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Focuses on a study which fabricated and examined two indium gallium phosphide/gallium arsenide resonant tunneling bipolar transistors with different superlattice structures in the emitters. Considerations in transistor characteristics; Analysis and comparison of multiple negative differential resistance characteristics; Conclusion.

Reports on the applications of a continuous-conduction-band structure for ultralow current operations transistors. Compositional dependence on the conduction band discontinuity; Breakdown characteristics and lower output conductance.

Focuses on the fabrication and characteristics of high-linearity Ga[sub 0.51]In[sub 0.49]P/In[sub 0.15]Ga[sub 0.85]As pseudomorphic high electron-mobility transistors in both direct-current and alternating-current performance. Transconductance, gate-to-drain breakdown and current density of the device at room temperature.