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We demonstrated an ultra-sensitive terahertz virus detection method combined with virus-sized gold nanogaps filled with Al2O3. Large-area high-density 20 nm-gap rectangular loop structures, containing a resonant frequency in the terahertz range, were fabricated on a 4-inch wafer using atomic layer lithography. When target viruses with a 60 nm diameter were located on the nanogaps, we observed a significant redshift of the resonant peak already with an average number of about 100 viruses per unit loop due to the strong field confinement and enhancement near the gap. Furthermore, when the virus was tightly attached to an etched gap like a bridge connecting metals, its sensitivity is doubled compared to the unetched gap, which resulted in 400% more resonance frequency shift per single virus particle than our previous work. Full-wave simulations and theoretical calculations based on modal expansions were in good agreement with the experiments, revealing that the resonant transmission spectrum was mostly determined by the change in refractive index in a two-dimensional-like optical hotspot near the nanogap. A further step could be taken to increase sensitivity by tuning nanogap-loops to the absorption frequencies associated with the intermolecular vibrational modes of the viruses and fingerprinting them as well.

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The spatial distribution of photogenerated carriers in atomically thin MoS

Vertical heterostructures of graphene and MoS2 are realized by successive growth of MoS2 and graphene, each by chemical vapor deposition. The MoS2 coverage on graphene is controlled by ozone treatment of graphene, which affects the absorption and aggregation of the nucleation promoter perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS) for MoS2 seeds on the graphene surface. Mostly single or bilayer MoS2 flakes are grown on graphene with negligible defects even after the ozone treatment and the high-temperature growth process (up to 650 °C). Efficient charge transfer in the grown heterostructures is observed in the photoluminescence and photoresponses of devices based on the heterostructures.

In this work, we demonstrated a phonon-polariton in the terahertz (THz) frequency range, generated in a crystallized lead halide perovskite film coated on metamaterials. When the metamaterial resonance was in tune with the phonon resonance of the perovskite film, Rabi splitting occurred due to the strong coupling between the resonances. The Rabi splitting energy was about 1.1 meV, which is larger than the metamaterial and phonon resonance line widths; the interaction potential estimation confirmed that the strong coupling regime was reached successfully. We were able to tune the polaritonic branches by varying the metamaterial resonance, thereby obtaining the dispersion curve with a clear anticrossing behavior. Additionally, we performed

In this study, we develop a 3D THz time-of-flight (TOF) imaging technique by using reflective optics to preserve the high-frequency components from a THz antenna. We use an Fe:InGaAs/InAlAs emitter containing relatively high-frequency components. THz-TOF imaging with asynchronous optical sampling (ASOPS) enables the rapid scanning of 100 Hz/scan with a time delay span of 100 ps. We characterize the transverse resolution using knife edge tests for a focal length of 5; the Rayleigh resolution has been measured at 1.0 mm at the focal plane. Conversely, the longitudinal resolution is determined by the temporal pulse width, confirmed with various gap structures enclosed by a quartz substrate. The phase analysis reveals that reflected waves from the top interface exhibit a phase shift when the gap is filled by high-indexed materials such as water but shows in-phase behavior when it is filled with air and low-indexed material. Our imaging tool was effective for inspecting the packaged chip with high lateral and longitudinal resolution. Importantly, the phase information in 2D and 3D images is shown to be a powerful tool in identifying the defect—in particular, delamination in the chip—which tends to be detrimental to the packaged chip’s stability.

We propose a theoretical model simulating ultrafast electron emission at the edge of a two-dimensional conducting sheet due to a strong field tunneling process in the presence of a static electric field. Under the assumption of a charge distribution following the square root law associated with a Sommerfeld half plane, the electric field was found to exhibit square-root dependence. The electron emission yield was estimated based on a Fowler-Nordheim tunneling, from which the resultant current flow was calculated by using the quasi-classical model. Importantly, we considered the number of the recoil electrons that do not contribute to the net current. We found a large variation in the nonlinearity of the power-dependence of the net field-emission yield; this is due to the combined contributions of the laser field irradiation and a static electric field. The validity of our model was confirmed based on experimental results obtained using devices with a nanometer-sized gap fabricated on a single layer of graphene.

