BCB) above-IC technology, are presented. A center frequency of 101.5 GHz, corresponding to a 8.5-GHz frequency shift towards low frequencies, and 11.8% of fractional bandwidth are measured. The filter presents 4.6-dB of insertion loss and a low return loss of 17.5 dB in the passband. Thanks to optical profilometer measurements, a deformation of the top metallic cover of the SIW structures was observed. Electromagnetic simulations taking this top surface deformation into account allows recovering the measured filter behaviour with the center frequency shift. Thus, this BCB above-IC technology seems promising for the design of passive circuits at higher frequencies, at which substrate heights of 30 μm are more appropriate.
Published: 2022
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29. Polarization-resolved photoluminescence study of an atom probe tip containing a ZnO-(Mg,Zn)O heterostructure

Author: Pradip Dalapati, Eric Weikum, Georges Beainy, Enrico Di Russo, Jonathan Houard, Simona Moldovan, Angela Vella, Jean Michel Chauveau, Maxime Hugues, Nolwenn Le Biavan, Maria Tchernycheva, François H. Julien, Zineb Saghi, Lorenzo Rigutti, Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Nagoya Institute of Technology (NIT), Université Côte d'Azur (UCA), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and ANR-13-JS10-0001,TAPOTER,Sonde atomique tomographique et spectroscopie optique: une approche couplée(2013)
Subjects: [PHYS]Physics [physics], polarization, atom probe tomography, heterostructures, nanoscale sample, Photoluminescence polarization oxides heterostructures quantum well atom probe tomography nanoscale sample, quantum well, oxides, Photoluminescence
Abstract: SPIE OPTO 2022, San Francisco, California, United States; International audience; We studied polarization-resolved photoluminescence originating from a ZnO-(Mg,Zn)O quantum well heterostucture embedded within an atom probe tip, i.e. a nanoscale needle-shaped sample with apex radius of several tens of nm, prepared by focused ion beam. The study was carried out within a photonic atom probe before the atom probe analysis of the sample. This setup allows for the analysis of the polarization of the photoluminescence emitted by the tip and for its orientation around its axis. While the photoluminescence emitted by bulk ZnO and by the (Mg,Zn)O alloy is strongly polarized along the tip axis, coinciding with the crystal [1-100] axis, the ZnO/(Mg,Zn)O quantum well luminescence appears to be strongly polarized along its in-plane direction, perpendicular to the crystal [1-100] axis. Finite-difference time domain calculations provide a key for the interpretation of these results in terms of selection rules and of effects related to the waveguide effect of the tip.
Published: 2022
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30. Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN

Author: Tarik Moudakir, Suresh Sundaram, Paul L. Voss, Simon Gautier, Phuong Vuong, Stefano Leone, Fouad Benkhelifa, Jean-Paul Salvestrini, Adama Mballo, Abdallah Ougazzaden, Gilles Patriarche, Soufiane Karrakchou, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Fraunhofer Institute for Applied Solid State Physics (Fraunhofer IAF), Fraunhofer (Fraunhofer-Gesellschaft), ANR Labex Ganex, and ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011)
Subjects: Materials science, mechanical transfer, Diffusion, semiconductors, 02 engineering and technology, High-electron-mobility transistor, 010402 general chemistry, 01 natural sciences, flexible (opto) electronics, transferrable nanodevices, [SPI.MECA.MEMA]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Mechanics of materials [physics.class-ph], General Materials Science, 2D boron nitride, business.industry, Delamination, Heterojunction, Adhesion, III-nitrides, 021001 nanoscience & nanotechnology, [SPI.TRON]Engineering Sciences [physics]/Electronics, 0104 chemical sciences, Semiconductor, Sapphire, Optoelectronics, 0210 nano-technology, business, Layer (electronics)
Abstract: International audience; Hexagonal boron nitride (h-BN) can be used as a p-doped material in wide-bandgap optoelectronic heterostructures or as a release layer to allow lift-off of grown three-dimensional (3D) GaN-based devices. To date, there have been no studies of factors that lead to or prevent lift-off and/or spontaneous delamination of layers. Here, we report a unique approach of controlling the adhesion of this layered material, which can result in both desired lift-off layered h-BN and mechanically inseparable robust h-BN layers. This is accomplished by controlling the diffusion of Al atoms into h-BN from AlN buffers grown on h-BN/sapphire. We present evidence of Al diffusion into h-BN for AlN buffers grown at high temperatures compared to conventional-temperature AlN buffers. Further evidence that the Al content in BN controls lift-off is provided by comparison of two alloys, Al 0.03 B 0.97 N/sapphire and Al 0.17 B 0.83 N/sapphire. Moreover, we tested that management of Al diffusion controls the mechanical adhesion of high-electron-mobility transistor (HEMT) devices grown on AlN/h-BN/sapphire. The results extend the control of two-dimensional (2D)/3D hetero-epitaxy and bring h-BN closer to industrial application in optoelectronics.
Published: 2020
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31. Mode Locked Laser Phase Noise Reduction Under Optical Feedback for Coherent DWDM Communication

