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As IoT is getting a thriving development, IC technology has stepped into the nano-meter era. For advanced 28 nm process and beyond, the device pitch becomes smaller. As a result, the coupling effect increases rapidly, degrading the performance of the critical design block, such as sense amplifiers in SRAM design. In addition, the process variation needs to be carefully addressed. In this paper we introduce an improvement over traditional latch type sense amplifier. The modification employs additional coupling effect in order to cancel out the device coupling observed in original design. The improved design shows a significant yield improvement based on the Monte-Carlo simulations under various operating conditions. The layout pattern modification is also presented, demonstrating an alternative sense amplifier implementation to address the coupling effect at negligible power and area overhead. [ABSTRACT FROM AUTHOR]

Based on the deep fusion of intelligent meridian sensing technology and Huoluo Xiaoling Pill (HXP) in the treatment of knee osteoarthritis (KOA), firstly, the effective components and targets of Salvia miltiorrhiza, Angelica sinensis, frankincense, and myrrh were obtained by using TCMSP, SwissADME, and Swisstarget databases. Similarly, relevant targets of KOA were collected through GeneCards, OMIM, TTD, PharmGKB, and DrugBank databases. Next, the potential targets of ZXP in the treatment of KOA were obtained by intersection of drug and disease targets. Finally, Cytoscape 3.7.1 software was used to construct a "disease-drug-component-target" network, and Gene Ontology (GO) function and Kyoto Encyclopedia of Genes and Gnomes (KEGG) signaling pathway enrichment analysis were performed on the core targets through Metascape website. A total of 99 active components and 203 corresponding potential therapeutic targets were obtained from the components of HXP. And KOA has 2543 potential therapeutic targets, of which 120 cross targets correspond to 120 active compounds in HXP. Then, topology analysis displayed that the six targets form the core PPI network. In addition, GO and KEGG enrichment analyses showed that these core targets were mainly enriched in inflammatory response, apoptosis, oxidation reaction, and other related pathways. [ABSTRACT FROM AUTHOR]

Built-in self-test (BIST) mechanism has been a very important approach for testing embedded memory's function and performance. In this paper, a high-speed BIST design for embedded static random access memory (SRAM) and one-port register file (RF) IPs testing was presented. With the purpose of achieving high-speed requirement, the pipe-line strategy is adopted in BIST circuit. Four SRAM instances and four one-port RF instances with the BIST circuit are integrated in a test chip. And the test chip has been fabricated in 28 nm low-leakage logical process. The final silicon data indicated that the proposed implementation is efficient and reliable for memory testing. Furthermore, the test result also show that the yield of memory instances with BIST circuits in the test chip reached up to nearly 100%. [ABSTRACT FROM AUTHOR]

With the development of modern semiconductor fabrication technology, the channel length of the CMOS device and the device pitch continually shrink accompanied by more and more severe process variation and signal coupling effect, respectively. In this paper, we explain how the coupling effect interferes with the action of the sense amplifier (SA); then we introduce a coupling suppressed SA. In our design, we adjust the time control. The coupled signals are classified and suppressed by different turn on currents. The new architecture can achieve obvious improvement under differential input in our Monte Carlo simulation. The area and speed cost can be omitted. Through our work, we recommend our design of SA and draw attention to the coupling effect for other circuits. [ABSTRACT FROM PUBLISHER]

Ab initio calculations on the interaction of the oxygen vacancy and its impact on the transmission coefficients in oxygen-deficient TiO2 are reported. It is found that the separated oxygen vacancies or divacancies produce partial shallow defect energy levels below the conduction-band edge as weak interactions between these vacancies. On the contrary, for the ordering oxygen divacancies, we observe that the defect energy levels fill in the bandgap. A much higher extent is found for the ordering oxygen divacancies in both columns of the supercell due to the appearance of many reduced Ti3+ ions. As a result, these oxygen divacancies expand the transmission range and improve the transmission coefficients. The microscopic origin of the oxygen-vacancy interaction is helpful to clarify the mechanism of the resistive switching phenomenon. [ABSTRACT FROM AUTHOR]

Ab initio calculations on the anisotropic relaxation of a CuO/TiO2 surface under electric fields and the visible light absorption of these relaxed surfaces are reported. We compare the relaxation of the CuO/TiO2 surface under the electric fields in the direction of [001] or [010]. Fewer Cu–O bonds with highly coordinated Cu-ions are found in the CuO/TiO2 relaxed surface under the electric field in the [010] direction. The Cu–O bonds in the interface of the CuO/TiO2 surface led to an improved visible light absorption in the polarization direction of [001]. The CuO/TiO2 relaxed surface under the electric field in the [010] direction exhibits a more effective absorption of visible light. However, the electric field in the [001] direction induces more relaxation on the CuO/TiO2 surface, breaking the Cu–O bonds. This leads to the partial reduction of CuO to Cu2O on the CuO/TiO2 relaxed surface under the electric field in the [001] direction and inefficient absorption of visible light is observed for this surface. [ABSTRACT FROM AUTHOR]