Emerging nonvolatile resistive switching, also known as the memristor, works with a distinct concept that relies mainly on the change in the composition of the active materials, rather than to store the charge. Particularly for oxide-based memristors, the switching is often governed by the random and unpredicted temporal/spatial migration of oxygen defects, resulting in possessing limitations in terms of control over conduction channel formation and inability to regulate hysteresis loop opening. Therefore, site specific dynamic control of defect concentration in the active materials can offer a unique opportunity to realize on-demand regulation of memory storage and artificial intelligence capabilities. Here, high-performance, site-specific spatially scalable memristor devices are fabricated by stabilizing the conduction channel via manipulation of oxygen defects using electron-beam irradiation. Specifically, the memristors exhibit highly stable and electron-beam dose-regulated multilevel analog hysteresis loop opening with adjustable switching ratios even higher than 10

In this study, we proposed a fast and effective technique to remove residual poly(methyl methacrylate) (PMMA) after its use as a supporting layer for transferring graphene films on a large scale with high productivity. We utilized a methyl isobutyl ketone (MIBK) solution, which is commonly used to develop PMMA layers, for an e-beam lithography process. This was done because MIBK molecules tend to inflate the PMMA layer, weakening the link between PMMA and the graphene surface. Field-effect transistors were fabricated on the transferred graphene, with which we addressed the Dirac points and their carrier motilities. We observed that due to the reduced p-doping effects, the Dirac points were located closer to the zero-gate bias compared to those obtained using the acetone treatment. Finally, the average device mobility reached 5400 and 3900 cm2/Vs for holes and electrons, respectively. These values are more than five times the values obtained using the conventional acetone treatment.

Large-scale growth of mostly monolayer molybdenum disulfide (MoS2) on quartz, sapphire, SiO2/Si, and waveguide substrates is demonstrated by chemical vapor deposition with the same growth parameters. Centimeter-scale areas with large flakes and films of MoS2 on all the growth substrates are observed. The atomic force microscopy and Raman measurements indicate the synthesized MoS2 is monolayer with high quality and uniformity. The MoS2 field effect transistors based on the as-grown MoS2 exhibit carrier mobility of 1–2 cm2V−1s−1 and On/Off ratio of ~104 while showing large photoresponse. Our results provide a simple approach to realize MoS2 on various substrates for electronics and optoelectronics applications.

The band alignment in AlGaN/GaN HEMT devices was investigated using scanning photocurrent microscopy (SPCM) with UV and visible light sources. The polarity of the SPCM on the conduction channel exhibited a switching behavior from p-type to n-type response as the gate bias was increased. The flat-band voltage, which was higher than the DC turn-on voltage, indicates that an ohmic metallic contact was formed for electron transport. We obtained the band offset between the conduction band and the metal Fermi level, which yielded a value of 2.1 eV on average.

Next-generation electronic and optoelectronic devices require a high-quality channel layer. Graphene is a good candidate because of its high carrier mobility and unique ambipolar transport characteristics. However, the on/off ratio and photoresponsivity of graphene are typically low. Transition metal dichalcogenides (e.g., MoSe2) are semiconductors with high photoresponsivity but lower mobility than that of graphene. Here, we propose a graphene/MoSe2 barristor with a high-k ion-gel gate dielectric. It shows a high on/off ratio (3.3 × 104) and ambipolar behavior that is controlled by an external bias. The barristor exhibits very high external quantum efficiency (EQE, 66.3%) and photoresponsivity (285.0 mA/W). We demonstrate that an electric field applied to the gate electrode substantially modulates the photocurrent of the barristor, resulting in a high gate tuning ratio (1.50 μA/V). Therefore, this barristor shows potential for use as an ambipolar transistor with a high on/off ratio and a gate-tunable photodetector with a high EQE and responsivity. An approach that enhances control over charge carrier movement in graphene-based transistors may be useful in applications such as bendable circuits and light sensors. The difference in current flow when a transistor turns from on to off plays a critical role in determining device performance. Bae Ho Park from Konkuk University in Seoul, South Korea, and colleagues report that stacking graphene on top of another two-dimensional (2D) film of molybdenum selenide can lead to larger on/off current ratios than conventional graphene transistors. Optical and electrical characterizations revealed that the interface between the 2D films created a potential barrier that blocked current flow in the device’s off state without compromising graphene’s mechanical flexibility. Using an external voltage to modulate current flow through the barrier region also allowed the stacked device to serve as a high-efficiency photodetector. we report a field-effect device with a graphene/MoSe2 channel layer and high-k ion-gel gate dielectric. The device shows a high carrier mobility (~247 cm2/V ∙ s), a high on/off ratio (3.3 × 104), and ambipolar behavior that are controlled by an applied gate voltage. The strong gating effect of the device results in higher external quantum efficiency (EQE) (66.3%), photoresponsivity (285.0 mA/W), and gate-tuning ratio (1.50 μA/V) compared to pristine devices. Therefore, our graphene/MoSe2 barristor device can be a suitable candidate for use in ambipolar transistors and gate-tunable broad-area photodetectors.