Author: Cosimo Calo, Guy Aubin, Theo Verolet, Colm Browning, Elias Giacoumidis, Liam P. Barry, Kamel Merghem, Yi Lin, K. Mekhazni, Abderrahim Ramdane, Amol Delmade, Francois Lelarge, Alexandre Shen, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), School of Electronic Engineering [Dublin] (Dublin City University (DCU)), Institut Polytechnique de Paris (IP Paris), Département Electronique et Physique (EPH), Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP), Traitement de l'Information Pour Images et Communications (TIPIC-SAMOVAR), Services répartis, Architectures, MOdélisation, Validation, Administration des Réseaux (SAMOVAR), Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP)-Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP), Almae Technologies, Alcatel-Thales III-V Lab (III-V Lab), and THALES
Subjects: Physics, business.industry, Phase noise, Physics::Optics, Semiconductor mode locked lasers, Coherent transmission, 02 engineering and technology, Laser, Atomic and Molecular Physics, and Optics, law.invention, Longitudinal mode, Laser linewidth, 020210 optoelectronics & photonics, Mode-locking, Transmission (telecommunications), Optical frequency comb, law, Wavelength-division multiplexing, Broadband, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Optical feedback, business
Abstract: International audience; Single section quantum dash (QDash) mode locked lasers (MLL) can provide a flat and broadband optical frequency comb with low energy consumption, operational simplicity and large-scale low-cost production possibilities. MLL longitudinal modes can be employed as single carriers with a regular spectral spacing in a dense wavelength division multiplexing (DWDM) link, making them promising components for next generation DWDM transceivers. However, individual modes of a MLL suffer from relatively high phase noise while high capacity coherent transmission requires carriers with low phase noise. Optical feedback, which is a well-known method to reduce the linewidth of a single mode laser, can be used to stabilize comb lasers. This paper reports on the investigation of phase noise properties of comb lines delivered from a single section QDash MLL under optical feedback and shows that each MLL longitudinal mode optical linewidth can be drastically narrowed. It enables coherent transmission with extended link budget over 50 km at Tbit/s line rates.
Published: 2020
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32. Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region

Author: Mathieu Bertrand, Philippe Boucaud, Isabelle Sagnes, Sébastien Sauvage, Vincent Reboud, Moustafa El Kurdi, Riazul Arefin, Konstantinos Pantzas, Jérémie Chrétien, Binbin Wang, Anas Elbaz, Gilles Patriarche, Alexei Chelnokov, Lara Casiez, Frederic Boeuf, Etienne Herth, Nicolas Pauc, Razvigor Ossikovski, Emilie Sakat, Antonino Foti, Jean-Michel Hartmann, Xavier Checoury, Vincent Calvo, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-17-CE24-0015,ELEGANTE,Laser GeSn sur silicium sous pompagae électrique(2017), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), and Université Nice Sophia Antipolis (... - 2019) (UNS)
Subjects: Materials science, Silicon, FOS: Physical sciences, chemistry.chemical_element, Germanium, Applied Physics (physics.app-ph), 02 engineering and technology, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, law.invention, 010309 optics, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, Electrical and Electronic Engineering, Electronic band structure, business.industry, Physics - Applied Physics, 021001 nanoscience & nanotechnology, Laser, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, chemistry, Content (measure theory), [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Direct and indirect band gaps, 0210 nano-technology, business, Lasing threshold, Order of magnitude, Optics (physics.optics), Physics - Optics, Biotechnology
Abstract: GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack of defect management and from high threshold densities. In this work we examine the lasing characteristics of GeSn alloys with Sn contents ranging from 7 \% to 10.5 \%. The GeSn layers were patterned into suspended microdisk cavities with different diameters in the 4-\SI{8 }{\micro\meter} range. We evidence direct band gap in GeSn with 7 \% of Sn and lasing at 2-\SI{2.3 }{\micro\meter} wavelength under optical injection with reproducible lasing thresholds around \SI{10 }{\kilo\watt\per\square\centi\meter}, lower by one order of magnitude as compared to the literature. These results were obtained after the removal of the dense array of misfit dislocations in the active region of the GeSn microdisk cavities. The results offer new perspectives for future designs of GeSn-based laser sources., 30 pages, 9 figures
Published: 2020
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33. Experiment and analysis of the effect of BCB sealing ring flatness on BCB cap transfer packaging

Author: Seonho Seok, Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Parametric analysis, polymer, Flatness (systems theory), packaging, 02 engineering and technology, engineering.material, 01 natural sciences, [SPI]Engineering Sciences [physics], Coating, Si substrate, 0103 physical sciences, Wafer, Electrical and Electronic Engineering, Composite material, 010302 applied physics, FEM, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Hardware and Architecture, engineering, BCB sealing ring, Flatness, Dry etching, 0210 nano-technology
Abstract: International audience; This paper presents the effect of BCB sealing ring flatness on BCB bonding for wafer-scale BCB cap transfer packaging. BCB sealing ring has shown partial bonding or full bonding depending on its flatness. It is found that the principal cause of the partial bonding is due to non-flat BCB sealing ring caused by multilayer BCB coating process. As a solution, BCB dry etching has been proposed to improve the flatness of the BCB sealing ring for full BCB bonding. Besides, partial bonding of BCB ring has been analyzed through FEM modeling of BCB cap with a non-flat sealing ring. The FEM model consists of Si carrier wafer, BCB cap, and Si target substrate. Unique load is applying pressure on top of Si carrier wafer like wafer-scale bonding. The role of applying pressure is to get BCB sealing ring to be contacted and expand bondable area with target Si substrate. As BCB sealing ring is bonded through BCB polymerization by holding the pressure for 1 hour at 250 °C, mechanical properties of virgin BCB sealing ring has been changed during bonding. Thus, it has been chosen as variable for parametric analysis. Also, BCB cap dimension has been used as another parameter for the parametric analysis.
Published: 2020
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34. Les cellules solaires ultrafines

