Author: "Takebe M" / Publication Type: Conference Materials - Searchworks@Jio Institute Digital Library Search Results

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Your search keyword '"Takebe M"' showing total 9 results

Start Over Author "Takebe M" Publication Type Conference Materials

9 results on '"Takebe M"'

1. GaAs-MISFETs with nm-Thin Gate Insulating Films Formed by Oxi-Nitridation Process

Author: Takebe, M., primary, Paul, N. C., additional, Nakamura, K., additional, Iiyama, K., additional, and Takamiya, S., additional
Published: 2003
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2. n-channel, p-channel, depletion, enhancement GaAs metal-insulator-semiconductor field effect transistors with gate films formed by oxi-nitridation of GaAs surfaces.

Author: Paul, N.C., Takebe, M., Tametou, M., Seto, H., Fujino, Y., Iiyama, K., and Takamiya, S.
Published: 2005
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3. Depletion/enhancement mode InAlAs/InGaAs-MOSHEMTs with nm-thin gate insulating layers formed by oxidation of the InAlAs layer.

Author: Nakamura, K., Paul, N.C., Takebe, M., Iiyama, K., and Takamiya, S.
Published: 2004
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4. Improved transconductance n-channel enhancement/inversion mode GaAs-MISFETs with gate insulating layers formed by dry oxi-nitridation.

Author: Tametou, M., Takebe, M., Nakamura, K., Paul, N.C., Iiyama, K., and Takamiya, S.
Published: 2004
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5. Improved transconductance N-channel enhancement/inversion mode GaAs-MISFETs with gate insulating layers formed by dry oxi-nitridation

Author: Tametou, M., primary, Takebe, M., additional, Nakamura, K., additional, Paul, N.C., additional, Iiyama, K., additional, and Takamiya, S., additional
Full Text: View/download PDF

6. Depletion/enhancement mode InAlAs/InGaAs- MOSHEMTs with nm - thin gate insulating layers formed by oxidation of the InAlAs layer

Author: Nakamura, K., primary, Paul, N.C., additional, Takebe, M., additional, liyama, K., additional, and Takamiya, S., additional
Full Text: View/download PDF

7. N-channel, p-channel, depletion, enhancement GaAs metal-insulator semiconductor field effect transistors with gate films formed by oxi-nitridation of GaAs surfaces

Author: Paul, N.C., primary, Takebe, M., additional, Tametou, M., additional, Seto, H., additional, Fujino, Y., additional, Iiyama, K., additional, and Takamiya, S., additional
Full Text: View/download PDF

8. Improved performance of mn-thin gate insulating layer formed by ex-situ dry oxi-nitridation process upon GaAs : GaAs-MISFET

Author: Takebe, M., primary, Paul, N.C., additional, Nakamura, K., additional, Tametou, M., additional, Iiyama, K., additional, and Takamiya, S., additional
Full Text: View/download PDF

9. Improved performance of mn-thin gate insulating layer formed by ex-situ dry oxi-nitridation process upon GaAs : GaAs-MISFET.

Author: Takebe, M., Paul, N.C., Nakamura, K., Tametou, M., Iiyama, K., and Takamiya, S.
Published: 2003
Full Text: View/download PDF

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