We investigated THz phonon-polaritons in a lead halide perovskite film with metamaterials. Rabi splitting occurred when we tune the metamaterial resonance with the phonon resonance of the perovskite film, due to the strong coupling between the resonances. The polaritonic branches exhibited the dispersion curve with a clear anti-crossing behavior as a function of the metamaterial resonance. Rabi splitting versus crystal volume fraction were obtained with in-situ THz spectroscopy in which we found a unique power-law scaling, depending on the crystal growth dimensions.

We investigate the effect of the effective substrate refractive index on the sensitivity of terahertz (THz) metamaterials for dielectric sensing by substrate etching. We found the effective refractive index near the metamaterials can be actively controlled by etching, allowing optimization of the sensitivity. Our experimental findings are in good agreement with finite element method (FEM) simulation results.

We demonstrate subcycle electron pulse generation in a nanogap of graphene when irradiated by a femtosecond laser pulse in the near-infrared region (800 nm). A strong photoinduced emission was prod...

Electrical characteristics of ion gels prepared by loading different amounts of 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIM][TFSI]) in Poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) are investigated and compared with those of ion liquid, [EMIM][TFSI] for possible application as a gate stack for flexible electronic devices. Capacitance and impedance as a function of frequency are measured, which can be well accounted for by a simple circuit model identifying the local device components. The operation of a flexible field effect transistor based on graphene and the ion gel as a top gate stack is also demonstrated.

Nucleation and growth characteristics of HfO2 thin films on graphene are investigated using atomic layer deposition (ALD). Substantial delay (∼70 ALD cycles) in the nucleation of HfO2 films is observed during HfO2 ALD on graphene, which causes large leakage current in Au/HfO2/graphene capacitors at low HfO2 ALD cycles (

We demonstrated imaging of the depletion layer in a MoS2/graphene heterojunction fabricated by chemical vapor deposition and obtained their transport parameters such as diffusion length, lifetime, and mobility by using scanning photocurrent microscopy (SPCM). The device exhibited a n-type operation, which was determined by the MoS2 layer with a lower mobility. The SPCM revealed the presence of the depletion layer at the heterojunction, whereas graphene provided an excellent electrical contact for the MoS2 layer without resulting in a rectifying behavior, even if they were anchored within a very short range. The polarity of the photocurrent signal switched when we applied a drain–source bias voltage, from which we extracted the potential barrier at the junction. More importantly, a bias-dependent SPCM allowed us to simultaneously record the diffusion lengths of both majority and minority carriers for the respective MoS2 and graphene layers. By combining the diffusion lengths with the lifetimes measured by ...

We investigate the interaction of carbon nanotubes (CNTs) embedded in a polymer matrix [poly(methyl methacrylate) (PMMA)] with Ar plasma, which results in the formation of PMMA nanostructures, as CNTs act as an etching mask. Because of the large differences in the Ar ion sputtering yields between CNTs and PMMA, PMMA lines with the width comparable to that of CNTs and as high as 20 nm (for single-walled CNTs) or 80 nm (for multiwalled CNTs) can be obtained after repeated exposure of CNT/PMMA films to Ar plasma. We also follow the etching process by investigating changes in the IV characteristics and Raman spectra of CNTs after each exposure to Ar plasma, which shows progressive defect generations in CNTs while they maintain structural integrity long enough to act as the etching mask for PMMA underneath. We demonstrate that the PMMA nanostructure patterns can be transferred to a different polymer substrate using nanoimprinting.