Author: Andrea Cattoni, Stéphane Collin, Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)
Subjects: [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract: International audience; Le photovoltaïque est devenu compétitif par rapport aux autres sources d’énergie. Il reste néanmoins beaucoup de progrès technologiques possibles. Aujourd’hui, la diminution de l’épaisseur des cellules solaires peut devenir l'un des éléments clés pour développer des cellules solaires à la fois moins chères et plus efficaces. Nous proposons une revue de l’état de l’art des cellules solaires ultrafines, des stratégies pour marier nanophotonique et photovoltaïque, et des perspectives offertes par la démonstration récente de cellules solaires de près de 20 % d’efficacité et seulement de 200 nm d’épaisseur.
Published: 2020
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35. 1.73 eV AlGaAs/InGaP heterojunction solar cell grown by MBE with 18.7% efficiency

Author: Adrien Bercegol, Laurent Lombez, Stéphane Collin, Jean-Christophe Harmand, Ahmed Ben Slimane, Xavier Lafosse, Amadeo Michaud, O. Mauguin, Institut Photovoltaïque d’Ile-de-France (UMR) (IPVF), École polytechnique (X)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-TOTAL FINA ELF-EDF (EDF)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF)-Air Liquide [Siège Social], Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, MBE, 02 engineering and technology, 01 natural sciences, 7. Clean energy, law.invention, 1.7eV, law, 0103 physical sciences, Solar cell, Electrical and Electronic Engineering, III-V solar cells, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Renewable Energy, Sustainability and the Environment, business.industry, Heterojunction, heterostructure, 021001 nanoscience & nanotechnology, Condensed Matter Physics, InGaP, Electronic, Optical and Magnetic Materials, AlGaAs, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business
Abstract: International audience; We report on AlGaAs-based heterojunction solar cells grown by solid source molecu- lar beam epitaxy (MBE). We investigate InGaP and AlGaAs material quality and we demonstrate significant efficiency improvements by combining the best of each alloy: a thick p-AlGaAs base with tunable bandgap, and a thin 50 nm n-InGaP emitter separated by a thin intrinsic AlGaAs layer. We report a certified solar cell conversion efficiency of 18.7% with a 2-μm-thick AlGaAs layer and a bandgap of 1.73 eV, suit- able for high efficiency Si-based tandem devices.
Published: 2020
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36. Reflective Back Contacts for Ultrathin Cu(In,Ga)Se2-Based Solar Cells

Author: Marie Jubault, Wei-Chao Chen, Lars Riekehr, Marika Edoff, Negar Naghavi, Jan Keller, Julie Goffard, Louis Gouillart, Andrea Cattoni, Stéphane Collin, Institut Photovoltaïque d’Ile-de-France (UMR) (IPVF), École polytechnique (X)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-TOTAL FINA ELF-EDF (EDF)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF)-Air Liquide [Siège Social], Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Uppsala University, Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP), EDF R&D (EDF R&D), EDF (EDF)-EDF (EDF)-Centre National de la Recherche Scientifique (CNRS)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC), and This work was supported by the ARCIGS-M Project, as part of the European Union’s Horizon 2020 Research and Innovation Program under Grant 720887.
Subjects: Materials science, Annealing (metallurgy), 02 engineering and technology, 01 natural sciences, 7. Clean energy, [SPI.MAT]Engineering Sciences [physics]/Materials, photovoltaic, Cu)(In, Ga)Se 2, In2O3:Sn, 0103 physical sciences, Electrical and Electronic Engineering, 010302 applied physics, (Ag, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Bilayer, Photovoltaic system, reflective back contacts, Cu(InGa)Se2, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Copper indium gallium selenide solar cells, Electronic, Optical and Magnetic Materials, Silver mirror, Indium tin oxide, Ultra-thin Cu(In, Optoelectronics, light trapping, Quantum efficiency, 0210 nano-technology, business, ultrathin, Single layer
Abstract: International audience; We report on the development of highly reflective back contacts (RBCs) made of multilayer stacks for ultrathin CIGS solar cells. Two architectures are compared: they are made of a silver mirror coated either with a single layer of In2O3:Sn (ITO) or with a bilayer of ZnO:Al/ITO. Due to the improvement of CIGS rear reflectance, both back contacts result in a significant external quantum efficiency enhancement, in agreement with optical simulations. However, solar cells fabricated with Ag/ITO back contacts exhibit a strong shunting behavior. The key role of the ZnO:Al layer to control the morphology of the top ITO layer and to avoid silver diffusion through the back contact is highlighted. For a 500-nm-thick CIGS layer, this optimized RBC leads to a best cell with a short-circuit current of 27.8 mA/cm2 (+2.2 mA/cm2 as compared to a Mo back contact) and a 12.2%-efficiency (+2.5% absolute).
Published: 2020
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37. Stable and high yield growth of GaP and In0.2Ga0.8As nanowire arrays using In as a catalyst

