Back to Search
Start Over
RF Watt-Level Low-Insertion-Loss High-Bandwidth SOI CMOS Switches.
- Source :
-
IEEE Transactions on Microwave Theory & Techniques . Dec2018, Vol. 66 Issue 12, p5724-5736. 13p. - Publication Year :
- 2018
-
Abstract
- CMOS RF switches support watt-level RF output power while enabling signal processing with high speed. Typically, RF FET switches offer a tradeoff between a power handling and modulation bandwidth. This paper investigates the cause of compression in a FET switch, and the analysis suggests the optimization of the gate driving impedance for a stacked-FET switch. A design methodology is presented to realize watt-level power handling with high fractional bandwidth (FBW). The measurements demonstrate a BPSK modulator that can handle up to 10 W with wide FBW. The high-power, low-insertion loss, and high-modulation bandwidth demonstrate record performance. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189480
- Volume :
- 66
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Microwave Theory & Techniques
- Publication Type :
- Academic Journal
- Accession number :
- 133624649
- Full Text :
- https://doi.org/10.1109/TMTT.2018.2876825