We report an in situ characterization of transition-metal dichalcogenide (TMD) monolayers and twisted bilayers using a high-speed second-harmonic generation (SHG) imaging technique. High-frequency laser modulation and galvano scanning in the SHG imaging enabled a rapid identification of the crystallinity in the TMD, including the orientation and homogeneity with a speed of 1 frame/s. For a twisted bilayer MoS2, we studied the SHG peak intensity and angles as a function of the twist angle under a strong interlayer coupling. In addition, rapid SHG imaging can be used to visualize laser-induced ablation of monolayer and bilayer MoS2 in situ under illumination by a strong femtosecond laser. Importantly, we observed a characteristic threshold behavior, the ablation process occurred for a very short time duration once the preheating condition was reached. We investigated the laser thinning of the bilayer MoS2 with different twist angles. When the twist angle was 0°, the SHG decreased by approximately one-fourth of the initial intensity when one layer was removed. Conversely, when the twist angle was approximately 60° (the SHG intensity was suppressed), the SHG increased abruptly close to that of the nearby monolayer when one layer was removed. Precise layer-by-layer control was possible because of the unique threshold behavior of the laser-induced ablation.

We demonstrate all-optical switching of plasmonic resonance patterned on the carbon nanotube films supported on the silicon substrates. A considerable suppression of terahertz wave was observed in the transmission resonance, when the near-infrared femtosecond laser pulse is irradiated. A Fourier-transformed terahertz spectrum reveals that the resonance feature that was governed by the geometry of the slot antenna are almost completely removed with the laser irradiation having sufficiently high pulse energy reaching 18 μJ. A screening of terahertz field was analyzed in terms of the free carrier generation originating from the photoexcitation in semiconductor film.

We report a 47.1% efficiency improvement resulting from the combination of device-architecture modification and inclusion of poly(3-hexylthiophene-2,5-diyl) nanowires (P3HT NWs) in bulk heterojunction (BHJ) active layers (ALs). Modelling of ellipsometry spectra shows substantial changes in inhomogeneity and optical constants of BHJ ALs with P3HT-NW inclusion. Furthermore, finite-difference time-domain simulation results based on actual device structures with inhomogeneous AL models indicate that enhanced light harvesting is a main contributing factor to efficiency improvement. On the contrary, P3HT-NW inclusion has no significant effect on charge carrier collection, other than suppressing occurrence of cul-de-sac in hole-transport pathways and unfavourable indene-C60 bisadduct domains near top anodes.

Vibrational modes in the terahertz (THz) frequency range are good indicators of lead halide perovskite's crystallization phase. We performed real-time THz spectroscopy to monitor the crystallization kinetics in the perovskite films. First, THz absorptance was measured while the perovskite film was annealed at different temperatures. By analyzing the Avrami exponent, we observed an abrupt dimensionality switch (from 1D to 2D) with increasing temperature starting at approximately 90 °C. We also monitored the laser-induced crystallinity enhancement of the preannealed perovskite film. The THz absorptance increased initially, then subsequently decayed over a couple of hours, although the enhancement factor varies depending on the film crystallinity. In particular, the Avrami analysis implied that the light-induced crystallization was assisted by the 1D diffusion processes. The activation photon energy was measured at 2.3 eV, which indicated that enhanced crystallization originated from the photoinduced structural change of residual lead iodide at the grain boundary.

We demonstrate a significant enhancement in the sensitivity of split ring resonator terahertz metamaterial dielectric sensors by the introduction of etched trenches into their inductive-capacitive gap area, both through finite element simulations and in experiments performed using terahertz time-domain spectroscopy. The enhanced sensitivity is demonstrated by observation of an increased frequency shift in response to overlaid dielectric material of thicknesses up to 18 μm deposited on to the sensor surface. We show that sensitivity to the dielectric is enhanced by a factor of up to ~2.7 times by the incorporation of locally etched trenches with a depth of ~3.4 μm, for example, and discuss the effect of the etching on the electrical properties of the sensors. Our experimental findings are in good agreement with simulations of the sensors obtained using finite element methods.

