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Inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub‐0.60 eV bandgaps grown on InP and GaAs are presented. Threading dislocation densities are 1.3 ± 0.6 × 106 and 8.9 ± 1.7 × 106 cm−2 on InP and GaAs, respectively. The devices generate open‐circuit voltages of 0.386 and 0.383 V, respectively, under irradiance producing a short‐circuit current density of ≈10 A cm−2, yielding bandgap‐voltage offsets of 0.20 and 0.21 V. Power and broadband reflectance measurements are used to estimate thermophotovoltaic (TPV) efficiency. The InP‐based cell is estimated to yield 1.09 W cm−2 at 1100 °C versus 0.92 W cm−2 for the GaAs‐based cell, with efficiencies of 16.8 versus 9.2%. The efficiencies of both devices are limited by sub‐bandgap absorption, with power weighted sub‐bandgap reflectances of 81% and 58%, respectively, the majority of which is assumed to occur in the graded buffers. The 1100 °C TPV efficiencies are estimated to increase to 24.0% and 20.7% in structures with the graded buffer removed, if previously demonstrated reflectance is achieved. These devices also have application to laser power conversion in the 2.0–2.3 µm atmospheric window. Peak laser power converter efficiencies of 36.8% and 32.5% are estimated under 2.0 µm irradiances of 1.86 and 2.81 W cm−2, respectively. [ABSTRACT FROM AUTHOR]

Emitted photons stemming from the radiative recombination of electron–hole pairs carry chemical potential in radiative energy converters. This luminescent effect can substantially alter the local net photogeneration in near-field thermophotovoltaic cells. Several assumptions involving the luminescent effect are commonly made in modeling photovoltaic devices; in particular, the photon chemical potential is assumed to be zero or a constant prescribed by the bias voltage. The significance of photon chemical potential depends upon the emitter temperature, the semiconductor properties, and the injection level. Hence, these assumptions are questionable in near-field thermophotovoltaic devices with nanoscale separation distances between the emitter and the cell. In the present work, an iterative solver that combines fluctuational electrodynamics with the drift-diffusion model is developed to tackle the coupled photon and charge transport problem, enabling the determination of the spatial profile of photon chemical potential beyond the detailed balance approach. The difference between the results obtained by allowing the photon chemical potential to vary spatially and by assuming a constant value demonstrates the limitations of the conventional approaches. This study is critically important for performance evaluation of near-field thermophotovoltaic systems with nanoscale vacuum gaps. [ABSTRACT FROM AUTHOR]

The output power of thermophotovoltaic (TPV) cells may be greatly increased when the gap between the emitter and cell is reduced to submicron distances (near-field regime), at which photon tunneling due to evanescent waves becomes important. Accurate modeling of TPV cells in these conditions is crucial for the design and optimization of near-field TPV systems. The conventional or standard modeling method uses the summation of the dark current and the short-circuit current, while the direct method applies the photon chemical potential. It has been shown that the two methods are linked through a modification of the direct method using Wien's approximation. By contrasting different modeling approaches, we quantitatively analyze the effects of evanescent waves on the TPV cell performance parameters, especially the dark current, for different emitter and cell materials in the near-field regime. Our results show that the saturation current by radiative recombination is strongly affected by evanescent waves and the bandgap energy. The current-voltage characteristics calculated by different modeling methods are displayed to demonstrate that a constant saturation current typically used in the standard method could cause substantial error in the near-field regime. For a TPV system with an emitter operating at relatively low temperatures, we show that it is necessary to include the photon chemical potential in the computation of the net radiative heat transfer between the emitter and receiver. [ABSTRACT FROM AUTHOR]

Photons typically do not contribute to thermal transport within a solid due to their low energy density and tendency to be absorbed quickly. We propose a practical material system—infrared plasmonic resonators embedded in a semiconductor nanowire—that leverages near-field electromagnetic coupling to achieve photonic thermal transport comparable to the electronic and phononic contributions. We analytically show photonic thermal conductivities up to about 1 W m−1 K−1 for 10 nm diameter Si and InAs nanowires containing repeated resonators at 500 K. The nanowire system outperforms plasmonic particles in isotropic environments and presents a pathway for photonic thermal transport to exceed that of phonons and electrons. [ABSTRACT FROM AUTHOR]

