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CMOS RF switches support watt-level RF output power while enabling signal processing with high speed. Typically, RF FET switches offer a tradeoff between a power handling and modulation bandwidth. This paper investigates the cause of compression in a FET switch, and the analysis suggests the optimization of the gate driving impedance for a stacked-FET switch. A design methodology is presented to realize watt-level power handling with high fractional bandwidth (FBW). The measurements demonstrate a BPSK modulator that can handle up to 10 W with wide FBW. The high-power, low-insertion loss, and high-modulation bandwidth demonstrate record performance. [ABSTRACT FROM AUTHOR]

V2Ic is a ripple-based control with an excellent performance for load transients and reference voltage tracking because it exhibits a feedforward of the load current and the error of the output voltage. However, if V2Ic is modulated with constant frequency, constant on-time or constant off-time, its dynamic response is hindered by delays in the response. This paper proposes a technique that synchronizes the clock of the converter to initialize the duty cycle when a worst-case load transient occurs using the current through the output capacitor to detect load transients. It is exemplified on a V2Ic control but it is applicable to most of controllers as it only acts on the modulator. [ABSTRACT FROM AUTHOR]

This paper presents operational data and parameters of the newest generation of polyphase resonant high voltage converter modulator (HVCM) as developed and delivered to the KAERI 100 MeV "PEFP" accelerator. The KAERI design realizes improvements from the SNS and SLAC designs. The present KAERI system operates two parallel THALES TH2089F 350 MHz klystrons with total power draw of 50 amperes at 105 kV. An additional 3 klystron system operating at 105 kV and 75 A is also being considered for the high energy sections of this accelerator. In these systems, to improve the IGBT switching performance, the HVCMs will be fitted with artificial zero-voltage-switching (ZVS) networks at turn-off. This new method of artificial ZVS should result in a 6 fold reduction of IGBT switching losses. This will improve the HCVM conversion efficiency to better than 95% at full average power, which is 500 kW for the 2 klystron system and 750 kW for the 3 klystron system. The artificial ZVS is accomplished by placing a soft switching capacitor network across the resonant boost transformer primary winding. This low loss snubber circuit reduces the dv/dt across the IGBTs at turn-off. As the transformer input busswork is extremely low inductance (<10 nH), the single network acts like it is across each IGBT collector-emitter terminal of the 4 transistor H-bridge switching network. We will review these topological improvements and the overall system as delivered to the KAERI accelerator with details of the installed operational results. [ABSTRACT FROM AUTHOR]