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This paper presents a cycle by cycle Frequency Shift Keying (FSK) demodulator, able to demodulate a FSK signal with 1% frequency modulation index (MI), in a single cycle. Based on the proposed demodulation scheme, a high rate data transmission link can be established through a high-Q inductive coupling link, breaking the basic tradeoff between the power transfer efficiency (PTE) and data rate in single carrier wireless power and data transfer systems. Designed and simulated with $0.18\mu m$ CMOS process, the proposed FSK demodulator, detects successfully a 5Mbps data with a carrier frequency of 5MHz. A test chip is fabricated in 180nm CMOS technology. Measurement results shows that the demodulator is able to demodulate the cycle-by-cycle modulated FSK signals with low modulation index of 2.5%, with a BER of $1.24\times 10^{-5}$. [ABSTRACT FROM AUTHOR]

This paper presents a fully differential wake-up receiver (WuRX) with ultra-low power and high sensitivity. Implementing the fully differential framework achieves differential signal processing without an off-chip balun, which achieves noise suppression and sensitivity improvement. The low voltage baseband signal processing (LVBSP) is proposed to cut down the power consumption, which is achieved by the low-voltage fast-response differential amplifier (LFDA) and the time-domain signal processing circuit. Moreover, the periodic offset cancellation technique (POCT) in the baseband circuit is proposed to alleviate the offset and low-frequency noise impacts. This WuRX is implemented in the TSMC 65-nm CMOS process occupying an active area of 0.18 mm2. When operating at 434 MHz, the proposed WuRX has a −75-dBm sensitivity at 250 bps while consuming 6.4 nW from 0.4 V supply voltage. [ABSTRACT FROM AUTHOR]

Although spin orbit torque magnetic random access memory (SOT-MRAM) is one of the strong candidates for next-generation embedded memories, the degradation of read margin due to low tunnel magnetoresistance ratio (TMR) with process variations has been a large concern. In this paper, we present the dual-domain dynamic reference (DDDR) sensing scheme, where the reference voltage can be dynamically changed based on the combined voltage and time domain sensing to increase the sensing margin. The Half Schmitt trigger and sample & hold circuits are efficiently employed to generate data-dependent reference voltages and to store the sampled voltage levels at different times, respectively. According to the simulations using 28nm CMOS technology with 128 by 128 SOT-MRAM array, the proposed DDDR approach achieves a 243mV of sensing margin under 6.08E-8 bit-error-rate (BER) at 1.76ns, which is 2X larger margin with more than 100 times lower BER compared to the conventional read scheme. When scaling down the pre-charge voltage, the proposed scheme achieves more than 50% of the read energy savings under 1E-5 target BER condition. [ABSTRACT FROM AUTHOR]

In this paper, a single-channel two-step voltage-time hybrid domain analog-to-digital converter (ADC) is proposed. To achieve high sampling rate and high accuracy, 3.5-bit voltage domain MDAC and 7-bit high-speed time domain ADC (TD-ADC) are combined into a 10-bit hybrid ADC. In the first stage MDAC, a low-power push-pull amplifier is used to improve settling speed, and 1-bit redundancy is designed for calibration and dither injection. The TD-ADC with selective time domain quantization is implemented by a constant-current voltage to time converter (VTC) array and a direct positive feedback time domain comparator. The proposed VTC array can maintain high linearity with a large input swing in high-speed application. The prototype ADC was fabricated in a 28-nm CMOS process and occupied a core area of 0.074 mm2. Under a 0.95-V power supply, the chip achieves a measured peak SNDR of 53.2 dB and SFDR of 61.7 dB respectively at conversion rate up to 2.5 GS/s. The FOM is 48.2 fJ/conversion-step. [ABSTRACT FROM AUTHOR]

This paper presents the design of tunable CMOS pseudo-resistors aimed at achieving large and predictable resistance values. Instrumental to the proposed pseudo-resistor is the design of current sources of extremely low currents and transistors operating in subthreshold. The effects of the leakage currents of reverse-biased pn-junctions on the pseudo-resistor resistance are also evaluated. The proposed pseudo-resistor circuit was validated while in use as part of a filter integrated in a 180 nm CMOS process. Pseudo-resistors with resistances between 180 $\text{G}\Omega $ and 700 $\text{G}\Omega $ were employed to obtain low-frequency poles of a band-pass filter adjustable from 0.6 Hz to 2 Hz. [ABSTRACT FROM AUTHOR]

