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We have performed angle-dependent reflectance measurements of in situ magnetron sputtered films of [B.sub.4]C, C, Mo, Si, and W. The Fresnel relations were used to determine the complex index of refraction from the reflectance data in the region of approximately 35-150 eV. In the cases of Si, C, and [B.sub.4]C we found excellent agreement with published data. However, for Mo and W we found that the optical properties from 35 to 60 eV differed significantly from those in the literature.

Discusses the production of the composition-modulated multilayer spin glasses of the form CuMn-Cu and CuMn-SiO[sub2] by means of sputtering. Description of the sample preparation; Summary of the composition of all layered samples with their corresponding spin glass temperatures.

Demonstrates a low-power 1-Megabit magnetoresistive random access memory based on a one-transistor and one-magnetic tunnel junction bit cell. Integration of the magnetic tunnel junction elements with complementary metal oxide semiconductors; Use of copper interconnect technology; Reduction of the power needed for programming.