44 results on '"Rzepa, G."'
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2. Understanding the ISPP Slope in Charge Trap Flash Memory and its Impact on 3-D NAND Scaling
3. Variability-Aware DTCO Flow: Projections to N3 FinFET and Nanosheet 6T SRAM
4. A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics
5. Modulation of the TGF-ß-induced epithelial-to-mesenchymal transition by pan-selective PDE inhibitors in A549 cells
6. Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies
7. Performance and Leakage Analysis of Si and Ge NWFETs Using a Combined Subband BTE and WKB Approach
8. Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures
9. The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release
10. Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs
11. From Gate Oxide Characterization to TCAD Predictions: Exploring Impact of Defects Across Technologies
12. Low Thermal Budget Dual-Dipole Gate Stacks Engineered for Sufficient BTI Reliability in Novel Integration Schemes
13. Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices
14. BTI Reliability Improvement Strategies in Low Thermal Budget Gate Stacks for 3D Sequential Integration
15. Border Trap Based Modeling of SiC Transistor Transfer Characteristics
16. Improved PBTI reliability in junction-less nFET fabricated at low thermal budget for 3D Sequential Integration
17. On the Impact of the Gate Metal Work-Function on the Charge Trapping Component of BTI
18. Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors
19. Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs (invited)
20. Benchmarking time-dependent variability of junctionless nanowire FETs
21. Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
22. Efficient physical defect model applied to PBTI in high-κ stacks
23. Accurate mapping of oxide traps in highly-stable black phosphorus FETs
24. Vertically stacked nanowire MOSFETs for sub-10nm nodes: Advanced topography, device, variability, and reliability simulations
25. Complete extraction of defect bands responsible for instabilities in n and pFinFETs
26. A systematic study of charge trapping in single-layer double-gated GFETs
27. The “permanent” component of NBTI revisited: Saturation, degradation-reversal, and annealing
28. Analog-circuit NBTI degradation and time-dependent NBTI variability: An efficient physics-based compact model
29. Nanoscale evidence for the superior reliability of SiGe high-k pMOSFETs
30. On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects
31. Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: From single defects to lifetimes
32. Charge feedback mechanisms at forward threshold voltage stress in GaN/AlGaN HEMTs
33. Expanding TCAD simulations from grid to cloud
34. Microscopic oxide defects causing BTI, RTN, and SILC on high-k FinFETs
35. The defect-centric perspective of device and circuit reliability — From individual defects to circuits
36. Characterization and modeling of reliability issues in nanoscale devices
37. On the microscopic structure of hole traps in pMOSFETs
38. Advanced modeling of charge trapping: RTN, 1/f noise, SILC, and BTI
39. Physical modeling of NBTI: From individual defects to devices
40. Characterization and modeling of charge trapping: From single defects to devices
41. Expanding TCAD simulations from grid to cloud.
42. Microscopic oxide defects causing BTI, RTN, and SILC on high-k FinFETs.
43. Physical modeling of NB TI: From individual defects to devices.
44. Speciation and Concentration of Trace Elements in the Ferruginous Sediments of Poland.
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