1. First-Principles Calculations of Electronic Structure and Optical Properties of Si-doped Orthorhombic SrHfO3
- Author
-
Liu Qi-Jun, Liu Zheng-Tang, Fan Miaohai, and Feng Liping
- Subjects
Crystallography ,Materials science ,Lattice constant ,Band gap ,General Engineering ,Ionic bonding ,Density functional theory ,Orthorhombic crystal system ,Electronic structure ,Dielectric ,Electronic band structure ,Molecular physics - Abstract
The formation energy, the geometric structure, the electronic structure and the optical properties of pure and Si-doped orthorhombic SrHfO 3 with Si substituting Hf were studied by the first-principles method using plane-wave ultra-soft pseudo-potential calculation based on density functional theory. The negative formation energy results show the reactions from single elements to Si-doped SrHfO 3 are energetically favorable and that Si prefers entering the Hf sites rather than the Sr sites. The calculated equilibrium lattice constants of pure SrHfO 3 are in good agreement with previous experimental and theoretical results, and the substitution of Si for Hf results in a decrease in the lattice constants. The band structure indicates the band gap decreases after introduction of Si to Hf site. The Mulliken analysis and charge densities suggest that the Hf-O bond is mainly covalent, and the Sr-O bond is mainly ionic in Si-doped SrHfO 3 . The dielectric functions, the reflectivity, the absorption coefficient, the refractive index, and the energy-loss spectrum were also calculated to get a better understanding of optical properties of Si-doped SrHfO 3 .
- Published
- 2014