An ideal solar thermal absorber has a sharp transition between high and low absorptance at the wavelength where the blackbody emissive power begins to exceed the solar irradiance. However, most real selective absorbers have a fairly broad transition, leading to both solar absorption and thermal emission losses. Here, we model, fabricate, and characterize a highly selective semiconductor-dielectric-metal (Ga 0.46 In 0.54 As – MgF 2 – Ag) solar absorber with an extremely sharp transition from high to low absorptance. The thin semiconductor serves as a selective filter, absorbing photons with wavelengths shorter than the bandgap and transmitting those with longer wavelengths. The highly reflective dielectric-metal rear mirror allows the structure to have very low emittance for longer wavelengths. These characteristics provide the absorber with a measured solar absorptance >91% below the bandgap wavelength and infrared emittance <5% at 100 °C above the bandgap wavelength. This transition wavelength can be tuned by modifying the semiconductor composition, and modeling indicates that the absorber's optical properties should be stable at high temperatures, making the structure a good candidate for unconcentrated to highly concentrated solar thermal energy conversion. • Fabricated absorbers feature high solar absorptance and low thermal emittance. • A tunable, sharp transition wavelength is achieved with a GaInAs absorber layer. • Modeling indicates that optical properties should be stable at high temperatures. • Appropriate for a variety of applications from high to low optical concentration. [ABSTRACT FROM AUTHOR]

We demonstrate GaAs thermophotovoltaic (TPV) devices with a patterned dielectric back contact (PDBC) architecture, featuring a dielectric spacer between the semiconductor and back metal contact over most of the back surface for high reflectance, and metal point contacts over a smaller area for electrical conduction. In the TPV application, high sub-bandgap reflectance is needed to reflect unused sub-bandgap photons to the thermal emitter to minimize energy losses in this portion of the thermal spectrum. We explore different PDBC fabrication processes with SU-8 and SiO 2 dielectric spacer layers to maximize sub-bandgap reflectance while minimizing series resistance to increase TPV conversion efficiency. We successfully demonstrate GaAs SU-8 PDBC TPV devices with 2200 °C blackbody-weighted sub-bandgap reflectance of 94.9% and 96.5% with and without a front metal grid, respectively. This is 0.7% and 2.3% (absolute) higher than the mean sub-bandgap reflectance of 94.2% for GaAs baseline TPV devices with 100% Au back contact with front metal grid. Lower sub-bandgap reflectance in TPV devices with front grids indicates the front grid induces light scattering leading to additional parasitic absorption in the TPV device. We also show that for higher contact coverage fractions, the PDBC reflectance cannot in general be treated by a linear interpolation using simple 1D transfer matrix method modeling and should be treated instead as a diffraction grating by solving Maxwell's equations in 3D. • We explore different patterned dielectric back contact (PDBC) fabrication processes with SU-8 and SiO 2 for TPV cells. • Sub-bandgap reflectance over 96% demonstrated using dielectric-metal point contact rear mirror structure, a gain of >1%. • PDBC structures should be modeled as a 3-dimensional diffraction grating by solving Maxwell's equations. • Front grids increase diffuse reflectance thus increasing absorption in the device. [ABSTRACT FROM AUTHOR]

The patterned dielectric back contact (PDBC) structure can be used to form a point-contact architecture that features a dielectric spacer with spatially distributed, reduced-area metal point contacts between the semiconductor back not recognized contact layer and the metal back contact. In this structure, the dielectric-metal region provides higher reflectance and is electrically insulating. Reduced-area metal point contacts provide electrical conduction for the back contact but typically have lower reflectance. The fabrication methods discussed in this article were developed for thermophotovoltaic cells, but they apply to any III-V optoelectronic device requiring the use of a conductive and highly reflective back contact. Patterned dielectric back contacts may be used for enhanced sub-bandgap reflectance, for enhanced photon recycling near the bandgap energy, or both depending on the optoelectronic application. The following fabrication methods are discussed in the article•PDBC fabrication procedures for spin-on dielectrics and commonly evaporated dielectrics to form the spacer layer.•Methods to selectively etch a parasitically absorbing back contact layer using metal point contacts as an etch mask.•Methods incorporating a dielectric etch through different process techniques such as reactive ion and wet etching., (© 2022 The Author(s).)