Author: Andrea Scaccabarozzi, Andrea Cattoni, Frank Glas, Fabrice Oehler, Jean-Christophe Harmand, Gilles Patriarche, Stéphane Collin, Laurent Travers, Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, Materials science, Yield (engineering), Silicon, business.industry, Nanowire, chemistry.chemical_element, 02 engineering and technology, Crystal structure, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, Contact angle, chemistry, law, 0103 physical sciences, Optoelectronics, General Materials Science, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Crystallization, 0210 nano-technology, business, Indium, Molecular beam epitaxy
Abstract: International audience; We report the first investigation of indium (In) as the vapor-liquid-solid catalyst of GaP and GaAs nanowires by molecular beam epitaxy. A strong asymmetry in the Ga distribution between the liquid and solid phases allows one to obtain pure GaP and In 0.2 Ga 0.8 As nanowires while the liquid catalyst remains nearly pure In. This uncommon In catalyst presents several advantages. First, the nanowire morphology can be tuned by changing the In flux alone, independently of the Ga and group V fluxes. Second, the nanowire crystal structure always remains cubic during steady state growth and catalyst crystallization, despite the low contact angle of the liquid droplet measured after growth (95 •). Third, the vertical yield of In-catalyzed GaP and (InGa)As nanowires arrays on patterned silicon substrates increases dramatically. Combining straight sidewalls, controllable morphologies and a high vertical yield, In-catalysts provide an alternative to the standard Au or Ga alloys for the bottom-up growth of large scale homogeneous arrays of (InGa)As or GaP nanowires. We note that the SET and NT curves nearly coincide over all 78 the explored composition range. This typical of NW growth and 79 was already observed by Glas on [Ga]-(AlGa)As NWs 34. It relates 80 to the low concentration of group V in the liquid catalyst, as com-81 puted using SET (see Supplementary Information †) or deduced 82 from other experiments 36. 83 From both NT and SET, we find that the Ga distribution is 84 strongly asymmetric. This particular Ga distribution is not unique 85 to our system and similar curves were calculated for ternary 86 [Au]-(InGa)As NWs using NT 25. These fast changes in the solid 87 (x) at near constant liquid composition (y) are often hindering 88 the fabrication of NW with uniform composition. Yet, away from 89 these abrupt changes, the solid composition varies slowly over 90 large ranges of liquid composition. Most relevant to the present 91 work, Ga contents (x) in solid In 1−x Ga x P and In 1−x Ga x As reach 92 near unity while the Ga fractions (y) in the liquid remain below 93 a few atomic percents. Hence the VLS growth of nearly pure GaP 94 and GaAs NWs from nearly pure In catalyst seems achievable. 95 3 Steady state growth 96 In light of the above calculations, we have proceeded to grow 97 [In]-(InGa)P and [In]-(InGa)As NWs on patterned Si(111) sub-98 strates using MBE (see experimental). Both In and Ga atoms are 99 supplied continuously to sustain the NW growth so that In evap-100 oration is compensated and the catalyst composition remains In-101 rich. Compared to [Ga]-GaAs or [Ga]-GaP NWs, typically grown 102 at 600 • C 15,36 , the substrate temperature is reduced to 520 • C to 103 limit the evaporation of In adatoms. Identical Si(111) wafers with 104 hexagonal arrays (300 nm pitch) of 50 nm diameter holes in a 105 14 nm thick silica mask are used to grow selectively the GaAs and 106 GaP NWs. The details of the growth and patterning procedures 107 can be found in the experimental section.
Published: 2020
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38. Ridge polariton laser: different from a semiconductor edge-emitting laser

Author: H. Souissi, M. Gromovyi, T. Gueye, C. Brimont, L. Doyennette, D.D Solnyshkov, G. Malpuech, E. Cambril, S. Bouchoule, B. Alloing, S. Rennesson, F. Semond, J. Zúñiga-Pérez, T. Guillet, Laboratoire Charles Coulomb (L2C), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Institut Pascal (IP), Centre National de la Recherche Scientifique (CNRS)-Université Clermont Auvergne (UCA)-Institut national polytechnique Clermont Auvergne (INP Clermont Auvergne), Université Clermont Auvergne (UCA)-Université Clermont Auvergne (UCA), Institut Universitaire de France (IUF), Ministère de l'Education nationale, de l’Enseignement supérieur et de la Recherche (M.E.N.E.S.R.), ANR-21-CE24-0019,NEWAVE,Nouveaux concepts pour micro- et nano-lasers à guide d'onde(2021), and Université Clermont Auvergne (UCA)
Subjects: [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], General Physics and Astronomy, Physics::Optics, FOS: Physical sciences, Physics::Atomic Physics, Physics - Optics, Optics (physics.optics)
Abstract: We experimentally demonstrate the difference between a ridge polariton laser and a conventional edge-emitting ridge laser operating under electron-hole population inversion. The horizontal laser cavities are 20-60µm long GaN etched ridge structures with vertical Bragg refectors. We investigatethe laser threshold under optical pumping and assess quantitatively the effect of a varying optically-pumped length. The laser effect is achieved for an exciton reservoir length of just 15% of the cavity length, which would not be possible in a conventional ridge laser, with an inversionlesspolaritonic gain about 10 times larger than in equivalent GaN lasers. This combination of a very short injection section and a strong gain paves the way to compact microlasers with nonlinear functionalities for integrated photonics.
Published: 2022
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39. Low intensity saturation of an ISB transition by a mid-IR quantum cascade laser