This paper presents a buffer-embedded noise-shaping SAR ADC, whose input buffer separates the capacitive DAC (CDAC) and the sampling capacitor (CS) at the input and output of the input buffer. This compensates for the non-linearity of the input buffer and reduces the CS value, resulting in a significant power saving in the input buffer. This buffer-embedded architecture enables the effective implementation of the following passive loop filter and enhances energy efficiency. A bootstrapping switch in the feedback CDAC is coupled to the output of the buffer, thereby avoiding a signal dependency due to the parasitic capacitance of the switch. The buffer-embedded noise-shaping SAR ADC occupies 0.08mm2 in a 65 nm CMOS process and features a parasitic input capacitor of 0.2 pF. It achieves 73.8 dB SNDR, 77 dB DR and 87.3 dB SFDR in a 2 MHz bandwidth without any calibration. Including the power consumption of the input buffer, the ADC consumes only 2.1 mW. [ABSTRACT FROM AUTHOR]

The reduction of the nominal supply voltage of CMOS technologies with scaling comes with the decrease of the maximum tolerable voltage of the devices. This poses challenges in implementing circuit blocks that are compliant with standardized communication protocols or deal with off-chip signals in voltage domains larger than the nominal supply (e.g., 1.8 V, 3.3 V, 5 V). Design techniques such as cascoding, voltage shifting and adaptive biasing are effective at removing the need for customized voltage resistant input/output (I/O) devices since they prevent intolerable voltage drops. However, at the input of multiple-channel blocks, the design of switches of multiplexers results critical as the input and the output nodes can assume values beyond the signal range, causing harmful biasing configurations. This paper presents the architecture of a switch for input channel multiplexers able to handle signals up to twice the nominal supply voltage of the employed devices. Its effectiveness has been proved by implementing a 1.6V switch with the core MOS transistors of the 28nm CMOS technology with 0.96V nominal supply voltage. The comparison with a benchmark switch based on 1.8V I/O devices showed that both a larger area (slightly more than twice) and static current consumption ($40\mu \text{A}$) are required. [ABSTRACT FROM AUTHOR]

A charge amplifier incorporates digital circuits as an alternative to the classic analog amplifier to achieve a high open-loop gain to maintain a consistent closed-loop gain over input capacitance variations. The digital-assisted charge amplifier employs a comparator, digital control logic, differential charge pump, current sources, common-mode feedback, and clock generator. A detailed analysis studies the amplifier stability and trade-off between ripple voltage and settling speed. A novel two-step reset scheme and tri-state charge pump minimize the output offset due to ripple residues. Fabricated in a 180-nm CMOS process, the digital-assisted amplifier achieves an open-loop gain of 101 dB, closed-loop gain of $15.0~\mu \text{V}$ /e-, input-referred noise of 221 $\text{e}^{-}$ rms, and output swing of 3 V while consuming 2.19 mW. The amplifier also demonstrates the ability to amplify a dynamic input current using a custom opto-electronic test setup. The amplifier maintains a consistent closed-loop gain across parasitic input capacitance from 6 pF to 94 pF. [ABSTRACT FROM AUTHOR]

A CMOS Hall-based fully integrated isolation amplifier for differential voltage sensing is presented in this work. The design is fabricated in a $0.35 \mu \text{m}$ CMOS process in which the high voltage (HV) side of the amplifier contains a coil driver while the low voltage (LV) side includes a Hall-effect sensor, low-noise amplifier, programmable-gain amplifier, filter, and chopper switches. Another Hall sensor performs the digital isolation using the on-off keying (OOK) technique for clock recovery. The introduced prototype achieves above 120 dB of isolation mode rejection (IMR) at 60 Hz and operates at a continuous isolation working voltage of 0.6 kV. It has also a maximum nonlinearity of 0.64 %, an input-referred offset of 1 mV, a 40 dB full-scale signal-to-noise ratio over a 40 kHz bandwidth, and a spurious-free dynamic range of 64 dB. The silicon area for each of the two separate dices employed for the HV and LV side of the isolation amplifier is 1 mm2 with a power consumption of 7.6 mW and 9.9 mW respectively. The achieved miniaturized size of the isolation components, as well as their significantly low-power consumption, ensure the suitability of the proposed isolation amplifier for multi-channel readout circuit applications. [ABSTRACT FROM AUTHOR]