The ab initio calculations about the properties of the interstitials doping in the rutile TiO2 and their impact on the transport coefficients are reported. As the doping of the Zr or Ti interstitials in the TiO2, the lattice Ti4+ ions acquire the excess electrons so reduced to the Ti3+ or Ti2+ ions. However, the Cu interstitials could not lose enough electrons to reduce the lattice Ti4+ ions. Furthermore, the Ti or Cu interstitials in the ZrO2 also are unable to promote the lattice Zr4+ ions to form the lattice Zr3+ or Zr2+ ions. The high transport coefficients are observed in the defected TiO2 with the Ti or Zr interstitials as the high concentration of the Ti3+ or Ti2+ ions. So, the Zr interstitials are the favorable choice for the extra-doping to improve the transport properties in the TiO2-based resistive random access memory. [ABSTRACT FROM AUTHOR]

A heterogeneous, sensor-based Web of Things system model with ubiquitous attributes and a human-attention inspired resource allocation scheme facilitates dynamic resource interaction. [ABSTRACT FROM AUTHOR]

Power consumption is becoming a pressing issue in SRAM cell design. Recent research shows that SRAM power contributes a key part of the whole chip power consumption. In this paper, we present a new 6T-SRAM cell structure for nano-scale technology with stability of low power application by using separate write and read operation. Simulation results with standard 65nm CMOS technology show the correct operation, the speed is closed to the traditional 6T cell, power consumption reduces about 22.45 % during write 0. In particular, this structure maintains its data with leakage current and positive feedback in idle mode which can greatly improve the power consumption of the nano-scale SRAM. [ABSTRACT FROM AUTHOR]

ICs for portable applications need high integration and low supply voltage. Because of high integration, more noise propagates onto the supplies. So a low voltage, high PSR LDO is needed. In this paper, such a LDO is proposed. The simulation results show that the PSR is - 78dB at 1 kHz and the minimum supply vohage is 0.9V. [ABSTRACT FROM AUTHOR]

First principles studies about the influence of electric field and anisotropic oxygen vacancy on the dielectric properties of rutile titanium dioxide (TiO2) are investigated. These results demonstrate that dielectric properties of perfect TiO2 presents dependent on the low electric field that less than 5.2 MV/cm. As a comparison, the dielectric properties of defected TiO2 in (1 1 0) plane and [1 1 0] direction show more sensitive to high electric field. Further more, considering the different positions of oxygen vacancy, the oxygen vacancy locates in (1 1 0) plane of defected TiO2 appears more active to high electric field than it does in [1 1 0] direction. The effect of electric field and oxygen vacancy induce the distorted supercell structure and broken bond between the nearer oxygen atoms and titanium atoms. Moreover, the oxygen vacancy locates in (1 1 0) plane of defected TiO2 can create more potential broken bond. These results account for the difference of dielectric properties in perfect TiO2 and defected TiO2. [ABSTRACT FROM AUTHOR]

Internet of things (IoT) is fascinating; its future architecture is still under construction. Based on the analysis on the basic and essential characters of IoT, this paper deals with Future IoT architecture in two aspects: Unit IoT and Ubiquitous IoT. Focusing on a special application, the architecture of the Unit IoT is built from man like neural network (MLN) model and its modified model. Ubiquitous IoT refers to the global IoT or the integration of multiple Unit IoTs with "ubiquitous" characters, and its architecture employs social organization framework (SOF) model. The models for Future IoT are not only helpful to interpret the relationship between IoT and reality world, but also beneficial to the implementation of IoT in its current development milieu. [ABSTRACT FROM PUBLISHER]

Ab initio calculations on the anisotropic relaxation of a CuO/TiO2 surface under electric fields and the visible light absorption of these relaxed surfaces are reported. We compare the relaxation of the CuO/TiO2 surface under the electric fields in the direction of [001] or [010]. Fewer Cu-O bonds with highly coordinated Cu-ions are found in the CuO/TiO2 relaxed surface under the electric field in the [010] direction. The Cu-O bonds in the interface of the CuO/TiO2 surface led to an improved visible light absorption in the polarization direction of [001]. The CuO/TiO2 relaxed surface under the electric field in the [010] direction exhibits a more effective absorption of visible light. However, the electric field in the [001] direction induces more relaxation on the CuO/TiO2 surface, breaking the Cu-O bonds. This leads to the partial reduction of CuO to Cu2O on the CuO/TiO2 relaxed surface under the electric field in the [001] direction and inefficient absorption of visible light is observed for this surface.