Author: Jeannin, Mathieu, Cosentino, Eduardo, Pirotta, Stefano, Malerba, Mario, Biasiol, Giorgio, Manceau, Jean-Michel, Colombelli, Raffaele, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratorio TASC (IOM CNR), National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), ANR-19-CE24-0003,SOLID,Couplage fort lumière-matière pour les détecteurs à cascade quantique(2019), ANR-17-CE24-0016,IRENA,NanoAntennes pour Emetteurs InfraRouge(2017), and European Project: 737017,MIRBOSE
Subjects: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], Condensed Matter - Mesoscale and Nanoscale Physics, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], Mesoscale and Nanoscale Physics (cond-mat.mes-hall), FOS: Physical sciences, Physics - Applied Physics, Applied Physics (physics.app-ph), Physics - Optics, Optics (physics.optics)
Abstract: We demonstrate that absorption saturation of a mid-infrared intersubband transition can be engineered to occur at moderate light intensities of the order of 10-20 kW$.$cm$^{-2}$ and at room temperature. The structure consists of an array of metal-semiconductor-metal patches hosting a judiciously designed 253 nm thick GaAs/AlGaAs semiconductor heterostructure. At low incident intensity the structure operates in the strong light-matter coupling regime and exhibits two absorption peaks at wavelengths close to 8.9 $\mu$m. Saturation appears as a transition to the weak coupling regime - and therefore to a single-peaked absorption - when increasing the incident intensity. Comparison with a coupled mode theory model explains the data and permits to infer the relevant system parameters. When the pump laser is tuned at the cavity frequency, the reflectivity decreases with increasing incident intensity. When instead the laser is tuned at the polariton frequencies, the reflectivity non-linearly increases with increasing incident intensity. At those wavelengths the system therefore mimics the behavior of a saturable absorption mirror (SESAM) in the mid-IR range, a technology that is currently missing.
Published: 2022
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40. Double-crowned 2D semiconductor nanoplatelets with bicolor power-tunable emission

Author: Corentin Dabard, Victor Guilloux, Charlie Gréboval, Hong Po, Lina Makke, Ningyuan Fu, Xiang Zhen Xu, Mathieu G. Silly, Gilles Patriarche, Emmanuel Lhuillier, Thierry Barisien, Juan I. Climente, Benjamin T. Diroll, Sandrine Ithurria, Laboratoire de Physique et d'Etude des Matériaux (UMR 8213) (LPEM), Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris (ESPCI Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Photonique et cohérence de spin (INSP-E12), Institut des Nanosciences de Paris (INSP), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Physico-chimie et dynamique des surfaces (INSP-E6), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Universitat Jaume I, Argonne National Laboratory [Lemont] (ANL), ANR-19-CE24-0022,COPIN,Détecteur plasmonique à nanoCristaux colloïdaux: une nouvelle filière pour l'OPtoélectronique INfrarouge(2019), ANR-19-CE09-0017,FRONTAL,Nanocristaux Colloïdaux Dopés Infrarouges(2019), ANR-18-CE30-0023,IPER-Nano2,Nanocristaux de perovskite inorganique pour la nanophotonique(2018), ANR-21-CE24-0012,BRIGHT,Diode électroluminescente infrarouge brillante par exaltation du couplage lumière-matière(2021), ANR-20-ASTR-0008,NITquantum,Design et fabrication d'un plan focal dans le proche infrarouge à base de nanocrisrtaux(2020), ANR-19-CE09-0026,GRaSkop,Tuning Giant Rashba Spin-Orbit Coupling in Polar Single Layer Transition Metal Dichalcogenides(2019), ANR-21-CE09-0029,MixDFerro,Heterostructures à dimensions mixtes sous contrôle ferroélectrique 2D(2021), European Project: 756225,blackQD, and European Project: 853049,ne2dem
Subjects: Multidisciplinary, General Physics and Astronomy, [CHIM.MATE]Chemical Sciences/Material chemistry, General Chemistry, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], General Biochemistry, Genetics and Molecular Biology
Abstract: Nanocrystals (NCs) are now established building blocks for optoelectronics and their use as down converters for large gamut displays has been their first mass market. NC integration relies on a combination of green and red NCs into a blend, which rises post-growth formulation issues. A careful engineering of the NCs may enable dual emissions from a single NC population which violates Kasha’s rule, which stipulates that emission should occur at the band edge. Thus, in addition to an attentive control of band alignment to obtain green and red signals, non-radiative decay paths also have to be carefully slowed down to enable emission away from the ground state. Here, we demonstrate that core/crown/crown 2D nanoplatelets (NPLs), made of CdSe/CdTe/CdSe, can combine a large volume and a type-II band alignment enabling simultaneously red and narrow green emissions. Moreover, we demonstrate that the ratio of the two emissions can be tuned by the incident power, which results in a saturation of the red emission due to non-radiative Auger recombination that affects this emission much stronger than the green one. Finally, we also show that dual-color, power tunable, emission can be obtained through an electrical excitation.
Published: 2022
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41. Heat equilibration of integer and fractional quantum Hall edge modes in graphene