We investigated the THz dielectric constant of a wide range of microbial species in conjunction with their cell wall compositions. In general, the dielectric constant of the molds was lower than that of bacteria, whereas the yeasts exhibited particularly high dielectric constants, which were higher than that of water. The measurement on the dielectric constants of peptidoglycan and polysaccharides such as chitin, $\alpha$-glucan, and $\beta$-glucans revealed that cell wall composition is the main cause of the observed differences in dielectric constants for different types of microorganisms.

In this study, we developed a rapid three-dimensional (3D) time-of-flight imaging tool for inspection of packaged semiconductor chips, using terahertz (THz) time-domain spectroscopy techniques. A high-speed THz system based on the optical sampling by cavity tuning technique is incorporated with a 2-axis galvano scanner to deliver a scanning speed of more than 100 Hz/pixel with a signal-to-noise ratio larger than 20 dB. Through the use of the Hilbert transformation, we reconstruct the 3D structure of the packaged chip in a nondestructive manner. Additionally, the use of frequency-selective imaging allows us to manipulate image resolution, the higher resolution was obtained when monitored using the higher frequency component. Further, using phase information, we were able to detect and identify defects in the packaged chip, such as the delamination area and epoxy-rich regions.

Optically controlled spectral-band selective terahertz (THz) modulators based on metal-organic hybrid metamaterials were investigated. An artificially structured material, which consists of two single split-ring resonators put together on the split gap side, was patterned on a silicon substrate to generate frequency-selective properties. An active layer of an organic thin film (fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester, also called PCBM) was deposited on the metamaterial-silicon structure for modulating the transmission of incident THz radiation. The metal-organic hybrid metamaterials enabled active control of spectral bands present in the transmission spectra of THz waves. In addition, the changes in the photo-excited carrier density due to the transfer of charges between the layers were quantitatively analyzed by simulation results.

We studied experimentally and theoretically the vertical range of the confined electric field in the gap area of metamaterials, which was analyzed for various gap widths using terahertz time-domain spectroscopy. We measured the resonant frequency as a function of the thickness of poly(methyl methacrylate) in the range 0 to 3.2 µm to quantify the effective detection volumes. We found that the effective vertical range of the metamaterial is determined by the size of the gap width. The vertical range was found to decrease as the gap width of the metamaterial decreases, whereas the sensitivity is enhanced as the gap width decreases due to the highly concentrated electric field. Our experimental findings are in good agreement with the finite-difference time-domain simulation results. Finally, a numerical expression was obtained for the vertical range as a function of the gap width. This expression is expected to be very useful for optimizing the sensing efficiency.

Graphene has emerged as a promising 2-dimensional (2D) material composed of a monolayer of carbon atoms, which is expected to be utilized for nano- and optoelectronic device applications. In order to fabricate high speed graphene transistors with low power consumption, the growth of insulating thin films with high dielectric constant (high-k) on graphene is essential. Atomic layer deposition (ALD) is one of the best deposition techniques to grow functional thin films, however, it is extremely challenging to grow high-k thin films on graphene by ALD because of the lack of surface functional groups (such as hydroxyl groups) on graphene. Here, we demonstrate that the graphene surface is fully covered by Al2O3 thin films (10–30 nm), with significantly reduced leakage current (decreased by a factor of ∼107), through simple surface treatment of the graphene in the ALD chamber prior to the deposition of the Al2O3 layer by ALD to provide surface nucleation sites on the graphene, without breaking vacuum and changi...

We directly observed charge separation and a space-charge region in an organic single-crystal p-n heterojunction nanowire, by means of scanning photocurrent microscopy. The axial p-n heterojunction nanowire had a well-defined planar junction, consisted of P3HT (p-type) and C60 (n-type) single crystals and was fabricated by means of the recently developed inkjet-assisted nanotransfer printing technique. The depletion region formed at the p-n junction was directly observed by exploring the spatial distribution of photogenerated carriers along the heterojunction nanowire under various applied bias voltages. Our study provides a facile approach toward the precise characterization of charge transport in organic heterojunction systems as well as the design of efficient nanoscale organic optoelectronic devices.

