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Abstract: We report non-saturating linear magnetoresistance (LMR) in silver-poor composite thin films of Ag10Ge15Te75 (AGT). The LMR increases with decreasing temperature and reaches a value of 110% at 200K under a magnetic field of 70kOe. The observed magnetoresistance is proportional to carrier mobility due to identical temperature dependencies. The microstructures of AGT films annealed at different temperature are investigated by TEM observations. The observed LMR effect is resulting from the inhomogeneous distribution of conductivity caused by highly conductive Ag2Te and GeTe4 precipitates, which generate a current distortion in the surrounding amorphous silver-poor Ag–Ge–Te matrix. [Copyright &y& Elsevier]

Abstract: Charge trapping memory capacitors using (ZrO2)0.8(SiO2)0.2 film as charge trapping layer and amorphous Al2O3 as the tunneling layer and blocking layer were fabricated for nonvolatile semiconductor memory application. The ZrO2 nanocrystallites with a size of 3–5nm precipitated from amorphous (ZrO2)0.8(SiO2)0.2 during rapid thermal annealing at 800°C can serve as the storage nodes, with which a large hysteresis memory window of 7.5V at a sweeping gate voltage of 8V has been achieved. At 150°C bake temperature, the memory capacitor exhibited an excellent endurance up to 105 write/erase cycles, after which a small charge loss of about 12% was achieved. [Copyright &y& Elsevier]

Well-developed bipolar resistive switching behaviors have been revealed in Pt/GaOx/ITO stacks without an electroforming process. By substituting platinum with titanium as the top electrode, switching polarity changed from 'counter-Figure-8' to 'Figure-8.' The modulation of Schottky barrier at the Pt/GaOx interface induced by migration of oxygen vacancies was proposed to explain the switching in Pt/GaOx/ITO stacks, while the switching in Ti/GaOx/ITO stacks was ascribed to the redox reaction at the Ti/GaOx interface. Our experimental result further confirms the migration of oxygen vacancies in the vicinity of the electrode area plays an important role in the resistive switching process. [ABSTRACT FROM AUTHOR]

A charge trapping memory device using Ti0.2Al0.8Ox film as charge trapping layer and amorphous Al2O3 as the tunneling and blocking layers was fabricated for nonvolatile memory application. TiAl2O5 nanocrystals are precipitated from the phase separation of Ti0.2Al0.8Ox film annealed at 900 °C. A memory window of 2.3 V and a stored electron density of 1×1013/cm2 were obtained. Good retention characteristics of the memory device at 80 °C were observed due to the deep charge trapping level as identified by the valence band offsets and electron energy loss spectrum measurements. [ABSTRACT FROM AUTHOR]

Abstract: The charge trap flash memory cells incorporating high-k ZrO2/Al2O3 nanolaminate as charge trapping layers and amorphous Al2O3 as tunneling and blocking layers were prepared, investigated and optimized. The interfaces between ZrO2/Al2O3 nanolaminate play an important role in the charge storage characteristics. With increasing number of the interfaces in the charge trapping layer, the memory window increases first and then decreases due to electrostatic repulsion between the trapped electrons. A satisfactory retention performance was observed in the optimized cell structure, which was attributed to the deep quantum wells between the ZrO2/Al2O3 nanolaminate. [Copyright &y& Elsevier]

The accurate calculation of decimal fractions is still a challenge for the binary-coded computations that rely on von Neumann paradigm. Here, we report a kind of memristive abacus based on synaptic Ag-Ge-Se device, in which the memristive long-term potentiation and depression are caused by a chemically driven phase transformation. The growth and the rupture of conductive Ag₂Se dendrites are confirmed via in situ transmission electron microscopy. By detecting the change in memristive synaptic weight, the quantity of input signals applied onto the device can be "counted". This makes it possible to achieve the functions of abacus that is basically a counting frame. We demonstrate through experimental studies that this kind of memristive abacus can calculate decimal fractions in the light of the abacus algorithms. This approach opens up a new route to do decimal arithmetic in memristive devices without encoding binary-coded decimal.