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5 results on '"Wen Qiye"'

1. Terahertz detection of polyimide films based on metal hole arrays

Author

赖伟恩 Lai Weien, 董凯 Dong Kai, 孙丹丹 Sun Dandan, 文岐业 Wen Qiye, and 张怀武 Zhang Huaiwu

Subjects
Metal, Materials science, business.industry, Terahertz radiation, visual_art, visual_art.visual_art_medium, Optoelectronics, Electrical and Electronic Engineering, business, Atomic and Molecular Physics, and Optics, Polyimide
Published
2013
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3. Experimental demonstration of a broadband terahertz absorber using SiO2 based metamaterial structures

Author

Yang Qinghui, Wen Qiye, Yulan Jing, Zhi Chen, Zhang Huaiwu, and Man-Man Mo

Subjects
Split-ring resonator, Optics, Materials science, business.industry, Terahertz radiation, Broadband, Far-infrared laser, Metamaterial absorber, Optoelectronics, Metamaterial, Dielectric, business, Absorption (electromagnetic radiation)
Abstract

In this presentation, we experimentally demonstrate a broadband absorber in the terahertz (THz) spectral band. A thin silicon dioxide (SiO2) film is used as dielectric spacer. The combination of different sizes of Al squares gives rise to an absorption bandwidth over 200GHz with absorption magnitude of 90%.

Published
2013
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4. Graphene based ultrafast all-optical terahertz modulator

Author

Wen Qiye, Hai-Tao Liu, Zhi Chen, Yang Qinghui, Yulan Jing, Zhang Huaiwu, Dan-Dan Sun, and Wei Tian

Subjects
Materials science, Silicon, business.industry, Graphene, Terahertz radiation, chemistry.chemical_element, Germanium, law.invention, Transmission (telecommunications), chemistry, Modulation, law, Broadband, Optoelectronics, business, Ultrashort pulse
Abstract

In this presentation, we proposed an all-optical broadband terahertz (THz) modulator based on single-layer graphene (SLG) on silicon or germanium. By illuminating the film with 808nm CW laser, the THz transmission decreased significantly. The modulation speed was measured at 340GHz to be as high as 0.5 MHz. This modulator has huge potential for real application.

Published
2013
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5. Electrically-driven metal-insulator transition of VO2 thin films in a nanoscale metal-oxide-metal device structure

Author

Yang Qinghui, Zhi Chen, Dong-Hong Qiu, Wen Qiye, Zhang Huaiwu, and Yulan Jing

Subjects
Fabrication, Materials science, business.industry, Orders of magnitude (temperature), Oxide, Threshold voltage, Metal, chemistry.chemical_compound, Nanoelectronics, chemistry, visual_art, visual_art.visual_art_medium, Optoelectronics, sense organs, Thin film, Metal–insulator transition, business
Abstract

We report the growth of vanadium dioxide (VO2) films on metal electrode with a thin SiO2 buffer and the fabrication of nanoscale metal-oxide-metal junction. The thermal-induced metal-insulator transition with a change of resistance of 2 orders of magnitude is observed and the threshold voltage is as low as 1.6V.

Published
2013
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