In this paper, we demonstrate that terahertz (THz) metamaterials are powerful tools for determination of dielectric constants of polymer films and polar liquids. As we deposit a dielectric film on a metamaterial, the resonant frequency shifts, but saturates at a specific thickness due to the limited sensing volume of the metamaterial. From the saturated value, we can extract the dielectric constants of various polymers that are transparent to the THz frequency range. In addition, we fabricated a microfluidic channel that contains the metamaterials to address the real dielectric constants for a polar liquid solution. This was possible due to an extremely confined electric field near the gap area of the metamaterials, enabling us to employ very thin liquid layers. We found that the resonance shifts do not depend critically on the imaginary dielectric constants, proving that our approach can be universal in terms of various materials, including absorptive materials. As an example, the dielectric constants of sodium chloride and potassium chloride solutions have been determined with various concentrations. Our experimental findings were successfully confirmed by finite-difference time-domain simulations.

We used a negative-tone e-beam resist (N-ER) to perform direct laser writing lithography based on a single-photon absorption process with a 405-nm laser source. The linewidth of the N-ER reached 150 nm, which is over three times thinner than that of a conventional photoresist. To optimize the process, the linewidth, lithographic contrast, and aspect ratio of the N-ER were investigated with respect to the dose and baking temperature. We were able to achieve a lithographic contrast of 4.8 and a maximum aspect ratio of 1.43, thereby confirming the superior resolution of the N-ER.

We developed hybrid slot antenna structures for microbial sensing in the THz frequency range, where silver nanowires (AgNWs) were employed to increase the sensitivity. In order to fabricate the hybrid devices, we partially etched the AgNW in the slot antenna region, where we can expect the field enhancement effect at the AgNW tip. We measured the resonant-frequency shift observed upon the deposition of a polymer layer, and observed that the sensitivity increased upon the introduction of AgNWs, with an enhancement factor of more than four times (approximately six times in terms of figure-of-merit). The sensitivity increased with the AgNW density until saturation. In addition, we tested devices with PRD1 viruses, and obtained an enhancement factor of 3.4 for a slot antenna width of 3 μm. Furthermore, we performed finite-difference time-domain simulations, which confirmed the experimental results. The sensitivity enhancement factor decreased with the decrease of the slot width, consistent with the experimental findings. Two-dimensional mapping of the electric field confirmed the strong field localization and enhancement at the AgNW tips.

We demonstrated imaging of the depletion layer in a MoS

We demonstrate the development of an effective technique to remove the poly methyl methacrylate (PMMA) layer used for transferring graphene synthesized by a chemical vapor deposition (CVD). This was achieved utilizing electron-beam bombardment and following developing processes, prior to the use of conventional organic solvents. Field-effect transistors were fabricated on the transferred graphene in order to explore their Dirac points and carrier motilities in the ambient condition - the results were then compared with those from the conventional wet chemical treatment. It was found that the Dirac points were located close to the zero gate bias when compared to those from the acetone and the acetic acid treatments. Most significantly, the field-effect mobility reached as high as 6770 cm2/Vs and 7350 cm2/Vs on average for holes and electrons, respectively, which is more than seven times improvement in comparison to conventional acetone treatments for CVD-grown graphene devices.

We demonstrate substrate electron-beam-induced current (s-EBIC) measurements of individual single-walled carbon nanotubes (SWNTs) by measuring the current collected by the substrate electrode, which penetrates through the insulating oxide layer. We found that s-EBIC provided better image contrast than ordinary secondary electron imaging methods for locating SWNTs that are in contact with metal electrodes. The s-EBIC has been measured for different acceleration voltages and probe currents. We found that s-EBIC did not depend critically on the acceleration voltage when the e-beam irradiated an insulating layer as compared to the case when it irradiated metal electrodes. Importantly, s-EBIC signals were increased by more than 10%, when the SWNT part was irradiated, and this makes s-EBIC imaging a very useful tool for locating individual SWNTs efficiently.

We used electrostatic force microscopy (EFM) to investigate local conducting states of atomically thin individual graphene oxide (GO) sheets and monitor the spatial evolution of their conducting properties during the reduction process. Because of the thinness of the GO sheets and finite carrier density, the electric field is partially screened in the reduced GO, which is manifested in the EFM phase signals. We found inhomogeneous oxidation states in as-prepared GO sheets and followed the evolution of reduction process in the individual GO sheets during both thermal and chemical reduction. We also compared the EFM measurement results with simultaneous IV characteristics to assess correlations between two measurements.

