48 results on '"Waltl, M."'
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2. A Comprehensive Cryogenic CMOS Variability and Reliability Assessment using Transistor Arrays
3. Impact of Single Defects on NBTI and PBTI Recovery in SiO2 Transistors
4. The Importance of Secondary Generated Carriers in Modeling of Full Bias Space
5. Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors
6. Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS
7. CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States
8. Distribution of Step Heights of Electron and Hole Traps in SiON nMOS Transistors
9. Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures
10. The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release
11. Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures
12. First–Principles Parameter–Free Modeling of n– and p–FET Hot–Carrier Degradation
13. Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs
14. Statistical Characterization of BTI and RTN using Integrated pMOS Arrays
15. Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects
16. Annealing and Encapsulation of CVD-MoS2 FETs with 1010On/Off Current Ratio
17. Reliability of next-generation field-effect transistors with transition metal dichalcogenides
18. Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors
19. Reliability of black phosphorus field-effect transistors with respect to bias-temperature and hot-carrier stress
20. The impact of mixed negative bias temperature instability and hot carrier stress on single oxide defects
21. Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
22. Characterization and modeling of single defects in GaN/AlGaN fin-MIS-HEMTs
23. Efficient physical defect model applied to PBTI in high-κ stacks
24. Accurate mapping of oxide traps in highly-stable black phosphorus FETs
25. Complete extraction of defect bands responsible for instabilities in n and pFinFETs
26. A systematic study of charge trapping in single-layer double-gated GFETs
27. The “permanent” component of NBTI revisited: Saturation, degradation-reversal, and annealing
28. Reliability of single-layer MoS2 field-effect transistors with SiO2 and hBN gate insulators
29. Nanoscale evidence for the superior reliability of SiGe high-k pMOSFETs
30. Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: From single defects to lifetimes
31. Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors
32. Microscopic oxide defects causing BTI, RTN, and SILC on high-k FinFETs
33. On the volatility of oxide defects: Activation, deactivation, and transformation
34. Hot-carrier degradation in single-layer double-gated graphene field-effect transistors
35. Impact of hot carrier stress on the defect density and mobility in double-gated graphene field-effect transistors
36. On the microscopic structure of hole traps in pMOSFETs
37. Advanced modeling of charge trapping: RTN, 1/f noise, SILC, and BTI
38. A unified perspective of RTN and BTI
39. Evidence for defect pairs in SiON pMOSFETs
40. Characterization and modeling of charge trapping: From single defects to devices
41. Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI
42. Microscopic oxide defects causing BTI, RTN, and SILC on high-k FinFETs.
43. Reduction of the BTI time-dependent variability in nanoscaled MOSFETs by body bias
44. Advanced characterization of oxide traps: The dynamic time-dependent defect spectroscopy
45. Increasing the user experience of multimedia presentations with sensory effects.
46. Improving the Quality of multimedia Experience through sensory effects.
47. A test-bed for quality of multimedia experience evaluation of Sensory Effects.
48. The next dimension of video experience: Sensory effects.
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