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In this paper, the adaptive fuzzy control of switched stochastic nonlinear systems with set-time prescribed performance based on event-driven mechanism is studied. The creative part of this paper is that based on the set-time performance function, a modified event-triggered strategy that considers asynchronous switching to deteriorate system performance without strict assumptions is presented, which avoids Zeno behavior and saves communication resources. Then, by using backstepping recursive design technique, It $\hat {o}$ ’s differential lemma and mode-dependent average dwell time (MDADT) method, a novel adaptive performance control scheme is proposed, which can ensure that all the variables in the system are semiglobally uniformly ultimately bounded (SGUUB) in probability and the tracking error gets into prescribed boundary no later than an arbitrarily adjusted setting time. Finally, the proposed algorithm is applied to a RLC circuit and its practicability is verified via simulation results. [ABSTRACT FROM AUTHOR]

This paper investigates the formation control problem for linear multi-agent systems under switching directed topologies. Based on absolute or relative outputs, we propose two distributed observer-based event-triggered control schemes. Both schemes can guarantee the boundedness of formation errors under sufficient conditions. The schemes can also avoid Zeno behaviors by giving an estimation for the lower bound of sampling intervals. Finally, simulations and experiments validate the proposed approaches. [ABSTRACT FROM AUTHOR]

This paper presents a sliding mode dynamic output feedback controller design for Markovian jump systems under a communication network. For the inaccessible states and uncertain parts of Markovian jump systems, a novel integral-type sliding mode output feedback controller combined with system states and dynamic controller states is proposed. An event-triggered mechanism is introduced to reduce network bandwidth and resources requirements. The augmented dynamic system and complete control framework are presented together. The reachability of the novel integral-type sliding mode is proved. Then, based on delay-dependent Lyapunov functions, free-weighting matrices, and a singular value decomposition approach, a less conservative sufficient condition is proposed to ensure exponential stability with a weighted $\mathcal {L}_{2}$ - $\mathcal{ L}_{\infty}$ disturbance performance. Finally, a numerical and a DC-DC switched boost converter circuit simulations that verify the feasibility and effectiveness of the proposed controller are presented. [ABSTRACT FROM AUTHOR]

Energy harvesting techniques provide solutions for powering battery-free circuits or even for charging storage elements such as batteries or super capacitors. In this paper a self-starting switched-capacitor approach based on three-stage charge pump that is appropriate to thermoelectric and photo-voltaic energy harvesting, is carried out in a 28 nm ultra-thin buried oxide (UTBB) fully-depleted silicon-on-insulator (FD-SOI) CMOS technology. By taking advantage of the FD-SOI substrate characteristics, the forward-body-biasing (FBB) technique is applied in order to improve switch conductances. In addition, a sizing exploration of standard N-type and flipped-well P-type devices operating as switches is advanced, in order to provide optimum balance between their conductances. Extensive simulation results validate the proper operation of the charge pump at a minimum input voltage of 150 mV, and show a maximum efficiency peak of 63.3% at an input voltage of 350 mV and load a current of 500 nA. [ABSTRACT FROM AUTHOR]

The reduction of the nominal supply voltage of CMOS technologies with scaling comes with the decrease of the maximum tolerable voltage of the devices. This poses challenges in implementing circuit blocks that are compliant with standardized communication protocols or deal with off-chip signals in voltage domains larger than the nominal supply (e.g., 1.8 V, 3.3 V, 5 V). Design techniques such as cascoding, voltage shifting and adaptive biasing are effective at removing the need for customized voltage resistant input/output (I/O) devices since they prevent intolerable voltage drops. However, at the input of multiple-channel blocks, the design of switches of multiplexers results critical as the input and the output nodes can assume values beyond the signal range, causing harmful biasing configurations. This paper presents the architecture of a switch for input channel multiplexers able to handle signals up to twice the nominal supply voltage of the employed devices. Its effectiveness has been proved by implementing a 1.6V switch with the core MOS transistors of the 28nm CMOS technology with 0.96V nominal supply voltage. The comparison with a benchmark switch based on 1.8V I/O devices showed that both a larger area (slightly more than twice) and static current consumption ($40\mu \text{A}$) are required. [ABSTRACT FROM AUTHOR]

The millimeter-wave (mm-wave) single-pole double-throw (SPDT) switch designed in bulk CMOS technology has limited power-handling capability in terms of 1-dB compression point (P1dB) inherently. This is mainly due to the low threshold voltage of the switching transistors used for shunt-connected configuration. To solve this issue, an innovative approach is presented in this work, which utilizes a unique passive ring structure. It allows a relatively strong RF signal passing through the TX branch, while the switching transistors are turned on. Thus, the fundamental limitation for P1dB due to reduced threshold voltage is overcome. To prove the presented approach is feasible in practice, a 90-GHz asymmetrical SPDT switch is designed in a standard 55-nm bulk CMOS technology. The design has achieved an insertion loss of 3.2 dB and 3.6 dB in TX and RX mode, respectively. Moreover, more than 20 dB isolation is obtained in both modes. Because of using the proposed passive ring structure, a remarkable P1dB is achieved. No gain compression is observed at all, while a 19.5 dBm input power is injected into the TX branch of the designed SPDT switch. The die area of this design is only 0.26 mm2. [ABSTRACT FROM AUTHOR]