With poly(3-hexylthiophene) (P3HT) nanowire (NW) inclusion in active layers (ALs), organic solar cells (OSCs) based on P3HT donor and indene-C60 bisadduct (ICBA) acceptor showed power conversion efficiency (PCE) improvements for both bulk heterojunction (BHJ)- and bilayer (BL)-structure AL devices. The PCE increase was approximately 14 % for both types of P3HT:ICBA OSCs. However, improvements in short-circuit current density (Jsc ) were about 4.4 and 6.4 % for BHJ- and BL-type AL devices, respectively. A systematic study showed that the addition of P3HT NWs did not result in enhanced internal quantum efficiencies for either type of device. However, the difference in light-harvesting efficiency was important in accounting for Jsc variations. Interestingly, there was no correlation between Jsc and PCE variations, whereas the open-circuit voltage (Voc ) and fill factor (FF) showed correlations with the PCE. The variation in FF is discussed in terms of Voc and equivalent-circuit parameters based on a nonideal diode model.

We demonstrate dielectric substrate effects on the resonance shift of terahertz metamaterials with various metal thicknesses by using finite-difference time-domain simulations. We found a small red shift in the metamaterial resonance with increasing metal thickness for the free-standing case. Conversely, when the metamaterial pattern was supported by a substrate with a high dielectric constant, the resonant frequency exhibited a large blue shift because the relative contribution of the substrate’s refractive index to the resonant frequency decreased drastically as we increased the metal thickness. We determined the substrate’s refractive index, 1.26, at which the metamaterial resonance was independent of the metal thickness. We extracted the effective refractive index as a function of the substrate’s refractive index explicitly, which was noticeably different for different film thicknesses.

Graphene films with different nucleation densities were successfully grown on Cu foils using an atmospheric pressure chemical vapor deposition (APCVD) method. We investigated the effect of heating ramp rate on graphene growth, which is critical to the control of both the domain density and the defects density in further synthesized graphene film. Density of graphene domains was reduced with a decrease in ramp rate; heating Cu foil at a lower rate produced flat and smooth surface with larger Cu grains. These surface roughness and grain size-heating rate association were confirmed by atomic force microscope and electron backscatter diffraction analysis. By comparing micro Raman mappings of the graphene films grown with different ramp rates, we found that the number of layers, defect density, and uniformity of as-grown graphene films were strongly dependent on heating ramp rate. With these observations, we demonstrate the growth mechanism of graphene films as a function of the heating ramp rates.

Most semiconductors have surface dynamics radically different from its bulk counterpart due to surface defect, doping level, and symmetry breaking. Because of the technical challenge of direct observation of the surface carrier dynamics, however, experimental studies have been allowed in severely shrunk structures including nanowires, thin films, or quantum wells where the surface-to-volume ratio is very high. Here, we develop a new type of terahertz (THz) nanoprobing system to investigate the surface dynamics of bulk semiconductors, using metallic nanogap accompanying strong THz field confinement. We observed that carrier lifetimes of InP and GaAs dramatically decrease close to the limit of THz time resolution (∼1 ps) as the gap size decreases down to nanoscale and that they return to their original values once the nanogap patterns are removed. Our THz nanoprobing system will open up pathways toward direct and nondestructive measurements of surface dynamics of bulk semiconductors.

We demonstrate THz metamaterials as efficient label-free detectors for microorganisms such as fungi, bacteria, and viruses. A shift in the resonant frequency is observed following the deposition of various living and viable microorganisms, which arises due to the change in the effective dielectric constant in a capacitive gap of the metamaterials. The metamaterial sensing is a universal method, while a selective detection is also possible by functionalizing the substrates with antibodies specific to the target substances. Dielectric constants of the various microorganisms have been recorded using the metamaterial sensors, which will help to achieve selective and sensitive identification of the pathogens without the help of receptors.

Most semiconductors have surface dynamics radically different from its bulk counterpart due to the surface state. However, direct observation of the surface carrier dynamics has been limited to nano structures where the surface-to-volume ratio is very high. Here, we develop a new type of terahertz (THz) nanoscopy to investigate surface dynamics of bulk semiconductors, using metallic nano gap accompanying strong THz field confinement. We observed that carrier lifetimes of InP and GaAs dramatically as the gap size decreases, and that they return to their bulk values once the nano patterns are removed.