Author: G. Le Breton, R. Delagrange, Y. Hong, M. Garg, K. Watanabe, T. Taniguchi, R. Ribeiro-Palau, P. Roulleau, P. Roche, F. D. Parmentier, Groupe Nano-Electronique (GNE), Service de physique de l'état condensé (SPEC - UMR3680), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), and Université de Tsukuba = University of Tsukuba
Subjects: Condensed Matter - Mesoscale and Nanoscale Physics, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), General Physics and Astronomy, FOS: Physical sciences, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall]
Abstract: Hole-conjugate states of the fractional quantum Hall effect host counter-propagating edge channels which are thought to exchange charge and energy. These exchanges have been the subject of extensive theoretical and experimental works; in particular, it is yet unclear if the presence of integer quantum Hall edge channels stemming from fully filled Landau levels affects heat equilibration along the edge. In this letter, we present heat transport measurements in quantum Hall states of graphene demonstrating that the integer channels can strongly equilibrate with the fractional ones, leading to markedly different regimes of quantized heat transport that depend on edge electrostatics. Our results allow for a better comprehension of the complex edge physics in the fractional quantum Hall regime., Comment: Includes supplemental material
Published: 2022
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42. Pixel device based on a quantum well: Preliminary results on gate dielectrics

Author: Geraldine Hallais, Charles Renard, Antoine Barbier, Eric Imbernon, Nicolas Fourches, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratoire Nano-Magnétisme et Oxydes (LNO), Service de physique de l'état condensé (SPEC - UMR3680), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Département d'Electronique, des Détecteurs et d'Informatique pour la Physique (ex SEDI) (DEDIP), Institut de Recherches sur les lois Fondamentales de l'Univers (IRFU), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay
Subjects: Gate oxides, Nuclear and High Energy Physics, Quantum-well, Particle physics, Pixel, Pixel detector, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Instrumentation, MOS transistors
Abstract: International audience; The development of pixel arrays close to the interaction point in large detector systems used in high energy physics require high radiation hardness for the pixels and their readout. A pixel device based on a quantum well, called the DoTPiX uses a sensing n-channel MOS device with a control gate. A buried Ge layer acts as a current modulation gate, which localize holes generated by impinging particles. The DotPIX buried Ge gate is obtained by low temperature epitaxial growth of Ge on Si. We have started to study the different ways to achieve these prerequisites: the need for a low temperature budget to reduce the Ge and Si intermixing, which may be detrimental to the DoTPiX operation. The use of Si thermal oxide is investigated together with that of deposited oxide (Hafnium Oxide for example), which differs from the Silicon Dioxide. The possibility of a combination of thermal silicon dioxide and deposited oxides opens another possibility in this study.
Published: 2023
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43. In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy

Author: A Bucamp, C Coinon, S Lepilliet, D Troadec, G Patriarche, M H Diallo, V Avramovic, K Haddadi, X Wallart, L Desplanque, EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN ), This work was partly supported by the French Renatech network, the European Community, the Région Hauts de France and the Agence Nationale pour la Recherche for funding the Titan Themis microscope through the EQUIPEX TEMPOS (10-EQPX-0050)., Renatech Network, PCMP CHOP, CMNF, and ANR-10-EQPX-0050,TEMPOS,Microscopie electronique en transmission sur le plateau Palaiseau Orsay Saclay(2010)
Subjects: in-plane nanowire, Esaki tunnel diodes, molecular beam epitaxy, Mechanics of Materials, Mechanical Engineering, General Materials Science, Bioengineering, General Chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, selective area growth
Abstract: In-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by selective area molecular beam epitaxy with two different architectures: either radial InGaAs core/Ga(As)Sb shell nanowires or axial InGaAs/GaSb heterojunctions. In the former case, we unveil the impact of strain relaxation and alloy composition fluctuations at the nanoscale on the tunneling properties of the diodes, whereas in the latter case we demonstrate that template assisted molecular beam epitaxy can be used to achieve a very precise control of tunnel diodes dimensions at the nanoscale with a scalable process. In both cases, negative differential resistances with large peak current densities are achieved.
Published: 2021
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44. Unified Description of Saturation and Bistability of Intersubband Transitions in the Weak and Strong Light-Matter Coupling Regimes

Author: Mathieu Jeannin, Raffaele Colombelli, Jean-Michel Manceau, Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)
Subjects: Bistability, FOS: Physical sciences, General Physics and Astronomy, Applied Physics (physics.app-ph), 02 engineering and technology, 01 natural sciences, Resonator, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, 010306 general physics, ComputingMilieux_MISCELLANEOUS, Quantum well, Physics, Coupling, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed matter physics, business.industry, Saturable absorption, Physics - Applied Physics, 021001 nanoscience & nanotechnology, Semiconductor, Orders of magnitude (time), [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], 0210 nano-technology, business, Saturation (chemistry), Physics - Optics, Optics (physics.optics)
Abstract: We propose a unified description of intersubband absorption saturation for quantum wells inserted in a resonator, both in the weak and strong light-matter coupling regimes. We demonstrate how absorption saturation can be engineered. In particular, we show that the saturation intensity increases linearly with the doping in the strong coupling regime, while it remains doping independent in weak coupling. Hence, countering intuition, the most suitable region to exploit low saturation intensities is not the ultrastrong coupling regime, but is instead at the onset of the strong light-matter coupling. We further derive explicit conditions for the emergence of bistability. This Letter sets the path toward, as yet, nonexistent ultrafast midinfrared semiconductor saturable absorption mirrors (SESAMs) and bistable systems. As an example, we show how to design a midinfrared SESAM with a 3 orders of magnitude reduction in saturation intensity, down to ≈5 kW cm^{-2}.
Published: 2021
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45. Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring

Author: Ali Jaffal, Philippe Regreny, Nicolas Chauvin, Gilles Patriarche, Michel Gendry, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Spectroscopies et Nanomatériaux (INL - S&N), INL - Matériaux Fonctionnels et Nanostructures (INL - MFN), Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)
Subjects: Photoluminescence, Photon, Materials science, Nanowire, FOS: Physical sciences, Photodetector, Physics::Optics, Geometry, Applied Physics (physics.app-ph), 02 engineering and technology, 01 natural sciences, Condensed Matter::Materials Science, 0103 physical sciences, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, Condensed Matter - Materials Science, Linear polarization, Materials Science (cond-mat.mtrl-sci), Physics - Applied Physics, 021001 nanoscience & nanotechnology, Polarization (waves), Quantum dot, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology, Molecular beam epitaxy
Abstract: Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs) with an elongated top-view cross-section relying on the vapor-liquid-solid method using molecular beam epitaxy. By interrupting the rotation of the sample during the radial growth sequence of the InP shell, hexagonal asymmetric (HA) NWs with long/short cross-section axes were obtained instead of the usual symmetrical shape. Polarization-resolved photoluminescence measurements have revealed a significant influence of the asymmetric shaped NWs on the InAs QD emission polarization with the photons being mainly polarized parallel to the NW long cross-section axis. A degree of linear polarization (DLP) up to 91% is obtained, being at the state of the art for the reported DLP values from QD-NWs. More importantly, the growth protocol herein is fully compatible with the current applications of HA NWs covering a wide range of devices such as polarized light emitting diodes and photodetectors., 20 pages, 7 figures
Published: 2021
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46. Coulomb interactions and effective quantum inertia of charge carriers in a macroscopic conductor

Author: Pascal Degiovanni, Antonella Cavanna, B. Chenaud, Ulf Gennser, Adrien Delgard, Dominique Mailly, Christophe Chaubet, Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)
Subjects: Physics, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed matter physics, Scattering, Filling factor, FOS: Physical sciences, 02 engineering and technology, Quantum Hall effect, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 01 natural sciences, 3. Good health, Coherence length, Conductor, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, Coulomb, Charge carrier, 010306 general physics, 0210 nano-technology, Quantum, ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall]
Abstract: We study the low frequency admittance of a quantum Hall bar of size much larger than the electronic coherence length. We find that this macroscopic conductor behaves as an ideal quantum conductor with vanishing longitudinal resistance and purely inductive behavior up to f, 4 pages article with 4 figures, submitted to Physical Review B Letters, concatenated with 12 pages supplementary information (having 15 figures) in a 17 pages article with concantenated bibliography
Published: 2021
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47. Vibrational Resonance Amplification in a Thermo-Optic Optomechanical Nanocavity

Author: Guilhem Madiot, Sylvain Barbay, Rémy Braive, Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Bistability, Nanophotonics, FOS: Physical sciences, Physics::Optics, Bioengineering, 01 natural sciences, Signal, 010305 fluids & plasmas, Resonator, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, General Materials Science, Mechanical resonance, 010306 general physics, Photonic crystal, [PHYS]Physics [physics], Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, Mechanical Engineering, General Chemistry, Condensed Matter Physics, Coupling (physics), Modulation, Optoelectronics, business, Optics (physics.optics), Physics - Optics
Abstract: Vibrational resonance amplifies a weak low-frequency signal by use of an additional non-resonant high-frequency modulation. The realization of weak signal enhancement in integrated nonlinear optical nanocavities is of great interest for nanophotonic applications where optical signals may be of low power. Here, we report experimental observation of vibrational resonance in a thermo-optically bistable photonic crystal optomechanical resonator with an amplification up to +16 dB. The characterization of the bistability can interestingly be done using a mechanical resonance of the membrane, which is submitted to a strong thermo-elastic coupling with the cavity., 10 pages, 5 figures
Published: 2021
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48. Low-Overhead Implementation of Binarized Neural Networks Employing Robust 2T2R Resistive RAM Bridges

Author: Francois Andrieu, J-M. Portal, M. Ezzadeen, Marc Bocquet, Damien Querlioz, Bastien Giraud, J.-P. Noel, A. Majumdar, Laboratoire Fonctions Innovantes pour circuits Mixtes (LFIM), Université Grenoble Alpes (UGA)-Département Systèmes et Circuits Intégrés Numériques (DSCIN), Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)
Subjects: In-memory computing, Artificial neural network, Computer science, Binary Neural Network (BNN), Capacitive sensing, Integrated circuit, RRAM memory, Resistive random-access memory, law.invention, Memory management, POPCOUNT, Robustness (computer science), law, Electronic engineering, XNOR, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Bitwise operation, MNIST database
Abstract: International audience; The energy consumption associated with data movement between memory and processing units is the main roadblock for the massive deployment of edge Artificial Intelligence. To overcome this challenge, Binarized Neural Networks (BNN) coupled with RRAM-based in-or nearmemory computing constitute an appealing solution. However, proposals from the literature tend to involve significant periphery circuit overheads. In this work, we propose and demonstrate experimentally, on a fabricated hybrid CMOS-RRAM integrated circuit, a robust in-memory XOR operation based on a 2T2R cell used in a resistive bridge manner. With this architecture, the RRAM read operation and the BNN multiplication operation can be achieved simultaneously, requiring only inverters connected to each Source Line of the memory array, and the BNN POPCOUNT operation can be realized with an analog capacitive neuron. Based on our measurements and extensive Monte Carlo simulations, we validate that this approach is suitable for large neurons with a low error rate (3.12% of error considering the full range of POPCOUNT values). Based on the circuit simulation results, we highlight the resilience of this approach at the network level, with a minimal accuracy degradation on the MNIST (0.07%) and CIFAR-10 (0.35%) tasks with regards to software solutions.
Published: 2021
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49. Double-Heterojunction Bipolar Transistor as THz Detector for Communications

Author: I. Diouf, Virginie Nodjiadjim, Nina Diakonova, Muriel Riet, Annick Penarier, Frédéric Aniel, Luca Varani, Stéphane Blin, Nicolas Zerounian, Philippe Nouvel, Dominique Coquillat, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Modélisation et Spectroscopie THz (MOST), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Charles Coulomb (L2C), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), IEEE, and ANR-13-NANO-0008,NADIA,NAno Détecteurs Intégrés pour Applications terahertz(2013)
Subjects: Heterodyne, Materials science, business.industry, Heterojunction bipolar transistor, Transistor, Bipolar junction transistor, Detector, [PHYS.PHYS.PHYS-GEN-PH]Physics [physics]/Physics [physics]/General Physics [physics.gen-ph], law.invention, Hardware_GENERAL, law, Optoelectronics, Output impedance, Antenna (radio), business, Sensitivity (electronics)
Abstract: International audience; We investigate the use of an InP-based double-heterojunction bipolar transistor as a detector for wireless communications around 300~GHz. The sensitivity of the detector, along with its complex output impedance are characterized for a transistor (un)coupled to a log-spiral antenna, at different biases. A real-time uncompressed high-definition video signal is successfully transmitted at 1.5 Gbps in a heterodyne configuration.
Published: 2021
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50. Broadband Fourier-transform silicon nitride spectrometer with wide-area multiaperture input

Author: Pavel Cheben, Eric Cassan, Thi Thuy Duong Dinh, Laurent Vivien, Sebastien Cremer, Delphine Marris-Morini, Nathalie Vulliet, Frederic Boeuf, Carlos Alonso-Ramos, Sylvain Guerber, David González-Andrade, Aitor V. Velasco, Stephane Monfray, Agencia Estatal de Investigación (España), Comunidad de Madrid, European Commission, Agence Nationale de la Recherche (France), Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)
Subjects: Heterodyne, Silicon photonics, Materials science, Spectrometer, business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, Atomic and Molecular Physics, and Optics, 010309 optics, chemistry.chemical_compound, Optics, Silicon nitride, chemistry, 0103 physical sciences, Broadband, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Bandwidth (computing), 0210 nano-technology, business, Lithography, Throughput (business), ComputingMilieux_MISCELLANEOUS
Abstract: 4 pags., 5 figs., Integrated microspectrometers implemented in silicon photonic chips have gathered a great interest for diverse applications such as biological analysis, environmental monitoring, and remote sensing. These applications often demand high spectral resolution, broad operational bandwidth, and large optical throughput. Spatial heterodyne Fourier-transform (SHFT) spectrometers have been proposed to overcome the limited optical throughput of dispersive and speckle-based on-chip spectrometers. However, state-of-the-art SHFT spectrometers in near-infrared achieve large optical throughput only within a narrow operational bandwidth. Here we demonstrate for the first time, to the best of our knowledge, a broadband silicon nitride SHFT spectrometer with the largest light collecting multiaperture input (320 × 410 µm) ever implemented in an SHFT on-chip spectrometer. The device was fabricated using 248 nm deep-ultraviolet lithography, exhibiting over 13 dB of optical throughput improvement compared to a single-aperture device. The measured resolution varies between 29 and 49 pm within the 1260-1600 nm wavelength range., Spanish Ministry of Science and Innovation (MICINN) (RED2018-102768-T, RTI2018-097957-B-C33, TEC2015-71127-C2-1-R (FPI Scholarship BES-2016-077798)); Community of Madrid-FEDER funds (S2018/NMT-4326); Horizon 2020 Research and Innovation Program (Marie Sklodowska-Curie 734331); H2020 European Research Council (ERC POPSTAR 647342); European Commission (H2020- ICT-26127-2017 COSMICC 688516); French Industry Ministry (Nano2022 project under IPCEI program); Agence Nationale de la Recherche (ANR-MIRSPEC-17-CE09-0041
Published: 2021
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